Band gap opening and optical absorption enhancement in graphene using ZnO nanocluster

Electronic, optical and transport properties of the graphene/ZnO heterostructure have been explored using first-principles density functional theory. The results show that Zn₁₂O₁₂ can open a band gap of 14.5 meV in graphene, increase its optical absorption by 1.67 times covering the visible spectrum which extends to the infra-red (IR) range, and exhibits a slight non-linear I–V characteristic depending on the applied bias. These findings envisage that a graphene/Zn₁₂O₁₂ heterostructure can be appropriate for energy harvesting, photodetection, and photochemical devices.     

Robust Type-II Band Alignment and Stacking-Controlling Second Harmonic Generation in GaN/ZnO vdW Heterostructure

Most traditional 2D materials have small bandgaps, resulting in low laser damage thresholds and limiting their applications in the ultraviolet region. Recently experimentally synthesized 2D GaN and ZnO can be such candidates due to their wide bandgaps, high charge mobilities, and optical transparency. Here, the van der Waals heterostructure GaN/ZnO is predicted that can exhibit both wide bandgap and strong second harmonic generation (SHG) response by compelling simulations. The results show the heterostructure always exhibits type-II band alignment under all probable stacking configurations. The out-of-plane SHG coefficients are up to 90 pm V⁻¹ at 400 nm, comparable to those of MoS₂ and MoSe₂ and higher than most 3D crystals. Interestingly, the positions are enhanced with localized, symmetric, and stacking-dependent features in the Brillouin zone. This peculiar momentum space behavior is originated from the relative strength of two distinct mechanisms contributing to the second-order nonlinear optical (NLO) response, that is, a purely interband transition part and a mixed interband-intraband contribution. Thus, this study proposes that GaN/ZnO heterostructure may be an efficient and high laser damage thresholds (LDTs) NLO material and an interesting platform for studying NLO optical properties.     

Computational screening of vdWs heterostructures of BSe with MoSe2 and WSe2 as sustainable hydrogen production materials

Recently, fabricating type-II vertical van der Waals (vdWs) heterostructure is a promising material for hydrogen production. The absorption capability, charge density distributions, band alignments and electronic properties of the monolayers and heterostructures are systematically investigated using computational studies. Using ab initio molecular dynamics, binding energy and phonon calculations, the stability of the heterostructures are verified. Both heterostructures are type-II materials, which can increase the separation of charge carriers. Moreover, the charge density difference and the potential drop across the interface of MSe₂/BSe creates a high built-in electric field that can prevent the recombination of charge carriers. We found that the visible-light optical properties of both heterostructures are much enhanced with suitable bandgap energy for water splitting. The band alignment suggests that the heterostructures straddle water redox potentials in acid solutions (0 < pH < 7). Our study predicted that MSe₂/BSe vdW heterostructures have great potential for photocatalytic hydrogen production.     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.     

Tunable electronic and optical properties of SnC/BAs heterostructure by external electric field and vertical strain

Based on the first-principles method, we investigate the electronic structure of SnC/BAs van der Waals (vdW) heterostructure and find that it has an intrinsic type-II band alignment with a direct band gap of 0.22 eV, which favors the separation of photogenerated electron–hole pairs. The band gap can be effectively modulated by applying vertical strain and external electric field, displaying a large alteration of band gap via the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the SnC/BAs heterostructure could present an excellent light-harvesting performance. Our designed heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics and optical properties.     

van der Waals PtO2/MoS2 heterostructure verified from first principles

First-principles calculations are used to study the structure and optoelectronic properties of a van der Waals (vdW) heterostructure formed by transition metal dichalcogenide and dioxide monolayers, namely PtO₂/MoS₂. The calculations suggest that a two-dimensional PtO₂ monolayer can be produced by exfoliation from the layered bulk α-PtO₂ and may even survive at high temperature. The PtO₂ monolayer is very closely matched with MoS₂ to form the vdW heterostructure. With its valence-band maximum and conduction-band minimum separated in different layers, this PtO₂/MoS₂ heterostructure is proposed as a type-II heterostructure with strong adsorption of visible light. Consequently, it may be widely applicable in photocatalysis and photovoltaics.     

