Influence of heat treatment process in In<Subscript>2</Subscript>O<Subscript>3</Subscript>-MWCNTs as photoanode in DSSCs

Indium oxide-multi-walled carbon nanotubes (In₂O₃-MWCNTs) were prepared by sol-gel method for DSSCs. The synthesis of indium oxide (In₂O₃) was carried out by dissolving indium chloride (InCl₃) in a solvent of 2-methoxyethanol. Different annealing temperatures of 400, 450, 500, 550, and 600 °C were proposed in this study. The changes in the structural properties were analyzed by means of X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis. The XRD spectrum estimated the average crystallite sizes of 3 nm for each sample. AFM results indicated very rough surface area of the films where it increased linearly from 1.8 to 11 nm as the annealing temperature increases. The In₂O₃-MWCNTs-based DSSC exhibited good photovoltaic performance with power conversion efficiency (η), photocurrent density (J _sc ), open circuit voltage (V _oc ), and fill factor (FF) of 1.13 %, 5.5 mA/cm², 0.53 V, and 0.42, respectively. Even though the film annealed at 450 °C exhibited low τ _eff, it achieved the greatest D _eff of 29.67 cm² s^?1 which provides an efficient pathway for the photogenerated electrons with minimum electron recombination loss that increased the J _sc and V _oc in the DSSC. The obtained structural and electron transport analysis was proposed as a suitable benchmark for In₂O₃-MWCNTs-based dye-sensitized solar cell (DSSCs) application. Hence, this study suggests that the optimum temperature for In₂O₃-MWCNTs is at annealing temperature of 450 °C prepared via sol-gel method.     

Effect of annealing temperature on the structural reorganization of Eu<Superscript>3+</Superscript> optical centers in Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-BiOF gel films

The dependence of the structural reorganization of Eu³⁺ optical centers in Al₂O₃-Eu₂O₃-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C _3V symmetry in the Al₂O₃ structure and the change in symmetry from D ₃ to O _h for a large fraction of EuAlO₃ centers.     

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> matrix

The charge storage behavior of nanostructures based on Si_1?x Ge _x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al₂O₃ matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.     

Magnetic properties of the Gd<Subscript>2</Subscript>V<Subscript>0.67</Subscript>Mo<Subscript>1.33</Subscript>O<Subscript>7</Subscript> and Y<Subscript>2</Subscript>VMoO<Subscript>7</Subscript> pyrochlore compounds

It is demonstrated that 50% substitution of vanadium for molybdenum in the pyrochlore lattice of the complex oxide Y₂(V _x Mo_{1 ? x} )₂O₇ results in a transition from the spin-glass ground state (at x = 0) to the ferromagnetic state in Y₂VMoO₇ (a = 10.1645(2) Å, T _C = 55 K). The Gd₂V_0.67Mo_1.33O₇ compound (a = 10.2862(3) Å) is a ferromagnet with T _C (84 K) exceeding that of undoped Gd₂MnO₂O₇.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Anisotropy of the Complex Permittivity of the Kagome-Staircase Compounds Co<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript> and Ni<Subscript>3</Subscript>V<Subscript>2</Subscript>O<Subscript>8</Subscript>: Experiment and Ab Initio Calculations

The anisotropy of the components of the complex permittivity of vanadate Co₃V₂O₈ and Co₃V₂O₈ single crystals in the paramagnetic phase are studied by optical ellipsometry in the spectral region 0.5–5.0 eV. Our experimental results support the weak anisotropy of the optical response detected earlier for axes a and c. The optical properties are also investigated along axis b. The properties of both compounds are compared. The optical spectra of both compounds along axis b are shifted toward low energies as compared to axes a and c. The maximum of the main interband absorption band of Co₃V₂O₈ is shifted toward low energies by 0.25–0.3 eV as compared to Co₃V₂O₈. The electronic structure parameters of both compounds are determined. Optical function spectra are analyzed using the results of ab initio band calculations.     

