The tuning of crystallization behavior of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene)

Poly (vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has three crystal forms, including paraelectric α, ferroelectric β, and γ phases. In previous studies, the properties and performances of P(VDF-TrFE) have been the focus of research. However, the formation mechanism and regulation mode of various crystal forms remain unclear. Therefore, it is an important topic for further research to elucidate, summarize, and prospect the polymorphism of P(VDF-TrFE) and regulate the crystal forms. This review systematically summarizes the crystalline structure and phase transition between ferroelectric and paraelectric phase of P(VDF-TrFE) crystals; discusses the influence of annealing, blending and electric field on the crystallinity, selection of polymorphic crystals, and phase transition behavior between them; reviews the effects of annealing, melt-recrystallization, substrate and nanoconfinement on the crystal orientation. Finally, the effects of the crystal structure of P(VDF-TrFE) on its properties are briefly summarized.     

钙钛矿铁电纳米片诱导的P (VDF-TrFE)取向生长

Ferroelectric polymers are particularly attractive for applications in flexible electronic devices, and controlling its crystalline phase growth is crucial for obtaining optimized ferroelectric properties. Herein we report that a very low introduction (0.2% (w)) of single-domain ferroelectric PbTiO₃ nanoplates can effectively mediate the nucleation and subsequent growth of a crystalline phase within P (VDF-TrFE) (denoted by PVTF), forming highly oriented films and significantly improving the ferroelectric properties due to an alignment of the polarization directions of the polymer and the nanoplates.     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

Dependence of dielectric,ferroelectric, and piezoelectric properties on crystalline properties of p(VDF‐co‐TrFE) copolymers

Thermal processing at various temperatures has been used to fabricate poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐co‐TrFE)] films with varied crystalline properties in an attempt to improve their piezoelectric properties. Although the dielectric constant of the films annealed at higher temperature is smaller than that of cooled and quenched ones, it has been shown that the annealed films possess larger crystallinity and stacked lamellar crystal grain size. The ferroelectric domains deriving from crystal region in all the samples are effectively improved by hot polarization. As a result, the remnant polarizations (P_r) and coercive electric field (E_c) of the corresponding films are improved at a low frequency due to the response of dipoles in crystal phase, and the largest piezoelectric constant in the longitudinal thickness mode (d₃₃=?25 pC/N) is obtained in an annealed copolymer film. The results illustrate improving the crystal structure of P(VDF‐co‐TrFE) is an effective way to realize high electromechanical properties, which provides broadly applied scenery for this kind of copolymer in piezoelectric components. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Heterogeneous freezing on pyroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin films

Active deicing of technical surfaces, such as for wind turbines and heat exchangers, currently requires the usage of heat or chemicals. Passive coating strategies that postpone the freezing of covering water would be beneficial in order to save costs and energy. One hypothesis is that pyroelectric active materials can achieve this because of the surface charges generated on these materials when they are subject to a temperature change. High-quality poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin films with a high crystallinity, prefererd edge-on orientation, low surface roughness, and comprised of the β-analogous ferroelectric phase were deposited by spin-coating. Freezing experiments with a cooling rate of 1 K min⁻¹ were made on P(VDF-TrFE) coatings in order to separate the effect of different parameters such as the poling direction, film thickness, used solvent, deposition process, underlying substrate, and annealing temperature on the achievable supercooling. The topography and the underlying substrate significantly changed the distribution of freezing temperatures of water droplets in contact with these thin films. In contrast, no significant effect of the thickness, morphology, or pyroelectric effect of the as-prepared domain-state on the freezing temperatures was found.     

Discrete Molecular Copper(II) Complex for Efficient Piezoelectric Energy Harvesting Above Room-Temperature

Developing robust, wearable, and biocompatible energy harvesting devices with bulk oxides (ceramics and perovskites) is extremely hard to achieve due to their zero mechanical flexibility, heavy metal toxicity, and tunability of properties. Alternatively, discrete inorganic complexes can be an excellent choice to overcome the above-stated issues, thanks to appropriate molecular engineering. Herein, we report an above-room-temperature ferroelectric discrete molecular complex [Cu(L-phe)(bpy)(H₂O)]PF₆⋅H₂O ( 1 ) which is suitable for piezoelectric energy harvesting due to its large values of piezoelectric co-efficient (d₃₃=10 pm V⁻¹) and spontaneous polarization (P_s=1.3 μC cm⁻²). Among the devices prepared with the composite films of polyvinyl alcohol (PVA) and various weight % composition of 1 , the 10 Wt % composite shows the highest output voltage of 8 V, a power density of 0.85 μW cm⁻², and output current of 5 μA, which is highest for any discrete inorganic complex reported to date.     

