Phase diagram of (1−x%)(0.89Bi0.5Na0.5TiO3–0.06BaTiO3–0.05K0.5Na0.5NbO3)–x%MnO2 lead-free anti-ferroelectric ceramics

A phase diagram for the lead-free ceramics in the (1?x%)(0.89Bi_0.5Na_0.5TiO₃–0.06BaTiO₃–0.05K_0.5Na_0.5NbO₃)–x%MnO₂ (BNBKN-x%Mn) binary system is constructed for the first time based on the ferroelectric and dielectric measurements. The ferroelectric behaviors under different temperatures suggest that the ceramics are basically of relaxor anti-ferroelectric nature near room temperature. The temperature dependent dielectric properties show that when the addition of MnO₂ increases, the relaxor anti-ferroelectric phase can be stabilized to be close to the Curie point, which corresponds to a relaxor anti-ferroelectric to paraelectric phase transition.     

Relaxor behavior in the (1−x)BaSnO3 - xPbTiO3 solid solution

The relaxor behavior was revealed in the solid solution (1−x)BaSnO₃-xPbTiO₃[(1−x)BSn-xPT] with compositions near x=0.50. The real permittivity (ε^′) and loss tangent (tanδ) exhibit diffuse and dispersive maxima, whose temperature shifts towards a higher temperature upon the increasing frequency. The frequency dependence of the temperature of the dielectric maximum (T_m) follows the Vogel-Fulcher law, as in the canonical relaxor. A deviation from the Curie-Weiss law was observed below the Burns temperature (T_B) and well above the Curie temperature (T_C). These phenomena are well consistent with typical relaxors, which explains the existence of the relaxor behavior in the (1−x)BSn-xPT solid solution.     

A Raman and dielectric study of ferroelectric ceramics

Dielectric and Raman scattering experiments were performed on various ceramics with composition Ba(Ti_1-xZr_x)O₃. Such lead-free, environmental-friendly materials were shown, from dielectric measurements, to exhibit behaviours extending from conventional to relaxor ferroelectrics on increasing the zirconium concentration. The evolution of the Raman spectra was studied as a function of temperature for various compositions, and the spectroscopic signature of the corresponding phases was determined. In the relaxor state, the variation of the integrated intensity of the Raman lines with temperature showed a plateau at low temperature. This anomaly was also detected as a peak in depolarization current measurements, and attributed to ergodicity breaking which characterizes usual relaxor systems. Raman results hint at locally rhombohedral polar nanoregions resulting from the random fields associated with Zr ions. Received 25 September 1998     

Evolution from relaxor-like dielectric to ferroelectric in Ba[(Fe0.5Nb0.5)1−xTix]O3 solid solutions

Ba[(Fe_0.5Nb_0.5)_1−xTi_x]O₃ (x=0.2,0.4,0.6,0.8,0.85,0.9 and 0.95) solid solutions were synthesized by a standard solid-state reaction technique. X-ray diffraction at room temperature and dielectric characteristics over a broad temperature and frequency range were evaluated systematically. The structure of Ba[(Fe_0.5Nb_0.5)_1−xTi_x]O₃ solid solutions changed from cubic to tetragonal with increasing x. A Debye-like dielectric relaxation following the Arrhenius law similar to that in Ba(Fe_0.5Nb_0.5)O₃ was observed at lower temperature in the composition range 0.2≤x≤0.8, while the relaxor ferroelectric, diffused ferroelectric and normal ferroelectric behavior were observed for x=0.85,0.9 and 0.95, respectively. The process of the evolution of relaxor-like dielectric to ferroelectric suggested the changing from dilute polar micro-domains to polar micro-domains, polar micro/macro-domains and then polar macro-domains in the present ceramics.     

Microstructure and piezoelectric properties of Bi0.5(Na0.82K0.18)0.5TiO3−NaSbO3 ceramics

Lead-free piezoelectric ceramics (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ have been prepared by a conventional ceramics technique, and their microstructure and electrical properties have been investigated. The addition of NaSbO₃ has no remarkable effect on the crystal structure within the studied doping content; however, an obvious change in microstructure took place. With increase in NaSbO₃ content, the temperature from a ferroelectric to antiferroelectric phase transition increases, and the temperature for a transition from antiferroelectric phases to paraelectric phases changes insignificantly. Simultaneously, the temperature range between the rhombohedral phase transition point and the Curie temperature point becomes smaller. The piezoelectric properties significantly increase with increase in NaSbO₃ content and the piezoelectric constant and electromechanical coupling factor attain maximum values of d₃₃=160 pC/N and k_p=0.333 at x=0.01. The results indicate that (1−x)Bi_0.5(Na_0.82K_0.18)_0.5TiO₃−xNaSbO₃ ceramic is a promising lead-free piezoelectric candidate material.     

