Epitaxial and graphoepitaxial growth of isotactic polypropylene (iPP) from the melt on highly oriented high density polyethylene (HDPE) substrates

Although under normal conditions only the crystallization behavior of PE on oriented iPP substrates can be studied due to the higher melting point of iPP, the faster crystallization rate of a molten, oriented HDPE film compared to a nonoriented iPP layer was used to study the crystallization of iPP on the oriented HDPE film by means of transmission electron microscopy (TEM) and electron diffraction (ED). Besides the known epitaxial relationship of HDPE/iPP with their chains 50° apart, two new orientation relationships with (a) chains of both polymers parallel and (hk0)_iPP in contact with the HDPE substrate, and (b) the a‐axis of iPP crystals parallel to the chain direction of HDPE but (001)_iPP in contact with the HDPE substrate were observed. Both orientations are assumed as graphoepitaxy. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 1893–1898, 1999     

聚丙烯/高密度聚乙烯高取向共混物的附生结晶

<正> 最近,聚合物之间的附生结晶引起人们的极大兴趣和关注。附生结晶是一种结晶物质在另一种结晶物质上的取向生长,二者之间有特殊的作用。这种附生作用对结晶聚合物共混体系的形态结构和性能有极为重要的影响。本工作以电子显微镜方法研究熔体拉伸直接导致等规聚丙烯(iPP)和高密度聚乙烯(HDPE)共混物附生结晶。     

Polyethylene–isotactic polypropylene epitaxy: Analysis of the diffraction patterns of oriented biphasic blends

Diffraction patterns of oriented blends of isotactic polypropylene (iPP) and polyethylene (PE) published recently by several authors are analyzed on the basis of a unique epitaxial relationship between the iPP and PE crystal lattices. The contact planes are (100)_PE and (010)_iPP, and the PE chains lie at 50° to the iPP chain axis, parallel to the helical path of the iPP helices, which is formed by rows of side-group methyls.     

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001]_InN//[001]_HfN//[001]_MgO. X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.     

Epitaxial behavior of HDPE on the boundary of highly oriented iPP substrates

The epitaxial crystallization behavior of high-density polyethylene on the boundary of highly oriented isotactic polypropylene (iPP) substrates has been investigated by means of atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results obtained from AFM and TEM indicate that the epitaxial nucleation of HDPE on the highly oriented iPP substrates occurs earlier than that in the pure HDPE phase, i.e., homogeneous nucleation. Therefore the epitaxially grown HDPE lamellae can grow across the boundary of the iPP substrate into the HDPE spherulitic phase with the epitaxial orientation relationship remaining.     

Single-step sol-gel deposition and dielectric properties of 0.4 μm thick, (001) oriented Pb(Zr,Ti)O<Subscript>3</Subscript> thin films

Single-step sol–gel deposition was attempted for realizing submicron thick, (001) oriented Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films, using an alkoxide solution containing polyvinylpyrrolidone (PVP). A solution of molar composition, Pb(NO₃)₂:Zr(OC₃H₇ ⁿ)₄:Ti(OC₃H₇ ⁱ)₄:PVP:H₂O:CH₃COCH₂COCH₃:CH₃OC₂H₄OH:C₃H₇ ⁿOH = 1.1:0.53:0.47:0.5:5:0.5:22:0.98, was prepared as a coating solution. Gel films were prepared on Pt(111)/TiO₂/SiO₂/Si(100) substrates by spin-coating, and calcined at 350 °C and annealed at 650 °C either in an electric furnace or in a near-infrared (IR) furnace. When calcined in the near-IR furnace, the films became (001) oriented on annealing. When calcined in the electric furnace, on the other hand, the films became randomly oriented on annealing. These observations indicate that the heating the gel films from the substrate side in the calcination step at 350 °C induces crystallographic orientation in the annealing step at 650 °C. The effects of the heating methods on the thermal decomposition of the gel films, and the microstructure and dielectric properties of the fired films were studied. Finally 0.4 μm thick, (001) oriented PZT films could be successfully prepared by non-repetitive, single-step deposition. The oriented film thus obtained had the remnant polarization 2P _r of 39 μC/cm² and the dielectric constant ε′ of 960 ± 169.     

