Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

The far-infrared and microwave spectra of the CH radical in the v = 1 level of the XΠ state

Transitions between the spin-rotational levels of the ¹²CH radical in the v = 1 level of the X²Π state have been studied by the technique of laser magnetic resonance at far-infrared wavelengths. The data have been combined with a measurement of lambda-doubling transition frequencies at 7 GHz to determine an improved set of molecular parameters for CH in the v = 1 level. The parameters provide information on the effects of vibrational excitation on the structural properties of CH. Accurate predictions of the transition frequencies between the low-lying levels of the radical in the absence of a magnetic field have also been made.Small inconsistencies in the least-squares fit of the laser magnetic resonance data prompted re-measurement of three far-infrared laser frequencies, the 122.5 μm line of CH₂F₂ pumped by 9R(22), the 122.5 μm line of CH₂F₂ pumped by 9P(8) and the 554.4 μm line of CH₂CF₂ pumped by 10P(14). The new measurements differ by as much as 3.8 MHz from those made previously and are more accurate; they also remove the inconsistencies in the fit. The re-measured frequencies of the two 122.5 μm lines are identical within experimental error which suggests that the far-infrared lasing transition is the same, namely the ^rR₂₃(32) transition in the v₉=1 level of CH₂F₂.     

Development of buffer layers on 30 mm wide textured metal substrates for REBCO coated conductors

We have been studying REBa₂Cu₃O_x (RE: rare earth elements) coated conductors on clad-type substrates. We developed coated conductors on the 10 mm wide clad-type tape, and succeeded in obtaining the maximum critical current of 380 A/cm with the 2.0 μm thick GdBa₂Cu₃O_x superconducting film. At present, we are trying to widen the tape width from 10 mm to 30 mm in order to increase production throughput. We report our recent progress on scaling-up of the buffer layers and their properties.     

Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm × 100 μm, 20 μm × 100 μm and 30 μm × 100 μm and drilled depths between 105 and 110 μm were formed in 300 μm thick bulk 4H-SiC substrates by Ar/F₂ based UV laser drilling (λ = 193 nm) with a pulse width of ∼30 ns and a pulse frequency of 100 Hz. The drilling rate was linearly proportional to the fluence of the laser, however, the rate decreased for the larger via holes. The laser drilling produces much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 μm/min) and the via entry can be tapered to facilitate subsequent metallization.     

A calibrated atomic force microscope using an orthogonal scanner and a calibrated laser interferometer

A compact and two-dimensional atomic force microscope (AFM) using an orthogonal sample scanner, a calibrated homodyne laser interferometer and a commercial AFM head was developed for use in the nano-metrology field. The x and y position of the sample with respect to the tip are acquired by using the laser interferometer in the open-loop state, when each z data point of the AFM head is taken. The sample scanner, which has a motion amplifying mechanism was designed to move a sample up to 100 μm × 100 μm in orthogonal way, which means less crosstalk between axes. Moreover, the rotational errors between axes are measured to ensure the accuracy of the calibrated AFM within the full scanning range. The conventional homodyne laser interferometer was used to measure the x and y displacements of the sample and compensated via an X-ray interferometer to reduce the nonlinearity of the optical interferometer. The repeatability of the calibrated AFM was measured to sub-nanometers within a few hundred nanometers scanning range.     

Effect of thickness and porous structure of SiC layers on the spectral response of the Pd/SiC-pSi Schottky photodiodes

In this work, we study the effect of the thickness and porous structure of silicon carbide (PSC) layers on the electrical properties of Schottky photodiodes by using a palladium (Pd) layer deposited on non-porous silicon carbide (SiC) and porous-SiC (PSC) layers. The non-porous and porous-SiC layers were realized on a p-type silicon (Si(1 0 0)) substrate by pulsed laser deposition using a KrF laser (248 nm) and thermal deposition of a thin Pd layer. The porous structure of the SiC layer deposited was developed by an electrochemical (anodization) method. The electrical measurements were made at room temperature (295 K) in an air ambience. The effect of the porous surface structure and the thickness of the SiC layer were investigated by evaluating electrical parameters such as the ideality factor (n) and barrier height (?_Bp). The thickness of the porous layer significantly affects the electrical properties of the Schottky photodiodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I-V characteristics was found to be dependent on the SiC thickness a value For a thin SiC layer (0.16 μm) n was around 1.325 with a barrier height 0.798 eV, while for a thick layer (1.6 μm), n and ?_Bp were 1.026 and 0.890 eV, respectively for Pd/SiC-pSi. These results indicate Schottky photodiodes with high performance are obtained for thicker SiC layer and for thin layer of PSC. This effect showed the uniformity of the SiC layer. In the same case the ideality factor (n) decreases for Pd/PSC-pSi(1 0 0) for low SiC thickness by report of Pd/PSC-pSi(1 0 0) Schottky photodiodes, but for Pd/PSC-pSi(1 0 0) n increase for large SiC thickness layer. We notice that the barrier height (?_Bp) was reversely depend by report of ideality factor. A spectral response value of (SR) of 34 mA/W at λ = 400 nm was measured for Pd/0.16 μm SiC-pSi Schottky photodiode with low SiC thickness. On the other hand, a value of SR = 0.14 mA/W at λ = 900 nm was obtained when we used PSC layer (Pd/PSC-pSi(1 0 0)). A reverse behaviour occurs for thicker SiC layer. Finally, it was found that the thickness and surface porous structure have strong effect on sensitivity.     

