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1.
We have studied the Exchange Bias (EB) effect in nanocomposite films consisting of Fe nanoparticles (mean size ∼1.9 nm) embedded in an antiferromagnetic Mn matrix. They were produced by co-deposition through a gas aggregation cluster source and molecular beam epitaxy and have different Fe volume filling fractions (2.2% and 24.8%). The exchange field, higher in the sample with higher Fe concentration (at T=5 K, Hex∼460 Oe for 24.8% and ∼310 Oe for 2.2% ), in both the samples decreases with increasing T, finally disappearing at T∼40 K. The EB properties have been studied in conjunction with results on the thermal dependence of the magnetic coercivity, zero-field-cooled and field-cooled magnetization and thermoremanence. The different Fe content strongly affects the magnetothermal properties, featuring superparamagnetic relaxation in the diluted sample and a reentrant ferromagnet-type transition in the concentrated one. Hence, the EB properties of the two samples have been discussed in consideration of such peculiarities of the magnetic behavior and highlighting the role of the Mn matrix.  相似文献   

2.
3.
Magnetic properties of the group II–V semiconductor CdSb single crystals doped with Ni (2 at%) are investigated. Deviation of the zero-field-cooled susceptibility, χZFC, from the field-cooled susceptibility is observed below 300 K, along with a broad maximum of χZFC (T) at Tb in fields below the anisotropy field BK∼4 kG. Tb(B) obeys the law [Tb(B)/Tb(0)]1/2=1–B/BK with Tb(0)∼100 K. The magnetization exhibits saturation above ∼20–30 kG, a weak temperature dependence and anisotropy of the saturation value Ms. The coercive field is much smaller then BK and displays anisotropy inverted with respect to that of Ms. Such magnetic behavior is expected for spheroidal Ni-rich Ni1−xSbx nanoparticles with high aspect ratio, broad distribution of the sizes and with orientations of the major axis distributed around a preferred direction.  相似文献   

4.
Magnetic properties of Co nanoparticles of 1.8 nm diameter embedded in Mn and Ag matrices have been studied as a function of the volume fraction (VFF). While the Co nanoparticles in the Ag matrix show superparamagnetic behavior with TB=9.5 K (1.5% VFF) and TB=18.5 K (8.9% VFF), the Co nanoparticles in the antiferromagnetic Mn matrix show a transition peak at ∼65 K in the ZFC/FC susceptibility measurements, and an increase of the coercive fields at low temperature with respect to the Ag matrix. Exchange bias due to the interface exchange coupling between Co particles and the antiferromagnetic Mn matrix has also been studied. The exchange bias field (Heb), observed for all Co/Mn samples below 40 K, decreases with decreasing volume fraction and with increasing temperature and depends on the field of cooling (Hfc). Exchange bias is accompanied by an increase of coercivity.  相似文献   

5.
We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (Hc) values 192, 310 and 100 Oe and saturation magnetization (Ms) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10−3 Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10−1 Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.  相似文献   

6.
Crystallization in the melt-quenched (MQ) and mechanically milled (MM) superionic systems has been thoroughly investigated using differential scanning calorimetry, X-ray diffraction and electrical conductivity measurements. It is observed that the two systems obey different crystallization processes. The conventionally melt-quenched samples exhibit only one crystallization peak near 112 °C, whereas, the mechanochemically synthesized samples show two well-separated crystallization peaks at Tcl∼75-97 °C and Tc2∼132±2 °C. The higher value of electrical conductivity in the mechanochemically synthesized samples (∼10−2 Ω−1 cm−1 at 300 K) than the melt-quenched samples is attributed to the higher value of disorder (entropy) in the former.  相似文献   

