Thermoelectric power of HfTe5 and ZrTe5

The thermoelectric power and the electrical resistance of the two low-dimensional conductors, HfTe₅ and ZrTe₅ have been measured over the temperature range of 7K to 380K. The thermoelectric power for both materials is large and positive at high temperatures and then drops precipitously and crosses zero at the temperature of the anomalous resistivity peak, T_p. At lower temperatures, the thermoelectric power reaches a large negative peak and then decreases to zero in a metallic fashion. The abrupt change in thermopower, which occurs at T_p for both materials, is indicative of a phase transition where the carrier type changes from hole-like to electron-like.     

Electronic transport and specific heat of 1T-V Se2

The low-temperature thermoelectric power and the specific heat of 1T-V Se₂ (vanadium diselenide) have been reported along with the electrical resistivity and Hall coefficient of the compound. The charge density wave (CDW) transition is observed near 110 K in all these properties. The thermoelectric power has been measured from 15 K to 300 K, spanning the incommensurate and commensurate CDW regions. We observed a weak anomaly at the CDW transition for the first time in the specific heat of V Se₂. The linear temperature dependence of the resistivity and thermoelectric power at higher temperatures suggests a normal metallic behavior and electron–phonon scattering above the CDW transition. The positive thermoelectric power and negative Hall coefficient along with strongly temperature-dependent behavior in the CDW phase suggest a mixed conduction related to the strongly hybridized s–p–d bands in this compound.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

Electron transport properties of amorphous Mg80.4Cu19.6 alloy

The Hall coefficient, thermoelectric power and electrical resistivity of the liquid quenched amorphous Mg_80.4Cu_19.6 alloy have been measured over a wide temperature range below room temperature. The 2k_F value deduced from the observed Hall coefficient agrees well with the free electron value. The thermoelectric power is positive and increases linearly with increasing temperature above approximately 180 K. The downward deviation is evident in the lower temperature range. This behaviour is in sharp contrast with the negative thermoelectric power observed in the amorphous Mg-Zn alloy. Nevertheless, the overall temperature variation of the electrical resistivity resembles the previously reported data of the amorphous Mg_72.5Zn_27.5 alloy in various aspects; (1) the room temperature resistivity value, (2) the negative TCR and its magnitude, (3) the appearance of a broad maximum at about 50 K and a minimum at about 10 K and (4) T²-dependence in the range of 10～30 K and $\text{-(T-T}{}_{\max }\text{)}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$-dependence in the range of 50～220 K. The results are discussed in connection with $\text{2k}{}_{\mathrm{F}}\text{K}{}_{\mathrm{P}}$ criterion and Mooij correlation.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

The thermoelectric power of MEM(TCNQ)2

MEM(TCNQ)₂ undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)₂ in the temperature range above 335 K. Above the transition the TEP is ?65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.     

烧结温度对La0.1Sr0.9TiO3陶瓷热电性能的影响

利用传统固相反应方法, 分别在1440℃, 1460℃, 1480℃和1500℃烧结条件下, 制备了钙钛矿结构的La_0.1Sr_0.9TiO₃陶瓷样品. 样品的粉末X射线衍射结果显示, 不同烧结温度的La_0.1Sr_0.9TiO₃ 陶瓷样品均为单相的正交结构. 从样品的扫描电子显微照片来看, 随着烧结温度的增加, 平均晶粒尺寸逐渐增大. 在室温至800℃的测试温区, 测试了样品的电阻率和Seebeck系数, 系统地研究了不同烧结温度对样品热电性能的影响. 结果表明, 样品的电阻率在测试温区内随着测试温度的升高先略微降低, 然后逐渐升高;总体来看, 样品的电阻率随烧结温度的升高先增大后降低. 在测试温区内, Seebeck系数均为负值, 表明样品的载流子为电子; 随着测试温度的升高, Seebeck系数绝对值均有所增大;随烧结温度升高, Seebeck系数绝对值逐渐增大后显著降低. 1480℃制备的样品因其相对较低的电阻率和相对较高的Seebeck系数绝对值, 在165℃时得到最大的功率因子21 μW·K^-2·cm^-1.     

Effect of pressure on the electrical resistivity and the thermoelectric power of EuPd2Si2

A continuous valence transition has been found in EuPd₂Si₂ from the measurement of the electrical resistivity and thermoelectric power upto 70 kbar.     

Resistivity and thermoelectric power of Bi2Sr2Ca−xPrxCu2Oy system

Samples of Bi₂Sr₂Ca_1−xPr_xCu₂O_y have been characterized by resistivity and thermoelectric power measurements. All metallic samples show superconductivity with a maximum T_c = 90 K at X = 0.2. The sample of x = 0.6 shows a crossover from hopping conduction at low temperature above T_c to metallic conduction at high temperature. For the metallic samples below x = 0.6, the results of thermoelectric power are well fitted by both of a phenomenological band spectrum model and the Nagaosa and Lee model.     

