Growth of InP nanostructures via reaction of indium droplets with phosphide ions: synthesis of InP quantum rods and InP-TiO2 composites

InP quantum rods were synthesized via the reaction of monodispersed colloidal indium droplets with phosphide ions. In(0) droplets, which do not act as a catalyst but rather a reactant, are completely consumed. The excess electrons that are produced in this reaction are most likely transferred to an oxide layer at the indium surface. For the synthesis of InP quantum rods with a narrow size distribution, a narrow size distribution of In(0) particles is also required because each indium droplet serves as a template to strictly limit the lateral growth of individual InP nanocrystals. Free-standing quantum rods, 60, 120, or 150 A in diameter, with aspect ratios of 1.6-3.5, and without the residual metallic catalyst at the rod tip, were synthesized from the diluted transparent solution of metallic indium particles. The same approach was used to synthesize InAs quantum rods. A photoactive InP-TiO(2) composite was also prepared by the same chemical procedure; InP nanocrystals grow as well-defined spherical or slightly elongated shapes on the TiO(2) surface.     

Chemical stability of (NH4)2S-passivated InP(001) surfaces – investigations by XPS and XPD

UV/ozone supported surface oxidation of wet chemically cleaned and sulfurized InP(001) was investigated using XPS in order to study the chemical stability of (NH₄)₂S-passivated surfaces. Sulfur coverages of about one monolayer thickness were not sufficient to completely passivate the InP surface against oxidation. Similar oxides of the substrate components were observed at the surfaces. Evidence for surface passivation was found in the chemical stability of incorporated sulfur (In-S bonds), the lower growth rate of the oxide layer and its reduced thickness at comparably large UV/ozone exposures. The oxide layer was found to be amorphous at all stages of the oxidation process, as was proved by X-ray photoelectron diffraction.     

Growth and formation of hybrid structures on InP by alternated anodizations in aqueous media and liquid ammonia

Results about electrochemical anodic passivation of indium phosphide formed sequentially in two electrolytes with contrasted properties are reported for the first time. Using a galvanostatic method, oxidation of the InP surface has been formed initially at pH 9 with a current density of 0.2 mA cm⁻², while the anodization was achieved under illumination in liquid ammonia by cyclic voltammetry. Capacitance–voltage measurements in aqueous media coupled with cyclic voltammetry in liquid ammonia indicate the covering level of the two kinds of anodic layers, whereas XPS analysis gives access to chemical composition of hybrid structures. As a first result, the different measurements reveal the great stability of anodic oxide in liquid ammonia, at each step of oxide coverage. As a second result, the formation of a mixed layer with both oxide and “P–N” terminations has been evidenced by XPS. A new route of InP passivation was clearly established by this alternated anodization process.     

Electron beam induced reactions of oxygen on the InP(110) surface

An electron beam bombardment of the InP(110) cleaved surface causes a decomposition, an oxidation and a carbon contamination of the irradiated area even in ultrahigh vacuum conditions. The formation of phosphorus oxide is obvious from visual inspection of the P LMM Auger spectra. The indium MNN Auger line shape is rather insensitive to the chemical environment, hence, the determination of the indium bonding state is more difficult. We show the pattern recognition evaluating methods are able to distinguish mettalic indium form from indium bonded to phosphorus and indium bonded to oxygen.     

Halide–Amine Co‐Passivated Indium Phosphide Colloidal Quantum Dots in Tetrahedral Shape

Wet chemical synthesis of covalent III‐V colloidal quantum dots (CQDs) has been challenging because of uncontrolled surfaces and a poor understanding of surface–ligand interactions. We report a simple acid‐free approach to synthesize highly crystalline indium phosphide CQDs in the unique tetrahedral shape by using tris(dimethylamino) phosphine and indium trichloride as the phosphorus and indium precursors, dissolved in oleylamine. Our chemical analyses indicate that both the oleylamine and chloride ligands participate in the stabilization of tetrahedral‐shaped InP CQDs covered with cation‐rich (111) facets. Based on density functional theory calculations, we propose that fractional dangling electrons of the In‐rich (111) surface could be completely passivated by three halide and one primary amine ligands per the (2×2) surface unit, satisfying the 8‐electron rule. This halide–amine co‐passivation strategy will benefit the synthesis of stable III‐V CQDs with controlled surfaces.     