Increased open‐circuit voltage of ZnO nanowire/PbS quantum dot bulk heterojunction solar cells with solution‐deposited Mg(OH)2 interlayer

An ultrathin Mg(OH)₂ layer was solution‐deposited onto the ZnO nanowires to solve the problem of interfacial charge recombination, caused by the increase of interfacial area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This Mg(OH)₂ interlayer efficiently passivated the surface defects of ZnO nanowires and provided tunnel barrier at ZnO/PbS interface. As a result, the charge recombination at ZnO/PbS interface was largely suppressed, proved by the significantly elongated electron lifetime and the increased open‐circuit voltage of the Mg(OH)₂‐involved BHJ CQDSCs. Careful thickness optimization of Mg(OH)₂ interlayer finally brought a ～33% increase in V_oc and ～25% improvement in power conversion efficiency.     

Electronic and optical properties of van der Waals vertical heterostructures based on two-dimensional transition metal dichalcogenides: First-principles calculations

Four vertical heterostructures based on two-dimensional transition-metal dichalcogenides (TMDs) – MoS₂/GeC, MoSe₂/GeC, WS₂/GeC, and WSe₂/GeC, were studied by density functional theory calculations to investigate their structure, electronic characteristics, principle of photogenerated electron–hole separation, and optical-absorption capability. The optimized heterostructures were formed by van der Waals (vdW) forces and without covalent bonding. Their most stable geometric configurations and band structures display type-II band alignment, which allows them to spontaneously separate photogenerated electrons and holes. The charge difference and built-in electric field across the interface of these vdW heterostructures also contribute to preventing the photogenerated electron–hole recombination. Finally, the high optical absorption of the four TMD-based vdW heterostructures in the visible and near-infrared regions indicates their suitability for photocatalytic, photovoltaic, and optical devices.     

Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution

In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO₂/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO₂/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300–400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO₂/n-Si heterostructure were investigated. ZnO:In/SiO₂/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current–voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained. PACS 73.40.Lq; 85.35.Be; 81.16.Dn     

ZnO/cubic (Mg,Zn)O radial nanowire heterostructures

The formation and properties of radial heteroepitaxial ZnO/(Mg,Zn)O nanowires is reported in which the (Mg,Zn)O is cubic. Synthesis is achieved via a catalyst-driven molecular beam epitaxy technique. The nanowires were grown on Ag-coated Si substrates at growth temperatures ranging from T_g=300 to 500 °C, using Zn, Mg, and O₃/O₂ as the reactive flux. Structural and compositional analyses indicate that the core of the nanowire is ZnO possessing the hexagonal wurtzite structure, with the (Mg,Zn)O sheath assuming the cubic rock salt structure. Since (Mg,Zn)O has a larger band-gap energy (up to 7.8 eV) than that of ZnO (3.37 eV), these radial heterostructure nanorods provide an interesting system for quantum confinement and one-dimensional nanoscale device studies. PACS 81.05.Dz; 81.07.Vb     

第一性原理的广义梯度近似+U方法的纤锌矿Zn1-xMgxO极化特性与Zn0.75Mg0.25O/ZnO 界面能带偏差研究

在纤锌矿结构Zn_1-xMg_xO/ZnO异质结构中发现了高迁移率的二维电子气(2DEG), 2DEG 的产生很可能是由于界面上存在不连续极化, 而且2DEG通常也被认为是由极化电荷产生的结果. 为了探索2DEG的形成机理及其产生的根源, 研究Zn_1-xMg_xO合金的极化特性与ZnO/Zn_1-xMg_xO超晶格的能带排列是非常必要的. 基于第一性原理广义梯度近似+U方法研究了Zn_1-xMg_xO合金的自发极化随Mg组分x的变化关系, 其中极化特性的计算采用Berry-phase方法. 由于ZnO与Zn_1-xMg_xO 面内晶格参数大小相当, ZnO 与Zn_1-xMg_xO 的界面匹配度优良, 所以ZnO/Zn_1-xMg_xO 超晶格模型较容易建立. 计算了Mg_0.25Zn_0.75O/ZnO超晶格静电势的面内平均及其沿着Z(0001)方向上的宏观平均. (5+3)Mg_0.25Zn_0.75O/ZnO超晶格拥有较大的尺寸, 确保远离界面的Mg_0.25Zn_0.75O与ZnO区域与块体计算情况一致. 除此之外, 基于宏观平均为能量参考, 计算得到Mg_0.25Zn_0.75O/ZnO超晶格界面处价带偏差为0.26 eV, 并且导带偏差与价带偏差的比值处于合理区间, 这与近来实验上报道的结果相符. 除了ZnO在[0001]方向上产生自发极化外, 由于在ZnO中引入Mg杂质会产生应变应力, 导致Mg_xZn_1-xO层产生额外的极化值. 这样必然会在Mg_0.25Zn_0.75O/Zn界面处产生非连续极化现象, 促使单极性电荷在界面处积累, 从而在Mg_0.25Zn_0.75O/Zn超晶格中产生内在电场. 此外, 计算了Mg_0.25Zn_0.75O/ZnO超晶格的能带排列, 由于价带偏差Δ E_V=0.26 eV与导带偏差ΔE_C=0.33 eV, 表明能带遵循I型排列. Mg_0.25Zn_0.75O/ZnO 的这种能带排列方式足以让电子与空穴在势阱中产生禁闭作用. 2DEG在电子学与光电子学领域都有重要应用, 本文的研究结果将对Mg_0.25Zn_0.75O/ZnO 界面2DEG的设计与优化中起到重要作用, 并且可以作为研究其他Mg组分的Mg_xZn_1-xO/ZnO超晶格界面电子气特性的参考依据.     

