高亮度注入器腔形径向电场的线性化

讨论了驻波腔内射频场力对电子束横向运动的影响，求出了使加速腔内径向电场线性化的阳极等位线方程。并给出了使径向电场Ｅ＿ｒ线性化的加速腔鼻锥设计所应遵循的原则，以及驻波腔径向电场线性化程度的判据。     

多腔谐振腔中渡越时间效应的线性理论

 以小信号条件下入射相位为φ0的单个电子在驻波电场中的运动为基础,研究了电子束在多腔谐振腔 π 模驻波场中的渡越时间效应,导出了多腔谐振腔的电子负载电导的表达式,讨论了腔数N对渡越时间效应的影响。     

三腔谐振腔渡越时间效应的小信号分析

 以小信号条件下入射相位为φ0的单个电子在驻波电场中的运动为基础,研究了电子束在三腔谐振腔π模驻波场中的渡越时间效应,导出了三腔谐振腔的电子负载电导的表达式,讨论了三腔谐振腔中束波能量交换情况。     

驻波加速管中的电子反轰现象

在以半腔为首腔的边耦合驻波加速管中观察到了电子反轰现象,由于电子反轰的结果,导致电于枪发射电流非正常增长。本文从纵向运动方程出发,用相轨道方法分析了驻波加速管中的电子反轰运动,并计算了不同电场分布、不同电场幅值及不同注入电压对电子反轰的影响。     

有限振幅驻波声场中的分岔实验研究

在一维有限振幅驻波声场中观察到了分岔现象。除了理论所预期的高次谐波存在外，次谐波、分数谐波亦存在于有限振幅驻波声场中。随基波声压级提高，最终达到混饨状态。     

相对论激光在Maxwell分布等离子体中产生的高次谐波

 研究了强激光与具有初始速度分布的等离子体作用产生的高次谐波。结果表明，对于Maxwell速度分布的等离子体，由于电子初始时刻的无规则热运动，在一定程度上抹平了辐射功率在谐波谱上的分布，使得高次谐波的辐射增强，低次谐波的辐射有所减弱，有利于高次谐波的产生。     

电子在激光驻波场中运动产生的太赫兹及X射线辐射研究

采用单电子模型和经典辐射理论分别对低能和高能电子在线偏振激光驻波场中的运动和辐射过程进行了研究. 结果表明: 垂直于激光电场方向入射的低速电子在激光驻波场中随着光强的增大, 逐渐从一维近周期运动演变为二维折叠运动, 并产生强的微米量级波长的太赫兹辐射; 高能电子垂直或者平行于激光电场方向入射到激光驻波场中, 都会产生波长在几个纳米的高频辐射; 低能电子与激光驻波场作用中, 激光强度影响着电子的运动形式、辐射频率以及辐射强度; 高能电子入射时, 激光强度影响了电子高频辐射的强度, 电子初始能量影响着辐射的频率; 电子能量越高, 产生的辐射频率越大. 研究表明可以由激光加速电子的方式得到不同能量的电子束, 并利用电子束在激光驻波场的辐射使之成为太赫兹和X射线波段的小型辐射源. 研究结果可以为实验研究和利用激光驻波场中的电子辐射提供依据.     

C波段磁绝缘线振荡器开放腔高频特性分析

 建立了C波段磁绝缘线振荡器开放腔模型，通过监测宽带激励源的响应计算出开放腔的谐振频率和有载品质因数。用时域有限差分法计算了不同的径向位置一个周期内的径向电场随纵向距离的变化。计算表明：0~4.1 cm区电场很小但不为零；4.1~11.5 cm区域电场呈现驻波特性；在11.5~20 cm区域电场分布比较复杂，表现两个性质，一是驻波场过渡到行波场，二是从周期性加载圆柱谐振腔的TM00模过渡到同轴线的TEM模；在20~36.85 cm区域电场每经过1/4周期向右传播1/4波长，表现出行波特性。由此根据该计算结果将开放腔中的场从左到右分成4个区：截止区、驻波区、过渡区和行波区。最后根据定义计算了开放腔的固有品质因数和有载品质因数。     

电子束发射度变化的解析估计

本文使用一般包络方程理论推导出轴对称电子束在傍轴近似下的稳态传输过程中的发射度变化公式。结果表明电子束发射度变化与引导磁场及离子通道电场无直接关系,而仅仅与电子束分布的变化有关;发射度变化的本质是电子束的静电势能和横向运动的动能之间的转换。本文的解析结果与数值模拟结果符合得相当好。本文还定性讨论了电子束平均正则角动量对发射度变化的影响。     

腔内I类非临界相位匹配倍频LBO温度分布对转化效率的影响

在腔内倍频激光器中,非线性晶体的温度梯度造成的相位失配是影响谐波转化效率的关键.用半解析热分析方法得出了非线性晶体LBO在不同基频光参量条件下的温度分布,分析了不同参量对晶体温度分布的影响.分析了温度梯度引起的相位失配对谐波转化总效率的影响,并在不同参量情况下对谐波相对转化效率进行了计算.对腔内倍频激光系统的设计有指导...     

Asymptotic Behavior of the Quantum Harmonic Oscillator Driven by a Random Time-Dependent Electric Field

This paper investigates the evolution of the state vector of a charged quantum particle in a harmonic oscillator driven by a time-dependent electric field. The external field randomly oscillates and its amplitude is small but it acts long enough so that we can solve the problem in the asymptotic framework corresponding to a field amplitude which tends to zero and a field duration which tends to infinity. We describe the effective evolution equation of the state vector, which reads as a stochastic partial differential equation. We explicitly describe the transition probabilities, which are characterized by a polynomial decay of the probabilities corresponding to the low-energy eigenstates, and give the exact statistical distribution of the energy of the particle.     

