Impedance spectroscopy studies of poly (methyl methacrylate)-lithium salts polymer electrolyte systems

In the present work, five systems of samples have been prepared by the solution casting technique. These are the plasticized poly(methyl methacrylate) (PMMA-EC) system, the LiCF₃SO₃ salted-poly(methyl methacrylate) (PMMA-LiCF₃SO₃) system, the LiBF₄ salted-poly(methyl methacrylate) (PMMA-LiBF₄) system, the LiCF₃SO₃ salted-poly(methyl methacrylate) containing a fixed amount of plasticizer ([PMMA-EC]-LiCF₃SO₃) system, and the LiBF₄ salted-poly(methyl methacrylate) containing a fixed amount of plasticizer ([PMMA-EC]-LiBF₄) system. The conductivities of the films from each system are characterized by impedance spectroscopy. The room temperature conductivity in the pure PMMA sample and (PMMA-EC) system is 8.57 × 10⁻¹³ and 2.71 × 10⁻¹¹ S cm⁻¹, respectively. The room conductivity for the highest conducting sample in the (PMMA-LiCF₃SO₃), (PMMA-LiBF₄), ([PMMA-EC]-LiCF₃SO₃), and ([PMMA-EC]-LiBF₄) systems is 3.97 × 10⁻⁶, 3.66 × 10⁻⁷, 3.40 × 10⁻⁵, and 4.07 × 10⁻⁷ S cm⁻¹, respectively. The increase in conductivity is due to the increase in number of mobile ions, and decrease in conductivity is attributed to ion association. The increase and decrease in the number of ions can be implied from the dielectric constant, ɛ_r-frequency plots. The conductivity–temperature studies are carried out in the temperature range between 303 and 373 K. The results show that the conductivity is increased when the temperature is increased and obeys Arrhenius rule. The plots of loss tangent against temperature at a fixed frequency have showed a peak at 333 K for the ([PMMA-EC]-LiBF₄) system and a peak at 363 K for the ([PMM-EC]-LiCF₃SO₃) system. This peak could be attributed to β-relaxation, as the measurements were not carried out up to glass transition temperature, T _g. It may be inferred that the plasticizer EC has dissociated more LiCF₃SO₃ than LiBF₄ and shifted the loss tangent peak to a higher temperature. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

In situ FTIR study of oxygen adsorption on nanostructured RuO2 thin-film electrode

In situ Fourier transform spectroscopy (FTIR) was used to study interactions of nanostructured ruthenium oxide (RuO₂) thin-film sensing electrode with O₂ at room temperature. RuO₂ nanostructures were pretreated at 1,000 °C for 1 h in order to obtain good crystallinity of amorphous RuO₂ nanoparticles. Morphology and properties of nanostructured RuO₂ were characterized by X-ray diffraction, thermo-gravimetric/differential thermal analysis, scanning electron microscopy, and FTIR. It was shown that pretreated RuO₂ is quite active for O₂ ⁻, O₂ ²⁻, and O²⁻ adsorption with clear 722 cm⁻¹ band for superoxide ions (O₂ ⁻) adsorption for the different oxygen concentrations. The results of in situ FTIR measurements revealed that the active sites for oxygen adsorption are not limited to the triple boundaries, but extended to surfaces of RuO₂ electrodes. Fundamental vibration frequencies of ruthenium–oxygen bond at a temperature of 23 °C as well as region above fundamental frequencies for the nanostructured RuO₂ were identified.     

Four quasi-particle level at 2256 keV in182Re

In-beam nuclear spectroscopic studies of¹⁸²Re, following the reaction¹⁸¹Ta(α, 3n)¹⁸²Re have been made using gamma-ray and internal conversion electron techniques.K-conversion coefficients for several transitions have been measured and the multi-polarities of the various transitions assigned. In particular, the spin and parity of the four-quasi-particle isomeric level at 2256 keV were determined to be 16⁻. Theg-factor of this level has been measured to beg = 0·32 ± 0·05. On the basis of theg-factor and the decay pattern of this level, a configuration {v9/2⁺ [624↑]v7/2⁻ [514↓]v7/2⁻ [503↑]π9/2⁻ [514↑]} _k ^x = 16⁻ has been assigned to this level. The nature of the retardation of the gamma transitions deexciting this level is discussed. It is argued that the measured retardation factors can be explained if the nucleus has a triaxial shape.     

