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1.
Hidenobu Murata Yusuke Kataoka Tatsuya Kawamoto Isao Tanaka Takashi Taniguchi 《固体物理学:研究快报》2014,8(10):822-826
The α‐PbO2‐type TiO2 is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO2‐type TiO2 induces visible‐light photocatalytic activity. These results indicate that α‐PbO2‐type TiO2 is an important candidate material for use in a photocatalytic matrix.
2.
Whispering gallery modes in intrinsic TiO2 microspheres coupling to the defect‐related photoluminescence after visible excitation 下载免费PDF全文
Defect‐caused visible photoluminescence after visible excitation in anatase TiO2 microresonators couples to whispering gallery modes (WGMs). Spherical anatase TiO2 of a radius between 1.5 µm and 4 µm have been prepared by a sol–gel technique based on hydrolysis of titanium tetrabutoxide. The observation of WGMs in intrinsic anatase TiO2 without additional dopant offers new perspectives for the localisation of light at TiO2 surfaces for the design of photocatalysts.
3.
Mohammed J. Uddin Deborah E. Daramola Ever Velasquez Tarik J. Dickens Jin Yan Emily Hammel Federico Cesano Okenwa I. Okoli 《固体物理学:研究快报》2014,8(11):898-903
An innovative hybrid QD sensitized photovoltaic carbon nanotubes microyarn has been developed using thermally‐stable and highly conductive carbon nanotubes yarns (CNYs). These CNYs are highly inter‐aligned, ultrastrong and flexible with excellent electrical conductivity, mechanical integrity and catalytic properties. The CNYs are coated with a QD‐incorporated TiO2 microfilm and intertwined with a second set of CNYs as a counter electrode (CE). The maximum photon to current conversion efficiency (ηAM1.5) achieved with prolonged‐time stability was 5.93%. These cells are capable of efficiently harvesting incident photons regardless of direction and generating photocurrents with high efficiency and operational stability.
4.
Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors 下载免费PDF全文
Mihaela Popovici Ben Kaczer Valeri V. Afanas'ev Gabriele Sereni Luca Larcher Augusto Redolfi Sven Van Elshocht Malgorzata Jurczak 《固体物理学:研究快报》2016,10(5):420-425
Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO3 dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO3 would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.
5.
The excitons in the orthorhombic phase of the perovskite CH3NH3PbI3 are studied using the effective mass approximation. The electron–hole interaction is screened by a distance‐dependent dielectric function, as described by the Haken potential or the Pollmann–Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The results show that the Pollmann–Büttner model, using the corresponding parameters obtained from ab initio calculations, provides better agreement with the experimental results.
6.
Po‐Chun Chen Yu‐Chien Chiu Zhi‐Wei Zheng Chun‐Hu Cheng Yung‐Hsien Wu 《固体物理学:研究快报》2016,10(12):919-923
We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (Ilight/Idark) of 8.2 × 103 at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.
7.
Jing Wang Ningning Zu Xianfeng Hao Yuanhui Xu Zhiping Li Zhijian Wu Faming Gao 《固体物理学:研究快报》2014,8(9):776-780
Structural, electronic and magnetic properties of Sr2FeOsO6 have been revisited by using the first‐principle calculations. Semiconducting behavior is reproduced. The band gap is 0.09 eV from generalized gradient approximation (GGA) and 0.30 eV by considering both SOC and U, a bit larger than the experimental observed 0.125 eV. In the C‐type antiferromagnetic configuration, spin frustration is found by analysing the magnetic exchange parameters, explaining the experimental observed magnetic complexity.
8.
An observation of negative refraction in the naturally obtained composition of graphene and barium ferrite is reported. The capacitance and inductance measurements revealed the electric and magnetic resonances accompanied with the negative values of permittivity and permeability in the overlapped frequency range. According to the “left‐handed” media approach such a material is characterized by negative refraction. The derived values of the real part of refractive index are negative at the frequencies above 500 MHz.