Structure,ionic conduction,and phase transformations in lithium titanate Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript>

The spinel structure of lithium titanate Li₄Ti₅O₁₂ is refined by the Rietveld full-profile analysis with the use of x-ray and neutron powder diffraction data. The distribution and coordinates of atoms are determined. The Li₄Ti₅O₁₂ compound is studied at high temperatures by differential scanning calorimetry and Raman spectroscopy. The electrical conductivity is measured in the high-temperature range. It is shown that the Li₄Ti₅O₁₂ compound with a spinel structure undergoes two successive order-disorder phase transitions due to different distributions of lithium atoms and cation vacancies (□, V) in a defect structure of the NaCl type: (Li)_8a[Li_0.33Ti_1.67]_16dO₄ → [Li□]_16c[Li_1.33Ti_1.67]_16dO₄ → [Li_1.33□_0.67]_16c[Ti_1.67□_0.33]_16dO₄. The low-temperature diffusion of lithium predominantly occurs either through the mechanism ... → Li(8a) → V(16c) → V(8a) → ... in the spinel phase or through the mechanism ... → Li(16c) → V(8a) → V(16c) → ... in an intermediate phase. In the high-temperature phase, the lithium cations also migrate over 48f vacancies: ... Li(16c) → V(8a, 48f) → V(16c) → ....     

Effect of low-temperature annealing on the magnetization curve of YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6 + <Emphasis Type="Italic">x</Emphasis></Subscript> ceramics

The effect of low-temperature annealing on the magnetization curve of YBa₂Cu₃O_{6 + x} ceramics in the superconducting state (x ≈ 0.9) is investigated. When the annealing time is fairly long, the field dependence of magnetic moment M exhibits a feature in the form of a plateau, where the value of M remains almost constant. The evolution of this feature in the magnetization curves of annealed samples with annealing time and temperature is studied. It is assumed that low-temperature annealing gives rise to metastable ferromagnetic clusters in YBa₂Cu₃O_{6 + x} ceramics, the contribution of which to the magnetic moment accounts for the feature in the magnetization curves of the annealed samples.     

Chemical and phase compositions of multilayer nanoperiodic <Emphasis Type="Italic">a</Emphasis>-SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/ZrO<Subscript>2</Subscript> structures subjected to high-temperature annealing

The chemical and the phase compositions of multilayer nanoperiodic SiO _x /ZrO₂ structures prepared by vacuum evaporation from separated sources and subjected to high-temperature annealing have been studied by X-ray photoelectron spectroscopy with a layer-by-layer etching. It is found that, under deposition conditions used, the silicon suboxide layers had the stoichiometric coefficient x ~1.8 and the zirconium-containing layers were the stoichiometric zirconium dioxide. It was found, using X-ray photoelectron spectroscopy, that annealing of the multilayer structures at 1000°C leads to mutual diffusion of the components and chemical interaction between ZrO₂ and SiO _x with predominant formation of zirconium silicate at heteroboundaries of the structures. The SiO _x layers of the annealed nanostructures contained ~5 at % elemental silicon as a result of the phase separation and the formation of fine silicon nanocrystals.     

Nonstoichiometric high-pressure phase of Tm<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>3</Subscript>V<Subscript>4</Subscript>O<Subscript>12</Subscript>

Tm _x Cu₃V₄O₁₂, a perovskite-like oxide (space group, Im-3; Z = 2; a = 7.279–7.293 Å) containing vacancies in its cationic sublattice, was obtained barothermally (P = 7.0–9.0 GPa, t = 1000–1100°C) for the first time. The temperature dependences on the electrical resistivity (10–300 K) and the magnetic susceptibility (0–300 K) were investigated. It was shown that the oxide Tm _x Cu₃V₄O₁₂ is characterized by metal-type conductivity and paramagnetic properties.     

Solid state synthesis of nonstoichiometric Bi<Subscript>2</Subscript>WO<Subscript>6</Subscript>/Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> composites as visible-light photocatalyst

Nonstoichiometric Bi₂WO₆ photocatalyst with the composition of Bi_2?+?x WO_6?+?1.5x (?0.25 ≤ x ≤ 1) wa synthesized by a facile solid state reaction method. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-vis absorption spectrum. The Bi_2.5WO_6.75 photocatalyst showed excellent visible-light-driven photocatalytic performance; nearly 100 % of RhB (10 ppm, pH?=?3?~?4) was decomposed within 25 min, which demonstrated that nonstoichiometric semiconductors could be an efficient visible-light-driven photocatalyst.     