Piezoelectric Energy Harvesting from a Ferroelectric Hybrid Salt [Ph3MeP]4[Ni(NCS)6] Embedded in a Polymer Matrix

Organic–inorganic hybrid ferroelectrics are an exciting class of molecular materials with promising applications in the area of energy and electronics. The synthesis, ferroelectric and piezoelectric energy harvesting behavior of a 3d metal ion‐containing A₄BX₆ type organic–inorganic hybrid salt [Ph₃MeP]₄[Ni(NCS)₆] ( 1 ) is now presented. P‐E hysteresis loop studies on 1 show a remnant ferroelectric polarization value of 18.71 μC cm^?2, at room temperature. Composite thermoplastic polyurethane (TPU) devices with 5, 10, 15 and 20 wt % compositions of 1 were prepared and employed for piezoelectric energy harvesting studies. A maximum output voltage of 19.29 V and a calculated power density value of 2.51 mW cm^?3 were observed for the 15 wt % 1 ‐TPU device. The capacitor charging experiments on the 15 wt % 1 ‐TPU composite device shows an excellent energy storage performance with the highest stored energies and measured charges of 198.8 μJ and 600 μC, respectively.     

Comparative Solution Synthesis of Mn Doped (Na,K)NbO3 Thin Films

(K_0.5Na_0.5)NbO₃ (KNN) is a promising lead-free alternative for ferroelectric thin films such as Pb(Zr,Ti)O₃. One main drawback is its high leakage current density at high electric fields, which has been previously linked to alkali non-stoichiometry. This paper compares three acetate-based chemical solution synthesis and deposition methods for 0.5 mol % Mn-doped KNN film fabrication, using lower crystallization temperature processes in comparison to the sintering temperatures necessary for fabrication of KNN ceramics. This paper shows the crucial role of the A site homogenization step during solution synthesis in preserving alkali chemical homogeneity of Mn doped KNN films. Chemically homogeneous films show a uniform grain size of 80 nm and a leakage current density under 2.8×10⁻⁸ A cm⁻² up to electric fields as high as 600 kV cm⁻¹, which is the highest breakdown strength reported for KNN thin films. Solution synthesis involving two-step pyrolysis resulted in films with dense, columnar microstructures, which are interesting for orientation control and enhancement of piezoelectric properties. This study reports detailed solution synthesis and deposition processes with good dielectric, ferroelectric and breakdown field properties. An optimized fabrication method that should couple low leakage current density with dense and oriented microstructures is proposed.     

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

PMN-PT thin films grown by sputtering on silicon substrate: influence of the annealing temperature on the physico-chemical and electrical properties of the films

Studies of piezoelectric and electrostrictive properties of (1?x)PMN-xPT thin films were carried out. We have chosen the compositions 90/10 and 70/30, which exhibit, respectively, mostly electrostrictive and piezoelectric behaviour in bulk material. Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. We demonstrate that with conventional annealing the pure perovskite phase can be obtained at very low temperature (400°C) without any pyrochlore phase for the two compositions. We show that electromechanical response is a mix between electrostrictive and piezoelectric response for the two compositions. However, as can be easily understood, piezoelectric contribution is larger for 70/30. It is shown that electrical responses of the films obtained at 400°C are largely satisfied for many applications; for higher annealing temperature we observe an enhance of the electrical properties due to an improvement of the material quality in terms of crystalline structure.     

A Ferroelectric Aminophosphonium Cyanoferrate with a Large Electrostrictive Coefficient as a Piezoelectric Nanogenerator

Hybrid materials possessing piezo- and ferroelectric properties emerge as excellent alternatives to conventional piezoceramics due to their merits of facile synthesis, lightweight nature, ease of fabrication and mechanical flexibility. Inspired by the structural stability of aminophosphonium compounds, here we report the first A₃BX₆ type cyanometallate [Ph₂(ⁱPrNH)₂P]₃[Fe(CN)₆] ( 1 ), which shows a ferroelectric saturation polarization (P_s) of 3.71 μC cm⁻². Compound 1 exhibits a high electrostrictive coefficient (Q₃₃) of 0.73 m⁴ C⁻², far exceeding those of piezoceramics (0.034–0.096 m⁴ C⁻²). Piezoresponse force microscopy (PFM) analysis demonstrates the polarization switching and domain structure of 1 further confirming its ferroelectric nature. Furthermore, thermoplastic polyurethane (TPU) polymer composite films of 1 were prepared and employed as piezoelectric nanogenerators. Notably, the 15 wt % 1 -TPU device gave a maximum output voltage of 13.57 V and a power density of 6.03 μW cm⁻².     

