氨化法制备GaN:Tb纳米颗粒的光学性能

利用简单的氨还原方法制备了GaN:Tb纳米颗粒. X射线衍射结果显示纳米颗粒为六方结构, 根据Scherrer公式, 计算得到了GaN:Tb纳米颗粒的平均晶粒大小为21.2 nm; 透射电子显微镜结果显示为GaN:Tb纳米颗粒尺寸均匀, 尺寸大小约为20 nm; 除正常的GaN Raman振动模式外, 还观察到了251和414 cm^-1 2个额外的Raman散射峰, 前者是表面无序或尺寸限制效应造成的, 而后者则是八面体Ga-N₆振动模式; 最后, 测量了GaN:Tb纳米颗粒的室温光致发光谱, 获得了Tb³⁺离子在可见光区(位于493.9, 551.2, 594.4和630.1 nm)的本征发光.     

Rare-earth chloride seeded growth of GaN nano- and micro-crystals

A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl₃ seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er³⁺ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.     

Effect of the excitation level on the thermal quenching and dynamics of the photoluminescence of GaAs/AlGaAs shallow quantum well structures

The effect of the excitation level on the dynamics of heavy-hole exciton photoluminescence in tunneling-isolated GaAs/Al _x Ga_{1 − x} As (x = 0.05) shallow quantum wells at temperatures of 5 to 70 K is investigated. It is shown that the exciton lifetimes depend strongly on the excitation level, while the activation energies characterizing the thermal escape of nonequilibrium charge carriers from the wells virtually do not.     

Anisotropy of absorption spectra of the rare-earth orthoaluminate TbAlO<Subscript>3</Subscript> in polarized light

Polarized spectra of the optical absorption of the 4f → 4f transition ⁷ F ₆ → ⁵ D ₄ in rare-earth orthoaluminate TbAlO₃ were experimentally studied at temperature T = 78 K. It was shown that the nontrivial character of the absorption anisotropy of TbAlO₃ at low temperatures could be related either to the symmetry of wave functions of the Stark sublevels of ⁷ F ₆ and ⁵ D ₄ multiplets combining in the optical transitions under study or to optical experiment geometry that takes into account the orientation of incident light polarization relative to the crystal axes and the axes of local coordinate systems of a rare-earth ion in orthoaluminate.     

The luminescence enhancement of Eu3+ ion and SnO2 nanocrystal co-doped solben gel SiO2 films

SnO₂ nanocrystal and rare-earth Eu³⁺ ion co-doped SiO₂ thin films are prepared by sol-gel and spin coating methods. The formation of tetragonal rutile structure SnO₂ nanocrystals with a uniform distribution is confirmed by X-ray diffraction and transmission electron microscopy. Fourier transform infrared spectroscopy is used to investigate the densities of the hydroxyl groups, and it is found that the emission intensity from the ⁵D₀-⁷F₂ transitions of the Eu³⁺ ions is enhanced by two orders of magnitude due to energy transfer from the oxygen-vacancy-related defects of the SnO₂ nanocrystals to nearby Eu³⁺ ions. The influences of the amounts of Sn and the post-annealing temperatures are systematically evaluated to further understand the mechanism of energy transfer. The luminescence intensity ratio of Eu³⁺ ions from electric dipole transition and magnetic dipole transition indicate the different probable locations of Eu³⁺ ions in the sol-gel thin film, which are further discussed based on temperature-dependent photoluminescence measurements.     