The magnetization reversal in CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/CoFe<Subscript>2</Subscript> granular systems

The temperature-dependent field cooling (FC) and zero-field cooling (ZFC) magnetizations, i.e., M _FC and M _ZFC, measured under different magnetic fields from 500 Oe to 20 kOe have been investigated on two exchange–spring CoFe₂O₄/CoFe₂ composites with different relative content of CoFe₂. Two samples exhibit different magnetization reversal behaviors. With decreasing temperature, a progressive freezing of the moments in two composites occurs at a field-dependent irreversible temperature T _irr. For the sample with less CoFe₂, the curves of ?d(M _FC ? M _ZFC)/dT versus temperature T exhibit a broad peak at an intermediate temperature T ₂ below T _irr , and the moments are suggested not to fully freeze till the lowest measuring temperature 10 K. However, for the ?d(M _FC ? M _ZFC)/dT curves of the sample with more CoFe₂, besides a broad peat at an intermediate temperature T ₂, a rapid rise around the low temperature T ₁~15 K is observed, below which the moments are suggested to fully freeze. Increase of magnetic field from 2 kOe leads to the shift of T ₂ and T _irr towards a lower temperature, and the shift of T ₂ is attributable to the moment reversal of CoFe₂O₄.

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Graphical abstract CoFe₂O₄/CoFe₂ composites with different relative content of CoFe₂ were prepared by reducing CoFe₂O₄ in H₂ for 4 h (S4H) and 8 h (S8H). The temperature-dependent FC and ZFC magnetizations, i.e., M _FC and M _ZFC, under different magnetic fields from 500 Oe to 20 kOe have been investigated. Two samples exhibit different magnetization reversal behaviors. With decreasing temperature, a progressive freezing of the moments in two composites occurs at field-dependent irreversible temperature T _irr. For the S4H sample, the curves of ?d(M _FC ? M _ZFC)/dT versus temperature T exhibit a broad and field-dependent relaxing peak at T ₂ below T _irr (figure a), and the moments were suggested not to fully freeze till the lowest measuring temperature 10 K. However, for the S8H sample, it exhibits the reentrant spin-glass state around 50 K, as evidenced by a peak in the M _FC curve (inset in figure b) and as a result of the cooperative effects of the random anisotropy of CoFe₂O₄, exchange–spring occurring at the interface of CoFe₂O₄ and CoFe₂ together with the inter-particle dipolar interaction (figure c); in ?d(M _FC ? M _ZFC)/dT curves, besides a broad relaxing peat at T ₂, a rapid rise around the low-temperature T ₁~15 K is observed, below which the moments are suggested to fully freeze. Increase of magnetic field from 2 kOe leads to the shift of T ₂ and T _irr towards a lower temperature, and the shift of T ₂ is attributable to the moment reversal of CoFe₂O₄.

     

Antisite defects and valence state of vanadium in Na<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>

Electron paramagnetic resonance (EPR) studies have been performed with the aim of determining the valence state and local crystal structure of the nearest environment of vanadium ions in the initial, charged, and discharged samples of the cathode material Na_xV₂(PO₄)₃ (1 ≤ x ≤ 3). It has been found that the charged sample (x = 1) is characterized by an intense signal corresponding to V⁴⁺ ions located in a highly distorted octahedral crystal field. An EPR signal with the g-factor close to the g-factor of the V⁴⁺ ion has also been observed in the initial sample (x = 3), where the intensity of the resonance signal is one order of magnitude lower than that in the charged sample. It has been revealed that the resonance signal under consideration is associated with the formation of antisite defects when a part of vanadium ions are located in sites of sodium ions. It has also been found that the intensity of this signal increases after a complete charge–discharge cycle (x = 3).     

The influence of phase transitions in the Rb<Subscript>2</Subscript>CdI<Subscript>4</Subscript> ferroelastic on the exciton absorption spectrum

The parameters of the long-wavelength exciton band for Rb₂CdI₄ films are investigated in the temperature range 90–410 K. It is found that the Rb₂CdI₄ films undergo a sequence of phase transitions at temperatures T_c1=380 K (paraphase → incommensurate phase), T_c2=290 K (incommensurate phase → ferroelastic phase I), and T_c3 = 210 K (ferroelastic phase I → ferroelastic phase II). The parameters of the exciton band (such as the spectral position and the half-width) measured during heating and cooling of the Rb₂CdI₄ film differ significantly. This is especially true for the incommensurate phase. Upon heating of the incommensurate phase, the domain boundaries become frozen, whereas the cooling of this phase is accompanied by the generation of solitons and their pinning, which, in turn, results in a first-order phase transition at the temperature T_c2. It is revealed that the oscillator strength of the exciton band anomalously increases in the range of existence of commensurate phase I (T_c3<-T<-T_c2) due to ordering of the Rb₂CdI₄ crystal lattice.     

