Synthesis and characterization of Bi3.15Nd0.85Ti3O12 nanotube arrays

Nd-substituted bismuth titanate (Bi_3.15Nd_0.85Ti₃O₁₂, BNT) nanotube arrays are fabricated by means of a sol–gel method utilizing porous anodic aluminum oxide (AAO) template. The morphologies and structures have been determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The diameter and length of these nanotubes are about 200 nm and 60 μm, respectively, and their wall thickness is about 30 nm. The average grain size is around 40 nm. XRD data show that the BNT nanotubes possess bismuth-layered perovskite structure. High-resolution electron microscopy (HRTEM) image demonstrates that the BNT nanotubes are polycrystalline. Polarization–electric field (P–E) response curves of BNT nanotube arrays were measured, and a size induced polarization reduction phenomenon is observed.     

Optical Properties of Pb-Doped Bi2Te3 Single Crystals

The reflectance and the transmittance spectra in the IR region were measured on Pb-doped Bi₂Te₃ single crystal samples grown by a modified Bridgman technique. The plasma resonance frequency, the optical relaxation time, and the high-frequency permittivity were determined by fitting the Drude-Zener formulas to the reflectance spectra. It was found that Pb impurities in Bi₂Te₃ behave as acceptors. A part of incorporated Pb atoms behaves as electrically inactive. This effect is explained as due to the fact that electrically active Pb-atoms form substitutional defects, Pb′_Bi, and the others form inactive two-dimensional defects — seven-layer lamellae Te—Bi—Te—Pb—Te—Bi—Te. The transmittance spectra were used for the determination of the dependence of the absorption coefficient K on the energy of incident photons. The optical width of the energy gap increases with increasing Pb content. The values of the exponent α from the relation of K ∼ λ^α for the long-wavelength absorption edge range within the interval of 1.6 to 2.8, i.e. the dominant scattering mechanism of free current carriers in Pb-doped Bi₂Te₃ crystals is the scattering by acoustic phonons. By comparison of the effect of doping atoms of the IV.B group of the periodic table on the concentration of holes in Bi₂Te₃ crystal lattice was concluded that the tendency to form substitutional defects Me′_Bi (Me = Ge, Sn, Pb) in these crystals increases from Ge to Pb, whereas the tendency to the formation of seven-layer lamellae Te—Bi—Te—Me—Te—Bi—Te decreases.     

Bi2Te3 Crystals Heavily Doped with Germanium Atoms

Elemental Bi, Te, and Ge of 5N purity were used to prepare Bi₂Te₃(GeTe) single crystals with germanium content varying from 0 up to 2.3 × 10²¹ cm⁻³. The samples were characterized by reflectivity measurements in the plasma resonance frequency range and by measurements of the electrical conductivity. Germanium content in the samples was determined by means of energy dispersive analysis. The reflectivity spectra were interpreted on the basis of the Drude-Zener theory in the aim to obtain information on the concentration of the free carriers in the samples. It was found that Ge atoms in the Be₂Te₃ crystal lattice behave as acceptors. A comparison of the hole concentration with the amount of germanium built into the crystal lattice revealed that only about 1/100 of the total number of Ge atoms act as acceptors. This effect is explained by two different ways of incorporation of Ge atoms into the Bi₂Te₃ lattice, viz: the formation of substitutional Ge'_Bi defects acting as acceptors and the formation of seven-layer-lamellae of the Te Bi Te Ge Te Bi Te composition, which corresponds to the structure of GeBi₂Te₄.     

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

Vertically aligned SnO₂ nanowires (NWs) were grown for the first time by a vapor–liquid–solid method on c-sapphire with gold as a catalyst under Ar gas flow. Electron backscatter diffraction analysis indicated the NWs are single crystalline having the rutile structure, grow vertically along the [1 0 0] direction, and exhibit a consistent epitaxial relationship where lattice mismatch is estimated to be 0.3% along the SnO₂ [0 1 0] direction. The growth of these NWs is sensitive to many parameters, including growth duration, substrate type, source vapor concentration, and the thickness of the catalyst layer. Photoluminescence measurements at room temperature showed that the vertically aligned NWs exhibit an intense transition at 3.64 eV, a near band-edge transition which is rarely observed in SnO₂.     