Transport coefficients and flux motion in Bi2Sr2CaCu2Ox single crystals

We present measurements of the electrical resistivity, thermal conductivity, and Hall, Nernst, and Seebeck effects in the mixed state of single crystalline Bi₂Sr₂CaCu₂O_x. It is shown that the sign of the Hall voltage changes twice as temperature decreases below T_c. From the Nernst effect we estimate the transport entropy S_φ to be about 10⁻¹⁰ erg/K cm. S_φ is equal to zero in the normal state, increases and passes through a maximum at the mixed state as expected. The temperature dependences of the thermoelectric power in magnetic fields are analogous to the resistive transition curves. These phenomena are discussed in terms of flux flow. The contribution of the flux flow to the thermal conductivity is estimated to be negligible. Lowering of the thermal conductivity at temperatures below T_c by a magnetic field is attributed to phonon scattering by the vortex lines.     

The transport properties in Nd0.75Sr1.25CoO4 film: Evidence for polaronic transport

The experiments of electrical resistivity and thermopower on Nd_0.75Sr_1.25CoO₄ film in the temperature range 90 K<T<310 K were carried out. The great difference in the activation energies estimated from thermopower and resistivity, a characteristic of small polarons, is observed, providing strong evidence for polaron-dominated transport mechanism in this material. Furthermore, the activation energy at intermediate-temperature region is larger than that at low-temperature region in resistivity, but it is not observed in thermopower, indicating that the energy for the creation of the carriers is slightly lower at low-temperature region than that at intermediate-temperature region. At the same time, the abrupt drop in the thermopower and the abnormal peak in the differential curve of resistivity indicate that a phase transition between a paramagnetic state and a ferromagnetic state occurs at temperature about 218 K. The positive thermopower in the whole temperature range measured suggests that the carriers are holes in this system.     

Evidences of dense Kondo behaviour in the U-Au system: Electrical and magnetic investigations in U14Au51 and UAu2

U₁₄Au₅₁ and UAu₂ were recently demonstrated the two correct phases stable at room temperature in the U-Au system. Magnetic susceptibility (1.5–300 K) and electrical resistivity (10–800 K) measurements were performed in samples of both phases. Magnetic susceptibility temperature behaviour gives evidences of an antiferromagnetic transition at 23 K in U₁₄Au₅₁, whereas no magnetic order is detected in UAu₂. In both compounds, Kondo-like logarithmic behaviour in electrical resistivity temperature trend is found. Effects already observed in U₂Zn₁₇ and UAl₂ are respectively found in U₁₄Au₅₁ and UAu₂. Possible “heavy fermion” properties of these compounds are discussed.     

Phase transition of [(C6H5)3PCH3]+(TCNQ)-2 and electrical transport properties

The electrical conductivity at 10GHz, the dielectric constant, and the thermoelectric power (TEP) of [(C₆H₅)₃PCH₃]⁺(TCNQ)^-₂, from 230 up to 400 K, have been measured. This organic quasi-one-dimensional solid undergoes a first order phase transition at 314 K. At the transition the conductivity increases by a factor of 2.2 and the activation energy drops to 0.26 from 0.31 eV. At 314 K TEP decreases abruptly from -75 to -60μVK^-1 and remains almost constant for T > 314 K. The dielectric permeability ?₀ is constant and equal to 5 in the low temperature phase, increases abruptly by 7% at the transition, and then depends strongly on temperature in the high temperature phase. Results of the high temperature phase are interpreted in terms of a strongly correlated salt.     

钙钛矿型锰氧化物(La$lt;sub$gt;0.8$lt;/sub$gt;Eu$lt;sub$gt;0.2$lt;/sub$gt;)$lt;sub$gt;4/3$lt;/sub$gt;Sr$lt;sub$gt;5/3$lt;/sub$gt;Mn$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;7$lt;/sub$gt;的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇多晶样品, X-射线衍射分析表明, 样品(La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇结构呈现良好的单相. 通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现: 在300 K以下, 随着温度的降低, 样品先后经历了二维短程铁磁有序转变 (T_C^2D ≈ 282 K)、三维长程铁磁有序转变(T_C^3D ≈ 259 K)、奈尔转变(T_N ≈ 208K)和电荷有序转变(T_CO ≈ 35 K); 样品 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇在T_N以下, 主要处于反铁磁态; 在T_C^3D达到370 K时, 样品处于铁磁-顺磁共存态, 在370 K以上时样品进入顺磁态. 此外, 分析电阻率随温度的变化曲线(ρ-T)得到: 样品在金属-绝缘转变温度(T_P ≈ 80 K)附近出现最大磁电阻值, 其位置远离T_C^3D, 表现出非本征磁电阻现象, 其磁电阻值约为61%. 在T_CO以下, 电阻率出现明显增长, 这是由于温度下降使原本在高温部分巡游的e_g电子开始自发局域化增强所致. 通过对 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇的ρ-T 曲线拟合, 发现样品在高温部分的导电方式基本遵循小极化子的导电方式. 关键词： 磁性 电性 金属-绝缘转变温度 电子自旋共振     

Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass

An irreversible pressure induced semiconductor-to-metal transition in bulk Ge₂₀Te₈₀ glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.     

