Passively modelocked surface-emitting semiconductor lasers

This paper will review and discuss pico- and femtosecond pulse generation from passively modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We shall discuss the physical principles of ultrashort pulse generation in these lasers, considering in turn the role played by the semiconductor quantum well gain structure, and the saturable absorber. The paper will analyze the fundamental performance limits of these devices, and review the results that have been demonstrated to date. Different types of semiconductor saturable absorber mirror (SESAM) design, and their characteristic dynamics, are described in detail; exploring the ultimate goal of moving to a wafer integration approach, in which the SESAM is integrated into the VECSEL structure with tremendous gain in capability. In particular, the contrast between VECSELs and diode-pumped solid-state lasers and edge-emitting diode lasers will be discussed. Optically pumped VECSELs have led to an improvement by more than two orders of magnitude to date in the average output power achievable from a passively modelocked ultrafast semiconductor laser.     

Ultrafast Nonlinear Optical Properties of a Graphene Saturable Mirror in the 2 μm Wavelength Region

Mid‐infrared ultrafast lasers have emerged as a promising platform for both science and industry because of their inherent high raw power and eye‐safe spectrum. 2D nanostructures such as graphene have emerged as promising photonic materials for laser mode‐locking to generate ultrashort pulses. However, there are still many unanswered questions about graphene's key advantages to be practical devices, especially over the matured semiconductor saturable absorber mirror (SESAM). In this work, we conducted systematic comparisons on the nonlinear optical properties of graphene and that of a commercial SESAM at 2 μm wavelength. Our results showed that graphene has significant advantages over the commercial SESAM, exhibiting ∼28% less absorptive cross‐section ratio of excited‐state to ground‐state and ∼50 times faster relaxation time. This implies that graphene can be exploited as a better mode‐locker than the current commercial SESAM for high power, high repetition rate and ultrafast mid‐infrared laser sources.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Passively Q-Switched Nd：KLuW Laser with Semiconductor Saturable Absorber

We demonstrate a passively Q-switched Nd：KLu W laser with a semiconductor sat urable absorber mirror （SESAM） at wavelength 1070 nm. At a pump power of 1.3 W, the pulse width is measured to be about 17ns with repetition rate of lOkHz and with the average output power of 260roW. To our knowledge, this is the first demonstration of Nd：KLuW used for passively Q-switched laser with an SESAM.     

Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL

Near-transform-limited subpicosecond pulses at 1.56 μm were generated from an optically pumped InP-based vertical-external-cavity surface-emitting laser (VECSEL) passively mode-locked at 2 GHz repetition rate with a fast InGaAsNSb/GaAs semiconductor saturable absorber mirror (SESAM). The SESAM microcavity resonance was adjusted via a selective etching of phase layers specifically designed to control the magnitude of both the modulation depth and the intracavity group delay dispersion of the SESAM. Using the same VECSEL chip, we observed that the mode-locked pulse duration could be reduced from several picoseconds to less than 1 ps with a detuned resonant SESAM.     

Optical characterization of semiconductor saturable absorbers

Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two-level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are given. PACS 07.60.Hv; 42.65.Re; 42.70.Nq     

Fluoride semiconductor saturable-absorber mirror for ultrashort pulse generation

We demonstrate what is to our knowledge the first ultrabroadband monolithically grown AlGaAs/CaF(2) semiconductor saturable-absorber mirror (SESAM) that covers nearly the entire gain spectrum of a Ti:sapphire laser. A large high-reflectivity bandwidth of more than 300 nm is provided by a device consisting of only six material layers. This fluoride SESAM had a modulation depth of 2.2%, a fast recovery time constant of less than 150 fs, and a slow recovery time constant of 1.2 ps. Using this SESAM inside a Ti:sapphire laser produced self-starting sub-10-femtosecond pulses.     

Contrastive study of two SESAMs for passive mode-locking in Nd:YVO4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ～ 20 mW.     

Passive mode-locking of the Yb:CNGG laser

Passive mode-locking using a SESAM is demonstrated for the Yb-doped cubic non-stoichiometric crystal CNGG which exhibits local disorder. The pulse duration of 73 fs obtained is the shortest for an isotropic Yb-doped laser crystal while larger output coupling resulted in average output powers of 750 mW with 66% efficiency in the mode-locked regime.     

Highly Efficient Self-Starting Femtosecond Cr:Forsterite Laser

We report a highly efficient and high power self-starting femtosecond Cr：forsterite laser pumped by a 1064-nm Yb doped fibre laser. Five chirped mirrors are used to compensate for the intra-cavity group-delay dispersion, and the mode-locking is initiated by a semiconductor saturable absorber mirror （SESAM）. Under pump power of 7.9 W, stable femtosecond laser pulses with average power of 760mW are obtained, yielding a pump power slope efficiency of 12.3%. The measured pulse duration and spectral bandwidth （FWHM） are 46 fs and 45 nm; the repetition rate is 82 MHz.     

Passively Mode-Locked Quasi-Three-Level Nd:LuVO4Laser with Semiconductor Saturable Absorber Mirror

We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.     