Studies of structure, thermal, and electrical properties for Cs 5 H 3 (SO 4 ) 4 crystal

Electrical conductivity, differential scanning calorimetry, and X-ray diffraction measurements were performed on a pentacesium trihydrogen tetrasulfate, Cs₅H₃(SO₄)₄, crystal. The transition entropy at a superionic phase transition and the activation energy of proton migrations in the superionic phase were determined to be 58.2 J K⁻¹ mol⁻¹ and 0.48 eV, respectively. The crystal structure of Cs₅H₃(SO₄)₄ at room temperature was refined. The electrical conduction in Cs₅H₃(SO₄)₄ was discussed with the refined structure.     

Metal-insulator transition in electron-doped Ba1−x La x MnO3 compounds

Electron-doped (Ba_1−x La _x )MnO₃ compounds were prepared for x=0−0.5. Measurements of X-ray diffraction (XRD) at room temperature and temperature variation of dc electrical resistivity down to 20 K were carried out. Samples with x=0.2–0.5 exhibit metal-insulator (M-I) transition. The maximum M-I transition temperature (T _c) of 289 K was observed for 30% of La doping (x=0.3). XRD patterns of these samples (x=0.2−0.5) were analyzed using Rietveld refinement. These samples are found to be mostly in single-phase form with orthorhombic symmetry (space group Pbnm). We have found strong correlation between Mn-O-Mn bond angles and T _c of M-I transition. The resistivity data below T _c could be fitted to the expression ρ=ρ ₁+ρ ₂ T ² and this shows that double exchange interaction plays a major role even in Mn⁴⁺-rich compound. Above T _c the resistivity data were fitted to variable range hopping and small polaron models.     

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent dark current–voltage (I–V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room temperature. The current–voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine (VOPc) was extracted from the I–V characteristics in the SCLC region and was found approximately 15.5 × 10⁻³ cm² V⁻¹ s⁻¹. The effective barrier height, Ф_B, was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions and at temperatures ranging from 300 to 363 K.     

D.C. conductivity of transparent conductive ZnO:Al films in the temperature range 80–360 K

An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range from 80–360 K on nanocrystalline ZnO:Al films (Al³⁺ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave R_H=0.53 cm³C⁻¹, from which a carrier concentration of n=1.18×10¹⁹ cm⁻³ and a carrier mobility of μ=1.40 cm²/Vs were deduced. Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14–18, 2004.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

The infrared and laser Raman spectra of K2Zn(SO4)2 · 6H2O

The Raman spectra of the single crystal of K₂Zn(SO₄)₂·6H₂O belonging toC _2h ⁵ space group in the 40–1200 cm⁻¹ region in different scattering geometries and their spectra ofthe microcrystalline salt in the 1500-50 cm⁻¹ region have been reported. The dynamics of the crystal has been described in terms of 186 phonon modes under the unit cell approximation. The weak bands in the region 400–900 cm⁻¹ have been assigned to the libratory modes of H₂O molecules in contradiction to the assignments reported by Ananthanarayanan. The ambiguities existing in the literature about the assignments ofν ₂ ^c andν ₅ ^c modes of [Zn(H₂O)₆]²⁺ have also been removed. The translatory and libratory modes of different units of the crystal have been identified and assignments are made using farir and Raman data on various isomorphous tutton salts. It has been inferred that both SO ₄ ²⁻ tetrahedron and [Zn(H₂O)₆]²⁺ octahedron undergo linear as well as angular distortions from their free state symmetries in the crystal.     

Structure and electrical properties of HfO<Subscript>2</Subscript> high-<Emphasis Type="Italic">k</Emphasis> films prepared by pulsed laser deposition on Si (100)

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N₂ atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10⁻⁸ A/cm² at the applied voltage of −1.5 V.     