From Te nanotubes to CoTe2 nanotubes: A general strategy for the formation of 1D metal telluride nanostructures

The transformation of Te nanotubes to CoTe₂ nanotubes have been achieved through a solvothermal process in a mixed solvent of ethylene glycol (EG) and oleic acid (OA) at 200 °C for 24 h. Single crystalline Te nanotubes generated in situ could serve as the Te source and template, and then transformed as self-assembly CoTe₂ nanotubes. In the unique reaction system, CoTe₂ nanotubes were obtained when the volume ratio of EG and OA (V_EG/V_OA) was 5/3. The facile approach was extended to prepare other 1D telluride nanostructures, including CdTe, PbTe, Sb₂Te₃ and Bi₂Te₃.     

Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures

We have performed a detailed investigation of the metal-organic chemical vapor deposition (MOCVD) growth and characterization of InN nanowires formed on Si(1 1 1) substrates under nitrogen rich conditions. The growth of InN nanowires has been demonstrated by using an ion beam sputtered (∼10 nm) Au seeding layer prior to the initiation of growth. We tried to vary the growth temperature and pressure in order to obtain an optimum growth condition for InN nanowires. The InN nanowires were grown on the Au+In solid solution droplets caused by annealing in a nitrogen ambient at 700 °C. By applying this technique, we have achieved the formation of InN nanowires that are relatively free of dislocations and stacking faults. Scanning electron microscopy (SEM) showed wires with diameters of 90–200 nm and lengths varying between 3 and 5 μm. Hexagonal and cubic structure is verified by high resolution X-ray diffraction (HR-XRD) spectrum. Raman measurements show that these wurtzite InN nanowires have sharp peaks E₂ (high) at 491 cm⁻¹ and A₁ (LO) at 591 cm⁻¹.     

A catalyst-free method to silicon nanowires at relative low temperature

Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN₃ and Na₂SiF₆ at 600 °C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 °C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.     

Preparation of Sb2S3 nanomaterials with different morphologies via a refluxing approach

Single-crystalline antimony trisulfide (Sb₂S₃) nanomaterials with flower-like and rod-like morphologies were successfully synthesized under refluxing conditions by the reaction of antimony trichloride (SbCl₃) and thiourea with PEG400 and OP-10 as the surfactants. X-ray diffraction (XRD) indicates that the obtained sample is orthorhombic-phase Sb₂S₃ with calculated lattice parameters a=1.124 nm, b=1.134 nm and c=0.382 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show that the flower-like Sb₂S₃ is 9–10 μm in size, which is composed of thin leaves with thickness of 0.05–0.2 μm, width of 0.8–2.2 μm and length of 2.5–3 μm, and the rod-like Sb₂S₃ is 45–360 nm in diameter and 0.7–4 μm in length, respectively. UV–Vis analysis indicates that the band gap of Sb₂S₃ nanorods is 1.52 eV, suitable for photovoltaic conversion. A possible mechanism of formation was proposed. The effects of reaction time and surfactants on the growth of nanomaterials with different morphologies were also investigated.     

Synthesis and optical properties of high-purity CoO nanowires prepared by an environmentally friendly molten salt route

CoO nanowires with diameters of 50^_80 nm, and lengths of up to more than 5 μm have been successfully synthesized by a simple environmentally friendly molten salt route, in which the precursor CoCO₃ nanoparticles are decomposed to form high-purity CoO nanowires in NaCl flux. The structure features and morphology of the as-prepared CoO nanowires were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and selected area electron diffraction (SAED). The chemical composition and oxidation state of the prepared nanowires were systemically studied by X-ray photoelectron spectra (XPS) and laser Raman spectroscopy. The results indicated that the as-prepared CoO nanowires were composed of pure cubic CoO phase. The growth mechanism of the synthesized nanowires was also discussed in detail based on the experimental results.     

