首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
In this work, CuO/n-Si and AuNPs-decorated CuO/n-Si heterojunction photodetectors were fabricated by deposition of CuO nanoplatelets and Au nanoparticles NPs decorated CuO nanoplatelets on silicon substrates by laser ablation in methanol. Atomic force microscope AFM, scanning electron microscope SEM and transmission electron microscope TEM were used to study the structural and surface morphology of CuO and AuNPs–CuO. The electrical properties showed that the CuO/Si and AuNPs decorated-CuO/Si showed rectifying behavior. The maximum values of quantum efficiency were about 41 and 78% at 700 nm for CuO/Si and AuNPs–CuO/Si photodetectors, respectively. The I–V characteristics of the photodetectors were measured under UV light.  相似文献   

2.
The effect of gamma-ray irradiation on the dc electrical conductivity of CuO–PbO glasses has been studied as a function of temperature. A 33% CuO–67% PbO glass composition has been prepared, using the melt-quenching technique. The samples have been irradiated to a dose of 0.5 MGy using a 60Co γ-source. The electrical conductivity of this glass composition was investigated before and after gamma-ray irradiation. The values of the dc electrical conductivity have been measured from 303 to 373 K, and the activation energy of samples before and after gamma irradiation has been calculated. The observed data show that the electrical conductivity increases with temperature and following gamma irradiation. The electrical conductivity of CuO–PbO can be interpreted in terms of mixed ionic–electronic conduction.  相似文献   

3.
Fabrication of cuprous and cupric oxide thin films by heat treatment   总被引:1,自引:0,他引:1  
Cuprous oxide (Cu2O) and cupric oxide (CuO) thin films were prepared by thermal oxidation of copper films coated on indium tin oxide (ITO) glass and non-alkaline glass substrates. The formation of Cu2O and CuO was controlled by varying oxidation conditions such as, oxygen partial pressure, heat treatment temperature, and oxidation time. The microstructure, crystal direction, and optical properties of copper oxide films were measured with X-ray diffraction, atomic force microscopy, and optical spectroscopy. The results indicated that the phase-pure Cu2O and CuO films were produced in the oxidation process. Optical transmittance and reflectance spectra of Cu2O and CuO clearly exhibited distinct characteristics related to their phases. The electrical properties indicated that these films formed ohmic contacts with Cu and ITO electrode materials. Multilayers of Cu2O/CuO were fabricated by choosing the oxidation sequence. The experimental results in this paper suggest that the thermal oxidation method can be employed to fabricate device quality Cu2O and CuO films that are up to 200–300 nm thick.  相似文献   

4.
Composite energetic material response to electrical stimuli was investigated and a correlation between electrical conductivity and ignition sensitivity was examined. The composites consisted of micrometer particle aluminum combined with another metal, metal oxide, or fluoropolymer. Of the nine tested mixtures, aluminum (Al) with copper oxide (CuO) was the only mixture to ignite by electrostatic discharge. Under the loose powder conditions of these experiments, the Al–CuO minimum ignition energy (MIE) is 25 mJ and exhibited an electrical conductivity two orders of magnitude higher than the next composite. This study showed a similar trend in MIE for ignition triggered by a discharged spark compared with a thermal hot wire source.  相似文献   

5.
Sodium borophosphate glasses doped with copper ions having general composition 20Na2O-20ZnO-25B2O3-(35-x) P2O5-x CuO (x=1-8 mol %) were prepared using conventional melt-quench method and characterized by density, UV-visible optical absorption, photoluminescence and conductivity measurements. Eoptical values for different glass samples are found to decrease systematically from 3.5 to 2.5 eV with increase in CuO content in the glass. Network modifying action of CuO with the glass network has been confirmed from the UV-visible optical absorption studies. Presence of Copper in the form of Cu+ species has been confirmed from photoluminescence measurements. The electrical conductivity (σ) increases with increase in copper oxide content in the glass and temperature dependence of electrical conductivity confirmed the semiconducting nature of the samples.  相似文献   