Transport properties of hexanoyl chitosan-based gel electrolyte

Films of hexanoyl chitosan-based polymer electrolyte were prepared by the technique of solution casting. The effect of plasticizer on the transport properties of hexanoyl chitosan:lithium trifluoromethanesulfonate (LiCF₃SO₃) electrolytes have been investigated. The plasticizer used was ethylene carbonate (EC). The highest room temperature conductivity achieved in the EC-plasticized hexanoyl chitosan-based electrolytes is 2.75×10⁻⁵ S cm⁻¹. The Rice and Roth model was used to explain the variations in the dc conductivity observed. The exponent, s, in Jonscher’s universal power law equation σ(ω)=σ _dc+Aω ^s , was analyzed as a function of temperature for the sample containing 30 wt% of EC. The analysis suggests that the conduction mechanism follows that proposed by the overlapping large polaron tunneling model.     

Theoretical study of NO<Stack><Subscript>3</Subscript><Superscript>−</Superscript></Stack> interacting with carbon nanotube

This paper deals with quantum mechanical interaction of no ₃⁻ with (5,5) and (8,0) swcnts. To perform this we have made an ab initio calculation based on the density functional theory. In these framework the electronic density plays a central role and it was obtained of a self-consistent field form. It was observed through binding energy that NO₃⁻ molecule interacts with each nanotube in a physisorption regime. We propose these swcnts as a potential filter device due to reasonable interaction with NO₃⁻ molecule. Besides this type of filter could be reusable, therefore after the filtering, the swcnts could be separated from NO₃⁻ molecule.      

Structural and electrical characterisation of strontium zirconate proton conductor co-sputter deposited coatings

SrZr_1−x Y _x O₃ coatings were co-sputtered from metallic Zr–Y (84–16 at.%) and Sr targets in the presence of a reactive argon–oxygen gas mixture. The structural and chemical features of the film have been assessed by X-ray diffraction and scanning electron microscopy. The electrical properties have been investigated for different substrates by Complex Impedance Spectroscopy as a function of crystalline state, temperature and atmosphere. The as-deposited coatings are amorphous and crystallise after annealing at 673 K for 2 h under air. The stabilisation of the perovskite structure is a function of the nominal composition. The films are dense and present a good adhesion on different substrates. Crystallisation and mechanical stresses are detected by alternating current (AC) impedance spectroscopy. Significant ionic conductivity in the 473–823 K temperature range is evidenced in air. Two different conduction regimes in the presence of steam are attributed to a modification of the charge carrier nature. In spite of low conductivity values (σ ~10⁻⁶ S.cm⁻¹ at 881 K), the activation energies are in agreement with that of Y-doped strontium zirconate ceramics (~0.7 eV in air).     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

A Molecular Thermometer Based on the Delayed Fluorescence of C70 Dispersed in a Polystyrene Film

A new optical molecular thermometer, based on the thermally activated delayed fluorescence of C₇₀ dispersed in a polystyrene film, was developed. In the presence of oxygen, the fluorescence intensity of the C₇₀ film is essentially temperature independent in a wide range. In the absence of oxygen, however, the fluorescence intensity markedly increases with temperature. At room temperature (25°C), and after degassing the sample, the fluorescence intensity of C₇₀ increases 22 times, while at 100°C the fluorescence intensity is increased by 70 times. With our system, the very weak fluorescence of C₇₀ (Φ_F ≅ 5 × 10⁻⁴, in toluene) can be increased up to 91 times (up to an estimated maximum value Φ_F = 0.046). The estimate value of the singlet-triplet gap (29 kJ mol⁻¹) and the fluorescence lifetime (0.63 ns) of the C₇₀ in film are in agreement with the values reported in the literature for C₇₀ in solution. The values of the phosphorescence lifetime at room temperature (23 ms) and the quantum yield of triplet formation (0.989) were also determined. The system is completely reversible with respect to heating-cooling cycles.     

