Photocatalytic activity of α‐PbO2‐type TiO2

The α‐PbO₂‐type TiO₂ is synthesized under high‐pressure and high‐temperature environment and it shows higher photocatalytic activity as compared to rutile and anatase under UV irradiation. The reduction in α‐PbO₂‐type TiO₂ induces visible‐light photocatalytic activity. These results indicate that α‐PbO₂‐type TiO₂ is an important candidate material for use in a photocatalytic matrix.

     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

Nonhydrogenic exciton spectrum in perovskite CH3NH3PbI3

The excitons in the orthorhombic phase of the perovskite CH₃NH₃PbI₃ are studied using the effective mass approximation. The electron–hole interaction is screened by a distance‐dependent dielectric function, as described by the Haken potential or the Pollmann–Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The results show that the Pollmann–Büttner model, using the corresponding parameters obtained from ab initio calculations, provides better agreement with the experimental results.

     

First‐principle investigations of the peculiar magnetic behavior of Sr2FeOsO6

Structural, electronic and magnetic properties of Sr₂FeOsO₆ have been revisited by using the first‐principle calculations. Semiconducting behavior is reproduced. The band gap is 0.09 eV from generalized gradient approximation (GGA) and 0.30 eV by considering both SOC and U, a bit larger than the experimental observed 0.125 eV. In the C‐type antiferromagnetic configuration, spin frustration is found by analysing the magnetic exchange parameters, explaining the experimental observed magnetic complexity.

     

P‐type tin‐oxide thin film transistors for blue‐light detection application

We reported the characteristics of p‐type tin‐oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p‐type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue‐light with a high light/dark read current ratio (I_light/I_dark) of 8.2 × 10³ at a very low driven voltage of <3 V. Since sensing of blue‐light radiation is very critical to our eyes, the proposed p‐type SnO TFTs with high sensitivity toward the blue‐light show great potential for future blue‐light detection applications.

     

Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors

Metal–insulator–metal capacitors (MIMCAP) with stoichiometric SrTiO₃ dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr‐rich STO seed layer, with the Ti‐rich STO top layer. The resulted stoichiometric SrTiO₃ would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr‐rich STO which allow further equivalent oxide thickness downscaling.

Schematic of MIMCAP with stoichiometric STO dielectric formed from bottom Sr‐rich STO and top Ti‐rich STO after intermixing during crystallization anneal.     

Bulk superconductivity in single‐phase Bi3O2S3

We report the synthesis of single‐phase Bi₃O₂S₃ sample and confirm the occurrence of bulk superconductivity with transition temperature at 5.8 K. The Bi₃O₂S₃ superconductor is categorized as typical type‐II superconductor based on the results of both temperature and magnetic field dependences of magnetization. Hall coefficient measurements give evidence of a multiband character, with a dominant conduction mainly by electron‐like charge carriers. The charge carrier density is about 1.45 × 10¹⁹ cm^–3, suggesting that the system has very low charge carrier density.

     

High‐mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

Pentacene thin‐film transistor with high‐κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm²/V s, much higher than that based on pure La₂O₃ (0.43 cm²/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine‐plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm²/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub‐threshold swing and lowest low‐frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM.

     

Fabrication of transparent and flexible carbon‐doped ZnO field emission display on plastic substrate

Transparent and flexible carbon doped ZnO (C:ZnO) field emission device was successfully fabricated on an arylite substrate. Excellent adhesion of deposited C:ZnO on the flexible substrate was achieved with low sputtering power and Ar flow rate. In the fabricated device, nanostructured C:ZnO and as‐deposited thin films were used as field emitter and phosphor screen, respectively. The C:ZnO thin film showed a transparency of about 80% at 550 nm wavelength and average sheet resistance of 1.96 kΩ/□. The C:ZnO phosphor screen emitted red light during the field emission measurement, correlating the dominant cathodoluminescence peak at 646 nm. Thus, a promising transparent and flexible field emission display can be realized with C:ZnO based material.

Transparent and flexible C:ZnO film phosphor screen (anode) and nanocone emitters (cathode) for field emission device.     

Magnetic properties of hard magnetic (Fe,Cr)3Sn2 intermetallic compound

By high‐throughput screening Fe–Sn–Cr, (Fe,Cr)₃Sn₂ (Fe_53.5Cr_6.5Sn₄₀) with high potential as new hard magnetic compound is discovered. To produce the compound in large amounts a special procedure is needed. By quantitative microscopy and magnetometry promising intrinsic properties, J_s ～ 0.9 T, K₁ ～ 1.7 MJ/m³, T_C ～ 612 K, are found with K₁ increasing with temperature.

     

Observation of negative refraction in the graphene/ferrite composite

An observation of negative refraction in the naturally obtained composition of graphene and barium ferrite is reported. The capacitance and inductance measurements revealed the electric and magnetic resonances accompanied with the negative values of permittivity and permeability in the overlapped frequency range. According to the “left‐handed” media approach such a material is characterized by negative refraction. The derived values of the real part of refractive index are negative at the frequencies above 500 MHz.

     

Electronic structure of formamidinium ions in lead triiodide perovskites

Perovskite formamidinium lead triiodide (FAPbI₃) is a very promising photovoltaic material. Unfortunately, perovskite FAPbI₃ converts to a hexagonal phase at ambient conditions. Herein we study the electronic structure of both perovskite and hexagonal FAPbI₃ films using soft X‐ray absorption near edge structure (XANES) and density functional theory. We find that the C and N 2p states of FA hybridize with the Pb, I states at the conduction band minimum in hexagonal, but not perovskite, FAPbI₃. We also demonstrate that C K‐edge XANES can be used to investigate shifts in the valence band in other organic‐inorganic hybrid perovskites.

