Colossal resistive switching behavior and its physical mechanism of Pt/<Emphasis Type="Italic">p</Emphasis>-NiO/<Emphasis Type="Italic">n</Emphasis>-Mg<Subscript>0.6</Subscript>Zn<Subscript>0.4</Subscript>O/Pt thin films

A heterojunction structure of p-NiO/n-Mg_0.6Zn_0.4O with an aim to tuning or improving the resistive switching properties was fabricated on Pt/TiO₂/SiO₂/Si substrates by the sol-gel spin-coating technique. The Pt/NiO/Mg_0.6Zn_0.4O/Pt heterojunction thin-film device shows excellent resistive switching properties, such as a reduced threshold current of 1 μA for device initiation, a small dispersion of reset voltage ranging from 0.54 to 0.62 V, long retention time and a high resistance ratio of high-resistance state to low-resistance state about six orders of magnitude. These results indicate that the resistive switching properties can be greatly improved by constructing the p-NiO/n-Mg_0.6Zn_0.4O heterojunction for nonvolatile memory applications. The physical mechanism responsible for colossal resistive switching properties of the heterojunction was analyzed based on interfacial defect effect and formation and rapture of conductive filaments.     

Interfacial charge transfer in WS<Subscript>2</Subscript> monolayer/CsPbBr<Subscript>3</Subscript> microplate heterostructure

Integration of heterogenous materials produces compelling physical phenomena and increased performance of optoelectronic devices. In this work, we integrate CsPbBr₃ microplate with WS₂ monolayer to investigate the interfacial carrier transfer mechanism in the heterojunction. The quenching of photoluminescence (PL) emission from CsPbBr₃ and WS₂ after heterostructure formation indicates efficient charge transfer in the junction. Low-temperature PL spectra reveal that the decreasing PL of WS₂ arises from the vanishing of biexcitons. Photodetection based on the WS₂/CsPbBr₃ heterostructure is demonstrated. The higher performance from the junction further certifies the occurrence of charge transfer in the heterojunction.     

High-pressure neutron diffraction study of BaFe<Subscript>2</Subscript>As<Subscript>2</Subscript>

The crystal structure of BaFe₂As₂ was studied by high-pressure neutron powder diffraction in the pressure range from ambient to 6.5 GPa as well as in the temperature range from 12 K to 293 K at 4.4 GPa and no pressure or temperature induced phase changes were observed. The compression mechanism of BaFe₂As₂ was found to be anisotropic as the a- and c-axes are reduced by 2.49 and 3.66%, respectively at 6.5 GPa. Within the FeAs layers the Fe-As and Fe-Fe bonds decrease by 2.49 and 3.66%, respectively. The Ba-As distance decreases by 3.70% while the As-As inter-atomic distance along the c-axis exhibits a complex pressure dependence. The bulk modulus B ₀ and its pressure derivative B ₀' were determined to be B ₀ = 59(2) GPa and B ₀' = 6.1(7) at ambient temperature.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

A facile in situ solvothermal method for two-dimensional layered g-C<Subscript>3</Subscript>N<Subscript>4</Subscript>/SnS<Subscript>2</Subscript> p-n heterojunction composites with efficient visible-light photocatalytic activity

To overcome the fast recombination rate of electron-hole pairs of individual SnS₂, p-n heterojunction g-C₃N₄/SnS₂ composites were fabricated as high-efficiency visible-light photocatalyst to photodegradate the organic dye MB. The morphologies, structures, compositions, and photocatalytic properties were characterized. The SnS₂ shows two-dimensional layer structure with an average thickness of 20 nm and diameter size of about 2 μm, and the g-C₃N₄ nanoflakes were uniformly deposited on the surface of SnS₂ nanosheets. In comparison with the bare g-C₃N₄ and SnS₂, the composites show improved photocatalytic activity under visible light, which is sensitive to the content of g-C₃N₄. In particular, the 15% g-C₃N₄/SnS₂ composites exhibit the highest photocatalytic activity and outstanding reusability, which can degrade 88.01% MB after only 1 h in the visible light (λ?>?420 nm) range. The g-C₃N₄/SnS₂ heterojunction composites show outstanding reusability after four times cycling experiments. The improved photocatalytic activities of composites are attributed to abundant active species, increased charge separation, and decreased electron-hole pair recombination, which originated from the large specific surface area and efficient interfacial transport of photo-induced charge carriers between SnS₂ and g-C₃N₄. These results suggest that the two-dimensional layered g-C₃N₄/SnS₂ p-n heterojunction composites are promised to be a high-efficiency visible-light photocatalyst.     