Epitaxial crystallization and oriented structure of linear low‐density polyethylene/isotactic polypropylene blends obtained via dynamic packing injection molding

In this work, as a part of a long‐term project aimed at controlling of crystal structure and phase morphology for a injection molded product, we investigated the oriented structure and possible epitaxial growth of polyolefin blend (low‐density polyethylene (LLDPE)/isotatic polypropylene (iPP)), achieved by dynamic packing injection molding, which introduced strong oscillatory shear on the gradually‐cooled melt during the packing process. The crystalline and oriented structures of the prepared blends with different compositions were estimated in detail through 2D X‐ray diffraction, calorimetry, and optical microscopy. As iPP was the dominant phase (its content was more than 50 wt%), our results indicated that it could be highly oriented in the blends. In such case, it was interesting to find that LLDPE epitaxially crystallized on the oriented iPP through a crystallographic matching between (100)_LLDPE and (010)_iPP, resulting in an inclination of LLDPE chains, about 50° to the iPP chain axis. On the other hand, as iPP was the minor phase, iPP was less oriented and no epitaxial growth between iPP and LLDPE was observed; even LLDPE remained oriented. The composition‐dependent epitaxial growth of LLDPE on oriented iPP could be understood as due to: (1) the effect of crystallization sequence, it was found that iPP always crystallized before LLDPE for all compositions; (2) the dependence of oriented iPP structure on the blend composition; (3) the “mutual nucleation” between LLDPE and iPP due to their partial miscibility. Copyright © 2009 John Wiley & Sons, Ltd.     

Chain-backbone motion in glassy polycarbonate studied by polarized infrared spectroscopy

Chain-backbone motion in glassy polycarbonate has been investigated both under isothermal stress, and also under zero stress during isothermal annealing of freely contracting film specimens. In both types of experiment, backbone motion was detected by measuring the change in infrared dichroism. The dichroism of absorption bands at 1364 and 2971 cm^?1, which have transition moment vectors directly related to the chain-backbone orientation, was studied. Under tensile stress in the homogeneous region of deformation, changes of up to 2.2° in the mean chain-backbone orientation angle were measured at 23°C. With the onset of cold drawing a total orientation change of some 8° was observed. For the isothermal annealing experiments, a film specimen holder employing conductive heating with radiative losses was employed. It enables infrared measurements to be made while the temperature of the contracting specimen is maintained constant to ± 0.5°C. Oriented specimens were prepared by isothermal stretching of polycarbonate films to strains of the order of 100%. Changes in the mean chain-backbone orientation angle were observed during annealing of these oriented films at temperatures between 80°C and the glass transition (149°C). Chain motion proceeded during annealing, and chain segments were observed to move cooperatively. The temperature at which the polymer is prestretched has a pronounced effect on its subsequent relaxation during annealing: when the sample was stretched at 23°C. motions were detected during annealing at temperatures as low as 81°C, while, if it was stretched at 154°C, no motion was detected at annealing temperatures below 127°C. The data are discussed in comparison with theories of the glassy state that predict the absence of chain-backbone motion at temperatures significantly below the glass transition. A shift in frequency of the ν_a (CH₃) absorption peak in stretched polycarbonate was measured by using polarized radiation. The effect was interpreted in terms of changes in the intermolecular bonding structure of the oriented polymer.     

Growth and characterization of (K<Subscript>0.5</Subscript> Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> thin films by a sol–gel method

(K_0.5 Na_0.5)NbO₃ (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO₂/Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.     

Oriented SrFe12O19 thin films prepared by chemical solution deposition

Thin films of SrFe₁₂O₁₉ (SrM) were prepared from a solution of iron and strontium alkoxides through the chemical solution deposition method on both amorphous (glassy SiO₂), and single crystal substrates (Si(100), Si(111), Ag(111), Al₂O₃(001), MgO(111), MgAl₂O₄(111), SrTiO₃(111)) substrates. The process of crystallization was investigated by means of powder diffraction, atomic force microscopy and scanning electron microscopy. Magnetization measurements, ferromagnetic and nuclear magnetic resonance were used for evaluation of anisotropy in the films. Whilst amorphous substrates enabled growth of randomly oriented SrM phase, use of single crystal substrates resulted in samples with different degree of oriented growth. The most pronounced oriented growth was observed on SrTiO₃(111). A detailed inspection revealed that growth of SrM phase starts through the breakup of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. A continuous film with epitaxial relations to the substrate was produced by repeating recoating and annealing.     

Preparation of CuAlO<Subscript>2</Subscript> thin films with high transparency and low resistivity using sol–gel method

CuAlO₂ thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO₂ films were investigated, so as to obtain CuAlO₂ films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl₂O₄ appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO₂ were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO₂ film is 79% at 780 nm and the direct optical band gap is 3.43 eV.     

