Single layer gold islands at the interface between a self-assembled monolayer and the Au(111) substrate: A high-resolution STM study

Physical vapor deposition of gold onto a self-assembled monolayer (SAM) of octanethiol on Au(111) has been studied at the molecular level in ultra-high vacuum (UHV) using atomic-resolution scanning tunneling microscopy (STM). A specially prepared SAM with not only the usual etch pits but also co-existing phases and domain boundaries is used for the purpose of studying details of the nucleation process. Etch pits are found to be filled by deposited Au atoms. At the same time, preferential nucleation and growth of gold islands at intersections of different domains, as well as inside the domains of the less dense striped phase, is observed. We find no gold islands within the densely-packed (√3 × √3)R30° phase. High-resolution STM imaging shows that the SAM over the newly formed gold islands adopts the same structure as that in the immediate surroundings.     

Magnetic properties of Co films deposited onto obliquely sputtered Ta underlayers

Gold-capped Co films deposited on obliquely sputtered Ta underlayers have produced coercivities in excess of 400 Oe, and anisotropy fields of 800 Oe. The coercivity increases with Ta deposition angle and thickness. The coercivity and anisotropy can be increased further to values >600 and 900 Oe, respectively, by replacing the Au capping layer with Cu. Films with an obliquely deposited underlayer exhibit a reduced density and an increased interface roughness compared to normally deposited films. The trilayers fabricated in this study show promising results for use in giant magnetoresistance sensors.     

Medium energy ion scattering investigation of methylthiolate-induced modification of the Au(111) surface

100 keV H⁺ scattering has been used to investigate the structure of the methylthiolate/Au(111) interface in the Au(111)(√3 × √3)R30° phase. Adsorption of the thiolate onto the clean Au(111) surface leads to a large drop in the scattered ion yield due to the lifting of the clean surface ‘herring-bone’ reconstruction, but the thiolate-covered surface shows an ion yield higher than that of an unreconstructed Au(111) surface, providing direct evidence of a significant number of Au atoms that are displaced from their bulk-terminated positions at the buried interface. Simulations for two different Au adatoms models at the interface, namely, the Au-adatom-monothiolate (AAM) and Au-adatom-dithiolate (AAD) models, show significant sensitivity to the exact values of interlayer spacings and atomic vibrational amplitudes, but the comparison with experimental results appears to favour the AAD model with 0.17 ML Au adatoms in bridging sites at the interface.     

The interaction between vapor-deposited Al atoms and methylester-terminated self-assembled monolayers studied by time-of-flight secondary ion mass spectrometry,X-ray photoelectron spectroscopy and infrared reflectance spectroscopy

The deposition of 2 Å of Al metal onto a monolayer of methylester-terminated alkanethiolate (HS(CH₂)₁₅CO₂CH₃) self-assembled on polycrystalline Au(111) was studied using time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray photoelectron spectroscopy (XPS) and infrared reflectance spectroscopy (IRS). The deposited Al was found to be highly reactive with the oxygen atoms in the self-assembled monolayer terminal functional group. No reactivity between Al and the methylene backbone of the monolayer was observed, nor was any Al observed at the monolayer/Au interface. However, the deposition of Al does induce some chain disordering.     

Surface and interface effects on structural transformation of vapor-deposited ethylbenzene films

We have investigated how the structures of vapor-deposited glassy films change with increasing temperature by using time-of-flight secondary ion mass spectrometry and ion scattering spectroscopy. It is found that intermixing of the topmost layer of an ethylbenzene film occur at temperature (~ 80 K) considerably lower than the glass transition temperature (T_g = 118 K) when the film is deposited at 20 K. This phenomenon can be interpreted as the occurrence of a two-dimensional liquid that diffuses into pores of the film, which is evidenced from comparison with surface diffusivity measurements using a porous silicon layer. For nonporous films deposited at higher temperatures, the molecules intermix gradually prior to the abrupt film morphology change at T_g. This phenomenon can be interpreted as decoupling between translational diffusivity and viscosity in the bulk. The film thickness has no significant effects on the evolution of supercooled liquid at T_g except for the monolayer film, whereas crystallization is quenched for the films thinner than 8 monolayers. The roles of the 2D liquid on the surface and an immobilized layer formed at the interface are discussed in finite-size effects on the glass-liquid transition and crystallization.     

