Thermo-chemical reactions of freed halogen interstitials in KBr;Na

The thermal annealing of the V₁ band in KBr;Na is studied. It was found that this band is made up of three different centres having trap depths of 0.23, 0.27 and 0.30 ± 0.03 eV, respectively. Thermal decay of these centres, accompanied with TL emission, obeys first order kinetics and results in the conversion into V₄ or V(306) centres as well as in the recombination with F centres. The ratio between conversions and recombinations was obtained for these centres.     

Defect characterization of Ga<Subscript>4</Subscript>Se<Subscript>3</Subscript>S layered single crystals by thermoluminescence

Trapping centres in undoped Ga ₄Se ₃S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15 ?300 K. After illuminating the sample with blue light (～470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K /s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K /s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.     

19F nuclear magnetic resonance in CeF3

A ¹⁹F pulsed NMR investigation of single crystals of CeF₃ and CaF₂-doped CeF₃ has been undertaken in the temperature range 300–570K at a frequency of 14 and 60 MHz. It was found that the free-induction decay is non-linear and could be fit by a sum of exponentials using a nonlinear least square procedure to an appropriate functional form. The results of this analysis indicate that there are three distinct spin-spin relaxation times T₂, which is consistent with the existence of three inequivalent fluorine sublattices. At room temperature, fluorine ions on two of the sublattices were found to be in motion, with the fastest ion specified as the F3-type in the Oftedal structure.The temperature dependence of the spin-spin relaxation time T₂ for the fastest ions was found to undergo an inversion at 400 and 385K for the pure and doped samples, respectively. The inversion indicates an increase in the interchange rate of ions between two sublattices. Activation energies are 0.29 ± 0.02 eV in the low temperature region and 0.21 ± 0.01 eV in the high temperature region for the pure sample, with corresponding values of 0.24 ± 0.01 eV and 0.23 ± 0.02 eV for the doped sample.T₁ was approximately the same for both samples, and essentially temperature independent, indicating an exchange-dominated spin-lattice decay mechanism.     

The heat capacity of the layer compounds (CH3CH2CH2NH3)2MnCl4 and (CH3CH2CH2NH3)2CdCl4 from 10 K TO 300 K

The heat capacity of the layer compounds tetrachlorobis (n-propylammonium) manganese II and tetrachlorobis (n-propylammonium) cadmium II, (CH₃CH₂CH₂NH₃)₂MnCl₄ and (CH₃CH₂CH₂NH₃)₂CdCl₄ respectively, has been measured over the temperature range 10 K ?T ? 300 K.Two known structural phase transitions were observed for the Mn compound in this temperature region: at T = 112.8 ± 0.1 K (ΔH_t= 586 ± 2 J mol^?1; ΔS_t = 5.47 ± 0.02 J K^?1mol^?1) and at T =164.3 ± (ΔH_t = 496 ± 7 J mol^?1; ΔS_t =3.29 ± 0.05 J K^?1mol^?1). The lower transition is known to be from a monoclinic structure to a tetragonal structure, while the upper is from the tetragonal phase to an orthorhombic one. From comparison with the results for the corresponding methyl Mn compound it is deduced that the lower transition primarily involves changes in H-bonding while the upper transition involves motion in the propyl chain.A new structural phase transition was observed in the Cd compound at T= 105.5 ± 0.1 K (ΔH_t= 1472.3 ± 0.1 J mol^?1; ΔS_t = 13.956 ± 0.001 J K^?1mol^?1), in addition to two transitions that have been observed previously by other techniques. The higher of these transitions(T = 178.7 ± 0.3 K; ΔH_t = 982 ± 4 J mol^?1 ΔS_t = 6.16 ± 0.02 J K^? mol^?1) is known to be between two orthorhombic structures, while the structural changes at the lower transition (T= 156.8 ± 0.2 K; ΔH_t = 598 ± 5 J mol^?1, ΔS_t = 3.85 ± 0.03 J K^?1 mol^?1) and at the new transition are not known. It is proposed that these two transitions correspond respectively to the tetragonal to orthorhombic and monoclinic to tetragonal transitions in the propyl Mn compounds.In addition to the structural phase transitions (CH₃CH₂CH₂NH₃)₂MnCl₄ magnetically orders at t? 130 K. The magnetic contribution to the heat capacity is deduced from the heat capacity of the corresponding diamagnetic Cd compound and is of the form expected for a quasi 2-dimensional Heisenberg antiferromagnet.     

NMR study of one-dimensional ionic conductor with hollandite-type structure. II. Frequency dependence of spin-lattice relaxation time of 27Al

Frequency dependence of spin-lattice relaxation time T₁ of ²⁷Al in one-dimensional K⁺ ion conductor, K-Al-priderite, was measured at 45 K in the frequency range from 10.1 MHz to 55 MHz. It is found that T₁ is proportional to ω^1.49±0.05 and agrres well with the $\text{ω}{}^{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}$ dependence derived by the continuum diffusion model. The intrinsic activation energy is determined to be 0.058 eV by doubling the slope E_NMR=0.029 eV of the d(ln T₁)/dT curve in the low temperature region. The frequency dependence of T₁ in the high temperature region measured in the frequency range from 11.5 MHz to 20.8 MHz shows a tendency that the frequency dependence becomes smaller than the $\text{ω}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ dependence as temperature is raised above 450 K.     

