Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions |
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Authors: | Shahid M Khan Muhammad H Sayyad Khasan S Karimov |
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Institution: | (1) GIK Institute of Engineering Sciences and Technology, Topi, District Swabi, 23640, Pakistan;(2) Physical Technical Institute of Academy of Sciences, Rudaki Ave., 33, Dushanbe, 734025, Tajikistan |
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Abstract: | An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent
dark current–voltage (I–V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room
temperature. The current–voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited
current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series
and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine
(VOPc) was extracted from the I–V characteristics in the SCLC region and was found approximately 15.5 × 10−3 cm2 V−1 s−1. The effective barrier height, ФB, was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions
and at temperatures ranging from 300 to 363 K. |
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