Template free-solvothermaly synthesized copper selenide (CuSe,Cu2−xSe, β-Cu2Se and Cu2Se) hexagonal nanoplates from different precursors at low temperature

Nonstoichiometric (Cu_2−xSe) and stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates have been synthesized using different general and convenient copper sources, e.g. copper chloride, copper sulphate, copper nitrate, copper acetate, elemental copper with elemental selenium, friendly ethylene glycol and hydrazine hydrate in a defined amount of water at 100 °C within 12 h adopting the solvothermal method. Phase analysis, purity and morphology of the product have been well studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray diffraction (EDAX) techniques. The structural and compositional analysis revealed that the products were of pure phase with corresponding atomic ratios. SEM, TEM and HRTEM analyses revealed that the nanoplates were in the range 200–450 nm and the as-prepared products were uniform and highly crystallized. The nanoplates consisted of {0 0 1} facets of top–bottom surfaces and {1 1 0} facets of the other six side surfaces. This new approach encompasses many advantages over the conventional solvothermal method in terms of product quality (better morphology control with high yield) and reaction conditions (lower temperatures). Copper selenide hexagonal nanoplates obtained by the described method could be potential building blocks to construct functional devices and solar cell. This work may open up a new rationale on designing the solution synthesis of nanostructures for materials possessing similar intrinsic crystal symmetry. On the basis of the carefully controlled experiments mentioned herein, a plausible formation mechanism of the hexagonal nanoplates was suggested and discussed. To the best of our knowledge, this is the first report on nonstoichiometric (Cu_2−xSe) as well as stoichiometric (CuSe, β-Cu₂Se and Cu₂Se) copper selenide hexagonal nanoplates with such full control of morphologies and phases by this method under mild conditions.     

Facile solvothermal synthesis,growth mechanism and thermoelectric property of flower‐like Bi2Te3

Hierarchical flower‐like Bi₂Te₃ was synthesized through a facile solvothermal method. The crystal structure and morphology of the as‐prepared samples were characterized by X‐ray diffraction (XRD), filed emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and high resolution TEM. The reaction parameters such as reaction time, the amount of glucose, concentration of NaOH and the reaction temperature were systematically investigated. Based on the FESEM observations, a possible mechanism defined as a self‐assembly process accompanied by anisotropic growth mechanism was proposed. Moreover, the thermoelectric properties were measured at the temperature range of 300–600 K. The hierarchical flower‐like Bi₂Te₃ presented good thermoelectrical properties. The maximum ZT value reached up to 0.6 at 600 K, which was higher than that of Bi₂Te₃ nanoparticles.     

A simple method to synthesize α-Si3N4, β-SiC and SiO2 nanowires by carbothermal route

α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si₃N₄ nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiO_x layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.     

Te NMR chemical shifts and tellurium coordination environments in crystals and glasses in the Ge-As-Sb-Te system

The local coordination environments of Te atoms have been investigated in crystalline and glassy binary and ternary tellurides in the system Ge-As-Sb-Te using ¹²⁵Te solid-state wideline nuclear magnetic resonance (NMR) spectroscopy. The average ¹²⁵Te NMR chemical shifts in these materials range from 300 to 1050, 90 to 700 and − 2000 to − 4100 ppm for 2, 3 and 6-coordinated environments, respectively. Te atoms are predominantly 2-coordinated in binary Ge-Te, As-Te and ternary Ge-As-Te glasses. The ¹²⁵Te NMR spectrum of the cubic Ge₁Sb₂Te₄ phase with rock salt structure is consistent with a random distribution of Ge/Sb vacancies in the lattice. Besides the coordination number, the ¹²⁵Te chemical shifts in these materials are also found to be sensitive to the chemical identity of the nearest neighbors. ¹²⁵Te NMR spectroscopy shows significant future promise in its application as a technique complementary to diffraction and EXAFS in understanding the short-range structure of amorphous Ge-As-Sb tellurides.     

Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

Impurity doping on semiconductor nanowires formed via vapor–liquid–solid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO₂ nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition

Tungsten trioxide (WO₃) nanobelts in tetragonal structure were grown on Si substrates by a hot-wall chemical vapor deposition (CVD) method without using catalysts. The products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectrum. The width of the nanobelts is in the range of 50–100 nm with width-to-thickness ratios of 5–10 and lengths of up to tens of micrometers. These nanobelts grew along the [0 0 1] direction and can be identified as the tetragonal WO₃ structures. Raman and PL measurements indicate the high quality of the nanobelts. The vapor–solid growth mechanism could be applicable in our experiment.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.