Impedance spectroscopy study of Pb<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript> compound

The lead pyrophosphate, Pb₂P₂O₇, compound was prepared by conventional solid-state reaction and identified by X-ray powder diffractometer. Pb₂P₂O₇ has a triclinic structure whose electrical properties were studied using impedance spectroscopy technique. Both impedance and modulus analysis exhibit the grain and grain boundary contribution to the electrical response of the sample. The temperature dependence of the bulk and grain boundary conductivity were found to obey the Arrhenius law with activation energies E _g = 0.66 eV and E _gb = 0.67 eV, respectively. The scaling behavior of the imaginary part of the complex impedance suggests that the relaxation describes the same mechanism at various temperatures.     

The interfacial properties of SrRuO<Subscript>3</Subscript>/MoS<Subscript>2</Subscript> heterojunction: a first-principles study

First-principles calculation was used to study the interfacial properties of theSrRuO₃ (1 1 1)/MoS₂(√3 × √3) heterojunction. It is found that the huge magneticmoments in of monolayer MoS₂ largely originate from the Ru-S hybridization for theRu-terminated interface. Moreover, for the SrO-terminated interface, we studied mainly themetal and semiconductor contact characteristic. The calculated results show that theSchottky barrier height can be significantly reduced to zero for the SrO-terminatedinterface. Schottky barrier heights dominate the transport behavior of theSrRuO₃/MoS₂ interface. Our results not only have potentialapplications in spintronics devices, but also are in favour of the scaling of field effecttransistors.     

Dielectric relaxation and ionic conductivity studies of Ag<Subscript>2</Subscript>ZnP<Subscript>2</Subscript>O<Subscript>7</Subscript>

The complex impedance of the Ag₂ZnP₂O₇ compound has been investigated in the temperature range 419–557 K and in the frequency range 200 Hz–5 MHz. The Z′ and Z′ versus frequency plots are well fitted to an equivalent circuit model. Dielectric data were analyzed using complex electrical modulus M* for the sample at various temperatures. The modulus plot can be characterized by full width at half-height or in terms of a non-exponential decay function f( \textt ) = exp( - \textt/t )^b \phi \left( {\text{t}} \right) = \exp {\left( { - {\text{t}}/\tau } \right)^\beta } . The frequency dependence of the conductivity is interpreted in terms of Jonscher’s law: s( w) = s_\textdc + \textAwⁿ \sigma \left( \omega \right) = {\sigma_{\text{dc}}} + {\text{A}}{\omega^n} . The conductivity σ _dc follows the Arrhenius relation. The near value of activation energies obtained from the analysis of M″, conductivity data, and equivalent circuit confirms that the transport is through ion hopping mechanism dominated by the motion of the Ag⁺ ions in the structure of the investigated material.     

Electrical characterization of the [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>][N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]ZnCl<Subscript>4</Subscript> compound

The [N(CH₃)₄][N(C₂H₅)₄]ZnCl₄ compound has been synthesized by a solution-based chemical method. The X-ray diffraction study at room temperature revealed an orthorhombic system with P2₁2₁2 space group. The complex impedance has been investigated in the temperature and frequency ranges 420–520 K and 200 Hz–5 MHz, respectively. The grain interior and grain boundary contribution to the electrical response in the material have been identified. Dielectric data were analyzed using the complex electrical modulus M ^* for the sample at various temperature. The modulus plots can be characterized by full width at half height or in terms of a non-exponential decay function ϕ(t) = exp[(−t/τ) ^β ]. The detailed conductivity study indicated that the electrical conduction in the material is a thermally activated process. The variation of the AC conductivity with frequency at different temperatures obeys the Almond and West universal law.     

Polarization modes in the Ba<Subscript>2</Subscript>Mg<Subscript>2</Subscript>Fe1<Subscript>2</Subscript>O<Subscript>22</Subscript> multiferroic

The spectra of complex permittivity of a Ba₂Mg₂Fe₁₂O₂₂ single crystal belonging to the family of Y-type hexaferrites have been measured over a wide temperature range (10–300 K) with the aim of determining the dynamic parameters of the phonon and magnetic subsystems in the terahertz and infrared frequency ranges (3–4500 cm⁻¹). A factor-group analysis of the vibrational modes has been performed, and the results obtained have been compared with the experimentally observed resonances. The oscillator parameters of all nineteen phonon modes of E _u symmetry, which are allowed by the symmetry of the Ba₂Mg₂Fe₁₂O₂₂ crystal lattice, have been calculated. It has been found that, at temperatures below 195 and 50 K, the spectral response exhibits new absorption lines due to magnetic excitations.     

