磁性硅烯超晶格中电场调制的谷极化和自旋极化

研究了基于硅烯的静电势超晶格、铁磁超晶格、反铁磁超晶格中谷极化、自旋极化以及赝自旋极化的输运性质,分析了铁磁交换场、反铁磁交换场以及化学势对输运性质的影响,讨论了电场对谷极化、自旋极化以及赝自旋极化的调控作用.结果表明:当3种超晶格的晶格数达到10以上时,在硅烯超晶格中很容易实现100%的谷极化、自旋极化和赝自旋极化,而且通过调节超晶格上的外加电场可以使极化方向发生翻转,从而在硅烯超晶格中实现外电场对谷自由度、自旋自由度以及赝自旋自由度的操控.     

Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.     

Spin and valley dependent line-type resonant peaks in electrically and magnetically modulated silicene quantum structures

A barrier with a tunable spin-valley dependent energy gap in silicene could be used as a spin and valley filter. Meanwhile, special resonant modes in unique quantum structure can act as energy filters. Hence we investigate valley and spin transport properties in the potential silicene quantum structures, i.e., single ferromagnetic barrier, single electromagnetic barrier and double electric barriers. Our quantum transport calculation indicates that quantum devices of high accuracy and efficiency (100% polarization), based on modulated silicene quantum structures, can be designed for valley, spin and energy filtering. These intriguing features are revealed by the spin, valley dependent line-type resonant peaks. In addition, line-type peaks in different structure depend on spin and valley diversely. The filter we proposed is controllable by electric gating.     

电子的谷自由度

电子在晶格周期性势场影响下的运动遵循布洛赫定理. 布洛赫电子除了具有电荷和自旋两个内禀自由度外, 还有其他内禀自由度. 能带色散曲线上的某些极值点作为谷自由度, 具有独特的电子结构和运动规律. 本文从布洛赫电子的谷自由度出发, 简单介绍传统半导体的谷电子性质研究现状, 并重点介绍新型二维材料体系, 如石墨烯、硅烯、硫族化合物等材料中谷相关的物理特性. 有效利用谷自由度的新奇输运特性, 将其作为信息的载体可以制作出新颖的纳米光电子器件, 并有望造就下一代纳电子器件的新领域, 即谷电子学(valleytronics).     

Charge,spin and valley pumping in silicene junction

The feasibility of generating polarized and unpolarized current in silicene by means of quantum pumping is discussed within the framework of Floquet scattering matrix. Charge pumping current is induced at zero magnetization splitting whereas spin and valley pumping current emerge when the symmetry between Dirac points K and K′ is broken. The intensity and direction of pumped current are shown to be dependent on pumping amplitude, phase between barriers, exchange energy and electric field. By careful control of external parameters, it is demonstrated that the ferromagnetic-silicene junction could be operated as a pump device that generates pure spin and valley pumping current.     

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.     

Goos–H?nchen-like shift related to spin and valley polarization in ferromagnetic silicene

We study the Goos–H?nchen-like shift of single silicene barrier under the external perpendicular electric field, offresonant circularly polarized light and the exchange field modulation using the stationary-phase method. The results show that the Goos–H?nchen-like shift of silicene resulting from the external perpendicular electric field does not have the characteristics of spin or valley polarization, while that from off-resonant circularly polarized light or the exchange field is spin-polarized. More importantly, the combined effect of the external perpendicular electric field and the exchange field or off-resonant circularly polarized light can cause the Goos–H?nchen-like shift of the system to be spin and valley polarized.It is particularly worth noting that when the three modulations are considered at the same time, as the exchange field changes, the system will have a positive or negative Goos–H?nchen-like shift.     

Tunable valley filter efficiency by spin–orbit coupling in silicene nanoconstrictions

Valley filter is a promising device for producing valley polarized current in graphene-like two-dimensional honeycomb lattice materials. The relatively large spin–orbit coupling in silicene contributes to remarkable quantum spin Hall effect, which leads to distinctive valley-dependent transport properties compared with intrinsic graphene. In this paper,quantized conductance and valley polarization in silicene nanoconstrictions are theoretically investigated in quantum spinHall insulator phase. Nearly perfect valley filter effect is found by aligning the gate voltage in the central constriction region. However, the valley polarization plateaus are shifted with the increase of spin–orbit coupling strength, accompanied by smooth variation of polarization reversal. Our findings provide new strategies to control the valley polarization in valleytronic devices.     

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene.In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance(TMR) effect.The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.     

Controllable spin-dependent transport in silicene superlattice

Based on the transfer-matrix method, we theoretically investigate the spin-dependent transport properties in magnetic silicene superlattice in the presence of extrinsic Rashba spin–orbit interaction (RSOI). It is found that the spin transmission probability and spin conductivities can be efficiently controlled by the number of magnetic barriers. As the number of magnetic barriers increases, spin conductivities strongly decrease, and reduce to zero in the large on-site potential difference between A and B sublattices (Δ_z) region. The results indicate that a magnetic silicene superlattice exhibits a remarkable wavevector-dependent spin filtering effect. Also, the magnetoresistance (MR) ratio exhibits an oscillatory behavior with the Fermi energy. The MR ratio can be tuned by the Fermi energy, number of magnetic barriers and extrinsic RSOI. Specifically, in the presence of magnetic field the spin polarization can be observed, and increases by increasing the magnetic field.     

Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

Probing anomalous longitudinal fluctuations of the interacting Bose gas via Bose-Einstein condensation of magnons

The emergence of a finite staggered magnetization in quantum Heisenberg antiferromagnets subject to a uniform magnetic field can be viewed as Bose-Einstein condensation of magnons. Using nonperturbative results for the infrared behavior of the interacting Bose gas, we present exact results for the staggered spin-spin correlation functions of quantum antiferromagnets in a magnetic field at zero temperature. In particular, we show that in dimensions 1相似文献   

Symmetry ensemble theory of spin wave emitting effectdriven by current in nanoscale magnetic multilayer

<正>This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves,in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble.The magnetization dynamics equation of the ensemble was developed.By analytically investigating the equation,many magnetization dynamics properties excited by polarized current reported in experiments,such as double spin wave modes and the abrupt frequency jump,can be successfully explained.It is pointed out that an external field is not necessary for spin wave emitting(SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field.     

Spin thermoelectricity in dualhydrogenated zigzag silicene nanoribbons with surface adsorptions

The buckled structure of silicene provides a feasible pathway to influence its electric and magnetic properties via surface adsorptions. Here, we investigate the magnetic and spin thermoelectric transport properties of dual-hydrogenated zigzag silicene nanoribbons (ZSiNRs) without/with the hydrogen adsorption. The band gaps for two spin channels in ZSiNRs under the hydrogen adsorption are shifted near the Fermi level, leading to the appearance of spin Seebeck effect. Using a temperature difference, one can derive the carriers with the different spin index to flow in the opposite direction. Moreover, a large rectification ratio close to 10⁵ at room temperature is achieved for the spin current, and the charge current exhibits a remarkable negative differential thermoelectric resistance (NDTR) behavior. The results presented here are fascinating potential applications in the fields of silicon-based spin caloritronic devices.     

Velocity modulation of electron transport through a ferromagnetic silicene junction

We address velocity-modulation control of electron wave propagation in a normal/ferromagnetic/normal silicene junc tion with local variation of Fermi velocity, where the properties of charge, valley, and spin transport through the junction ar investigated. By matching the wavefunctions at the normal-ferromagnetic interfaces, it is demonstrated that the variation of Fermi velocity in a small range can largely enhance the total conductance while keeping the current nearly fully valley and spin-polarized. Further, the variation of Fermi velocity in ferromagnetic silicene has significant influence on the valley and spin polarization, especially in the low-energy regime. It may drastically reduce the high polarizations, which can b realized by adjusting the local application of a gate voltage and exchange field on the junction.     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

金属表面Rashba自旋轨道耦合作用研究进展

自旋轨道耦合是电子自旋与轨道相互作用的桥梁, 它提供了利用外电场来调控电子的轨道运动、进而调控电子自旋状态的可能. 固体材料中有很多有趣的物理现象, 例如磁晶各向异性、自旋霍尔效应、拓扑绝缘体等, 都与自旋轨道耦合密切相关. 在表面/界面体系中, 由于结构反演不对称导致的自旋轨道耦合称为Rashba自旋轨道耦合, 它最早在半导体材料中获得研究, 并因其强度可由栅电压灵活调控而备受关注, 成为电控磁性的重要物理基础之一. 继半导体材料后, 金属表面成为具有Rashba自旋轨道耦合作用的又一主流体系. 本文以Au(111), Bi(111), Gd(0001)等为例综述了磁性与非磁性金属表面Rashba自旋轨道耦合的研究进展, 讨论了表面电势梯度、原子序数、表面态波函数的对称性, 以及表面态中轨道杂化等因素对金属表面Rashba自旋轨道耦合强度的影响. 在磁性金属表面, 同时存在Rashba自旋轨道耦合作用与磁交换作用, 通过Rashba自旋轨道耦合可能实现电场对磁性的调控. 最后, 阐述了外加电场和表面吸附等方法对金属表面Rashba自旋轨道耦合的调控. 基于密度泛函理论的第一性原理计算和角分辨光电子能谱测量是金属表面Rashba自旋轨道耦合的两大主要研究方法, 本文综述了这两方面的研究结果, 对金属表面Rashba自旋轨道耦合进行了深入全面的总结和分析.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

电流感应磁化翻转效应的改进的系综模型

运用宏观双通道扩散模型研究了赝自旋阀结构中的自旋相关输运过程,考虑到磁化强度矢量的横向分量的影响,建立了自由层磁化强度矢量的动力学方程,利用自旋流连续和化学势差连续作为边界条件.理论计算求解了电流感应磁化翻转效应中的临界电流,解释了铁磁层和非磁层电导率匹配问题和纵向场对电流感应磁化翻转效应中临界电流的影响. 关键词： 赝自旋阀 电导率匹配 自旋转移扭矩 电流感应磁化翻转效应     

Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures

Electron spin-dependent transport properties have been theoretically investigated in two-dimensional electron gas (2DEG) modulated by the magnetic field generated by a pair of anti-parallel magnetization ferromagnetic metal stripes and the electrostatic potential provided by a normal metal Schottky stripe. It is shown that the energy positions of the spin-polarization extremes and the width of relative spin conductance excess plateau could be significantly manipulated by the electrostatic potential strength and width, as well as its position relative to the FM stripes. These interesting features are believed useful for designing the electric voltage controlled spin filters.