Magnetic and transport properties of UPd2Sb

A new compound UPd₂Sb was prepared and studied by means of X-ray diffraction, magnetization, electrical resistivity, magnetoresistivity, thermoelectric power and specific heat measurements. The phase crystallizes with a cubic structure of the MnCu₂Al-type (s.g. ). It orders antiferromagnetically at T_N=55 K and exhibits a modified Curie-Weiss behaviour with reduced effective magnetic moment at higher temperatures. The electrical resistivity behaves in a manner characteristic of systems with strong electronic correlations, showing Kondo effect in the paramagnetic region and Kondo-like response to the applied magnetic field. The Seebeck coefficient exhibits a behaviour expected for scattering of conduction electrons on a narrow quasiparticle band near the Fermi energy. The low-temperature electronic specific heat in UPd₂Sb is moderately enhanced being about 81 mJ/mol K².     

Electrical transport measurements in a quasi-onedimensional semiconductor ZrS3

We have used the technique of chemical vapour transport to prepare needle shaped single crystal of ZrS₃. Results of the measurements of d.c. resistivity. Hall coefficient and thermoelectric power of the temperature range 100–500 K are reported. All the samples exhibited semiconducting behaviour with a room temperature resistivity of about 15 Ω-cm and an activation energy of 0.20±0.02 eV. Room temperature thermoelectric power is -850 μVK^?1 and the dominant carriers are electrons. The thermoelectric power varies as (1/T), a behaviour associated with a typical semiconductor. Mobility at low temperatures is limited by ionized impurity scattering and is given by μ₁ = 6.5 × 10^?2T^3/2 cm²V^7-1 sec^?1. At high temperatures, phonon scattering is dominant and the mobility is given by μ₂ = 1.35 × 10⁺⁵T^?32 cm²V^?1 sec^?1.     

Low temperature thermoelectric power of LaB6, PrB6 and NdB6

We have measured the thermoelectric power of LaB₆, PrB₆ and NdB₆ in the temperature range 2–20K. PrB₆ and NdB₆ order antiferromagnetically at T_N = 6.99K and 7.74K respectively, whereas LaB₆ is non-magnetic. The thermoelectric power data have a negative maximum near 5.5K in all three hexaborides. This negative peak is thought to be mainly due to phonon drag in LaB₆. In PrB₆ and NdB₆ there is an additional contribution due to magnon drag. It is expected that the high temperature thermoelectric power is mainly due to an electron diffusion term and a contribution due to spin disorder scattering. The thermoelectric power and the resistivity have been compared in the vicinity of T_N. A qualitative similarity in the temperature derivatives of these two quantities has been found for PrB₆ and NdB₆ near T_N.     

Effect of Ga doping on magneto-transport properties in colossal magnetoresistive La0.7Ca0.3Mn1−xGaxO3 (0<x<0.1)

Samples of La_0.7Ca_0.3Mn_1−xGa_xO₃ with x=0, 0.025, 0.05 and 0.10 were prepared by standard solid-state reaction. They were first characterized chemically, including the microstructure. The magnetic properties and various transport properties, i.e. the electrical resistivity, magnetoresistivity (for a field below 8 T), thermoelectric power and thermal conductivity measured each time on the same sample, are reported. The markedly different behaviour of the x=0.1 sample from those with a smaller Ga content, is discussed. The dilution of the Mn³⁺/Mn⁴⁺ interactions with Ga doping considerably reduces the ferromagnetic double exchange interaction within the manganese lattice leading to a decrease of the Curie temperature. The polaron binding energy varies from 224 to 243 meV with increased Ga doping.     

The thermoelectric power of the metallic glass Ca0.8Al0.2

We report the first measurement of the thermoelectric power Q, of a metallic glass that contains only normal metals. The thermoelectric power of amorphous Ca_0.8Al_0.2 has been measured as a function of temperature from 10 K to 420 K. It is found that Q is positive, varies linearly with temperature and has a small slope. This is similar to the thermoelectric power found for other metallic glasses containing large concentrations of transition metal atoms.