Rare earth doped lithium titanate (Li2TiO3) for potential phosphor applications

Lithium titanate ceramics doped with three rare earth (RE) ions namely Eu³⁺, Dy³⁺ and Tb³⁺ were synthesized and their photoluminescence (PL) properties were investigated. PL spectra of Eu doped sample showed peaks corresponding to the ⁵D₀→⁷F_j (j=0, 1, 2, 3 and 4) transitions under 230 nm excitation. Strong red emission coming from the hypersensitive ⁵D₀→⁷F₂ transition of Eu³⁺ ion suggested the presence of the dopant ion in a highly asymmetric environment. Dy doped samples showed the Dy³⁺ emission characteristic due to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions. Their relative intensity ratios also suggested the presence of asymmetric environment around the metal ion. In case of the Tb³⁺ doped sample blue-green emission corresponding to the ⁵D₄→⁷F_j (j=6, 5 and 4) transitions was seen. The fluorescence lifetimes of Eu³⁺, Dy³⁺ and Tb³⁺ ions were found to be 645, 900 and 740 μs, respectively. PL intensity of the individual rare earth doped samples was compared with commercial red and green phosphors. It was found that the emission from Eu doped titanate sample was 46% of the commercial red phosphor and in case of the Tb samples it was 30% when excited at 230 nm. However, the synthesized Eu doped titanate sample showed better color purity as compared to the commercial phosphor. The titanate host was doped with all the three rare earths to get white light emission from the system. The individual rare earth ion content was optimized so as to get a near white light emission. The color coordinates of the triple doped systems were evaluated and plotted on the CIE x–y diagram. Our results suggest that lithium titanate has enough potential to be a phosphor material.     

Photoluminescence of bulk Eu-doped GaN crystals

A study of the variation of photoluminescence spectra of bulk Eu-doped GaN samples revealed that the dopant can reside in the crystal in various charge states depending on the total defect concentration in the starting semiconductor host matrix. In crystals with the lowest concentration of shallow-level defects, the ion can exist only in one charge state, Eu³⁺. At higher concentrations of such defects, Eu can be observed in two charge states, Eu²⁺ and Eu³⁺. A rare-earth impurity was found to act as a getter of defects in the starting GaN matrix.     

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/Al_xGa_1−xN/GaN heterostructures with different Al mole fraction in the Al_xGa_1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×10³ cm² /Vs⁻¹ for GaN capping layer thickness grater than 100 Å with an Al_0.32Ga_0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×10¹² cm⁻² for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.     

Laser cooling of a single Ca+ ion: Observation of quantum jumps

This paper describes trapping and laser cooling of a Ca⁺ ion in an rf quadrupole ion trap. A single Ca⁺ ion is laser cooled to below 130 mK and quantum jumps are observed by exciting the ion into the metastable D _5/2 state via the P _3/2 state. The lifetime of the metastable D _5/2 state is estimated from the distribution of the dark periods of the quantum-jump signal. Collision-induced jumps between the metastable D _3/2 state and the D _5/2 state in a background gas are also directly observed.     

Temperature-dependent nepheloxetic shift of the 5 D 0→7 F 0 luminescence line of a Eu3+ ion in a superionic Na5Y(:Eu)Si4O12 single crystal

A decrease in the wavelength of the ⁵ D ₀→⁷ F ₀ luminescence line of a Eu³⁺ ion in a single crystal of the superionic conductor Na₅Y(:Eu)Si₄O₁₂ is observed as a consequence of raising the temperature. The effect is interpreted as the result of a change in the distribution of mobile Na⁺ cations in the second coordination sphere of the luminescing rare-earth ion. Fiz. Tverd. Tela (St. Petersburg) 39, 1997–2000 (November 1997)     

Luminescence of Tb3+ ions in silicate glasses

The optical absorption and photoluminescence emission spectra of terbium doped sodium and lithium aluminium silicate glasses have been measured as a function of terbium concentration. Optical absorption has been measured over the wavelength range from 250 nm to 40 μm and the absorption bands attributed to Tb³⁺ ions have been identified. Luminescence emission occurs in two groups of bands in the blue and in the green. The green ⁵D₄ → ⁷F_J emission is more intense than the blue ⁵D₃ → ⁷F_J. The green luminescence is enhanced at the expense of the blue when the Tb³⁺ ion concentration reaches 0.5 molar%, which corresponds to an ion separation of 20 Å. The green emission is quenched when the Tb³⁺ ion concentration exceeds 5 molar%, corresponding to an ion separation of 9.5 Å. It is concluded that energy transfer from ⁵D₃ to ⁵D₄ levels begins at Tb³⁺ ion separations of 20 Å, and that the process is multipolar. Exchange dipole processes set in at 9.5 Å and quench the green emission. The ion separations at which the two processes occur in silicate glasses are much larger than those at which similar processes set in crystalline material. This enhancement of energy transfer processes in silicate glass is attributed to inhomogeneous broadening of the absorption and emission bands. The detailed structure of the emission bands, particularly that of the ⁵D₄ → ⁷F_6,5,4 doublets, is used to suggest that the Tb³⁺ ions occupy two different sites with rhombohedral and cubic symmetries.     