9.
Jianyu Wang Huabin Sun Yun Sheng Fan Gao Yao Yin Yun Li Lijia Pan Youdou Zheng Yi Shi Takashi Sekiguchi 《固体物理学:研究快报》2015,9(8):466-469
Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ~10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.
10.
CuNi binary alloy catalyst for growth of nitrogen‐doped graphene by low pressure chemical vapor deposition 下载免费PDF全文
Remi Papon Kamal P. Sharma Rakesh D. Mahayavanshi Subash Sharma Riteshkumar Vishwakarma Mohamad Saufi Rosmi Toshio Kawahara Joseph Cline Golap Kalita Masaki Tanemura 《固体物理学:研究快报》2016,10(10):749-752
The CuNi binary alloy can be significant as a catalyst for nitrogen‐doped (N‐doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitutional N‐doped bilayer graphene on the binary alloy catalyst. Raman spectroscopy, atomic force microscopy and transmission electron microscopy analysis confirm the growth of bilayer and few‐layer graphene domains. X‐ray photoelectron spectroscopy analysis shows the presence of around 5.8 at% of nitrogen. Our finding shows that large N‐doped bilayer graphene domains can be synthesized on the CuNi binary alloy.
11.
Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub‐micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi‐, Se‐, and Te‐bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on‐going searches for Majorana fermions (Mourik et al., Science 336 , 1003 (2012) and Cook et al., Rev. B 86 , 155431 (2012) [1, 2]).
12.
The recently reported MgAl2O4 tunnel barrier for the magnetic tunnel junctions (MTJs) is considered to be an alternative to the conventional MgO barrier, since a large tunnel magnetoresistance (TMR) ratio was obtained for the MgAl2O4‐based MTJs. In this study, we demonstrated large perpendicular magnetic anisotropy (PMA) arising from the interfaces of Fe(001)/MgAl2O4 layered structures, which can be useful for developing perpendicularly magnetized MgAl2O4‐based MTJs. A PMA energy density of 0.4 MJ/m3 was achieved for an epitaxially grown 0.7 nm thick Fe/MgAl2O4(001). Interestingly, the interface PMA was also obtained for the Fe/non‐epitaxially grown MgAl2O4 structures, which indicates that the crystallographic structure of MgAl2O4 layer has no critical influence on the obtained PMA.
13.
Sergei V. Zhukovsky Igor E. Protsenko Renat Sh. Ikhsanov Igor V. Smetanin Viktoriia E. Babicheva Alexander V. Uskov 《固体物理学:研究快报》2015,9(10):570-574
Transition absorption of a photon by an electron passing through a boundary between two media with different permittivities is described both classically and quantum mechanically. Transition absorption is shown to make a substantial contribution to photoelectron emission at a metal/semicon‐ductor interface in nanoplasmonic systems, and is put forth as a possible microscopic mechanism of the surface photoelectric effect in photodetectors and solar cells containing plasmonic nanoparticles.
14.
Direct correlation of microstructure and device performance of liquid phase crystallized Si thin film solar cells on glass 下载免费PDF全文
Sven Kühnapfel Stefan Gall Paul Sonntag Norbert Schäfer Daniel Abou‐Ras 《固体物理学:研究快报》2016,10(9):657-661
Si thin films on glass grown by liquid phase crystallization (LPC) exhibit large grains resembling those in multicrystalline Si wafers. The present work gives direct insight into how planar defects in LPC‐Si thin films influence the device performance of the corresponding solar cells by acquiring electron‐backscatter diffraction maps and measuring solar cell parameters on the same identical positions. By this approach, it was possible to demonstrate how low scanning velocities of the laser line during the crystallization lead to lower densities of grain boundaries, to improved charge‐carrier diffusion lengths, and hence to improved device performances.
15.