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

A novel silicon-based PbTiO₃/Pb(Zr,Ti)O₃/PbTiO₃ (PT/PZT/PT) sandwich structure has been prepared using a sol-gel method. The annealing temperature is greatly reduced compared with those structures without PT layers. Capacitance-voltage (C-V), leakage current-voltage (I-V), polarization-field (P-E), dielectric-frequency response and polarization fatigue of the sandwich structure are examined. The relative dielectric constant, the coercive field and the remanent polarization of the PZT films are measured to be about 900, 18 kV/cm and 16 C/cm² respectively. The current density is less than 5 × 10^–9 A/cm² below 200 kV/cm. The dielectric constant of the structure remains constant at low frequency, and decreases to some degree at high frequency. The retained polarization does not change significantly after 8 × 10⁹ read/write cycles. The PZT films are proved to have very good dielectric and ferroelectric properties. The new PT/PZT/PT sandwich structure can be valuable for memory devices and other applications.     

Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 thin films prepared by modified sol–gel process

80%Pb(Zn_1/3Nb_2/3)O₃–20%PbTiO₃ (PZN–PT) thin films have been prepared on Pt/Ti/SiO₂/Si substrates using a modified sol–gel method. In our method, niobium pentaoxide is used as a substitution instead of niobium ethoxide which is moisture-sensitivity and much more expensive. Microstructure and electrical properties of PZN–PT thin films have been investigated. X-ray diffraction analysis shows that proper annealing temperature of PZN–PT thin films is 600 °C. The PZN–PT thin films annealed at 600 °C are polycrystalline with (111)-preferential orientations. Field-emissiom scanning electron microscope analysis revealed PZN–PT thin films possess well-defined and crack-free microstructure. The thickness of thin films is 290 nm. The Pt/PZN–PT/Pt capacitors have been fabricated and it presents ferroelectric nature. The remanent polarization (Pr), spontaneous polarization (Ps), and the coercive electric field (Ec) are 8.71 μC/cm², 43.06 μC/cm², and 109 kV/cm at 1 MHz, respectively. The dielectric constant (ε_r) and the dissipation factor (tan δ) are about 500.3 and 0.1 at 1 kHz, respectively.     

Miscibility and ferroelectric behavior in blends of poly(vinylidene fluoride/trifluoroethylene) and poly(vinyl acetate)

The blend system containing a poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)] copolymer (68/32 mol %) and poly(vinyl acetate) (PVAc) was miscible from the results of differential scanning calorimetry (DSC) studies that exhibit the presence of a single, composition‐dependent glass transition temperature (T_g) and a strong melting point depression for the semicrystalline P(VDF/TrFE) component. However, differences between the DSC and dielectric measurements, which showed a separate P(VDF/TrFE) T_g peak, suggests that the P(VDF/TrFE)/PVAc blends are actually partially miscible. Because of the lower dielectric constant of PVAc and the reduced sample crystallinity caused by the addition of PVAc, both the dielectric constant and the remanent polarization of the copolymer blends decrease with increasing PVAc content. The presence of a small amount of PVAc stabilized the anomalous ferroelectric behavior of ice–water‐quenched P(VDF/TrFE), and the blend portrayed normal polarization reversal behavior after adding only 1 wt % PVAc. The piezoelectric response suggests small changes with an increasing number of poling cycles. It is believed that PVAc affects the D‐E hysteresis behavior at the interface between crystalline and amorphous phases, although much work remains to be done to confirm this hypothesis. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 927–935, 2003     

Thermally stimulated depolarization current in electron‐irradiated poly(vinylidene fluoride‐trifluoroethylene) (56/44 mol %) copolymers

The effect of electron irradiation on poly(vinylidene fluoride‐trifluoroethylene) (56/44 mol %) copolymers was studied with dielectric constant measurements, differential scanning calorimetry (DSC), X‐ray diffraction, thermally stimulated depolarization current (TSDC) spectroscopy, and polarization hysteresis loops. The dielectric relaxation peaks, obeying the Vogel–Fulcher law, indicated that the copolymers were transformed from a normal ferroelectric to a relaxor ferroelectric. The X‐ray and DSC results showed that both the crystalline and polar ordering decreased after irradiation, indicating a partial recovery from trans–gauche bonds to local trans bonds (polar ordering). Moreover, the peak temperature decreased with the irradiation dose in the TSDC spectra; this demonstrated fewer dipoles and crystalline regions in the irradiated copolymer films during the ferroelectric–paraelectric transition and was consistent with polarization hysteresis loop measurements. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1099–1105, 2004     