绝缘氧化层上自离子注入Si薄膜W线发光性能的调控

对SOI基片上的Si薄膜进行了一系列Si⁺自注入和热退火的改性实验,并利用低温光致发光(PL)光谱对这些Si薄膜样品的发光性能进行了测试. 在这些SOI样品的PL光谱中观察到了丰富的光学结构,包括D₁,D₂,D₃,X以及异常尖锐的W线. 通过对比在同等光谱测试条件下的W线归一化强度,获得了针对SOI基片发射W线较为理想的自注入和热退火参数. 同时,还对D系列发光峰以及W线的缺陷起源和光学性质进行了很好的讨论. 关键词： SOI结构 自离子注入 W线 近红外发光器件     

Eu3+-site occupation in CaTiO3 perovskite material at low temperature

In order to clarify the site occupancy of rare-earth ions in rare-earth doped perovskite materials, the un-doped pure CaTiO₃ and Eu³⁺-doped CaTiO₃ samples with a series of Ca/Ti ratio were synthesized via high-temperature solid-state reaction method. X-ray diffraction (XRD) powder patterns confirm that the crystal structure keeps invariant at various Ca/Ti ratios. Measurement results of unit-cell parameters and X-ray photoelectron spectroscopy (XPS) indicate that Eu³⁺ ions enter into the Ca²⁺ site. The high-resolution photoluminescence spectra of Eu³⁺ ions at 20 K in all samples did not witness a significant change under the excitation at different wavelength, implying that Eu³⁺ ions occupy only one type of site. Considering the small spectral splitting range of ⁵D₀ → ⁷F₂ transition and the large intensity ratio of ⁵D₀ → ⁷F₂/⁵D₀ → ⁷F₁, it can be concluded that Eu³⁺ occupies Ca²⁺ site with larger coordinate numbers rather than Ti⁴⁺ site.     

纳秒激光诱导铜等离子体中原子激发态5s′~4D_(7/2)的瞬态特性研究

利用时间分辨光谱技术,研究了激光诱导Cu等离子体中激发态5s′4D7/2的形成及其辐射跃迁的瞬态特性.结果表明:在激发态5s′4D7/2原子的制备过程中,电子离子复合、粒子间碰撞机理在不同时刻分别起主导作用.激光峰值到达金属表面后500ns期间,粒子间的剧烈碰撞作用使得激发态5s′4D7/2主要通过向低能态4p′4F9o/2跃迁来转移能量.500ns以后,激发态5s′4D7/2通过以相同的概率辐射CuI465.11nm和CuI529.25nm特征谱线向低能态4p′4F9o/2和4p′4D7o/2转移能量.     