Passivation of Si(111) surfaces with electrochemically grafted thin organic films

Ultra thin organic films (about 5 nm thick) of nitrobenzene and 4-methoxydiphenylamine were deposited electrochemically on p-Si(111) surfaces from benzene diazonium compounds. Studies based on atomic force microscopy, infrared spectroscopic ellipsometry and x-ray photoelectron spectroscopy showed that upon exposure to atmospheric conditions the oxidation of the silicon interface proceed slower on organically modified surfaces than on unmodified hydrogen passivated p-Si(111) surfaces. Effects of HF treatment on the oxidized organic/Si interface and on the organic layer itself are discussed.     

Photopatterning of gold and copper surfaces by using self-assembled monolayers

A photolithographic technique was successfully employed to generate micropatterns of gold and copper by using self-assembled monolayer (SAMs) as resist materials. Copper patterns were successfully prepared from SAMs of 11-mercaptoundecanoic acid (MUA) and dodecanethiol (DDT) on Cu after UV irradiation followed by etching but gold patterns were prepared only from the SAM of MUA and not from the SAM of DDT, which revealed the difference of photooxidation of the metal–sulfur bond on SAMs. However, the maximum resolution of the pattern was about 1.0 μm on gold and 5.0 μm on copper. This may be due to lower quality packing of SAM on copper than gold. Ellipsometric and cyclovoltammetric observation of SAMs during the UV irradiation indicated the gradual removal of SAMs on copper and gold. Photopatterning of gold and copper by using SAM is more compatible with the current microelectronics process and is complementary to the microcontact printing technique.     

Interfacial structure of Co porphyrins on Au(111) electrode: Interaction of porphyrin molecules with substrate

Interfacial structures of cobalt(II) porphine (CoP) and [2,3,7,8,12,13,17,18‐octaethyl‐21H,23-H-porphine]cobalt(II) (CoOEP) have been studied on Au(111) electrode using electrochemical scanning tunneling microscopy (EC-STM), in-situ X-ray diffraction, and density functional theory (DFT) calculations. The adsorption of porphyrins affects the reconstruction of Au(111) surface. The adsorption of CoP causes a lifting of the reconstruction to a complete 1 × 1 structure of Au(111). On CoOEP modified Au(111), the unit cell periodicity of the reconstructed substrate structure expands compared with the √3 × 23 structure of bare Au(111). The same expanded substrate structure was observed on Au(111) modified with OEP without the coordinated Co ion; the coordinated metal ion of the adsorbed porphyrin molecule does not affect the substrate structure. This result indicates that the interaction of conjugated π electrons of porphyrin with the substrate is stronger than that of the coordinated Co ion. In-situ X-ray diffraction and DFT calculation support non-covalent interaction of porphyrins with the Au(111) surface.     

Two commensurate hydrogen-bonded monolayer structures of melamine on Ag(111)

Melamine (1,3,5-triazine-2,4,6-triamine) was deposited on the Ag(111) surface under ultrahigh vacuum conditions. It forms two different monolayer structures, which were investigated by low energy electron diffraction and scanning tunneling microscopy. The α-phase is a honeycomb structure containing two molecules per unit-cell. The molecular orientation within the unit-cell is determined by six hydrogen bonds. The α-phase is kinetically preferred upon deposition at room-temperature and can be transferred to the thermodynamically more stable β-phase by annealing at 333 K. The β-phase has an oblique unit-cell containing four molecules and shows a higher surface density with additional hydrogen bonds between adjacent amino groups. Both structures are commensurate. While the structural motif of the α-phase has been observed before on Au(111) and Ag–Si(111) surfaces, the structure of the β-phase has been so far only theoretically predicted.     

Face centered cubic cobalt layer on Au(1 1 1): a magneto-optical study

It has been recently shown that Co can grow epitaxially on an Au(1 1 1) layer with a face centered cubic (FCC) structure, the Co[1 1 1] and Au[1 1 1] axes being oriented along each other. First magneto-optical studies of the FCC Co film structure are reported here. The differences in magnetic behavior for FCC and HCP-type Co films as a function of the layer thickness are underlined and interpreted in the framework of a phenomenological model.     