Dielectric properties Ca-substituted barium strontium titanate ferroelectric ceramics

The dielectric and ferroelectric properties of Ba_1−xSr_xTiO₃ (BST) (x=0.10,0.20,0.30,0.40 and 0.60) ceramics and Ba_1−2xSr_xCa_xTiO₃ (BSCT) (x=0.10,0.20,0.30) ceramics have been investigated. The low temperature phase transitions of BST ceramics vanish after Ca²⁺ substitution while the high temperature transition is diffused and relaxed, which becomes more obvious with increasing x. Ca²⁺ substitution obviously decreases the dielectric constant maximum, K_m, of BST ceramics and changes the temperature of dielectric constant maximum, T_m, of BST ceramics. The shift of T_m in BST is attributed mainly to the Sr²⁺ and Ba²⁺ concentration. BST ceramics exhibit almost normal ferroelectric characteristics, while a typical relaxor behavior was observed in BSCT ceramics. The relaxor behavior observations may be understood by a random electric field induced domain state.     

Dielectric properties of SrBi2−xPrxNb2O9 ceramics (x=0, 0.04 and 0.2)

SrBi_2−xPr_xNb₂O₉ (x=0, 0.04 and 0.2) ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase layered perovskite structure ferroelectrics were obtained. A relaxor behavior of frequency dispersion was observed among Pr-doped SrBi₂Nb₂O₉. The degree of frequency dispersion ΔT increased from 0 for x=0-7 °C for x=0.2, and the extent of relaxor behavior γ increased from 0.94 for x=0-1.45 for x=0.2. The substitution of Pr ions for Bi³⁺ ions in the Bi₂O₂ layers resulted in a shift of the Curie point to lower temperatures and a decrease in remanent polarization. In addition, the coercive field 2E_c reduced from 110 kV/cm for an undoped specimen to 90 kV/cm for x=0.2.     

Dielectric and piezoelectric properties of lead-free (Na0.5K0.5)NbO3-SrTiO3 ceramics

In this article, we report successful preparation of dense [(Na_0.5K_0.5)_1−xSr_x](Nb_1−xTi_x)O₃ (x=0.005-0.100) ceramics by ordinary sintering in air. The dependence of phase structure on doping content of SrO and TiO₂ has been determined by the X-ray diffraction technique. It was found that the crystal structure changed from orthorhombic to tetragonal at x≈0.040. Dielectric study revealed that the dielectric relaxor behavior was induced by doping of SrO and TiO₂ into (Na_0.5K_0.5)NbO₃. The samples in the composition range from x=0.005 to 0.020 exhibited excellent electrical properties, piezoelectric constant of electromechanical planar and thickness coupling coefficients of k_p=26.6-32.5% and k_t=39.8-43.8%. The results show that the [(Na_0.5K_0.5)_1−xSr_x](Nb_1−xTi_x)O₃ ceramics are one of the promising lead-free materials for electromechanical transducer applications.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.     

Effects of composition on phase structure and electrical properties of (K0.5Na0.5)0.90Li0.06Sr0.02Nb(1−x)SbxO3 ceramics

Lead-free (K_0.5Na_0.5)_0.90Li_0.06Sr_0.02Nb_(1−x)Sb_xO₃ (KNLSN-Sb_x) ceramics were synthesized by ordinary sintering technique. The compositional dependence of phase structure and electrical properties of the ceramics was systematically investigated. All samples possessed pure perovskite structure, showing room temperature symmetries of orthorhombic at x<0.01, coexistence of orthorhombic and tetragonal phases at x=0.01, and tetragonal at 0.02≤x≤0.05. The temperature of the polymorphic phase transition (PPT) was shifted to lower temperature and dielectric relaxor behavior was induced by increasing Sb content. The samples near the coexistence region (x=0.01) exhibited enhanced electrical properties: d₃₃∼145 pC/N, k_p∼38% and P_r∼20.4 μC/cm².     