7.
We have used X-ray diffraction, volume magnetocrystalline anisotropy constant and resistance measurements to study solid-state synthesis in Ni(0 0 1)/Fe(0 0 1), Ni/Fe(0 0 1) and Ni/Fe thin films with the atomic ratio between Fe and Ni of 1:1 (1Fe:1Ni), and 3:1 (3Fe:1Ni). We have found that the formation of Ni3Fe and NiFe phases in the 1Fe:1Ni films takes place at temperatures ∼620 and ∼720 K, correspondingly. In the case of the 3Fe:1Ni films the solid-state synthesis starts with Ni3Fe and NiFe phase formation at the same temperatures as for the 1Fe:1Ni films. The increasing of annealing temperature above 820 K leads to the nucleation of a paramagnetic γpar phase at the FeNi/Fe interface. The final products of solid-state synthesis in the Ni(0 0 1)/Fe(0 0 1) thin films are crystallites which consist of the epitaxially intergrown NiFe and γpar phases according to the [1 0 0](0 0 1)NiFe||[1 0 0](0 0 1)γpar orientation relationship. The crystalline perfection and epitaxial growth of the (NiFe+γpar) crystallites on the MgO(0 0 1) surface allow to distinguish (0 0 2)γpar and (0 0 2)NiFe X-ray peaks (the cell parameters are: a(γpar)=0.3600±0.0005 nm and a(NiFe)=0.3578±0.0005 nm, correspondingly). At low temperatures the paramagnetic γpar phase undergoes the martensite γpar→αγparα phase transition which can be hindered by thermal and epitaxial strains and epitaxial clamping with a MgO substrate. On the basis of the studies of the thin-film solid-state synthesis we predict the existence of two novel structural phase transformations at the temperatures of about 720 and 820 K for alloys of the invar region of the Fe–Ni system.  相似文献   

8.
The magnetic behavior of the FeInxCr2−xSe4 system (with x=0.0, 0.2 and 0.4) has been investigated by magnetic and Mössbauer spectroscopy. Hyperfine parameters indicate that iron is in the Fe2+ oxidation state, with a minor (∼9%) Fe3+ fraction, located at different layers in the structure. Low-field magnetization curves as a function of temperature showed that the antiferromagnetic (AFM) order temperature is TN=208(2) K for FeCr2Se4 and decreases to 174(3) K for FeIn0.4Cr1.6Se4. The effective magnetic moment μeff decreases with increasing In contents, and shows agreement with the expected values from the contribution of Fe2+ (5D) and Cr3+ (4F) electronic states. A second, low-temperature transition is observed at TG∼13 K, which has been assigned to the onset of a glassy state.  相似文献   

9.
Nanosized MgFe2O4-based ferrite powder having heat generation ability in an AC magnetic field was prepared by bead milling and studied for thermal coagulation therapy applications. The crystal size and the particle size significantly decreased by bead milling. The heat generation ability in an AC magnetic field improved with the milling time, i.e. a decrease in crystal size. However, the heat generation ability decreased for excessively milled samples with crystal sizes of less than 5.5 nm. The highest heat ability (ΔT=34 °C) in the AC magnetic field (370 kHz, 1.77 kA/m) was obtained for fine MgFe2O4 powder having a ca. 6 nm crystal size (the samples were milled for 6-8 h using 0.1 mm ? beads). The heat generation of the samples was closely related to hysteresis loss, a B-H magnetic property. The reason for the high heat generation properties of the samples milled for 6-8 h using 0.1 mm ? beads was ascribed to the increase in hysteresis loss by the formation of a single domain. Moreover, the improvement in heating ability was obtained by calcination of the bead-milled sample at low temperature. In this case, the maximum heat generation (ΔT=41 °C) ability was obtained for a ca. 11 nm crystal size sample was prepared by crystal growth during the sample calcination. On the other hand, the ΔT value for Mg0.5Ca0.5Fe2O4 was synthesized using a reverse precipitation method decreased by bead milling.  相似文献   

10.
Rare earth garnets after milling to nanosizes are found to decompose into rare earth orthoferrite and other rare earth and iron oxide phases. The magnetization for the yttrium iron garnet decreases in the nano state due to the formation of antiferromagnetic phases. But for the gadolinium iron garnet when milled up to 25 h, the room temperature magnetization increases despite the formation of antiferromagnetic and non-magnetic phases. This is attributed to the uncompensated moments of the sublattices because of the weakening of the superexchange interaction due to change in bond angles and the breaking of some superexchange bonds on account of the defects and oxygen vacancies introduced on milling. For the 10 h milled gadolinium iron garnet at 5 K, after correcting for the non-magnetic phases present, there is an increase in the magnetic moment of about 10% as compared to the value for the as-prepared garnet. The magnetic hyperfine fields corresponding to the various phases were measured using 57Fe Mössbauer spectroscopy at 16 K. The isomer shift values indicate the loss of oxygen for the samples milled for larger duration.  相似文献   

11.
Highly oriented films of ∼6 μm in thickness consisting of the Nd2Fe14B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd2Fe14B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of Br=∼1.06 T, HC=∼371 kA/m, and (BH)max=∼160 kJ/m3 were obtained under the optimized parameters for sputtering.  相似文献   

12.
In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, TC increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition Ts and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and Ts is ∼91 K.  相似文献   