Lead‐free mesoscopic Cs2SnI6 perovskite solar cells using different nanostructured ZnO nanorods as electron transport layers 下载免费PDF全文
Xiaofeng Qiu Yanan Jiang Hailiang Zhang Zhiwen Qiu Shuai Yuan Ping Wang Bingqiang Cao 《固体物理学:研究快报》2016,10(8):587-591
Lead‐free and more air‐stable perovskite Cs2SnI6 absorber with a direct bandgap of 1.48 eV is synthesized via a modified solution process. Different nanostructured ZnO nanorod arrays as electron transport layers and hole blocking layers are grown by controlling the seed layer and used to fabricate mesoscopic perovskite solar cells with Cs2SnI6 as light absorber layer. The influences of ZnO seed layers and nanorod morphology on the device photovoltaic performance were also investigated. With careful control of ZnO nanorod length and pore size to ensure high loading of the Cs2SnI6 absorber, we achieved power conversion efficiency of near 1%.
16.
Jifeng Shao Zhongheng Liu Xiong Yao Li Pi Shun Tan Changjin Zhang Yuheng Zhang 《固体物理学:研究快报》2014,8(10):845-848
We report the synthesis of single‐phase Bi3O2S3 sample and confirm the occurrence of bulk superconductivity with transition temperature at 5.8 K. The Bi3O2S3 superconductor is categorized as typical type‐II superconductor based on the results of both temperature and magnetic field dependences of magnetization. Hall coefficient measurements give evidence of a multiband character, with a dominant conduction mainly by electron‐like charge carriers. The charge carrier density is about 1.45 × 1019 cm–3, suggesting that the system has very low charge carrier density.
17.
We present a detailed temperature‐dependent (4–300 K) spectroscopic study of DyMnO3 single crystals with distorted perovskite structure. Energies of 36 crystal‐field levels of Dy3+ in paramagnetic DyMnO3 were determined. The Dy3+ ground Kramers doublet does not split at and splits below Tlock = 18 K. The splitting grows fast at temperatures near and reaches Δ0 ≈ 11 ± 2 cm–1 at 4 K. Using the experimental temperature dependence Δ0(T), we calculate the dysprosium magnetic moment mDy(T) and the dysprosium contribution into specific heat and magnetic susceptibility. Analysing all the experimental data, we conclude that the Dy–Mn interaction is of the Dzyaloshinskii–Moriya type.
18.
Pentacene thin‐film transistor with high‐κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine‐plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub‐threshold swing and lowest low‐frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM.
19.
High‐temperature ferroelectricity and strong magnetoelectric effects in a hybrid organic–inorganic perovskite framework 下载免费PDF全文
Ying Tian Alessandro Stroppa Yi‐Sheng Chai Paolo Barone Manuel Perez‐Mato Silvia Picozzi Young Sun 《固体物理学:研究快报》2015,9(1):62-67
A Cu‐based organic–inorganic perovskite framework exhibits high‐temperature ferroelectricity with strong magnetoelectric effects. Both electric field control of magnetization and magnetic field control of polarization are realized. Theoretical calculations suggest that a new mechanism of hybrid improper ferroelectricity arising from the Jahn–Teller distortions of magnetic metal ions and tilting of the organic cations are responsible for the peculiar multiferroic behaviors.
20.
Phosphorus prefers three‐connected configurations due to its inequivalent sp3‐hybridization. In the past year, many quasi two‐dimensional three‐connected networks were proposed as possible phosphorene allotropes. In this Letter, a new quasi two‐dimensional three‐connected network is proposed as a new potential phosphorene allotrope (Hex‐star). Based on first‐principles method calculations, the structure, stability and electronic properties of Hex‐star were systematically investigated. Our results indicate that Hex‐star is dynamically stable and it is a semiconductor with quasi‐direct band gap of 1.81 eV based on HSE06 method. Perspective top view (left) and Magen–David‐like orthographic top view (right) of Hex‐star phosphorene.