Optical spectroscopy of Ce 3+ ions in BaY 2 F 8 single crystals

In the present work we report on the spectroscopic properties of the Ce 3+ ion in BaY 2 F 8 single crystals. The absorption and excitation spectra of the emission centered at 340 v nm have been measured in the temperature range 15-300 v K. The 340 v nm emission consists of two broad partially overlapping bands, peaking at 324 and 347 v nm (at 15 v K), respectively. The full width at half maximum is about 0.5 v eV at room temperature. The absorption spectrum of the lowest in energy component of the f M d transition of Ce 3+ reveals at low temperature a marked vibronic structure. High resolution (0.02 v cm m 1 ) Fourier transform infrared spectroscopy in the wave number range 500-5000 v cm m 1 and in the temperature range 9-300 v K has been exploited to monitor the f level splitting. The absorption transitions from the three Stark components of the 2 F 5/2 manifold to the four of the 2 F 7/2 one, have been monitored in the wave number range 2000-3400 v cm m 1 . The wave number separation at 9 v K between the lowest level of the ground 2 F 5/2 manifold and lowest one of the 2 F 7/2 manifold is found to be 2197.47 v cm m 1 in good agreement with the splitting detected between the two components of the d M f emission.     

LiMBO3 : Dy3+材料的发光特性

采用固相法制备了LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料,并研究了材料的发光特性。LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料的发射光谱均呈多峰发射,对应于Ca,Sr,Ba,其主发射峰分别是Dy³⁺的⁴F_9/2→⁶H_15/2(484,486,486 nm),⁶H_13/2(577,578,578 nm)和⁶H_11/2(668,668,666 nm)跃迁。监测黄色发射峰时,所得激发光 谱峰值位置相同,主激发峰分别为331,368, 397,433,462,478 nm,对应Dy³⁺的⁶H_15/2→ ⁴D_7/2,⁶P_7/2,⁶M_21/2,⁴G_11/2,⁴I_15/2和⁶F_9/2跃迁。研究了敏化剂Ce³⁺及电荷补偿剂Li⁺、Na⁺和K⁺对LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料发光强度的影响。结果显示:加入敏化剂Ce³⁺提高了材料的发光强度,发光强度最大处对应的Ce³⁺浓度为3%;加入电荷补偿剂Li⁺、Na⁺和K⁺后,材料的发光强度也得到了明显提高,但发光强度最大处对应的Li⁺、Na⁺和K⁺浓度不同,依次为4%、4%和3%。     

Photoluminescence and EPR studies on gamma irradiated Ce doped potassium halide single crystals

Electron Paramagnetic Resonance(EPR), Photoluminescence(PL), Thermoluminescence (TL) and other optical studies of γ-irradiated KBr, KCl:Ce³⁺ single crystals. Cerium when doped into the KBr, KCl is found to enter the host lattice in its trivalent state and act as electron trap during γ-irradiation, thereby partially converting itself to Ce²⁺. The Photoluminescence(PL) spectra of both KCl and KBr crystals doped with Ce exhibit the strong blue emissions of Ce corresponding to ⁵d(²D)→²F_5/2 and ⁵d(²D)→²F_7/2 transitions. The defect centers formed in the Ce³⁺ doped KBr and KCl. Crystals are studied using the technique of EPR. A dominant TL glow peak at 374, 422 K and KCl:Ce³⁺ at 466, 475 K is observed in the crystal. EPR studies indicate the presence at two centers at room temperature. Spectral distribution under the thermoluminescence emission(TLE) and optically stimulated emission(OSL) support the idea that defect annihilation process to be due to thermal release of F electron in KBr, KCl:Ce³⁺ crystals. Both Ce³⁺ and Ce²⁺ emissions were observed in the thermoluminescence emission of the crystals.     

Thermally stimulated luminescence properties of BaY 2 F 8 :Ce Crystals

Wavelength resolved thermally stimulated luminescence (TSL) measurements were performed on BaY 2 F 8 :1.8 v mol% Ce crystals after X-ray irradiation at 10 v K and at 300 v K, in order to obtain preliminary information about both trap levels and recombination centres. After irradiation at 10 v K, the TSL glow curve shows the presence of a strong peak at 50 v K, together with additional structures at approximately 20 and 170 v K. The TSL spectrum is dominated by the characteristic doublet emission due to transitions from the lowest energy level of the 5d configuration to the spin-orbit split 2 F ground state of Ce 3+ . Above RT, the glow curve exhibits a peak at 60 v C, whose spectrum is again dominated by Ce 3+ emission. The TSL emission is in accordance with radio-luminescence (RL) spectra performed in the 10-300 v K region. Moreover, RL spectra at temperatures lower than 200 v K display an additional weak high energy band at around 4.5 v eV assigned to host lattice transitions.     