Effect of annealing on the ferroelectric behavior of nylon - 11 and nylon - 7

We have discovered recently that melt-quenched and cold-drawn Nylon - 11 films exhibit very clear ferroelectric hysteresis behavior. In the present study, a remanent polarization as high as 86 mC/m² has been found in Nylon - 7 samples; this is significantly higher than that usually observed in poly (vinylidene fluoride) films. The effect of annealing on the electric displacement versus electric field characteristics of both Nylon - 11 and Nylon - 7 films have been studied and show an increased coercive field (62 to 115 MV/m for Nylon - 11 and 79 to 97 MV/m for Nylon - 7) and a decreased remanent polarization (51 to 17.3 mC/m² for Nylon - 11 and 86 to 70.5 mC/m² for Nylon - 7) with increasing annealing temperature from 25 to 145°C.     

Thermal stability of poly(vinylidene fluoride) films pre-annealed at various temperatures

This paper investigates the relationship between the pre-annealing conditions and the thermal stability of uniaxially-drawn poly(vinylidene fluoride) (PVDF) films in order to clarify their technical limits in terms of temperatures that can be used for assembly processes and for practical applications. Specimens that are pre-annealed below their melting temperature apparently shrink in the stretch-direction when they are exposed to elevated temperatures above the pre-annealing temperature. Since the content of β-PVDF in the films decreases simultaneously with the shrinkage, their piezoelectric properties also deteriorate. In addition, there is a suggestion that the level of polarization in the remaining β-phase decreases significantly during annealing above 90-100 °C. However, the dimensions and the piezoelectric coefficients of the films remain stable during annealing below the pre-annealing temperature. Therefore, the thermal stability of PVDF films can be controlled practically by using the appropriate pre-annealing temperature. By contrast, the films were softened at 90-100 °C when the pre-annealing treatment was conducted above the melting temperature. The softening of films that are pre-annealed above the melting temperature is a different phenomenon from that observed in specimens that are pre-annealed below the melting temperature.     

Influence of the annealing conditions on the polarization and electromechanical response of high‐energy‐electron‐irradiated poly(vinylidene fluoride trifluoroethylene) copolymer

In this study, we investigated the influence of annealing conditions before irradiation on the ferroelectric and electromechanical properties of uniaxially stretched high‐energy‐electron‐irradiated poly(vinylidene fluoride trifluoroethylene) (HEEIP) copolymer (68/32 mol %) films. For films annealed at one fixed temperature before the irradiation (one‐step annealing), the highest crystallinity, which was highly desirable for enhancing the electromechanical response, was obtained only for films annealed between 132 and 136 °C. In addition, annealing over 10 h in this temperature window resulted in a large increase in the crystal lamellar thickness, which was required for reducing the polarization hysteresis to a minimum in the HEEIP samples. For improvements in the mechanical qualities of the uniaxially stretched films, a two‐step annealing procedure was investigated; that is, before the irradiation, the films were first annealed at a lower temperature to release the mechanical stress in the films due to the stretching and then were annealed in the high‐temperature window to raise the crystallinity and crystalline size. The experimental results indicated that this approach could produce uniaxially stretched HEEIP films with much improved mechanical qualities. Furthermore, the uniaxially stretched HEEIP films with this two‐step annealing exhibited the same electromechanical response as or an even higher one than that from the one‐step‐annealed HEEIP films. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 797–806, 2003     

Growth and characterization of (K<Subscript>0.5</Subscript> Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> thin films by a sol–gel method

(K_0.5 Na_0.5)NbO₃ (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO₂/Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.     

Enhanced ferroelectric,dielectric and leakage properties in Ce and Ti co-doping BiFeO3 thin films

Pure BiFeO₃ (BFO), Ce and Ti individual doping and co-doping BiFeO₃ thin films were fabricated via sol–gel process on Pt/Ti/SiO₂/Si substrates. The microstructure, surface morphology, ferroelectric and dielectric properties of BFO and doped thin films were investigated in detail. X-ray diffraction reveal that all thin films are confirmed the formation of the distorted rhombohedral perovskite structure. No impure phase is identified in all the films. The Ce and Ti co-doping BiFeO₃ (BCFTO) thin films exhibited the enhanced ferroelectricity with a large remnant polarization (2P _r) of 130 μC/cm², and low leakage current density of 9.10 × 10^?6 A/cm² which is more than two orders of magnitude lower than that of pure BFO films at 100 kV/cm. The dielectric constant (364 at 1 kHz) of the BCFTO thin films is much larger than that of pure BFO thin films. These results suggest that the introductions of Ce and Ti provides an effective route for improving the ferroelectric, dielectric and leakage properties of BFO thin films.