二维GaTe/Bi2Se3异质结：一类有潜力的Z型光解水催化剂

本文基于第一性原理方法，计算了二维GaTe/Bi₂Se₃异质结的电子结构、界面电荷转移、静电势分布、吸收光谱及光催化性质. 计算结果表明异质结是一个小能隙的准直接半导体，能有效捕获太阳光. 由于相对较强的界面內建极化电场和带边轻微弯曲，导致异质结中的光生电子和空穴分别有效分离在GaTe单层和Bi₂Se₃薄片上，可用于析氢和产氧. 这些理论计算结果意味着二维GaTe/Bi₂Se₃异质结是一类有潜力的Z型太阳能全解水催化剂.     

Influence of Mg content on optical properties of exciton confinement in wurtzite ZnO/MgxZn1−xO coupled quantum dots

Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/Mg_xZn_1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the structural parameters (the dot height, the barrier thickness between the coupled wurtzite ZnO QDs and Mg content x in the barrier layers) is calculated in detail. The results elucidate that Mg content have a significant influence on the exciton state and optical properties of ZnO coupled QDs. When Mg content x increases, the strong built-in electric field increases and leads to the redshift of the effective band gap of the Mg_xZn_1−xO layer. These theoretical results are useful for design and application of some important photoelectronic devices constructed by using ZnO strained QDs.     

ZnO(0001)表面吸附B的电子结构和光学性质研究

采用基于密度泛函理论的总体能量平面波超软赝势方法,结合广义梯度近似,对清洁ZnO(0001)表面及B/ZnO(0001)吸附体系进行了几何结构优化,计算了B/ZnO(0001)吸附体系的吸附能、能带结构、电子态密度和光学性质.计算结果表明:B在ZnO(0001)表面最稳定的吸附位置是T₄位.吸附后B/ZnO(0001)吸附体系表面带隙有所减小,表面态的组成发生变化,n型导电特性有一定程度的减弱,同时,对紫外光的吸收能力显著增强. 关键词： ZnO(0001)表面 B吸附 电子结构 光学性质     

Flame-Retarding and Mechanical Properties of Flexible Polyvinyl Chloride with Surface-Treated Lamellar Magnesium Hydroxide

The effects of hydrophobic magnesium hydroxide (Mg(OH)₂) particles, prepared by a surface modification method with oleic acid, on the flame-retarding and mechanical properties of polyvinyl chloride (PVC) were investigated. Comparison between the use of modified and unmodified Mg(OH)₂ in the preparation of PVC composites showed that the former could provide excellent optical and flame-retarding properties. The dispersion of the modified Mg(OH)₂ particles in the PVC matrix was investigated through scanning electron microscopy. Compared with a composite containing unmodified Mg(OH)₂, the rheological and impact strength properties of that containing the modified Mg(OH)₂ filler were found to be significantly improved. These improvements were mostly attributed to the better dispersion of the modified Mg(OH)₂ particles and the strong adhesion between the filler and matrix.     

Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures

The structure and electronic properties of the WS₂/SiC van der Waals (vdW) heterostructures under the influence of normal strain and an external electric field have been investigated by the ab initio method. Our results reveal that the compressive strain has much influence on the band gap of the vdW heterostructures and the band gap monotonically increases from 1.330 to 1.629 eV. The results also imply that electrons are likely to transfer from WS₂ to SiC monolayer due to the deeper potential of SiC monolayer. Interestingly, by applying a vertical external electric field, the results present a parabola-like relationship between the band gap and the strength. As the E-field changes from to ?0.50 +0.20 V/Å, the band gap first increases from zero to a maximum of about 1.90 eV and then decreases to zero. The significant variations of band gap are owing to different states of W, S, Si, and C atoms in conduction band and valence band. The predicted electric field tunable band gap of the WS₂/SiC vdW heterostructures is very promising for its potential use in nanodevices.     