Ce3+,Mn2+激活氟磷酸钙的发光中心及其相互作用

研究了Ce3+,Mn2+激活的氟磷酸钙(FAP:Ce3+,Mn2+)的发光光谱、激发光谱、漫反射光谱、发光衰减以及顺磁共振谱,首次发现了FAP:Ce3+,Mn2+中Ce3+可以形成两种发光中心;同时也发现在该材料中Mn3+的发光中心与普通卤粉相似,即存在MnⅠ和MnⅡ两种中心;研究表明,由Ce3+中心向Mn2+中心的能量传递具有相当高的效率,传递机制属偶极子-偶极子相互作用;在Ce3+→Mn2+能量传递过程中,MnⅠ中心优先被Ce3+中心敏化。     

Defect states in Lu 3 Al 5 O 12 :Ce crystals

Wavelength-resolved TSL measurements after x-ray irradiation at room temperature were performed on undoped, Ce- and (Ce, Zr)-doped Lu 3 Al 5 O 12 crystals. Several glow peaks were observed in the 20-450 v C temperature region, whose intensities and emission spectra are influenced by doping. Namely, the TSL spectra are governed by defect and trace impurity-related emissions in the undoped crystal, while only the Ce 3+ emission is detected in the doped crystals. Moreover, EPR measurements performed at 12 v K revealed typical spectra of Ce 3+ (4f 1 , S =1/2) occupying Lu 3+ substitutional positions. In situ light irradiation (250-330 v nm) of the crystals results in a step-like decrease of the Ce 3+ EPR intensity. Such a behaviour can reflect a creation of Ce 4+ ions under UV irradiation or an increase of the Ce 3+ population in the excited (5d) state.     

Magnetic resonance investigations of LaCl 3 :Ce 3+ scintillators

In undoped and Ce 3+ -doped LaCl 3 EPR has been detected in the X-ray luminescence (XL-EPR) in K-band (25 v GHz) at 1.5 v K. Two excited triplet states with different EPR parameters and spectral shapes could be separated, both triplet states have been attributed to "out-of-plane" self-trapped excitons (STE) in LaCl 3 . No EPR signals of V K centres (self-trapped holes) could be detected in undoped or Ce 3+ -doped LaCl 3 after X-irradiation at low temperatures. X-irradiation of undoped LaCl 3 creates also an EPR spectrum which can be tentatively attributed to F-type defects. The scintillation mechanism is discussed.     

Variation of doping-dependent propertiesin photorefractive Sr x Ba 1−x Nb 2 O 6 : Ce,Cr, Ce+Cr

In congruent Sr x Ba 1 m x Nb 2 O 6 (SBN, x =0.61) the photorefractive properties are significantly enhanced by doping with Ce or Cr. The visible and FIR absorption increases linearly with the dopand concentration up to about 10,000 v ppm (p.f.u.) of Ce or Cr or in double doped crystals (Ce+Cr). Simultaneously a decrease of the phase transition temperature T c from about 253 v K in pure SBN to about room temperature for doping concentrations (of Ce, Cr or both) of about 20,000 v ppm (p.f.u.) is found.     

稀土掺杂碱土金属硫化物晶体中的载流子俘获中心

研究了典型红外激励发光材料XS:Ra,Sm(X=Sr,Ca;Ra=Ce,Eu)的激励发光过程中电子与空穴的俘获中心及其转移过程,通过激发前后的红外吸收光谱的差异及吸收差与光激励谱的细微结构说明,电子俘获中心并不是Sm³⁺离子,但与Sm³⁺离子处于相邻的空间位置关系,Sm³⁺离子在载流子俘获与复合的过程中也没有发生价态或数量的变化,进一步的EPR谱研究表明Eu²⁺离子的价态在激发前后也没有发生变化。与共价性强的Ⅲ-Ⅴ族半导体晶体不同的是,在这类离子性较强的晶体中,载流子被杂质所引起的晶格缺陷而非杂质本身俘获。在多种发光中心的情况下,不同的激发波长可以使空穴束缚在不同的发光中心附近,随后产生不同的光激励发光。     

Congruent Sr 0.61 Ba 0.39 Nb 2 O 6 doubly doped with Ce and Cr: PHoto- and thermoluminescence investigations

Congruent Sr x Ba 1 m x Nb 2 O 6 (SBN, x=0.61) doped with Ce or Cr ions exhibits enhanced photorefractive properties and new spectral features like increased red sensitivity. Here special emphasis is placed on the luminescence features of doubly doped Ce+Cr SBN crystals. The luminescence excitation and emission spectra combined with the absorption of the impurities allow to draw conclusions about the origin of the charge carriers und their recombination. The well separated thermo-luminescence peaks detected and their spectral line shape in emission point to specific recombination processes following the thermal liberation of light-induced electron trapping centers: Nb 4+ polarons and VIS-centers created at low temperature under light irradiation. The thermal activation energy for the hopping motion of Nb 4+ polarons and of VIS-centers are estimated to be 0.18 - 0.02 v eV and 0.30 - 0.05 v eV respectively. Possible excitation and recombination mechanisms in SBN:Ce+Cr are discussed.     