Ferroelectricity in antiferromagnetic phases of Eu1−xY xMnO3

This work reports an experimental investigation of the ferroelectric character of magnetic phases of the orthorhombic Eu_1−xY _xMnO₃ system at low temperatures. The temperature dependence of the polarization curves clearly reveals the existence of a re-entrant improper ferroelectric phase for x=0.2, 0.3 and 0.5. A ferroelectric phase is also stable for x=0.4, and we have no experimental evidence for its vanishing down to 7 K. From these and early results obtained using other experimental techniques, the corresponding (x,T) phase diagram was traced, yielding significant differences with regard to the ones previously reported.     

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

We have investigated the initial growth of Sn and Ge_1−xSn_x layers on Ge(0 0 1) surface by using scanning tunneling microscopy. After the growth of a 0.035 ML-thick Sn layer at room temperature, Sn clusters lining vertically to a dimer row was observed. In the case of the 0.035-0.018 ML-thick Sn growth at 250 °C, the characteristic surface reconstruction with the step-edge undulation like a comb was observed. In the growth of a Ge_0.994Sn_0.006 layer at 250 °C, the multilayer polynuclear growth with a lot of two-dimensional small domain was observed. These surface reconstructions should be accounted for by the large compressive stress induced in the surface layer due to the incorporation of Sn atoms.     

Electrical conduction and optical properties of amorphous (Sb2Se3)100−xSnx thin films

The variation of DC electrical conductivity and the optical properties of thermally evaporated a- (Sb₂Se₃)_100−xSn_x thin films with temperature have been studied. It is found that the thermal activation energy decreases, while the optical gap first increases (up to x=1) and then decreases, with the increase in Sn content. These results have been explained by taking into consideration the structural modifications induced by the incorporation of Sn into the parent alloy. The variation in the conductivity prefactor (σ_o) with Sn addition indicates a change in the dominant conduction transport mechanism from extended states to localized states. An experimental correlation between the activation energy and the pre-exponential factor has been observed, indicating the validity of Meyer–Neldel rule in the studied samples.     

Preparation of REFeAsO1−xFx (RE=Sm and Gd) superconductors at a relatively low temperature

A series of the SmFeAsO_1−xF_x and GdFeAsO_1−xF_x (x=0.05, 0.1, 0.15, 0.2, 0.25) samples have been prepared using nano-scaled ReF₃ as the fluorine resource at a relatively low temperature. The samples have been sintered at 1100 and 1120 °C for SmFeAsO_1−xF_x and GdFeAsO_1−xF_x, respectively. These temperatures are at least 50-60° lower than other previous reports. All of the so-prepared samples possess a tetragonal ZrCuSiAs-type structure. Dramatically supression of the lattice parameters and increase in T_c proved that this low temperature process was more effective to introduce fluorine into R_EFeAsO. Superconducting transition appeared at 39.5 K for SmFeAsO_1−xF_x with x=0.05 and at 22 K for GdFeAsO_1−xF_x with x=0.1. The highest T_c was detected to be 54 K in SmFeAsO_0.8F_0.2 and 40.2 K in GdFeAsO_0.75F_0.25. The use of the nano-scaled ReF₃ compounds has improved the efficiency of the present low temperature method in synthesizing the fluorine-doped iron-based superconductors.     

Ferroelastic transition and the relaxor state in SrTiO3-PbMg1/3Nb2/3O3

Dielectric and acoustic properties of the (1 ? x)SrTiO₃?xPbMg_1/3Nb_2/3O₃ solid solutions (0 ? x ? 1) have been studied at temperatures ranging from 4.2 to 350 K. It has been found that the improper ferroelastic transition exists up to a concentration x = 0.4 and that the phase transition temperature grows with x increasing from 0 to 0.4. As the concentration of the second component is further increased, the transition becomes suppressed by the relaxor phase forming at x _c ≈ 0.22. The results obtained are discussed in terms of the current concepts of relaxor ferroelectrics.     

Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Room temperature photoluminescence quantum efficiency of the alloy of Ca_1−xEu_xGa₂S₄ was measured as a function of x, and was found to be nearly unity under excitation at peak wavelength of excitation spectrum (510 nm) in the x range of 0.01≤x≤0.2. At larger x values, it tends to decrease, but still as high as 30% for stoichiometric compound EuGa₂S₄. Taking these backgrounds into account, pump-probe experiments were done with Ca_1−xEu_xGa₂S₄ for searching optical gain at x=0.2. The optical gain of nearly 30 cm⁻¹ was confirmed to exist, though the pumping induced transient absorption which seems to limit the higher gain was found.     

Investigation on optical transmission spectra of (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

The optical transmission spectra from 0.3 to 11 μm of relaxor ferroelectric single crystals (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) were systematically studied at room temperature in this paper. The crystal is transparent between 0.45 and 5.5 μm and becomes completely absorbing around 0.4 μm in near UV region and 10 μm in infrared region. But the wavelength cutoff in near UV is much sharper than the long wavelength cutoff. As compared with other configurations, tetragonal single crystals possess the optimal transmission properties. The optical transmittance in the wavelength region from 0.45 to 5.5 μm is about 70%. The results show that tetragonal PMN-xPT single crystals are promising for a wide range of optical applications. Some discussions about the oxygen-octahedra structure that determines the basic energy level of the crystals are also presented on the optical properties of PMN-xPT single crystals.     

Effect of K doping on the physical properties of La0.65Ca0.35−xKxMnO3 (0?x?0.2) perovskite manganites

The effects of K doping in the A-site on the structural, magnetic and magnetocaloric properties in La_0.65Ca_0.35−xK_xMnO₃ (0?x?0.2) powder samples have been investigated. Our samples have been synthesized using the solid-state reaction method at high temperature. The parent compound La_0.65Ca_0.35MnO₃ is an orthorhombic (Pbnm space group) ferromagnet with a Curie temperature T_C of 248 K. X-ray diffraction analysis using the Rietveld refinement show that all our synthesized samples are single phase and crystallize in the orthorhombic structure with Pbnm space group for x?0.1 and in the rhombohedral system with R3¯c space group for x=0.2 while La_0.65Ca_0.2K_0.15MnO₃ sample exhibits both phases with different proportions. Magnetization measurements versus temperature in a magnetic applied field of 50 mT indicate that all our investigated samples display a paramagnetic-ferromagnetic transition with decreasing temperature. Potassium doping leads to an enhancement in the strength of the ferromagnetic double-exchange interaction between Mn ions, and makes the system ferromagnetic at room temperature. Arrott plots show that all our samples exhibit a second-order magnetic-phase transition. The value of the critical exponent, associated with the spontaneous magnetization, decreases from 0.37 for x=0.05 to 0.3 for x=0.2. A large magnetocaloric effect (MCE) has been observed in all samples, the value of the maximum entropy change, |ΔS_m|_max, increases from 1.8 J/kg K for x=0.05 to 3.18 J/kg K for x=0.2 under a magnetic field change of 2 T. For x=0.15, the temperature dependence of |ΔS_m| presents two maxima which may arise from structural inhomogeneity.     

Structural,thermal and electrical properties of the semiconductor system Ag(1−x)CuxInSe2

This paper presents a study of bulk samples synthesized of the Ag_1−xCu_xInSe₂ semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag_1−xCu_xInSe₂ system for x≤0.4 are dominated by n-AgInSe₂, while for x>0.4, these are in the domain of p-CuInSe₂. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag₂Se and InSe) in small proportion were identified by XRD and DTA.     

Ferromagnetic nature of (Ga, Cr)As epilayers revealed by magnetic circular dichroism

A systematic study of magnetic circular dichroism (MCD) was carried out in a wave length range 500-960 nm for (Ga_1−x, Cr_x)As epilayers with x=2.38% and 4.59% grown by the low temperature molecular beam epitaxy (LT-MBE) technique. Hysteresis characteristics showed up indeed in the magnetic field dependence of both MCD and magnetization measured by the superconductor quantum interference device (SQUID). The Curie temperature of the (Ga_1−x, Cr_x)As epilayer was determined to be about 12 K by the Arrott approach. The present result provides evidences that there is strong coupling of the Cr spins to the GaAs host band structure in (Ga_1−x, Cr_x)As samples. That affects the critical point of the semiconductor host, and makes the magnetization behavior in a plot of M∼B/T (magnetic field divided by temperature) substantially different from standard superparamagnetism.