Interaction of HNCO with Au(111) surfaces

The surface chemistry of isocyanic acid, HNCO, and its dissociation product, NCO, was studied on clean, O-dosed and Ar ion bombarded Au(111) surfaces. The techniques used are high resolution energy loss spectroscopy (HREELS) and temperature-programmed desorption (TPD). The structure of Ar ion etched surface is explored by scanning tunneling microscopy (STM). HNCO adsorbs molecularly on Au(111) surface at 100 K yielding strong losses at 1390, 2270 and 3230 cm^? 1. The weakly adsorbed HNCO desorbs in two peaks characterized by T_p = 130 and 145 K. The dissociation of the chemisorbed HNCO occurs at 150 K to give NCO species characterized by a vibration at 2185 cm^? 1. The dissociation process is facilitated by the presence of preadsorbed O and by defect sites on Au(111) produced by Ar ion bombardment. In the latter case the loss feature of NCO appeared at 2130 cm^? 1. Isocyanate on Au(111) surface was found to be more stable than on the single crystal surfaces of Pt-group metals. Results are compared with those obtained on supported Au catalysts.     

Interplay between ordered growth and intermixing of Pt on patterned Au surfaces

We have investigated the growth of submonolayer coverage of platinum on two gold surfaces (Au(1 1 1) and Au(7 8 8)), at temperatures ranging from 110 K to 300 K. The Scanning Tunneling Microscope images reveal a competition between the ordered growth of nanodots and a random intermixing between Pt and Au. The Pt deposition on the Au(1 1 1) surface at room temperature shows an ordered growth limited by the insertion of Pt atoms into the surface layer and the subsequent modifications of the herringbone surface pattern. In contrast, for Pt on the Au(7 8 8) stepped surface, perfect ordered growth is observed over a wide temperature range.     

Ga-induced restructuring of Si(5 5 12) − 2 × 1 reconstructed surface at room temperature

Motivated by the need to form 1D-nanostructured dopants on silicon surfaces, we have attempted to grow Ga on the high index Si(5 5 12) surface which has a highly trenched (1D) morphology. The evolution of the interface with Ga adsorption in the monolayer regime has been probed by in situ AES, LEED and EELS. Controlling the kinetics by changing the Ga flux rates shows an interesting difference in the 1.0 to 1.5 ML region. The low flux rate (0.03 ML/minute) results in a Frank van der Merwe (layer by layer) growth mode up to 2 ML, while the higher flux rate (0.1 ML/minute) shows a transient island formation after the completion of 1 ML. The low rate shows the formation of 2 × (3 3 7) and (2 2 5) superstructures, while only the 2 × (3 3 7) is observed in a wide coverage range for the higher rate. The results demonstrate the ability to kinetically control the surface phases with different electronic properties of this technologically important interface.     

In-situ XPS investigation of nitric oxide adsorption on (111), (310), and (533) gold single crystal faces

Decomposition of nitric oxide on the flat (111) and stepped (310) and (533) faces of gold single crystals was investigated by in-situ X-Ray Photoelectron Spectroscopy at elevated NO pressures up to 7 Pa and temperatures between 300 K and 500 K. The adsorbed layer formed on the gold surfaces at these conditions was found to contain nitrogen adsorbed atomically and/or nitrous oxide. The population of these adspecies was found to be dependent upon the crystal structure of the Au face, as well as the sample temperature and NO pressure. Explanations for these phenomena are discussed.     

Low energy alkali ion scattering investigation of Au nanoclusters grown on silicon oxide surfaces

The atomic and electronic structures of Au nanostructures grown by deposition onto various silicon oxide surfaces were probed with low energy alkali ion scattering. Charge state-resolved time-of-flight spectra of scattered 2 keV ³⁹K⁺ ions were collected from Au deposited onto an untreated Si wafer with a native oxide, a thermally grown oxide surface, and atomically-clean Si(111). It is shown that nanoclusters form on both oxides, but not on the clean Si. A quantitative analysis of the ion scattering spectra indicates that the nanoclusters are initially flat, two-dimensional structures that start to develop a second layer at about 0.5 Å of deposited Au and then form three-dimensional islands. The neutral fraction of scattered 2 keV ³⁹K⁺ ions decreases with deposition indicating changes in the quantum state occupancy with cluster size. The shapes of the clusters differ on the native and thermal oxides, leading to shape-dependent neutralization.     

Thermal stability of the Co/β-Si3N4/Si(111) interface: A photoemission study

The thermal stability of the Co/β-Si₃N₄/Si(111) interface has been studied by high-resolution photoemission spectroscopy in a temperature range extending from room temperature to 650 °C. It is demonstrated the ability of a very thin crystalline buffer layer of silicon nitride to prevent the interfacial reaction between cobalt and silicon at room temperature. The behaviour of the interface at higher temperature shows the formation of cobalt silicides already at 300 °C. Moreover, the presence of new components in the decomposition of the photoemission spectra is discussed in the light of the existing literature.     

