Perovskite‐like metal‐organic frameworks (MOFs) are hybrid materials of high interest for their potential in information storage technology, as Pb‐free substitutes for the widely used lead zirconate titanate (PZT) family of multiferroics. We report here a new, microwave‐assisted method of synthesis for perovskite‐like MOFs, which exploits the advantages of rapid and volumetric heating by microwaves in order to achieve synthesis within minutes, compared to days required by previously reported methods. The preliminary results demonstrate a broad control over the size and morphology of the products, by minor changes in the reaction conditions. An investigation of the effects of size and morphology on the magnetic and dielectric properties is presented here.
We theoretically study the strain effect on the Casimir interactions in graphene based systems. We found that the interactions between two strained graphene sheets are strongly dependent on the direction of stretching. The influence of the strain on the dispersion interactions is still strong in the presence of dielectric substrates but is relatively weak when the substrate is metallic. Our studies would suggest new ways to design next generation devices.
Transition absorption of a photon by an electron passing through a boundary between two media with different permittivities is described both classically and quantum mechanically. Transition absorption is shown to make a substantial contribution to photoelectron emission at a metal/semicon‐ductor interface in nanoplasmonic systems, and is put forth as a possible microscopic mechanism of the surface photoelectric effect in photodetectors and solar cells containing plasmonic nanoparticles.
We demonstrate high optical transmission in solar cell contacts based on nanowire arrays with subwavelength spacing. The photocurrent results obtained from fabricated devices are compared with numerical simulations. The proposed contact design leads to optical losses significantly smaller than the fraction of the top surface taken up by the metallic contact (<10% vs. 36%). The resulting sheet resistance of the contact is 46.7 Ω/square, comparing favourably with transparent conductive oxides.
Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.
Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal. 相似文献
We found that non‐magnetic defects in two‐dimensional topological insulators induce bound states of two kinds for each spin orientation: electron‐ and hole‐like states. Depending on the sign of the defect potential these states can be also of two kinds with different distribution of the electron density. The density has a maximum or minimum in the center. A surprising effect caused by the topological order is a singular dependence of the bound‐state energy on the defect potential.
An observation of negative refraction in the naturally obtained composition of graphene and barium ferrite is reported. The capacitance and inductance measurements revealed the electric and magnetic resonances accompanied with the negative values of permittivity and permeability in the overlapped frequency range. According to the “left‐handed” media approach such a material is characterized by negative refraction. The derived values of the real part of refractive index are negative at the frequencies above 500 MHz.
Defect‐caused visible photoluminescence after visible excitation in anatase TiO2 microresonators couples to whispering gallery modes (WGMs). Spherical anatase TiO2 of a radius between 1.5 µm and 4 µm have been prepared by a sol–gel technique based on hydrolysis of titanium tetrabutoxide. The observation of WGMs in intrinsic anatase TiO2 without additional dopant offers new perspectives for the localisation of light at TiO2 surfaces for the design of photocatalysts.
WGMs show up as narrow peaks in the photoluminescence spectra of TiO2 microparticles after visible excitation. 相似文献
Lead‐free and more air‐stable perovskite Cs2SnI6 absorber with a direct bandgap of 1.48 eV is synthesized via a modified solution process. Different nanostructured ZnO nanorod arrays as electron transport layers and hole blocking layers are grown by controlling the seed layer and used to fabricate mesoscopic perovskite solar cells with Cs2SnI6 as light absorber layer. The influences of ZnO seed layers and nanorod morphology on the device photovoltaic performance were also investigated. With careful control of ZnO nanorod length and pore size to ensure high loading of the Cs2SnI6 absorber, we achieved power conversion efficiency of near 1%.
The reduction of void formation in local Al contact structures is of high interest in studies dealing with passivated emitter and rear contact (PERC) solar cells. So far, several processing parameters and their impact on local contact formation were investigated in detail. However, up to now density variation of Al in dependence on temperature and Si content in the melt were not taken into account as a principal reason for void formation. In this context the current assumption of a constant volume of the Al paste particles is discussed in more detail. Based on the results of energy dispersive X‐ray spectroscopy, void formation implies either an expansion of paste particles or their burst during contact formation.
Si thin films on glass grown by liquid phase crystallization (LPC) exhibit large grains resembling those in multicrystalline Si wafers. The present work gives direct insight into how planar defects in LPC‐Si thin films influence the device performance of the corresponding solar cells by acquiring electron‐backscatter diffraction maps and measuring solar cell parameters on the same identical positions. By this approach, it was possible to demonstrate how low scanning velocities of the laser line during the crystallization lead to lower densities of grain boundaries, to improved charge‐carrier diffusion lengths, and hence to improved device performances.
Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.
The CuNi binary alloy can be significant as a catalyst for nitrogen‐doped (N‐doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N‐doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few‐layer graphene domains. X‐ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N‐doped bilayer graphene domains can be synthesized on the CuNi binary alloy.
Using the recently suggested method of processing the data on external quantum efficiency as a function of output optical power, we have estimated the dependence of light extraction efficiency of high‐power light‐emitting diodes (LEDs) on their emission wavelength varied between 425 nm and 540 nm. The extraction efficiency is found to increase with the wavelength from ～80% to ～85% in this spectral range and to correlate with the wavelength dependence of reflectivity of the large‐area p‐electrode being the essential unit of the LED chip design. The correlation found identifies the incomplete reflection of emitted light from the electrode as the major mechanism eventually controlling the spectral dependence of the efficiency of light extraction from the LEDs.
The excitons in the orthorhombic phase of the perovskite CH3NH3PbI3 are studied using the effective mass approximation. The electron–hole interaction is screened by a distance‐dependent dielectric function, as described by the Haken potential or the Pollmann–Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The results show that the Pollmann–Büttner model, using the corresponding parameters obtained from ab initio calculations, provides better agreement with the experimental results.
The α‐PbO2‐type TiO2 is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO2‐type TiO2 induces visible‐light photocatalytic activity. These results indicate that α‐PbO2‐type TiO2 is an important candidate material for use in a photocatalytic matrix.
An optimized test structure to study rear surface passivation in Cu(In,Ga)Se2 (CIGS) solar cells by means of photoluminescence (PL) is developed and tested. The structure – illustrated in the abstract figure – is examined from the rear side. To enable such rear PL assessment, a semi‐transparent ultra‐thin Mo layer has been developed and integrated in place of the normal rear contact. The main advantages of this approach are (i) a simplified representation of a rear surface passivated CIGS solar cell is possible, (ii) it is possible to assess PL responses originating close to the probed rear surface, and (iii) a stable PL response as a function of air exposure time is obtained. In this work, PL measurements of such structures with and without rear surface passivation layers have been compared, and the measured improvement in PL intensity for the passivated structures is associated with enhanced CIGS rear interface properties.
We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.
Pentacene thin‐film transistor with high‐κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine‐plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub‐threshold swing and lowest low‐frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM.
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