First principles study of the electronic properties and Schottky barrier in Cu2Si/C2N van der Waals heterostructures

Based on the first principles calculations, we have systematically investigated the electronic structures of Cu₂Si/C₂N van der Waals (vdW) heterostructures. We discovered that the electronic structures of Cu₂Si and C₂N monolayers are preserved in Cu₂Si/C₂N vdW heterostructures. There is a transition from the n-type Schottky contact to Ohmic contact when the interfacial distance decreases from 4.4 to 2.7 Å, which indicates that the Schottky barrier can be tuned effectively by the interfacial distance. Meanwhile, we find that the carrier concentration between the Cu₂Si and C₂N interfaces in the vdW heterostructures can be tuned. These findings suggest that the Cu₂Si/C₂N vdW heterostructure is a promising candidate for application in future nanoelectronics and optoelectronics devices.     

Characteristics and heterostructure of metal-doped TiO2/ZnO nanocatalysts

In this study, Ag or Al-doped TiO₂/ZnO heterostructure nanocatalysts were prepared using a sol-gel method for photocatalysis to evaluate the degradability. The photocatalytic behavior was evaluated by the degradation of methylene blue (MB) under ultraviolet (UV) light irradiation. Photocatalytic studies suggested that 1 mol% Ag-doped TiO₂/ZnO (TiO₂/ZnO = 0.75/0.25) heterostructure nanocatalysts showed higher photocatalytic activity, and that the degradation efficiency can reach 83% in 4 h, 14% higher than that for pure TiO₂. Finally, the photocatalysis mechanism for the Ag-doped TiO₂/ZnO heterostructure nanocatalysts is discussed.     

Structural,optical and photocatalytic properties of (Mg,Al)-codoped ZnO powders prepared by sol–gel method

Structural and optical properties of 1 at % Al-doped Zn_1−xMg_xO (x=0–8%) powders prepared by sol–gel method were systematically investigated by means of X-ray diffraction, scanning electron microscopy, ultraviolet–visible absorbance measurement, photoluminescence and Raman scattering spectra. All the powders retained the hexagonal wurtzite structure of ZnO. The band gap and near band emission energies determined from absorbance and photoluminescence spectra increased linearly with increasing Mg content, respectively, which implied that the Mg worked effectively on ZnO band gap engineering, irrespective of Al codoping. However, according to the PL and Raman scattering studies, for the sample of x=8%, the Al doping efficiency was decreased by higher Mg codoping. On the other hand, the effect of Mg codoping on photocatalytic degradation of methylene orange was explored experimentally. The substitution of Mg ions at Zn sites shifted the conduction band toward higher energies and then enhanced the photocatalytic activity, while the incorporation of interstitial Mg ions and decreased Al doping efficiency for higher Mg doping sample (x=8%) reduced the photocatalytic activity.     

Theoretical design of direct Z-scheme SnC/PtSe2 heterostructure with enhanced photocatalytic performance and tunable optoelectronic properties

Recently, direct Z-scheme heterostructures have attracted much attention because of their outstanding electronic properties and excellent photocatalytic performance. In this article, the electronic, optical and photocatalytic properties of SnC/PtSe₂ heterojunction are systematically explored via first-principles calculations. Evidence suggests that a Type-Ⅱ band alignment as well as an indirect bandgap of 1.35 eV can be observed in the SnC/PtSe₂ heterojunction. The combined influence of the built-in electric field from SnC to PtSe₂ and the band bending causes a Z-scheme carrier migration mechanism. At biaxial strains of −3%–5%, the band edge positions of the heterojunction are able to cross the redox potential of water. The light absorption coefficient of 4.21 × 10⁵ cm⁻¹ and the energy conversion efficiency of 42.32% demonstrate that the photon energy can be utilized by the heterostructure efficiently. Furthermore, the absorption coefficient in the visible range can be significantly increased under tensile strain. Hence, there are reasons to believe that SnC/PtSe₂ heterostructure has tremendous potential for application in the field of photocatalytic water decomposition.