Nonergodic state of relaxation ferroelectric Cd<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>7</Subscript> in a constant electric field

The temperature dependence of the residual polarization of the nonergodic relaxation state (NERS) obtained from the measurements of pyroelectric current during zero-field heating (ZFH) in the temperature interval from 10 to 295 K is investigated for the Cd₂Nb₂O₇ relaxation system in two cases: (1) after sample cooling in a constant electric field E (FC) from T = 295 K to a preset temperature, which is much lower than the “freezing” temperature of the relaxation state (T _f ≈ 182 K), field removal, and subsequent cooling in zero field (ZFC) to T = 10 K and (2) after ZFC from T = 295 K to the same temperature below T _f , application of the same field, and FC to T = 10 K. The behavior of the P _r ^FC (T) and P _r ^ZFC (T) dependences is analyzed. In the field E < 2 kV/cm, the P _r ^ZFC curves as functions of 1/T have a broad low-intensity peak in the region T ≈ T _f , which vanishes in stronger fields, when the P _r ^FC (1/T) curves intersect at T ≈ T _f and have no anomalies. The difference in the behavior of P _r ^ZFC (T) and P _r ^FC (T) indicates the difference in the nature of NERS formed during ZFC and FC of the system upon a transition through T _f . In the ZFC mode, NERS exhibits glasslike behavior; in the FC regime, features of the ferroelectric behavior even in the weak field. Analogous variations of P _r ^ZFC (T) and P _r ^FC (T) in a classical ferroelectric KDP are also given for comparison.     

Transport properties of Co<Subscript>2</Subscript>CrAl Heusler alloy films

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ?(T = 293 K) ～ 200 μΩ cm in comparison to ?(T = 293 K) ～ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Thermophysical study of structural phase transitions in Na<Subscript>0.95</Subscript>Li<Subscript>0.05</Subscript>NbO<Subscript>3</Subscript> solid solution

Temperature dependences of specific heat C_p(T) and coefficient of thermal expansion ;(T) for Na_0.95Li_0.05NbO₃ sodium-lithium niobate ceramic samples are investigated in the temperature range of 100–800 K. The C_p(T) and α(T) anomalies at T₃ = 310 ± 3 K, T₂ = 630 ± 8 K, and T₁ = 710 ± 10 K are observed, which correspond to the sequence of phase transitions N ? Q ? S(R) ? T2(S). The effect of heat treatment of the samples on the sequence of structural distortions was established. It is demonstrated that annealing of the samples at 603 K leads to splitting of the anomaly corresponding to the phase transition Q → R/S in two anomalies. After sample heating to 800 K, the only anomaly is observed in both the C_p(T) and ;(T) dependence. Possible mechanisms of the observed phenomena are discussed.     

Crystallographic characteristics and phase transitions in the [N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CdBr<Subscript>4</Subscript> crystal in the low-temperature range

The results of x-ray structural studies of the [N(C₂H₅)₄]₂CdBr₄ crystal at low temperatures are presented. The unit cell parameters and the thermal expansion coefficients along the main crystallographic directions are measured at temperatures in the range from 90 to 320 K. The integrated intensities of the diffraction reflections are investigated as a function of the temperature. It is shown that the curves a = f(T), c = f(T), I ₅₀₀ = f(T), and I ₀₀₆ = f(T) at temperatures T ₁ ≈ 174 K and T ₂ ≈ 226 K exhibit anomalies in the form of abrupt changes in the lattice parameters and the diffraction reflection intensities. This indicates that the [N(C₂H₅)₄]₂CdBr₄ crystal undergo phase transitions at these temperatures. Moreover, there is an anomaly in the form of a small maximum at the temperature T ₃ = 293 K.     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.