Optical properties and laser potential of dysprosium doped YAl 3 (BO 3 ) 4 (YAB) crystal

The absorption and emission spectra were measured at 5 and 300 v K. The positions of the selected Dy 3+ levels and their Stark components, determined from optical spectra at 5K, are presented. In this work an attempt is made to assess the potential of dysprosium doped YAl 3 (BO 3 ) 4 crystal as a laser active material operating near 570 v nm. The emission cross-section of a potential laser line at 570 v nm connected with 4 F 9/2 M 6 H 13/2 transition was estimated.     

Calculation of the Isotope Shifts on 5S1/2 → 4D3/2,5/2 Transitions of 87,88Sr+

A simple method is applied to calculating the isotope shifts (ISs) on 5S1/2 → 4D3/2,5/2 transitions of 87,88Sr+. First we have calculated the ISs of lower transitions on a series of alkali-like systems such as B2+, Ca+ and Ba+, which are in agreement with other works. Then the ISs on 5S1/2 → 4D3/2,5/2 transitions of 87,88Sr+, which are useful to study the Sr+ optical frequency standard, are evaluated.     

Radiation induced colour centers and damage in YAlO 3 :Ce and YAlO 3 :Ce,Zr scintillators

Radiation induced absorption spectra (irradiation up to 500 v Gy by 60 Co) and TSL of a set of YAP:Ce crystals co-doped by Zr 4+ were investigated. Positive effect of Zr 4+ co-doping was found, namely reduction of both the defect creation and presence of TSL active traps. Up to three absorption bands were observed in the radiation induced absorption spectra. They probably have different origin - from colour centers in the green part of the spectra to change of the Ce 3+ valency in the near UV.     

近紫外荧光粉SrAl_2Si_2O_8∶Ce~(3+)的光致发光特性

采用高温固相反应法制备了xCe~(3+)(x=0.01%,0.05%,0.10%和0.30%)激活的Sr_(1-x)Al_2Si_2O_8近紫外荧光粉,利用X射线衍射(XRD)和扫描电镜(SEM)检测出荧光粉的物相结构,通过光致发光谱(PL)和激发光谱(PLE)表征了荧光粉的发光性质。结果显示,在中波紫外光激发下,发射峰位于长波紫外区,归属于Ce~(3+)的5d→2 F5/2和5d→2 F7/2跃迁。激发波长308nm时,观察到近紫外SrAl_2Si_2O_8荧光粉的发光强度随Ce~(3+)掺杂量增加而先增大后减小,同时发射峰位置红移。280和325nm波长选择性激发条件下的差异性发射行为表明SrAl_2Si_2O_8∶Ce~(3+)具有两种性质不同的发光中心,该结论由监测320和390nm发射时获得的形状具有明显区别的激发光谱亦可得以验证。离子半径的匹配性支持Ce~(3+)优先取代Sr~(2+),同时Van Uitert的经验公式估算结果推断出低浓度的Ce~(3+)生成九配位的Ce(Ⅰ)发光中心,高浓度掺杂情况下部分相互近邻的Ce~(3+)有效配位数减小,形成八配位的Ce(Ⅱ)发光中心。紫外280nm激发下峰位348nm的发射谱带源于Ce(Ⅰ)和Ce(Ⅱ)发光中心共同贡献,紫外325nm激发下发射峰位于378nm的发射带则主要对应于Ce(Ⅱ)发光中心。紫外光激发下Ce~(3+)发射出较强的近紫外光,表明SrAl_2Si_2O_8∶Ce~(3+)是一种适用于研发紫外荧光光源的荧光粉体材料。     

X-ray induced color centres in pure and doped LiYF 4 AND LiLuF 4 single crystals

YLiF 4 and LuLiF 4 pure and doped with Yb 3+ ion were grown by the Czochralski technique under CF 4 atmosphere. X-ray irradiation was used to carry out a comparative study of the induced optical absorption phenomena and color center creation in the ultraviolet and visible spectral regions. The F-center absorption band at 315 and 340 v nm in LLF and YLF, respectively, is the dominating induced absorption feature. The amplitude of the induced absorption is reduced by more than a factor of 10 in Yb-doped crystals compared to the undoped ones.     