The luminescence properties of MgUO4

The luminescence of MgUO₄ has been investigated. Emission and excitation spectra as well as the decay time and the quantum efficiency of the emission were measured at 4.2 K. The temperature dependence of the emission spectrum and the emission intensity was studied. The results show that in MgUO₄ the emission originates from uranate centres near defects. These centres act as optical traps. Even at 4.2 K about 90% of the excitation energy is lost non-radiatively by trapping at killer sites. These are most probably due to the presence of U⁵⁺ ions.     

Trapping mechanism in the afterglow process of the rare-earth activated Y2O2S phosphors

Phosphorescence properties are investigated in Y₂O₂S phosphors doped with rare-earth (lanthanoid, Ln) ions. Luminescence afterglow with a decay time of several ten milliseconds is observed at room temperature in the phosphors activated by Nd, Sm, Eu, Dy, Ho, Tm, Er, and Yb. The depths (thermal activation energies) of the traps causing the afterglow are measured with the transient luminescence method.It is concluded that the excited electron and the hole in the conduction and valence bands are trapped separately in the states (impurity levels) located in the vicinity of the Ln³⁺ ion. The trapping depths of the level range from 0.3 to 1.1 eV and are dependent on the electron affinity of the Ln³⁺ ion estimated from the energy difference between the 4fⁿ⁺¹ and the 4fⁿ configurations in the 4f shell of the ion.     

Temperature dependence of the fundamental absorption edge in CuGaSe2

The temperature dependence of the fundamental absorption edge in CuGaSe₂ single crystals was determined in the temperature range from 15 to 300 K. Above about 120 K the gap energy changes linearly with temperature with dE_g/dT = ? (2.1 ± 0.1) eV K^?1. The downshift in dE_g/dT of the I–III–VI₂ compounds compared to their II–VI analogs is discussed accounting for the p-d hybridization of the uppermost valence band.     

低密度聚乙烯热压成型过程中的空间电荷

借助开路热刺激放电(TSD)电流及原位实时电荷TSD和电荷等温衰减测量，研究了低密度聚乙烯(LDPE)在热压成型过程中所产生的空间电荷特性.结果表明具有良好室温稳定性的成型电荷被束缚在两类陷阱能级中：浅阱和深阱，其陷阱中心深度分别约为0.92eV和1.31eV.初步的分析进一步表明了它们应该分别位于试样的表层和体内，为近表面陷阱和体陷阱. 关键词： 低密度聚乙烯(LDPE) 热压成型 空间电荷 热刺激放电(TSD)     

The trapping of K and Na atoms by a clean W(110) surface trajectory calculations

The fraction of K and Na atoms initially trapped by the W(110) surface has been measured as a function of the incident energy (0.5–15 eV) and as a function of the incident angle. The trapping probability equals one at low incident energies (E_i ? 0.5 eV) and decreases with increasing energy. The measurements show an increase of trapping with increasing angle of incidence θ_i (measured from the surface normal). Simultaneously the desorption energies Q_i were determined from the temperature dependence of the measured mean residence time on the W(110) surface. We obtained for K: Q_i = 2.05 ± 0.02 eV, and for Na: Q_i = 2.60 ± 0.04 eV.The trapping phenomenon at a solid surface was approximated in a theoretical way by calculating the in-plane trajectory of a projectile scattered from a diatomic surface-molecule. The important feature which showed up was the conversion of tangential to normal momentum of the projectile, and thus the inapplicability of cube models. As a function of the angle of incidence two regimes can be distinguished: at the smaller angles the scattering is governed by simultaneous interaction of the projectile with two neighbouring surface atoms, and at the higher angles of incidence the single particle interaction contributes most to the momentum transfer.     

Effect of cobalt impurities on the electrical and photoelectrical properties of GaS single crystals

Static dark current-voltage characteristics (CVC's), the temperature dependence of electric conductivity [σ(T)], the currents of thermostimulated depolarization (TSD), the spectral distribution of photoconductivity (SDPC) and photoluminescence (PL) have been studied in GaS 〈0.1 at % Co〉 single crystals.The results of complex investigations of CVC's, σ(T) dependences, TSD, the SDPC and PL show that the forbidden gap of GaS 〈0.1 at % Co〉 single crystals exhibits acceptor levels (E_V + 0.26 and E_V + 0.63 eV).     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Temperature dependence of the radiation-stimulated conductivity of CsI crystals upon picosecond excitation by electron beams

The temperature dependence of the pulse conductivity for CsI crystals upon excitation with an electron beam (0.2 MeV, 50 ps, 400 A/cm²) at a time resolution of 150 ps is investigated. Under experimental conditions, the time of bimolecular recombination of electrons and holes (V _k centers) is directly measured in the temperature range 100–300 K. This made it possible to calculate the temperature dependence of the effective recombination cross section S(T)=7.9×10^?8 T² cm². The temperature dependence of the conductivity σ(T) is interpreted within the model of the separation of genetically bound electron-hole pairs. The activation energy of this process is found to be E _G =0.07 eV.     