High-temperature superconductors YBaCu<Subscript>2</Subscript>O<Subscript>5</Subscript> and Tl<Subscript>1.5</Subscript>BaCa<Subscript>2</Subscript>Cu<Subscript>2.5</Subscript>O<Subscript>8</Subscript> with a decreased content of heavy metals (Ba and Tl)

New high-temperature superconductors YBaCu₂O₅ and Tl_1.5BaCa₂Cu_2.5O₈ have been synthesized. They can be considered as a result of the removal of barium cuprate BaCuO₂ from YBa₂Cu₃O₇ and barium cuprate-tallate BaCu_0.5Tl_0.5O₂ from Tl₂Ba₂Ca₂Cu{ia3}O₁₀. The synthesized compounds contain a smaller amount of toxic Ba and Tl. Investigation of electrical conductivity has demonstrated that the values of T _c of synthesized materials are close to T _c of starting materials. The Meissner effect observed for these materials has confirmed their belonging to high-temperature superconductors.     

Magnetic phases in UNi<Subscript>2</Subscript>Si<Subscript>2</Subscript>

The tetragonal compound UNi₂Si₂ exhibits in zero magnetic field three different antiferromagnetic phases belowT _N =124 K. They are formed by ferromagnetic basal planes, which are antiferromagnetically coupled along thec-axis with the propagation vectorq=(0, 0, q _z ). Two additional order-order magnetic phase transitions are observed below T _N , namely atT ₁=108 K and T ₂=40 K in zero magnetic field. All three phases exhibit strong uniaxial anisotropy confining the U moments to a direction parallel to the c-axis. UNi₂Si₂ single crystals were studied in detail by measuring bulk thermodynamic properties, such as thermal expansion, resistivity, susceptibility, and specific heat. A microscopic study using neutron diffraction was performed in magnetic fields up to 14.5 T parallel to the c-axis, and a complex magnetic phase diagram has been determined. Here, we present the analysis of specific-heat data measured in magnetic fields up to 14 T compared with the results of the neutron-diffraction study and with other thermodynamic properties of UNi₂Si₂.     

First-principle study of the electronic structure and magnetism in RuSr<Subscript>2</Subscript>GdCu<Subscript>2</Subscript>O<Subscript>8</Subscript> under pressure

We have performed a first-principle calculation of the structural, electronic and high pressure properties of RuSr₂GdCu₂O₈, a ferromagnetic superconductor, by employing a full-potential linearized augmented plane-wave method within the density-functional theory. The effect of pressure was achieved by varying the volume of the unit cell with constant a:b:c ratio. The experimentally observed anti-phase rotation of RuO₆ octahedra has been attributed to the residual forces on O_Ru which results in shear strain in the RuO₂ layer. Partial charge analysis shows that applying pressure up to 6 GPa leads to hole creation in the CuO₂ sheets which causes increase in the superconducting transition temperature. We have estimated the Curie temperature T _M of this compound in the mean-field approximation using Heisenberg model with first-nearest neighbor exchange interactions determined from DFT calculations for parallel and anti-parallel spin configurations of Ru moment in RuO₂ planes. The effect of pressure causes the magnetic moment of Ru atoms to decrease due to the increase of hybridization between the adjacent Ru atoms. The calculated exchange splitting in Cu d _{x 2 - y 2} states increases slightly with pressure but it is still very small that it does not affect superconductivity, and the hole doping mechanism is dominant.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Synergistic effect of Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> and CeO<Subscript>2</Subscript> co-modified titanate nanosheet heterojunction on enhanced photocatalytic degradation

CeO₂ and Fe₂O₃ co-modified titanate nanosheet (Fe₂O₃/CeO₂@TNS) was prepared by one-pot hydrothermal method; the photocatalyst exhibited large surface area with CeO₂ and Fe₂O₃ particles well dispersed on the surface. The results of XRD, BET, and Raman proved that the CeO₂ and Fe₂O₃ introduced in the TNS influenced its structure evolution from 3D to 2D. The modification resulted in a shift of the absorption edge toward a longer wavelength and the band gap reduced to 2.87 eV. The three-component systems performed excellent photocatalytic activity and cycle stability on phenol and methyl blue (MB) solution under sunlight; nearly total phenol and MB were degraded in dozens of minutes. And the reaction rate constant (K) of Fe₂O₃/CeO₂@TNS on phenol degradation was 1.77, 3.25, 4.88, and 13-fold of Fe₂O₃@TNS, CeO₂@TNS, bare TNS, and P25, respectively. The enhanced photocatalytic activity could be ascribed to the efficient separation of photogenerated pairs through the formation of tandem n-n-n heterojunction among the three-component systems. This work will be useful for the design of other tandem n-n-n heterojunction photocatalytic systems for application in energy conversion and environmental remediation.