Thermal behavior of nitrided TiO2/In2O3 by TG–DSC–MS combined with PulseTA

TiO₂/InN (In/(Ti + In) = 6.5:100 mol) was prepared by nitridation of TiO₂/In₂O₃ by NH₃ at 580 °C for 8 h. Only the anatase TiO₂ phase was detected in the XRD measurements. The highly dispersed InN clusters on the surface of anatase TiO₂ nanocrystals were beyond the detection limit of XRD. In order to confirm the existence of InN in the products of nitridation, thermogravimetry–differential scanning calorimetry–mass spectrometry (TG–DSC–MS) coupling techniques were used for a simultaneous characterizing study of the changes of mass, enthalpy and determination of the evolved gases during the thermal decomposition of the InN and the nitrided TiO₂/In₂O₃ samples. Moreover, pulse thermal analysis (PulseTA) was combined with TG–DSC–MS for the quantitative calibration of the evolved nitrogen formed during the thermal decomposition of the InN and the nitrided TiO₂/In₂O₃. The applied technique enabled identification and quantification of the InN in the products of the nitridation of TiO₂/In₂O_3.     

Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature

A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 degrees C by choosing NaNH(2) and In(2)S(3) as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.     

Charge separation in heterostructures of InP nanocrystals with metal particles

The optical and electron paramagnetic resonance (EPR) properties of InP nanocrystals, in which metallic gold or indium is present as an incorporated part of the nanocrystals, have been studied. A study of Au/InP quantum rods supports different carrier localization regimes compared to metal-free quantum rods, including the charge-separated state for which the electron and hole are located in different parts of the heterostructure. They also show that elongated semiconductors that grow on metallic catalysts have electronic properties that are different from those of pure semiconductor nanocrystals of the same shape. We have also developed a simple method for growing melted indium particles on the surface of colloidal spherical InP nanocrystals, and in these In/InP nanocrystals the emission is completely quenched while the absorption spectrum moves to red due to the strong mixing of the semiconductor and metal electronic states.     

Oxidation‐induced nanostructures on Cu{100}, Cu(Ag) and Ag/Cu{100} studied by photoelectron spectroscopy

Initial surface oxidation and nanoscale morphology on Cu{100}, Cu(Ag) and Ag/Cu{100} have been investigated in situ by X‐ray photoelectron spectroscopy (XPS), X‐ray induced Auger electron spectroscopy (XAES) and the inelastic electron background analysis as a function of oxygen exposure at 3.7 × 10^?2 and 213 mbar pressures at a surface temperature of 373 K. Relative Cu₂O concentrations have been quantified by analysis of the peak shape of the XAES Cu LMM transition. The surface morphology of Cu₂O islands and the Ag layer has been characterized by inelastic electron background analysis of XAES O KLL and Ag 3d transitions. Oxygen‐induced segregation of Cu, as well as the subsequent Cu₂O island formation on Cu(Ag) and Ag/Cu{100} surfaces, has been investigated quantitatively. Our results indicate that Ag has a clear inhibitive effect on the initial oxidation and Cu₂O island formation on Cu(Ag) and Ag/Cu{100} surfaces. The Cu₂O islands are also observed to remain highly strained on Ag/Cu{100} even at higher O₂ exposures. The results suggest that strained Cu₂O islands eventually penetrate through the buried Ag layer, and in conjunction with segregating Cu atoms enable the oxidation to proceed at a similar rate to or even faster than on the unalloyed Cu surface. Copyright © 2007 John Wiley & Sons, Ltd.     

Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems

The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar⁺ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO₂. The use of O₂ ⁺ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO₂/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO₂ deposition process, e.g. for surface passivation or MIS structures.     

Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

Summary Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e. g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depth profiles indicate that the films grown between RT and 500°C are stoichiometric TiC. Film/substrate interdiffusion is observed at 600°C substrate temperature and higher.     