A.C. electrical conductivity of potassium perchlorate

A.C. electrical conductivity of pottasium perchlorate (KP) has been measured in the temperature range 25–325°C at frequencies ranging from 50–500 Hz using an automated technique. Three regions with activation energies. 1.08 ± 0.02, 0.66 ± 0.01 and 0.39 ± 0.04eV are observed in ln(σT) vs 1/T plots at frequencies < - 50 Hz. Dielectric loss measurements on KP samples doped with CrO₄^2? and SO₄^2? ions show the presence of impurity-vacancy complexes with reorientation energies of 0.99 ±0.02 and 1.07 ± 0.01 eV respectively. The results are interpreted in terms of a defect model which highlights the role of various conduction and relaxation mechanisms in the a.c. electrical properties of the material.     

Susceptibility — Knight shift correlation and the band structure of VO2

The magnetic susceptibility and⁵¹V Knight shift have been measured in powdered VO₂ from the semiconductor-metal transition temperatureT _t=341°K to 478°K. The fact that both depend linearly on temperature enables the orbital and spin contributions to both quantities to be evaluated. The orbital and spin susceptibilities at 341°K are found to be 1.30±0.07 and 7.49±0.07μemu g^?1, respectively, and the corresponding shifts +0.61±0.04% and ?1.00±0.04%. The existence and magnitude of the orbital term are consistent with the currently accepted two band model of VO₂ aboveT _t.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements

Dark electrical conductivity and photoconductivity of Tl₂InGaTe₄ single crystals have been measured and analyzed in the temperature region 100–300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl₂InGaTe₄ crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the conduction band. The photocurrent increases with increasing illumination intensity. The recombination mechanism in the crystal changes as temperature decreases due to the effect of exponential trapping centres. Two trapping and/or recombination centres located at 89 and 27 meV were determined from the temperature dependence of the photocurrent, which decreased or increased with increasing temperature in the regions above or below 180 K, respectively.     

CeAlO<Subscript>3</Subscript> crystals: Preparation and study of their electrical and optical characteristics

Crystals of cerium aluminate with perovskite structure were obtained using the cold-crucible technique. The electrical and optical properties of cerium aluminate were studied in air in the range 300–1300 K. The main characteristics of CeAlO₃ at T=300 K are a follows: electrical conductivity σ=10^?7 S/cm, dielectric permittivity ?=3000–10000 (both measured at a frequency of 1000 Hz), thermal band-gap width ΔE=2.3±0.5 eV, and optical width δE=2.65±0.25 eV, which decreases at a rate of ?0.62×10^?3 eV/K with increasing temperature in the 300-to 1500-K interval.     

Drift mobility measurements in melt-grown baryum titanate

Drift mobility measurements in melt-grown BaTiO₃ single crystal have been performed using the Spear method. The mobility of (3 ± 1) × 10^?3 cm²V^?1 sec^?1 at room temperature is found to be thermally activated, with an activation energy of 0.15 ± 0.04 eV. Two interpretations are investigated to explain these results: trapping effects due to oxygen vacancies or small polaron hopping.     

Li<Superscript>+</Superscript> ion conductivity and transport properties of LiYP<Subscript>2</Subscript>O<Subscript>7</Subscript> compound

A lithium yttrium diphosphate LiYP₂O₇ was prepared by a solid-state reaction method. Rietveld refinement of the X-ray diffraction pattern suggests the formation of the single phase desired compound with monoclinic structure at room temperature. The infrared and Raman spectrum of this compound was interpreted on the basis of P₂O₇ ^4? vibrations. The AC conductivity was measured in the frequency range from 100 to 10⁶ Hz and temperatures between 473 and 673 K using impedance spectroscopy technique. The obtained results were analyzed by fitting the experimental data to the equivalent circuit model. The Cole–Cole diagram determined complex impedance for different temperatures. The angular frequency dependence of the AC conductivity is found to obey Jonscher’s relation. The temperature dependence of σ _AC could be described in terms of Arrhenius relation with two activation energies, 0.87 eV in region I and 1.36 eV in region II. The study of temperature variation of the exponent(s) reveals two conduction models: the AC conduction dependence upon temperature is governed by the correlated barrier hopping (CBH) model in region I (T < 540 K) and non-overlapping small polaron tunneling (NSPT) model in region II (T > 540 K). The near value of activation energies obtained from the equivalent circuit and DC conductivity confirms that the transport is through ion hopping mechanism dominated by the motion of the Li⁺ ion in the structure of the investigated material.