Adsorption of triallylamine on Si(111) and its coadsorption with triethylgallium – A combined HREELS and XPS study

The adsorption of triallylamine [(C₃H₅)₃N; TAA] on Si(111)-(7 × 7) under UHV conditions was studied by means of surface sensitive electron spectroscopy. The High-Resolution Electron Energy Loss Spectroscopy (HREELS) yields the spectrum of vibration modes of the adsorbed species. X-ray Photoelectron Spectroscopy (XPS) gives insight into the chemical environment and the relative concentrations in the near surface region. The tertiary amine TAA physisorbes at room temperature without dissociation. Successive annealing steps induce the dissociation of the physisorbed phase at temperatures above 400°C. Further annealing leads to partial desorption of the allyl groups from the surface. At temperatures above 600°C the remaining allyl groups are fully dissociated. Hydrogen leaves the surface and nitrogen and carbon start to diffuse into the substrate. The surface chemistry of triallylamine adsorbed on a heated substrate behaves in a very similar way. The coadsorption of TAA with triethylgallium [(C₂H₅)₃Ga; TEG] in the temperature range between 500 and 800°C induces no significant change of the surface reactions. Only a small amount of gallium could be detected at the surface. The nucleation of GaN has not been observed, neither on Si(111) nor on Al₂O₃(0001) substrates.     

Interfacial adhesion mechanisms in incompatible semicrystalline polymer systems

The mechanism of adhesion at semicrystalline polymer interfaces between isotactic polypropylene (iPP) and linear low‐density polyethylene (PE) was studied with transmission electron microscopy (TEM) and an asymmetric‐double‐cantilever‐beam test. From the TEM images, both the interfacial width and the lamellar thickness of the polymers were extracted. During annealing, the interfacial width increased with the annealing temperature, and this indicated the accumulation of amorphous polymers at the interface. The interfacial strength, determined from the critical fracture energy (G_c), also increased with the annealing temperature and reached a maximum above the melting temperatures of iPP and PE, whereas the smallest G_c value was obtained below the melting temperatures of the two materials. A mechanism of interfacial strengthening was proposed accounting for the competition between the interdiffusion of PE and crystallization of iPP. As the annealing temperature increased, the rates of PE diffusion and iPP crystallization increased. Although the crystallization of iPP hindered the interdiffusion of PE, both the interfacial width and the fracture energy increased with the temperature, and this indicated that PE interdiffusion dominated iPP crystallization. Below the critical temperature, the fracture surfaces of both iPP and PE were smooth, and chain pullout dominated the fracture mechanism. Above the critical temperature, iPP crystallization still hindered the interdiffusion, and crazes could be seen on the iPP side. Above the melting temperatures of the two materials, ruptured surfaces could also be seen on the PE side, and crazing was the fracture mechanism. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2667–2679, 2004     

TEM Investigations of Spinel-forming Solid State Reactions: Mechanism,film orientation,and interface structure during MgAl2O4 formation on MgO (001) and Al2O3 (1 1.2) single crystal substrates

The formation of well-oriented MgAl₂O₄ spinel films by solid state reactions between (i) a MgO (001) substrate and an Al₂O₃ vapour and (ii) a sapphire (1 1 .2) substrate and a deposited solid MgO film, respectively, is experimentally investigated. Composition, structure and morphology of the films are characterized by XRD, SEM, TEM/SAED, and EDX. The reaction fronts involved are investigated by cross-sectional atomic resolution transmission electron microscopy (ARM). The direction of the overall diffusion flux and the kind of diffusing species are determined in experiments using inert markers of sub-micron size. There are common features and, however, distinct differences between cases (i) and (ii). On MgO (001) substrates, the MgAl₂O₄ films grow in a simple cube-to-cube orientation: MgAl₂O₄(001) ∥ MgO(001); MgAl₂O₄[100] ∥ MgO [100]. The films consist of small grains about 25 to 50 nm in diameter, the orientation of which is symmetrically distributed around the exact orientation, with maximum deviations of about ±2°. On sapphire (1 1 .2) substrates the MgAl₂O₄ films grow almost in the orientation MgAl₂O₄(001) ∥ Al₂O₃(1 1 .2); MgAl₂O₄[010] ∥ Al₂O₃[11.0]. These films consist of larger grains about 100 nm in diameter, the orientation of which systematically deviates from the above orientation by unidirectional rotations up to 5 to 6° around the substrate [11.0] axis. The structures of the reaction fronts show corresponding differences, which are discussed in terms of different mechanisms occurring at the initial stage of the spinelforming reaction because of the different crystallographic conditions at the beginning of the reactions.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Specificity and versatility of nucleating agents toward isotactic polypropylene crystal phases