Acquisition of vector hysteresis loops from micro-arrays of nano-magnets

A modified scanning Kerr microscope has been used as a static Kerr magnetometer to acquire in-plane vector hysteresis loops from square Si/Ta(50 Å)/Co₈₀Fe₂₀(40 Å)/Ni₈₈Fe₁₂(108 Å)/Ta(100 Å) elements with size ranging from 123 nm to 10 μm. The nanoscale elements were arranged in square arrays of 4 μm size. The laser beam was focused to a sub-micron spot, while polarization changes were recorded with an optical bridge detector containing a beam-splitting polarizer and two quadrant photodiodes. The coercive field exhibited a non-monotonic increase from 11 Oe in the 10 μm element to 170 Oe in the 123 nm elements. Loops acquired with the field applied parallel to the easy and hard in-plane uniaxial anisotropy axes were observed to become more similar in shape as the element size decreased.     

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB₆) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB₆ deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02 μA was drawn at an applied electric field of 2 V/μm. The field enhancement factor is calculated to be 8913 cm⁻¹, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40 nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 3 h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB₆/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

High power room-temperature design of terahertz quantum cascade laser based on difference frequency generation

Terahertz (THz) quantum cascade lasers (QCLs) are key elements for high-power terahertz beam generation for integrated applications. In this study, we design a highly nonlinear THz-QCL active region in order to increase the output power of the device especially at lower THz frequencies based on difference frequency generation (DFG) process. It has been shown that the output power increases for a 3.2 THz structure up to 1.2 μW at room temperature in comparison with the reported power of P = 0.3 μW in [1]. The mid-IR wavelengths associated with this laser are λ₁ = 12.12 μm and λ₂ = 13.93 μm, which are mixed in a medium with high second-order nonlinearity. A similar approach has been used to design an active region with THz frequency of 1.8 THz. The output power of this structure reaches to 1 μW at room temperature where the mid-IR wavelengths are λ₁ = 12.05 μm, λ₂ = 12.99 μm.     

A widely tunable (5-12.5 μm) continuous-wave mid-infrared laser spectrometer based on difference frequency generation in AgGaS2

A widely tunable (5-12.5 μm) continuous-wave (cw) mid-infrared (mid-IR) laser spectrometer based on difference frequency generation (DFG) by mixing an external-cavity diode laser (ECDL) with a Ti:Sapphire laser in an AgGaS₂ crystal is described. The wide tunability was achieved by tuning laser wavelength associated with crystal angle tuning under type II phase matching condition. A maximum output power of about 66 nW was obtained at 8.06 μm. High resolution spectrum of methane (CH₄) over more than 10 cm⁻¹ near 7.7 μm has been recorded to evaluate the performance of the developed DFG-based mid-IR laser spectrometer.     

Pulsed infrared radiation transmission through chalcogenide glass fibers

Two different kinds of chalcogenide glass IR fibers were evaluated relative to transmission of pulsed IR radiation produced by several laser sources in the wavelength range from 1 to 10 μm. Fibers composed either from As-Se-Te or from As₂S₃ glass, of 250, 500, 750 and 1000 μm and 250, 750 and 1000 μm core diameters were studied, respectively. Attenuation measurements were obtained as a function of the laser energy input and as a function of curvature, wherever this was possible. The output beam quality was also studied using a beam profiler. The lasers used were a Q-switched Nd:YAG laser, emitting at 1.06 μm, a free-running or Q-switched Er:YAG laser emitting at 2.94 μm and a tunable pulsed CO₂ laser emitting in the range of 9.3-10.6 μm. The fibers exhibited better behavior when tested with the Er:YAG laser and they were found fragile in pulsed radiation from the Nd:YAG and the CO₂ laser. The output beam profiles generally showed a central multi-spiking energy distribution.     

Theoretical study of the electro-optic effect of aperiodically poled lithium niobate in a Q-switched dual-wavelength laser

The electro-optic effect of aperiodically poled lithium niobate (APLN) has been theoretically investigated and proposed to use as a Q-switch in a simultaneous dual-wavelength laser. Our analysis shows that the polarization planes of the z-polarized (or y-polarized) dual-wavelength beams can be simultaneously rotated by 90° through a well-constructed APLN with an external electric field applied along the y-axis, which enables Q-switch function in a dual-wavelength laser cavity. Using a Nd:YVO₄ laser operating at 1.0643 μm and 1.3419 μm as an example, we present a design method of APLN by using the so-called simulated annealing algorithm. The influence of the domain errors in fabricating an APLN device is also studied. The results show that the device is not susceptible to the fabrication errors.     