In-situ observation of graphene growth on Ni(111)

Graphene growth of mono-, bi- and tri-layers on Ni(111) through surface segregation was observed in situ by low energy electron microscopy. The carbon segregation was controlled by adjusting substrate temperature from 1200 K to 1050 K. After the completion of the first layer at 1125 K, the second layer grew at the interface between the first-layer and the substrate at 1050 K. The third layer also started to grow at the same temperature, 1050 K. All the layers exhibited a 1 × 1 atomic structure. The edges of the first-layer islands were straight lines, reflecting the hexagonal atomic structure. On the other hand, the shapes of the second-layer islands were dendritic. The edges of the third-layer islands were again straight lines similar to those of the first-layer islands. The phenomena presumably originate from the changes of interfacial-bond strength of the graphene to Ni substrate depending on the graphene thickness. No nucleation site of graphene layers was directly observed. All the layers expanded out of the field of view and covered the surface. The number of nucleation sites is extremely small on Ni(111) surface. This finding might open the way to grow the high quality, single-domain graphene crystals.     

Atomic structure of two-dimensional binary surface alloys: Si(111)-√21 × √21 superstructure

The atomic structures of Au and Ag co-adsorption-induced √21 × √21 superstructure on a Si(111) surface, i.e., (Si(111)-√21 × √21-(Au, Ag)), where the Si(111)-5 × 2-Au surface is used as a substrate, have been investigated using reflection high-energy positron diffraction (RHEPD) and photoemission spectroscopy. From core-level spectra, we determined the chemical environments of Ag and Au atoms present in the Si(111)-√21 × √21-(Au, Ag) surface. From the rocking curve and pattern analyses of RHEPD, we found that the atomic coordinates of the Au and Ag atoms were approximately the same as those of the Au and Ag atoms in other Si(111)-√21 × √21 surfaces with different stoichiometries. On the basis of the core-level and RHEPD results, we revealed the atomic structure of the Si(111)-√21 × √21-(Au, Ag) surface.     

In-situ surface-sensitive X-ray diffraction study on the influence of iodide over the selective electrochemical etching of Cu3Au (111)

During selective etching (dealloying) surface-sensitive X-ray diffraction employing Synchrotron light has been used to in-situ monitor the potential-controlled formation of Au-rich films on the surface of Cu₃Au (111) in iodide-containing electrolytes. Similar to the case in pure sulfuric acid we observed a sequence of structural transformations starting from a well-prepared pristine surface to a porous film consisting of substrate-oriented Au ligaments. Also stacking-reversed ultrathin Au-rich films and Au islands form as intermediate steps but no passive-like behavior was observed in iodide-containing electrolytes, i.e. the surface quickly developed Au ligaments after reaching the Cu dissolution potential. At low overpotentials comparatively coarse Au islands point to a higher mobility of Au/electrolyte interfaces in iodide-containing solutions. At higher overpotentials and also with higher iodide concentrations an epitaxial Cu-iodide precipitate film showed an orientation relation of CuI (111) || CuAu (111) and two azimuthal domains of < ? 2, 2, 0 > || < ? 2, 2, 0 > and < ? 2, 2, 0 > || < 2, ? 2, 0>. This partially dissolution-inhibiting bulk CuI layer is observed to produce a bimodal pore size instead of usually obtained homogeneous porosity. The X-ray data and supporting ex-situ AFM and SEM images show marked differences in the morphology and connectivity of the forming nanoporous Au layer. Precipitation layers are thus suggested to provide means for controlling the nanoporosity for applications of dealloyed films and surfaces.     

Initial stages of Bi/Ge(111) interface formation: A detailed STM study

We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of the first/second layer correspondingly. Laterally isolated first layer Bi atoms, clusters and islands posses no electronic states in the range ~ 0.5 eV above the Fermi level of the substrate. In contrast, metallic electronic properties are found for continuous films when Bi coverage nears 1 ML. Annealing the as-deposited Bi films at 450 K causes lateral redistribution of Bi due to surface diffusion: coarsening of two-dimensional Bi islands with no long range order in the adsorbate layer is observed up to 1 ML; long range ordered (√3 × √3)-Bi/Ge(111) interface plus three-dimensional Bi clusters are obtained for coverages in excess of 1 ML.