Nucleating agents with an ≈6.5 Å lattice parameter induced the α phase of isotactic polypropylene (iPP, α‐iPP). A 6.5 Å periodicity is also involved in the nucleating agents for the β phase of iPP (β‐iPP). The similarity in substrate periodicities suggests that some nucleating agents may induce either the α or β phase under different crystallization conditions. 4‐Fluorobenzoic acid, dicyclohexylterephthalamide, and γ‐quinacridone (the latter two are known as β‐iPP nucleators) were tested over a wide range of crystallization temperatures [up to crystallization temperature (T_c) > 145 °C]. The two former nucleating agents induce exclusively α‐iPP and β‐iPP, respectively. γ‐Quinacridone on the contrary is a versatile agent with respect to the crystal phase generated. More specifically, the same crystal face of γ‐quinacridone induces either β‐iPP or α‐iPP when T_c is below or above ≈140 °C. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2504–2515, 2002     

降温速率对高密度聚乙烯在全同立构聚丙烯上附生结晶的影响

用欠焦电子显微术和电子衍射技术研究了降温速率对高密度聚乙烯（ＨＤＰＥ）在全同立构聚丙烯（ｉＰＰ）上附生结晶的影响．ＨＤＰＥ在高取向ｉＰＰ基质膜上的附生生长仅发生在ＨＤＰＥ与ｉＰＰ的直接接触面上，存在一临界附生层厚度，超出这一厚度的ＨＤＰＥ与ｉＰＰ无取向附生关系．降温速率不影响附生层内的ＨＤＰＥ与ｉＰＰ的附生结构关系，但对ｉＰＰ基质膜上附生生长的ＨＤＰＥ的厚度，即ＨＤＰＥ的临界附生层厚度有明显影响．在缓慢降温（０．５℃／ｍｉｎ）条件下，ＨＤＰＥ在ｉＰＰ上的附生层厚度约为１００ｎｍ．而室温空气降温条件下，ＨＤＰＥ在ｉＰＰ上的附生层厚度则为２５０ｎｍ．     

Crystallization of textured PbTiO3 films deposited from gels

Sol-gel processed PbTiO₃ thin films have been deposited by spin coating onto different subtrates; Si[111], Si/Al, Si/SiO₂/Cr/Pt, MgO[100], SrTiO₃[100] and sapphire. Interactions between the substrate and PbTiO₃ films after heat treatment have been studied by X-ray diffraction and Rutherford Back Scattering. When deposited onto sapphire and Si[111], PbTiO₃ films exhibit a preferred orientation with (101) perpendicular to the substrate. These films become oriented along (100) onto MgO and (001) onto SrTiO₃[100] substrates. A strong channelling effect is observed by the RBS technique when the film is oriented along the c axis on SrTiO₃[100] suggesting that these films are epitaxially grown. The diffusion of metal atoms during the thermal treatment gives rise to the formation of lead silicate on Si[111] substrates. As a result a pyrochlore phase is formed. Lead titanate films on Si/SiO₂/Cr/Pt and Si/Al substrates are polycrystalline and do not exhibit any texture.     

Über die thermische Umlagerung Aufgedampfter Kupferphthalocyanin-Schichten

The transformation of vapour-deposited α-CuPc films into the β-phase, occuring when the films are heat-treated, is investigated by means of IR spectroscopy. X-ray diffraction and electron microscopy. The absorbance at 783 cm^?1 provids us an useful measure for the degree of transformation, whereas in some cases results of the X-ray diffraction where not unequivocal. The transformation starts between 185 und 216°C, depending on the temperature of the substrate during the preparation of the films. Films deposited onto substrates below ?35°C proved to be amorphous. They can be crystallized at temperatures below the α-β-transformation point.     

Nanostructural properties of zinc oxide thin films grown on non‐planar substrates

The crystallographic structure of zinc oxide thin films grown on optical fibres using single source chemical vapour deposition (SSCVD) was analysed using near edge X‐ray absorption fine structure (NEXAFS). Zinc diethyl carbamate was used as a precursor for the growth of highly conformal films in a one‐step deposition process without substrate rotation and at substrate temperatures of 400–575 °C. It was found that the growth temperatures greatly affected the crystallographic structure of the film with no preferred crystallographic orientation and negligible crystallinity at low temperatures and very high crystallinity with pure c‐axis orientation at high temperatures. Cross‐sectional analysis of the films by scanning electron microscopy (SEM) showed the presence of a film at all points around the fibre. These films generally consisted of densely packed columns that bore a strong resemblance to c‐axis‐oriented films grown on planar substrates. Copyright © 2005 John Wiley & Sons, Ltd.