6.
Nanostructured composites based on copper oxide and cerium dioxide phases [CuO-CeO2] were elaborated from sol-gel route, with weight fractions of CuO phase ranging between 0 and 0.4. They are interesting potential catalysts allowing conversion of CH4 and CO into CO2 and H2O and might be used in miniaturized gas sensors. An electrical study of this nanostructured system was carried out to determine catalytic behaviours under air-methane impulses at 350 °C. The electrical analysis was based on a specific homemade electronic device. Time dependent interactions between gas pulses and solid catalyst (CuO/CeO2) were analyzed from a frequency modification of the electronic device. Kinetic parameters were determined from a model describing adsorption and desorption of gases adapted to short interaction time between gas and solid. These time dependent electrical behaviours were then correlated with infrared spectroscopy analyses allowing time dependent analysis of methane conversion into CO2 gas, for long interaction time between gas and solid.  相似文献   

7.
The effect of carbon filler on the electrical resistance and the thermopower of copper oxide-based composites produced by ceramic technology by hot pressing has been studied. It is found that the dependences of the electrical resistivity on the filler concentration are characteristic by S-like curves that are typical of percolation systems; in this case, the resistivity decreases more substantially as the carbon content increases as compared to the decrease in thermopower value, which is accompanied by the existence of the maximum of the factor of thermoelectric power near the percolation threshold. The studies of the temperature dependences of the resistivity and the thermopower at low temperatures show that, in the range 240–300 K, the predominant mechanism of the electrotransfer of all the composites under study is the hopping mechanism. At temperatures lower than 240 K, the composites with a nanocrystalline CuO matrix have a hopping conductivity with a variable hopping distance over localized states of the matrix near the Fermi level, which is related to the conductivity over intergrain CuO boundaries. A schematic model of the band structure of nanocrystalline CuO with carbon filler is proposed on the base of the analysis of the found experimental regularities of the electrotransfer.  相似文献   

8.
We have performed a detailed study of the electrical conduction process in CuO thin films deposited by the sol-gel dip coating technique in a temperature range 280-420 K. The electrical conduction is analyzed within the framework of various hopping conduction models. Multiphonon hopping conduction mechanism is found to dominate the electrical transport in the entire temperature region. Our results are consistent with this model of hopping conduction mechanisms with weak carrier-lattice coupling.  相似文献   

9.
Powder energetic materials are highly sensitive to electrostatic discharge (ESD) ignition. This study shows that small concentrations of carbon nanotubes (CNT) added to the highly reactive mixture of aluminum and copper oxide (Al + CuO) significantly reduces ESD ignition sensitivity. CNT act as a conduit for electric energy, bypassing energy buildup and desensitizing the mixture to ESD ignition. The lowest CNT concentration needed to desensitize ignition is 3.8 vol.% corresponding to percolation corresponding to an electrical conductivity of 0.04 S/cm. Conversely, added CNT increased Al + CuO thermal ignition sensitivity to a hot wire igniter.  相似文献   

10.
Electrical transport properties in CuO thin films processed using d.c. magnetron sputtering technique is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent conductivity of the investigated films is controlled by the multi-phonon hopping conduction mechanism. A detailed analysis in terms of carrier hopping parameters is used to correlate electrical transport properties with the d.c. magnetron sputtering conditions.  相似文献   

11.
Undoped and doped indium tin oxide (ITO) with different concentrations (2, 4, and 6 mol%) of different dopants (CuO, Cr2O3, and ZrO2) were prepared in the nano-size scale (19–33 nm) using Pechini method. The thermal decomposition of the precursors was studied. The electrical properties of all the prepared samples were investigated. All the investigated systems have higher conductivity than that of ITO. For ITO doped with CuO, as the concentration of CuO increases, the conductivity increases. The highest conductivity was obtained for ITO doped with 6 mol% of CuO. For ITO doped with Cr2O3, as the concentration of Cr2O3 increases the conductivity increases and above 4 mol% Cr2O3 the conductivity decreases. For ITO doped with ZrO2, as the ZrO2 concentration increases, the conductivity increases up to 4 mol% of ZrO2 and then decreases. The band gap was detected for all the investigated systems.  相似文献   