Graphical summary of the electronic structure and C K‐edge XANES in both perovskite and hexagonal FAPbI₃ highlighting our findings.     

Efficient synthesis and tailoring of magnetic and dielectric properties of Pb‐free perovskite‐like ABX3 metal‐organic frameworks

Perovskite‐like metal‐organic frameworks (MOFs) are hybrid materials of high interest for their potential in information storage technology, as Pb‐free substitutes for the widely used lead zirconate titanate (PZT) family of multiferroics. We report here a new, microwave‐assisted method of synthesis for perovskite‐like MOFs, which exploits the advantages of rapid and volumetric heating by microwaves in order to achieve synthesis within minutes, compared to days required by previously reported methods. The preliminary results demonstrate a broad control over the size and morphology of the products, by minor changes in the reaction conditions. An investigation of the effects of size and morphology on the magnetic and dielectric properties is presented here.

     

Whispering gallery modes in intrinsic TiO2 microspheres coupling to the defect‐related photoluminescence after visible excitation

Defect‐caused visible photoluminescence after visible excitation in anatase TiO₂ microresonators couples to whispering gallery modes (WGMs). Spherical anatase TiO₂ of a radius between 1.5 µm and 4 µm have been prepared by a sol–gel technique based on hydrolysis of titanium tetrabutoxide. The observation of WGMs in intrinsic anatase TiO₂ without additional dopant offers new perspectives for the localisation of light at TiO₂ surfaces for the design of photocatalysts.

WGMs show up as narrow peaks in the photoluminescence spectra of TiO₂ microparticles after visible excitation.     

First‐principles prediction of a novel hexagonal phosphorene allotrope

Phosphorus prefers three‐connected configurations due to its inequivalent sp³‐hybridization. In the past year, many quasi two‐dimensional three‐connected networks were proposed as possible phosphorene allotropes. In this Letter, a new quasi two‐dimensional three‐connected network is proposed as a new potential phosphorene allotrope (Hex‐star). Based on first‐principles method calculations, the structure, stability and electronic properties of Hex‐star were systematically investigated. Our results indicate that Hex‐star is dynamically stable and it is a semiconductor with quasi‐direct band gap of 1.81 eV based on HSE06 method. Perspective top view (left) and Magen–David‐like orthographic top view (right) of Hex‐star phosphorene.

     

Probing Dy3+ magnetic moments in multiferroic perovskite DyMnO3 by optical spectroscopy

We present a detailed temperature‐dependent (4–300 K) spectroscopic study of DyMnO₃ single crystals with distorted perovskite structure. Energies of 36 crystal‐field levels of Dy³⁺ in paramagnetic DyMnO₃ were determined. The Dy³⁺ ground Kramers doublet does not split at and splits below T_lock = 18 K. The splitting grows fast at temperatures near and reaches Δ₀ ≈ 11 ± 2 cm^–1 at 4 K. Using the experimental temperature dependence Δ₀(T), we calculate the dysprosium magnetic moment m_Dy(T) and the dysprosium contribution into specific heat and magnetic susceptibility. Analysing all the experimental data, we conclude that the Dy–Mn interaction is of the Dzyaloshinskii–Moriya type.

Intensity map in the temperature–wave number coordinates for a spectral line corresponding to the f–f transition of Dy³⁺ in DyMnO₃ and a scheme of the splitting of the Dy ground Kramers doublet. Arrows represent Dy magnetic moments.     

Transition absorption as a mechanism of surface photoelectron emission from metals

Transition absorption of a photon by an electron passing through a boundary between two media with different permittivities is described both classically and quantum mechanically. Transition absorption is shown to make a substantial contribution to photoelectron emission at a metal/semicon‐ductor interface in nanoplasmonic systems, and is put forth as a possible microscopic mechanism of the surface photoelectric effect in photodetectors and solar cells containing plasmonic nanoparticles.

     

MOCVD synthesis of compositionally tuned topological insulator nanowires

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub‐micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi‐, Se‐, and Te‐bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi₂Se₃ to Bi₂Te₃, including the ternary compound Bi₂Te₂Se. These high quality nanostructured TI compounds are suitable platforms for on‐going searches for Majorana fermions (Mourik et al., Science 336 , 1003 (2012) and Cook et al., Rev. B 86 , 155431 (2012) [1, 2]).

     

Thermally‐activated post‐growth dewetting of fullerene C60 on mica

Understanding and controlling the growth and stability of molecular thin films on solid surfaces is necessary to develop nanomaterials with well‐defined physical properties. As a prominent model system in organic electronics, we investigate the post‐growth dewetting kinetics of the fullerene C₆₀ on mica with real‐time and in situ X‐ray scattering. After layer‐by‐layer growth of C₆₀, we find a thermally‐activated post‐growth dewetting, where the smooth C₆₀‐layer breaks up into islands. This clearly shows that growth is kinetically limited before the system moves over an activation barrier into an energetically favored configuration. From the temperature‐dependent dewetting kinetics we find an effective activation barrier of 0.33 eV, which describes both the temperature‐dependent macroscopic changes in the surface morphology and the microscopic processes of inter‐ and intralayer diffusion during dewetting.