Porous microstructures induced by picosecond laser scanning irradiation on stainless steel surface

A study of porous surfaces having micropores significantly smaller than laser spot on the stainless steel 304L sample surface induced by a picosecond regenerative amplified laser, operating at 1064 nm, is presented. Variations in the interaction regime of picosecond laser pulses with stainless steel surfaces at peak irradiation fluences(F_pk=0.378–4.496 J/cm²) with scanning speeds(v=125–1000 μm/s) and scan line spacings(s=0–50 μm) have been observed and thoroughly investigated. It is observed that interactions within these parameters allows for the generation of well-defined structured surfaces. To investigate the formation mechanism of sub-focus micropores, the influence of key processing parameters has been analyzed using a pre-designed laser pulse scanning layout. Appearances of sub-focus ripples and micropores with the variation of laser peak fluence, scanning speed and scan line spacing have been observed. The dependencies of surface structures on these interaction parameters have been preliminarily verified. With the help of the experimental results obtained, interaction parameters for fabrication of large area homogeneous porous structures with the feature sizes in the range of 3–15 μm are determined.     

Characteristics of a flowing He-SrCl2 vapor laser

An experimental investigation on the characteristics of a flowing He-SrCl₂ vapor laser is carried out. The output power as a function of the SrCl₂ vapor pressure is presented by calculating the radial temperature distribution of the discharge tube. The temporal dependences of the discharge current pulse on the laser pulses at 1 μm, ∼ 3 μm and 6.45 μm lines in strontium atom and ion, as well as the spot modes of the laser beam are measured and analyzed under different laser output power.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Mid-infrared,wide-tunable,continuous-wave Nd:YVO4/PPMgLN intracavity optical parametric oscillator

We obtain a continuous-wave (CW) Nd:YVO₄/PPMgLN intracavity singly resonant optical parametric oscillator (ISRO). The threshold value of the CW-ISRO system is only 2.8 W at 808 nm. When the pump power is 5.5 W, an idle laser output power of 410 mW, and a signal laser output power of 345 mW have been achieved. By changing the grating periods of the domain structure on the PPMgLN wafer, we enable a wide-tunable mid-infrared spectrum of 2.95–4.16 μm and near-infrared spectrum of 1.43–1.66 μm.     

Radial inhomogeneities induced by fiber diameter in electrically assisted LFZ growth of Bi-2212

Superconducting polycrystalline BSCCO fibers of 2:2:1:2 nominal composition were grown by the electrically assisted laser floating zone (EALFZ) technique. An electric current density of 2.1 A cm⁻² was applied through the solid/liquid (S/L) interface. A net effect of the fiber diameter on the as-grown microstructure and on the final superconducting properties is observed. A higher critical current density (∼2520 A cm⁻²) results for the thinner fibers (? = 1.7 mm) comparing to the value (∼1065 A cm⁻²) found for the wider ones (? = 2.5 mm). The steep axial thermal gradient at the S/L interface in the thinner fibers is responsible for its superior texture degree, a crucial parameter for improved current transport properties. Moreover, a Cu-free Bi_x(Sr,Ca)_yO_z phase crystallizes preferentially from the melt in the wider fibers, acting as obstacles to the current flux.     

Construction of a positron microbeam in JAEA

We have developed a positron microbeam using magnetic lenses based on the commercial scanning electron microscope (SEM). A slow positron beam was generated using a handmade source with ²²Na and a solid neon moderator. The beam diameter was 3.9 μm on a target. Two-dimensional image of S parameter was successfully obtained. By introducing a beam pulsing section, positron lifetime measurement beam is also available.     

Potential of Nd:YAG pulsed laser deposition method for coated conductor production

A Nd:YAG laser is environmentally safe and economical with no poisonous or hazardous gases and no expensive gases. We prepared Y123 films by using the fourth harmonic Nd:YAG pulsed laser deposition (PLD) method and optimized the deposition conditions on MgO single crystalline substrates and IBAD-MgO substrates for Y123 coated conductor. We found that the optimal deposition conditions acquired bi-axially aligned Y123 films on both substrates with T_c ∼ 90 K and J_c > 1 MA/cm² at 77 K in self-field. For obtaining high I_c, we fabricated thick Y123 films on both substrates and the maximum I_c per 1 cm in width reached 186 A/cm-width on the IBAD-MgO substrate. Interestingly, there were no a-axis oriented grains within the films up to 1.8 μm thick. This might be an especial feature of the Nd:YAG-PLD method. We believe that the Nd:YAG-PLD method is promising method for RE123 coated conductor production.