12.
The influence of the third harmonic radiation of a YAG: Nd3+ laser on the microstructure, chemical composition, and electrical conductivity of CuO and CuO/Ag ceramic samples subjected to heat treatment under different conditions has been investigated. It has been found that the surface morphology is almost identical for all the samples sintered at the same temperatures. According to the X-ray microanalysis, the ratio of the copper and oxygen concentrations (Cu/O) increases with an increase in the sintering temperature and upon quenching cooling of the samples. It has been shown that laser irradiation changes the micro-structure of the samples, increases the concentration ratio Cu/O, and leads to the inclusion of silver atoms into the lattice of copper oxides. It has been revealed that the temperature dependence of electrical resistance of all the studied samples in the temperature range of 80–300 K has a semiconducting character, and the activation energy of electrical resistance varies in the range from 0.19 to 0.48 eV. The activation energy of electrical resistance decreases with an increase in the sintering temperature of the samples and increases upon their quenching, whereas the laser treatment leads to a weakening of the dependence of the activation energy on the sintering temperature. The deposition of a silver layer before the laser treatment has no noticeable influence on the activation energy. The obtained data can be used to purposefully change the physical properties of compounds formed in the Cu-O-Ag system.  相似文献   

13.
Nanostructured CuO films have been grown on to the glass substrate by varying the deposition time from 10 to 30 min and substrate temperature from 300 to 400 °C by a simple ultrasonic spray pyrolysis technique, using aqueous a cupric nitrate solution as precursor. The effect of the substrate temperature on the textural, structural, electrical, and gas sensing properties of CuO films was studied and correlated. Thermal analysis of the dried precursor shows the elimination of physisorbed and chemisorbed water. It suggests the formation of CuO phase on substrate at temperature of 300 °C. X-ray diffractograms of the films indicate the formation of polycrystalline monoclinic CuO having monoclinic with crystallite size around 18 nm. The texture coefficient finds the (0 0 2) plane as the preferred orientation in films. The microstrain and dislocation densities have been calculated and found to decreases with increase in substrate temperature. The scanning electron micrographs indicate the formation of trapezium like facet structures on the film surface. AFM analysis shows uniform deposition of the CuO film over the entire substrate surface. Observations reveal that the film deposited at 300 °C show comparatively higher activation energy and appreciable response to ammonia at room temperature. The use of aqueous cupric nitrate as precursor results in the deposition of single phase copper oxide films.  相似文献   

14.
The electrical properties of pure and Li2O-doped CuO/Fe2O3 solids were investigated. Pure and variously doped solids were subjected to thermal treatment at 1073–1273 K and the amount of dopant was varied between 0.84 to 3.36 mol%. The effect of precalcination temperature and amount of Li2O added on the electrical conductivity σ, activation energy Ea and dielectric constant * were studied. The variation of ′ and ″ as a function of frequency for pure and variously doped solids precalcined at different temperatures was also investigated. The results obtained were discussed.  相似文献   

15.
Water vapor is an important constituent of any gas and in many applications is regarded as a contaminant that needs to be monitored and controlled. AIN-CuO composites (2 % ≤ CuO ≤ 50 % by weight) have been studied to exploit them as novel humidity sensors over wide ranges of moisture levels and temperature. Development of benign microstructure with open porosity has been attempted by varying the composition and firing conditions. The impedance data acquired on the composites over the frequency range 5 Hz to 13 MHz, revealed a bulk response in terms of a single semicircular relaxation in the complex Z*-plane. A systematic variation of electrical conductivity with CuO content in the composites has been explained in the light of percolation theory.  相似文献   