Transport studies on filler-doped chitosan based polymer electrolyte

The room temperature conductivity of the chitosan complex containing 40 wt.% of salt increased from 6.02×10⁻⁶ Scm⁻¹ to 2.10×10⁻⁵ Scm⁻¹ after the addition of 1.0 wt.% aluminosilicate. Conductivity of the electrolyte is contributed from the charge carrier density and ionic mobility. The Rice and Roth model was applied in calculating the mobility, μ and density of ions, n. The number density of ions, n, increases with temperature, while mobility, μ decreases with increasing temperature. This work also suggests that the filler did not change the conduction mechanism of the charge carrier in chitosan-salt-filler complexes but helped to increase the conductivity value of the materials. Paper presented at the International Conference on Functional Materials and Devices 2005, Kuala Lumpur, Malaysia, June 6 – 8, 2005.     

AC Conductivity,XRD and transport properties of melt quenched PbI<Subscript>2</Subscript>–Ag<Subscript>2</Subscript>O–Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> system

Composite materials used for electrode and electrolyte materials have been intensely studied in view of their advantages such as higher conductivity and better operational performance compared to their single-phase counterparts. The present work aims at studying the electrical and structural characteristics of a new composite electrolyte namely, (PbI₂) _x  − (Ag₂O–Cr₂O₃)_100−x where x = 5, 10, 15, 20, and 25 mol%, respectively, prepared by the melt quenching technique. The room temperature X-ray diffraction spectra revealed certain crystalline phases in the samples. AC conductivity analysis for all the prepared samples was carried out over the frequency range 1 MHz–20 Hz and in the temperature window 297–468 K. The room temperature conductivity values were calculated to be in the order of 10⁻⁵–10⁻³ Scm⁻¹. An Arrhenius dependence of temperature with conductivity was observed, and the activation energies calculated were found to be in the range 0.27–0.31 eV. Furthermore, the total ionic transport number (t _i) values obtained for all these indicated the ionic nature of this system. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

Electric-field dependence of dielectric properties of sol-gel derived Ba(Zr0.2Ti0.8)O3 ceramics

The effect of a dc bias field on the diffuse phase transition and nonlinear dielectric properties of sol-gel derived Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are investigated. Diffuse phase transitions were observed in BZT ceramics and the Curie–Weiss exponent (CWE) was γ∼2.0. The dielectric constant versus temperature characteristics and the γ in the modified Curie–Weiss law, ε ⁻¹=ε _m ⁻¹[1+(T−T _m ) ^γ /C₁](1≤γ≤2), as a function of the dc bias field was obtained for BZT ceramics. The results indicated that γ is a function of dc bias field, and the γ value decreased from 2.04 to 1.73 with dc bias field increasing from 0 to 20 kV/cm. The dielectric constant decreases with increasing dc bias field, indicating a field-induced phase transition. The dc bias field has a strong effect on the position of the dielectric peak and affects the magnitude of the dielectric properties over a rather wide temperature range. The peak temperature of the dielectric loss does not coincide with the dielectric peak and an obvious minimum value for the dielectric loss at the temperature of the dielectric peaks is observed. At room temperature, 300 K, the high tunability (K=80%), the low loss tangent (≈0.01) and the large FOM (74), clearly imply that these ceramics are promising materials for tunable capacitor-device applications.     

Structure and electrical properties of p-type twin ZnTe nanowires

Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility (μ _h ) of 0.11 cm² V⁻¹ S⁻¹, and a carrier concentration (n _h ) of 1.1×10¹⁷ cm⁻³. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.     

Charge/discharge characteristics of sulfur composite electrode at different temperature and current density in rechargeable lithium batteries

The charge/discharge characteristics of the sulfur composite cathodes were investigated at different temperatures and different current densities. The composite presented the discharge capacities of 854 and 632 mAh g⁻¹ at 60 and −20 °C, respectively, while it had the discharge capacities of 792 mAh g⁻¹ at 25 °C. The composite presented the discharge capacities of 792 and 604 mAh g⁻¹ at 55.6 and 667 mA g⁻¹, respectively, at room temperature. The results showed that the sulfur composite cathodes presented good charge/discharge characteristics between 60 and −20 °C and at a high c-rate up to 667 mA g⁻¹.