Inter- and intraconfigurational luminescence of Er 3+ ions in BaY 2 F 8 under VUV excitation

Using energy- and time-resolved spectroscopy the luminescence properties of Er 3+ doped BaY 2 F 8 crystals were investigated at 10 v K under VUV synchrotron radiation excitation. Radiative intraconfigurational f - f and interconfigurational d - f transitions in Er 3+ ions were observed under f - d excitation. Whereas the onset of 4 S 3/2 population via f - d excitation starts at 59 900 v cm m 1 , efficient excitation of emissions arising from the 2 P 3/2 state begins only above 67 000 v cm m 1 in VUV region. Such behaviour can be explained by a cross-relaxation process of the type ( 2 F(2) 5/2 , 4 I 15/2 ) M ( 2 P 3/2 , 2 P 3/2 ) taking place within f -states of Er 3+ ions finally populating the emitting 2 P 3/2 state.     

Tb3+离子在碱土金属正硅酸盐中的发光

Tb3+离子激活的Me2SiO4(Me=Ca、Sr、Ba)发光材料是用分析纯试剂合成并加以提纯的BaCO3、SrCO3、CaCO3、H2SiO3、Li2CO3和Tb2(C2O4)3为原料,通过固态反应的合成方法而制成的。由X-光衔射谱,确定了样品的结构。通过荧光测量,探讨了Tb3+离子在碱土金属正硅酸盐中的发光行为。     

LiM(M=Ca,Sr,Ba)BO_3∶Tb~(3+)材料光谱特性研究

采用固相法制备了绿色LiM(M=Ca,Sr,Ba)BO3:Tb3+发光材料.测量结果显示材料均可被紫外(350～410 nm)光激发,发射绿光.研究了Tb3+浓度对材料发射光谱的影响,结果显示,随Tb3+浓度的增大,发射光谱峰位未发生变化,但其强度呈现出先增大后减小的趋势,即:存在浓度猝灭效应.加入电荷补偿剂Li+,Na+和K+提高了LiM(M=Ca,Sr,Ba)BO3:Tb抖材料的发射强度.     

γ-Ca_2SiO_4∶Ce~(3+),Al~(3+)荧光粉的合成与发光性能研究

采用高温固相法制备了一系列γ-Ca_2SiO_4∶x Ce~(3+),y Al~(3+)黄色荧光粉,通过X射线衍射仪、扫描电镜、激光粒度仪、荧光光谱仪对荧光粉的结构、形貌和光学性能进行了表征。结果表明,1 200~1 300℃温度下生成β-Ca_2SiO_4,在1 350~1 500℃下生成γ-Ca2SiO_4,Al~(3+)和Ce~(3+)的掺入未改变Ca2SiO_4的结构。在1 450℃下合成的γ-Ca_2SiO_4∶0.5%Ce~(3+),4%Al~(3+)样品的相对发光强度最强。在450 nm激发下,在565 nm处存在一个宽带发射峰,主要源于Ce~(3+)的5d→2F7/2和5d→2F5/2跃迁。荧光粉受热影响较大,在450 nm激发下,样品在475 K时的发光强度降为室温的63%。监控波长为565 nm时,Ce~(3+)的衰减曲线符合单指数衰减规律,荧光寿命为104.2 ns,与其跃迁类型和离子价态基本相符。     

MCeO3：Eu^3＋（M=Sr，Ba）的合成及发光性质研究

利用高温固相反应法合成了Eu^3＋掺杂的MCeO3（M=Sr，Ba）发光粉末样品，采用X射线衍射技术和荧光光谱等测试手段分别对其物相组成和发光性质进行了研究。X射线衍射结果显示，Eu^3＋离子容易替代MCeO3晶格中M^2＋离子的位置。荧光光谱测试结果表明，Eu^3＋掺杂的SrCeO3和BaCeO3样品在紫外波段存在着非常宽的吸收带，峰值分别位于311和320nm左右，它们属于Ce^4＋-O^2-的电荷迁移带，SrCeO3和BaCeO3基质与Eu^3＋离子之间存在着能量转移。在MCeO3：Eu^3＋样品中，Eu^3＋的发射主要来自于^5D0激发态能级，其中以磁偶极跃迁^5D0-^7F1发射强度为最大；此外样品中还存在着较高的^5D1激发态能级的辐射跃迁。SrCe03：EU^3＋样品的发射强度远大于BaCeO3：EU^3＋样品。