Xanes studies of III-V semiconductor surface passivation

III-V semiconductor surfaces are known to be very reactive in air due to the presence of unsaturated dangling bonds (DBs). Native oxides are highly undesirable in many device applications. Remarkable progress has been made in recent years in the preparation of air-stable surfaces by wet chemical etching. XANES studies have shown that the stability of the passive surface is due to termination of surface DBs through the formation of an ordered overlayer selfassembled in chemical solutions. For a (100) InP surface, saturation of two adjacent DBs is achieved by the formation of In-S-In bridge bonds along the [011] direction. A refined analysis of σ-resonance indicates that XANES data are consistent with a recently proposed (2×2) InP(100)-S structure where the S is located on bridge sites to form twisted short and long dimers. For the GaAs(111) surface, the surface DBs are terminated by monovalent Ga-Cl bonds along the surface normal.     

XPS and XAES of polyethylenes aided by line shape analysis: The effect of electron irradiation

X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES) have been used to investigate different polyethylene surfaces, i.e. low density polyethylene (PELD), high density polyethylene (PEHD) and polyethylene of ultra high molecular weight (PEUHMW). The ratio of Csp²/sp³ was evaluated from (i) fitting of XPS C 1s spectra, (ii) the width of XAES C KLL spectra (parameter D) and (iii) line shape analysis by the pattern recognition (PR) method using the fuzzy k-nearest neighbors (fkNN) rule. The proposed approaches investigate: (i) the differences between various polyethylene surfaces, (ii) their surface changes and degradation due to electron irradiation under various doses and (iii) their stability under electron beam irradiation.The results of proposed approaches, i.e. C 1s fitting, C KLL width evaluation and PR line shape analysis applied to C 1s and C KLL transitions, are qualitatively consistent. The unirradiated polyethylenes indicate nearly Csp³ hybridizations. Under an electron dose a rapid decrease of Csp³ is observed, starting at a dose of 100 Cm⁻². The quantitative differences observed between results obtained from analyses using the C KLL and C 1s spectra, can be explained with a smaller average information depth of C KLL transition. However, quantitative discrepancies between results of various approaches using the same electron transition, i.e. C KLL or C 1s, are smaller. The surface degradation due to X-ray irradiation was negligible in comparison to electron beam irradiation. The PR method was efficient in identifying the polyethylene surfaces under various electron doses. The largest stability under an electron beam is exhibited by the PEUHMW.     

X‐ray photoelectron spectroscopy and the pattern recognition method—their application to surface studies in CoPd alloys

In the present work, polycrystalline CoPd alloys in varying range of bulk atomic percent composition (Co30Pd70, Co50Pd50 and Co70Pd30) are investigated by means of X‐ray photoelectron spectroscopy (XPS). The results of conventional XPS quantitative multiline (ML) approach are compared to the results obtained on the basis of XPS lines shape analysis, where the selected XPS or X‐ray induced Auger electron (XAES) transitions, are processed using the pattern recognition method known as the fuzzy k‐nearest neighbour (fkNN) rule. The fkNN rule is applied to the following spectra line shapes: Pd MNV, Co 2p, Co LMM, Pd 3d and valence band, analysing electrons in a varying range of selected kinetic energies. Both methods showed the surface segregation of Pd in Co30Pd70 and Co50Pd50 alloys. The results of the ML, the binding energy shift (ΔBE) analysis and the fkNN rule remained in agreement. Discrepancies in quantitative results obtained using different approaches are discussed within the accuracy of the applied methods, differences due to mean escape depth (MED) of electrons in considered transitions, their depth distribution function, the sensitivity of electron transition line shape on the environmental change (weaker effect for the inner shell transitions, and stronger effect for the outer shell transitions and Auger electron spectroscopy (AES) electrons transitions) and the non‐uniform depth profile concentrations. Copyright © 2005 John Wiley & Sons, Ltd.     

Nanometer-scale optical imaging of epitaxially grown GaN and InN islands using apertureless near-field microscopy

Nanometer-scale chemical imaging of epitaxially grown gallium nitride (GaN) and indium nitride (InN) islands is performed using scattering-type apertureless near-field scanning optical microscopy (ANSOM). The scattering of 633 nm laser radiation is modulated by an oscillating metallic probe, and the scattered radiation is detected by homodyne amplification, followed by high-harmonic demodulation, yielding optical near-field scattering maps with a spatial resolution better than 30 nm. The image contrast between InN and GaN, and the tip-sample distance dependence, can be qualitatively explained by a simple dipole-coupling model. The ANSOM images of InN and GaN also show structures that are absent in the topographic counterpart, and these substructures are explained by the variations of the local dielectric environment of InN and GaN.     