含负克尔效应半导体可饱和吸收镜的五镜腔飞秒钛宝石激光器的理论分析

基于半导体可饱和吸收镜(SESAM)的负克尔效应，对含SESAM的五镜腔进行了理论计算和分析.结果表明，由于SESAM的负克尔效应，与没有SESAM的相比，锁模激光器的稳区在上稳区的内边缘有明显扩展，这使得激光器锁模启动的工作点更加靠近直流运转时的稳区边缘，从而获得更大的非线性因子.这说明SESAM的可饱和吸收机理具有锁模自启动效应外，其负克尔效应也有助于锁模的自启动. 关键词： 半导体可饱和吸收镜 负克尔效应 五镜腔     

半导体可饱和吸收镜实现固体激光器皮秒锁模的机理研究

对半导体可饱和吸收镜(SESAM)实现固体激光器皮秒锁模的机理进行了研究。通过对染料锁模介质和SESAM的结构对比,对SESAM皮秒锁模机理提出了一个新的解释。其在锁模激光器中充当锁模器件时,不仅仅是一个吸收体,同时也是一个增益介质。当腔内增益和损耗保持平衡时实现稳定的连续锁模。     

Passive mode-locking in diode-pumped c-cut Nd:LuVO<Subscript>4</Subscript> laser with a semiconductor saturable-absorber mirror

We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO₄ picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO₄ laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.     

用于钛宝石激光器自启动锁模的半导体可饱和吸收镜

报道国内首次制作的宽带低损耗半导体可饱和吸收镜（SESAM）。该反射镜已经成功用于钛宝石飞秒脉冲激光器的自启动锁模运转。     

基于传播圆补偿像散的被动锁模激光器谐振腔设计方法

由于超短脉冲激光器的谐振腔大都采用多镜折叠的形式,像散已成为影响锁模激光器性能优劣的重要问题.本文提出了一种基于传播圆补偿像散的被动锁模激光器谐振腔设计方法,该方法简单、直观、高效,容易找到补偿像散的最佳位置.理论研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,SESAM处的子午光斑和弧矢光斑大小几乎相等,像散得到补偿.该谐振腔对外界干扰引起的腔镜振动和热透镜焦距的变化均不敏感,谐振腔的抗干扰性很强.实验研究表明,当SESAM位于子午和弧矢传播圆交汇处附近时,锁模激光器可获得稳定连续的锁模激光脉冲,且激光器的抗干扰性很强.本文的理论研究与实验结果相一致.     

Dielectric coatings for optimized low-loss saturable absorbers for high-power ultrafast laser

With the development of high power ultrafast laser passively mode-locked by a semiconductor saturable absorber mirror （SESAM）, the damage threshold and degeneration mechanism of the SESAM become more and more important. One way to reduce the maximum electric field inside the active part of the SESAM is the use of a dielectric coating on the top of the semiconductor structure. With Presnel formula, optical transfer matrix, and optical thin film theory, the electric field distribution and reflectance spectrum can be simulated. We introduce the design principles of SESAM including the dependence of reflectance spectrum on dielectric function of absorber, and investigate the dependences of the electric field distribution, modulation depth, reflectance spectrum, and the relative value of incident light power at the top quantum well of SESAM on the number of SiO2/Ta2O5 layers.     

Passively mode-locked Nd:YVO4 laser using semiconductor saturable absorption mirrors of interface states relaxation region

Semiconductor saturable absorber mirrors (SESAMs) with GaAs/air interface relaxation region have less non-saturable loss than those with low temperature grown In_0.25Ga_0.75As relaxation region. A thin layer of SiO₂ and a high reflectivity film of Si/(SiO₂/Si)₄ were coated on the SESAMs, respectively in order to improve the SESAM's threshold for damage. The passively continuous wave mode-locked lasers with two such SESAMs were demonstrated, and the SESAM with high reflectivity film of Si/(SiO₂/Si)₄ is proved to be helpful for high output power.     

用腔内半导体可饱和吸收镜钛宝石激光器中自锁模状态的实验研究

用可饱和吸收体镜(SESAM)的掺钛蓝宝石激光器能够稳定运转在三种不同的锁模状态,即可饱和吸收体被动锁模、孤子锁模加被动锁模和KLM锁模.分析了三种自锁模的机理和SESAM的作用.对SESAM实现KLM锁模的自启动机制进行了实验观察和讨论.从该激光器的KLM锁模状态,获得了小于18飞秒的锁模脉冲序列. 关键词： 半导体可饱和吸收镜 自锁模 钛宝石激光器     

A diode-pumped, self-starting, all-solid-state self-mode-locked Cr:LiSGAF laser

In this paper, a self-starting, diode-pumped self-mode-locked Cr:LiSGAF laser, which produced a stable pulse train of 45 fs duration with about 20 mW-average power at the repeated rate of 90 MHz, was presented. Self-mode-locked operation can be obtained whether there is the semiconductor saturable absorber mirror (SESAM) in the Cr:LiSGAF laser cavity or not, and with the SESAM in the cavity, the self-mode-locked operation could self-start. The shortest pulses, as short as 38 fs, which were not very stable, were obtain with the SESAM in the cavity.