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Interaction of carbon monoxide with In<Subscript>2</Subscript>O<Subscript>3</Subscript> and In<Subscript>2</Subscript>O<Subscript>3</Subscript>-Au nanocomposite

This is an IR spectroscopic study of the interaction of CO with In₂O₃ and the nanocomposite In₂O₃-Au. A mechanism for low-temperature detection of CO on nanocomposite In₂O₃-Au can be determined from these data. This process includes catalytic oxidation of CO through formation of intermediate complexes involving hydroxyl groups of In₂O₃.     

Crystal structure and magnetic anisotropy of ludwigite Co<Subscript>2</Subscript>FeO<Subscript>2</Subscript>BO<Subscript>3</Subscript>

Co₃O₂BO₃ and Co₂FeO₂BO₃ single crystals with a ludwigite structure are fabricated, and their crystal structure and magnetic properties are studied in detail. Substituted ludwigite Co₂FeO₂BO₃ undergoes two-stage magnetic ordering at the temperatures characteristic of Fe₃O₂BO₃ (T _N1 ≈ 110 K, T _N2 ≈ 70 K) rather than Co₃O₂BO₃ (T _N = 42 K). This effect is explained in terms of preferred occupation of nonequivalent crystallographic positions by iron, which was detected by X-ray diffraction. Both materials exhibit a pronounced uniaxial magnetic anisotropy. Crystallographic direction b is an easy magnetization axis. Upon iron substitution, the cobalt ludwigite acquires a very high magnetic hardness.     

Electron transport and anisotropy of the upper critical magnetic field in Ba<Subscript>0.68</Subscript>K<Subscript>0.32</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> single crystals

Early work on the iron-arsenide compounds supported the view, that a reduced dimensionality might be a necessary prerequisite for high-T _c superconductivity. Later, however, it was found that the zero-temperature upper critical magnetic field, H _c2(0), for the 122 iron pnictides is in fact rather isotropic. Here, we report measurements of the temperature dependence of the electrical resistivity, ρ(T), in Ba_0.5K_0.5Fe₂As₂ and Ba_0.68K_0.32Fe₂As₂ single crystals in zero magnetic field and in Ba_0.68K_0.32Fe₂As₂ in static and pulsed magnetic fields up to 60 T. We find that the resistivity of both compounds in zero field is well described by an exponential term due to inter-sheet umklapp electron-phonon scattering between light electrons around the M point to heavy hole sheets at the Γ point in reciprocal space. From our data, we construct an H-T phase diagram for the inter-plane (H | c) and in-plane (H | ab) directions for Ba_0.68K_0.32Fe₂As₂. Contrary to published data for 122 underdoped FeAs compounds, we find that H _c2(T) is in fact anisotropic in optimally doped samples down to low temperatures. The anisotropy parameter, γ = H _c2 ^ab /H _c2 ^c , is about 2.2 at T _c . For both field orientations we find a concave curvature of the H _c2 lines with decreasing anisotropy and saturation towards lower temperature. Taking into account Pauli spin paramagnetism, we perfectly can describe H _c2 and its anisotropy.     

Electrical properties,equivalent circuit,and dielectric relaxation studies on [(C<Subscript>3</Subscript>H<Subscript>7</Subscript>)<Subscript>4</Subscript>N]<Subscript>2</Subscript>Cd<Subscript>2</Subscript>Cl<Subscript>6</Subscript> polycrystalline

The Ac electrical conductivity and the dielectric relaxation properties of the [(C₃H₇)₄N]₂Cd₂Cl₆ polycrystalline sample have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 209 Hz–5 MHz and 361–418 K, respectively. The purpose is to make a difference between the electrical and dielectric properties of the polycrystalline sample and single crystal. Besides, a detailed analysis of the impedance spectrum suggests that the electrical properties of the material are strongly temperature-dependent. Plots of (Z" versus Z') are well fitted to an equivalent circuit model consisting of a series combination of grains and grains boundary elements. Moreover, the temperature dependence of the electrical conductivity in the different phases follows the Arrhenius law and the frequency dependence of σ (ω) follows the Jonscher’s universal dynamic law. Furthermore, the modulus plots can be characterized by full width at half height or in terms of a nonexperiential decay function φ(t) = exp(t/t)^β. Finally, the imaginary part of the permittivity constant is analyzed with the Cole–Cole formalism.     

Polarization processes in BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> and SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics in infralow-frequency fields

The dielectric nonlinearity in BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ layered ceramics was studied by measuring their polarization loops and reverse dependences of permittivity. It was shown that the features of the dielectric response of BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ in strong fields can be explained by glass-like properties and the contribution of the domain structure of the ferroelectric material to repolarization processes, respectively.