13.
We synthesized the Mn-doped Mg(In2−xMnx)O4 oxides with 0.03?x?0.55 using a solid-state reaction method. The X-ray diffraction patterns of the samples were in a good agreement with that of a distorted orthorhombic spinel phase. Their lattice parameters and unit-cell volumes decrease with x due to the substitution of the smaller Mn3+ ions to the larger In3+ ions. The undoped MgIn2O4 oxide presents diamagnetic signals for 5 K?T?300 K. The M(H) at T=300 K reveals a fairly negative-sloped linear relationship. Neither magnetic hysteresis nor saturation behavior was observed in this parent sample. For the Mn-doped samples, however, positive magnetization were observed between 5 and 300 K even if the x value is as low as 0.03. The mass susceptibility enhances with Mn content and it reaches the highest value of 1.4×10−3 emu/g Oe (at T=300 K) at x=0.45. Furthermore, the Mn-doped oxides with x=0.06 and 0.2, respectively, exhibit nonlinear magnetization curves and small hysteretic loops in low magnetic fields. Susceptibilities of the Mn-doped samples are much higher than those of MnO2, Mn2O3 oxides, and Mn metals. These results show that the oxides have potential to be magnetic semiconductors.  相似文献   

14.
Polycrystalline Mn2VGa samples were synthesized using an arc furnace. X-ray diffraction (XRD) pattern was analyzed using General Structural Analysis System (GSAS) package and the refined lattice parameter was found to be 5.905 Å. We found magnetic ordering in the system below 783 K and the spontaneous magnetization was observed to be following the Bloch T3/2 law below 80 K. The magnetic moment per formula unit at 5 K was observed to be 1.88 μB. The temperature variation of the electrical resistance was found to follow the relation Rn=R0n+aTα (α=1.616) and (Rn—normalized electrical resistance) in the temperature range of 25–300 K and we observed almost a temperature independent variation of the electrical resistance below 25 K indicating the absence of spin-flip scattering.  相似文献   

15.
Measurements of the electrical conductivity were performed in KHSO4 at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (TTr) and of the melting (Tm), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of TTr and Tm are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO4 into K3H(SO4)2+H2SO4 (and probably into K5H3(SO4)4+H2SO4) affects the electrical conductivity of KHSO4, with the typical values of the protonic electrical conductivity, c. 10−1 S/cm at 2.5 GPa.  相似文献   

16.
Single-crystals of the new ferromagnetic superconductor UCoGe have been grown. The quality of as-grown samples can be significantly improved by a heat-treatment procedure, which increases the residual resistance ratio (RRR) from ∼5 to ∼30. Magnetization M(T) and resistivity ρ(T) measurements show the annealed samples have a sharp ferromagnetic transition with a Curie temperature TC is 2.8 K. The ordered moment of 0.06 μB is directed along the orthorhombic c-axis. Superconductivity is found below a resistive transition temperature Ts=0.65 K.  相似文献   

17.
For NiO nanorods of 5 nm diameter prepared by sol-gel technique, variations of the magnetization M with temperature T (5-370 K) and magnetic field H up to 55 kOe are reported. Also, temperature variations of the EMR (electron magnetic resonance) parameters (intensity I0, linewidth ΔH and resonance field Hr) of an observed line due to uncompensated spins are followed for The M vs. H and T variations yield a blocking above which the data fits modified Langevin function with magnetic moment μp?1240 μB/particle. For the EMR line, I0 decreases rapidly for T<TB, and the line broadens and shifts to lower H with lowering T, following the lineshift δHr=(ΔH)n with n?2.8. This is close to the value of n=3 expected for randomly oriented particles.  相似文献   

18.
19.
The magnetic properties of polycrystalline PrRh2Si2 sample have been investigated by neutron diffraction measurements. Antiferromagnetic transition with an anomalously high ordering temperature (TN∼68 K) is clearly observed in magnetic susceptibility, specific heat, electrical resistivity and neutron diffraction measurements. Neutron diffraction study shows that Pr3+ ions carry an ordered moment of 2.99(7)μB/Pr3+ and align along the crystallographic±c-directions for the ions located at the (0,0,0) and positions. The magnetoresistance at 2 K and 10 T is rather large (∼35%).  相似文献   

20.
We have investigated the magnetic and electrical transport properties of Si1−xMnx single crystals grown by the vertical Bridgman method. The alloys with Mn concentrations up to x=0.64 have weak ferromagnetic ordering around TC∼30 K. However, Si0.25Mn0.75 alloys show weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, which is confirmed by magnetization and electrical transport studies.  相似文献   

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