Adsorption of bromobenzene on periodically stepped and nonstepped NiO(100)

Periodically stepped NiO(100) surfaces were prepared and characterized with low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and temperature-programmed desorption (TPD). Two vicinal NiO(100) single-crystal samples were cut, oriented, and polished with regular, repeating monatomic steps in six-atom or seven-atom terrace widths. LEED diffraction patterns showed characteristic spot-splitting that corresponded to the appropriate terrace and step height. The nonstepped and stepped NiO(100) surfaces were exposed to bromobenzene at 130 K first to produce a molecularly adsorbed monolayer species and then, with increased exposure, a multilayer adsorbate. An additional adsorbate species, observed only on the stepped surfaces, was found to desorb at 145 K by two competing pathways. One pathway, which saturates at low coverages, leaves bromine behind on the substrate and results in dehalogenation. The other pathway yields molecular desorption at 145 K, but is only observed in detectable amounts after the dehalogenation pathway is saturated. On both stepped and nonstepped NiO(100) substrates, adsorbed bromine resulting from dehalogenation processes appears as nickel bromide, determined by the Br 3p XPS data.     

有机铟化合物的自组装现象

结合作者近两年来有机铟化合物自组装研究的一系列工作，综述了有机铟化合 物的自组装现象。有机铟化合物可以通过分子间的配位键和次级键连接而形成自组 装的二聚体或多聚体结构。其中一些有机铟化合物可以作为InN，InP，InAs的前体。     

Characterization of cathodic film formed during reduction of chromic acid: role of sulphuric acid concentration

The surface composition of chromium, electrodeposited from a chromic acid solution with different amounts of sulphuric acid, has been investigated by means of Auger Electron Spectroscopy (AES) and X‐ray Photoelectron Spectroscopy (XPS). The quantity of sulphuric acid is a critical parameter in order to form metallic chromium instead of a non‐reducible chromium (III) oxide layer. The intermediate cathodic film formed on the electrode before the metallic chromium deposition has been investigated and XPS measurements have shown that a chromium oxide film is formed whatever the sulphuric acid concentration. However, in the presence of sufficient amounts of sulphate, this oxide is dissolved or the layer is broken down, giving rise to a free steel surface where the reduction of chromate ions into metallic chromium can take place. Copyright © 2004 John Wiley & Sons, Ltd.     

Arsenopyrite and pyrite bioleaching: evidence from XPS, XRD and ICP techniques

In this work, a multi-technical bulk and surface analytical approach was used to investigate the bioleaching of a pyrite and arsenopyrite flotation concentrate with a mixed microflora mainly consisting of Acidithiobacillus ferrooxidans. X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and X-ray-induced Auger electron spectroscopy mineral surfaces investigations, along with inductively coupled plasma-atomic emission spectroscopy and carbon, hydrogen, nitrogen and sulphur determination (CHNS) analyses, were carried out prior and after bioleaching. The flotation concentrate was a mixture of pyrite (FeS₂) and arsenopyrite (FeAsS); after bioleaching, 95% of the initial content of pyrite and 85% of arsenopyrite were dissolved. The chemical state of the main elements (Fe, As and S) at the surface of the bioreactor feed particles and of the residue after bioleaching was investigated by X-ray photoelectron and X-ray excited Auger electron spectroscopy. After bioleaching, no signals of iron, arsenic and sulphur originating from pyrite and arsenopyrite were detected, confirming a strong oxidation and the dissolution of the particles. On the surfaces of the mineral residue particles, elemental sulphur as reaction intermediate of the leaching process and precipitated secondary phases (Fe–OOH and jarosite), together with adsorbed arsenates, was detected. Evidence of microbial cells adhesion at mineral surfaces was also produced: carbon and nitrogen were revealed by CHNS, and nitrogen was also detected on the bioleached surfaces by XPS. This was attributed to the deposition, on the mineral surfaces, of the remnants of a bio-film consisting of an extra-cellular polymer layer that had favoured the bacterial action.