16.
用浸渍法制备了CuO/Al2O3 (Cu/Al)、CuO/CeO2- Al2O3 (Cu/CeAl)和CuO/La2O3-Al2O3(Cu/LaAl)催化剂. 通过原位XRD、Raman和H2-TPR方法, 对催化剂中的CuO物种以及CuO-Al2O3的固-固相反应进行了表征. 结果表明,对于Cu/Al催化剂,CuAl2O4存在于CuO与Al2O3层之间,CuO以高分散和晶相两种相态存在于催化剂的表层;对于Cu/CeAl催化剂,除了少量高分散和晶相的CuO存在于表层外,大部分CuO迁移到了CeO2的内层,  相似文献   

17.
The electrical transport properties of epitaxial superconducting Bi(2+y)Sr(2-x-y)La(x)CuO(6+delta) thin films have been studied in magnetic fields. Using a modified Coulomb-gas scaling law, we can fit all the magnetic field dependent low resistance data with a universal scaling curve, which allows us to determine a relation between the activation energy of the thermally activated flux flow resistance and the characteristic temperature scaling parameters.  相似文献   

18.
(CuAlO2)1-x(Ag2O)x specimens with 0 ≤ x ≤ 0.06 were prepared through the sintering of mixtures of CuO, Al2O3 and Ag2O powders at 1373 K. Hall effect, Seebeck coefficient and electrical conductivity measurements were subsequently employed to assess the electrical transport properties. The electrical conductivity of the as-sintered samples was found to increase with Ag2O addition as a result of increases in the carrier density. Over the temperature range of 323–623 K, the transport properties can be attributed to thermally activated transitions from the acceptor state to the valence band. In contrast, the variable range hopping theory is applicable over the temperature range of 623–873 K. Ag2O addition evidently reduces the defect binding energy in the electronic structure of the CuAlO2. The addition of this compound also obstructs the formation of both a spinel phase and CuO, such that the oxygen off-stoichiometry value and the carrier density are increased with increasing Ag2O levels. The presence of Ag metal has the main effect on thermal conductivity below 400 K, while above 400 K increases in the phonon concentration affect the conductivity. The highest value obtained for the figure of merit was 0.0044 at 573 K, from a sample containing 0.2 at.% Ag2O.  相似文献   

19.
通过反应磁控溅射在n型硅和玻璃衬底上制备了p型CuO薄膜.使用X射线衍射仪和紫外-可见光-近红外光度计研究了p型CuO薄膜的结构和光学特性,得出其平均晶粒尺寸和光学带隙分别为8nm和1.36eV.通过研究其电压-电流关系确定了在p型CuO薄膜和n型硅衬底之间形成了p-n结.在AM 1.5光照条件下p-CuO/n-Si电池的开路电压为0.33V,短路电流密度为6.27mA/cm2,填充因数和能量转化效率分别为0.2和0.41%.  相似文献   

20.
激光驱动含能复合飞片速度特性   总被引:1,自引:0,他引:1       下载免费PDF全文
采用真空磁控溅射方法制备了CuO/Al2O3/Al,(CuO/Al)Ⅱ/CuO/Al2O3/Al,(CuO/Al)Ⅷ/Al2O3/Al三种复合飞片,利用激光共聚焦显微镜和扫描电镜对复合飞片进行表征,结果表明,不同材料膜层的分界面清晰可见,复合薄膜的表面结构致密,颗粒基本尺寸可以达到nm级,均匀性好。利用光子多普勒测速技术对三种复合飞片速度进行测量,结果表明:将飞片靶放置在空气电离点偏前的位置(入射激光方向),增大聚焦光斑,能改善激光电离空气引起的能量屏蔽作用;含能烧蚀层CuO/Al的存在,有助于提高飞片速度。在含能薄膜烧蚀层厚度一定的情况下,增大周期、减小每层薄膜厚度,有助于提高含能薄膜反应程度,减小飞片上升沿时间。在同等激光能量密度下,(CuO/Al)Ⅷ/Al2O3/Al的上升沿时间低于(CuO/Al)Ⅱ/CuO/Al2O3/Al。  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号