Avron–Herbst Type Formula in Crossed Constant Magnetic and Time-Dependent Electric Fields

In this paper, we give an Avron?CHerbst type formula for the propagator generated by the free Hamiltonian with crossed constant magnetic and time-dependent electric fields. As an application of the formula, we give a result of the existence of the wave operators under some appropriate conditions on the time-dependent electric field and the potential. Finally, in the case where the electric field is time-independent, we consider the problem of the asymptotic completeness of the wave operators.     

Direct calculation of time varying Aharonov-Bohm effect

The Aharonov-Bohm effect (ABE) for steady magnetic fields is a well known phenomenon. However, if the current in the infinite solenoid that creates the magnetic field is time-dependent, that is in the presence of both magnetic and electric fields, there is no agreement whether the effect would be present. In this note, we try to investigate time varying ABE by a direct calculation in a set-up with a weak time dependent magnetic field. We find that the electric field arising out of the time-varying magnetic field in the path of the electrons does not enter the action integral but only changes the path of the electron from the source to the slits and then on to the detector. We find a frequency dependent AB phase shift. At low frequencies the result smoothly approaches the one for a constant field as the frequency tends towards zero. On the other hand, for high frequencies such that the AB-phase induced in the path of the wave packet oscillates rapidly, the net effect will be very small which is borne out by our results.     

Geometric theory of Stark resonances in multielectron systems

In this paper we consider a class of many-body systems in a weak homogeneous electric field. This class includes atoms and molecules with infinitely heavy nuclei. It follows from one of the results of this paper and a result of [S 3] that the bound states of such systems in the absence of electric field turn into resonances (which we call the Stark resonances) as soon as the electric field is switched on. (The stability part of this result was earlier proven in [HeSi] (see also [Hu 2]) under an assumption of dilation analyticity.) The main result of this paper is exponential bounds on the width (and therefore the lower exponential bounds on the life-time) of the Stark resonances. These bounds are given in terms of the Stark instanton action. In contrast to the usual (one body) action the latter is not entirely classical but incorporates certain quantum data (like ionization energies). The bounds give a partial generalization to the many electron case of the well-known Oppenheimer formula for the hydrogen.Research support by NSERC under grant NA 7901     

Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine＇s ground state energy （-1/4 effective Rydberg） when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.     

稀薄等离子体中超辐射的发展过程及相干特性

用量子Ｍａｘｗｅｌｌ－ＢｌｏｃｈＣ－数方程讨论了存在均匀消相阻尼的一维稀薄等离子体系统中电场和极化的发展过程及相干特性，给出了线性阶段的解析结果和非线性阶段的数值结果。数值结果显示了电场和极化的发展过程及随机源对它们的影响。最后给出了电场和极化的相干度及自由电子对相干度的影响。当等离子体频率远小于辐射频率时，自由电子的作用可以忽略。     

Characterization techniques for a MEMS electric-field sensor in vacuum

An accurate calibration of an electric-field sensor is difficult to carry out due to challenges involved in generating a uniform electric field over the sensor volume. Additionally, capacitive coupling between the field source and the sensors and related instrumentation tends to distort the measured field further. Sensor characterization includes not only calibration, but also determination of the frequency response (both magnitude and phase), noise power spectral density, dynamic range, and linearity. In this paper, we discuss characterization techniques for an unpackaged microelectromechanical systems (MEMS) electric field sensor in a vacuum chamber. The use of oppositely charged square plates at a spacing of half the plate width is advised by the IEEE 1308-1994 standard for generation of a uniform electric field. Previously, the U.S. Army Research Laboratory (ARL) has shown that by employing guard tubes in the construction of an electric field generating chamber, the fringing fields can be controlled, and the spacing between the endplates can be increased while maintaining a uniform field. A similar, smaller apparatus for generating a uniform axial electric field was constructed to fit into a vacuum bell jar. The considerations and techniques for minimizing error due to fringing and distortion from metal conductors will be presented, along with the techniques and laboratory equipment used for characterizing the sensor.     

On Electron–Positron Pair Production by a Spatially Inhomogeneous Electric Field

A detailed analysis of electron–positron pair creation induced by a spatially non-uniform and static electric field from vacuum is presented. A typical example is provided by the Sauter potential. For this potential, we derive the analytic expressions for vacuum decay and pair production rate accounted for the entire range of spatial variations. In the limit of a sharp step, we recover the divergent result due to the singular electric field at the origin. The limit of a constant field reproduces the classical result of Euler, Heisenberg and Schwinger, if the latter is properly averaged over the width of a spatial variation. The pair production by the Sauter potential is described for different regimes from weak to strong fields. For all these regimes, the locally constant-field rate is shown to be the upper limit.     

电力系统动模实验用50kJ高温超导储能磁体的设计研究

介绍了 2 0 K下对电力系统动模实验用 5 0 k J高温超导储能磁体的设计步骤 ,给出了用 Bi- 2 2 2 3单根超导带进行5 0 k J磁体线圈的设计和优化结果 ,分析了高温超导体的各向异性对磁体临界电流的影响和磁体漏磁的分布 ,并讨论了用单根高温超导带组成的超导体和用多根高温超导带组成的超导体设计的储能磁体的特性参数对改善电力系统动态特性的能力的影响。     

Ionization and recombination in intense, short electric field pulses

We investigate ionization and excitation of H(1s) in the limit of very short electric field pulses, analytically and numerically and both in the limit of small and extremely large peak electric fields. We identify a process of recombination akin to Rabi flopping from the continuum and give an analytic expression for this process after a single-cycle strong-field pulse.