Optical properties,luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

We report on the luminescence quenching mechanism of Eu-doped GaN powder phosphor produced with a low-cost, high yield rapid-ammonothermal method. We have studied as-synthesized and acid rinsed Eu-doped GaN powders with the Eu concentration of ～0.5 at.%. The Eu-doped GaN photoluminescence (PL) was investigated with 325 nm excitation wavelength at hydrostatic pressures up to 7.7 GPa in temperature range between 12 K and 300 K. The room temperature integrated Eu³⁺ ion PL intensity from acid rinsed material is a few times stronger than from the as-synthesized material. The temperature dependent PL studies revealed that the thermal quenching of the dominant Eu³⁺ ion transition (⁵D₀ → ⁷F₂) at 622 nm is stronger in the chemically modified phosphor indicating more efficient coupling between the Eu³⁺ ion and passivated GaN powder grains. Furthermore, it was found that thermal quenching of Eu³⁺ ion emission intensity can be completely suppressed in studied materials by applied pressure. This is due to stronger localization of bound exciton on Eu³⁺ ion trap induced by hydrostatic pressure. Furthermore, the effect of 2 MeV oxygen irradiation on the PL properties has been investigated for highly efficient Eu-doped GaN phosphor embedded in KBr–GaN:Eu³⁺ composite. Fairly good radiation damage resistance was obtained for 1.7 × 10¹² to 5 × 10¹³ cm^?2 oxygen fluence. Preliminary data indicate that Eu-doped GaN powder phosphor can be considered for devices in a radiation environment.     

Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

With the aim of establishing the mechanisms for spontaneous recombination and lasing, we have studied InGaN/GaN multiple quantum well heterostructures emitting in the 450 nm region and grown by organometallic vapor-phase epitaxy on silicon substrates using several mechanical stress-reducing AlN/AlGaN inserts. Photoluminescence (PL) excitation spectroscopy, the non-monoexponential nonequilibrium carrier relaxation kinetics, and x-ray diffractometry data indicate significant inhomogeneity of the InGaN solid solution in quantum wells of these structures. The dependences of the position of the photoluminescence spectra on the excitation level and the temperature, the large shift in the photoluminescence, gain, and lasing spectra relative to the absorption edge allow us draw the conclusion that the dominant contribution to spontaneous and stimulated recombination comes from nonequilibrium charge carriers localized in indium-rich InGaN clusters. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 1, pp. 94–101, January–February, 2008.     

垒掺In提高InGaN/GaN多量子阱发光特性

利用金属有机物化学气相淀积技术在蓝宝石衬底上生长InGaN/GaN多量子阱结构.对多量子阱垒层掺In和非掺In进行了比较研究，结果表明，垒掺In 的样品界面质量变差，但明显增加了光致发光谱的峰值强度和积分强度，带边峰与黄光峰强度之比增大，降低了表面粗糙度.利用这两种结构制备了相应的发光二极管(LED)样品.通过电荧光测量可知，垒掺In的LED比非掺In的LED有较高的发光强度和相对均匀的波长，这主要是由于垒掺In后降低了阱与垒之间晶格失配的应力，从而降低了极化电场，提高了辐射复合效率. 关键词： InGaN/GaN多量子阱 X射线双晶衍射 原子力显微镜 光致发光     

Sol-gel preparation and photoluminescence property of YBO3:Eu/Tb nanocrystalline thin films

YBO₃:Eu³⁺/Tb³⁺ nanocrystalline thin films were successfully deposited onto quartz glass substrates by Pechini sol-gel dip-coating method, using rare-earth nitrates and boric acid as starting materials. The crystal structure, morphology, chemical composition and photoluminescence property of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and fluorescence spectrophotometer. The results of XRD, AFM, XPS and FTIR revealed that the films were composed of spherical YBO₃:Eu³⁺/Tb³⁺ nanocrystals with average grain size of 80 nm. The YBO₃:Eu³⁺ film exhibited strong orange emission at 595 nm and red emission at 615 nm, which were, respectively ascribed to the (⁵D₀→⁷F₁) and (⁵D₀→⁷F₂) transitions of Eu³⁺. The YBO₃:Tb³⁺ film showed dominant green emission at 545 nm due to the ⁵D₄-⁷F₅ transition of Tb³⁺.     

Photoluminescence properties of Eu3+-doped Gd2MoB2O9 phosphors for LED-based solid-state-lighting

Investigation was performed on luminescent properties of novel Gd_2−x Eu _x MoB₂O₉ (0.02≤x≤2.0) phosphors. The excitation spectra consist of broad band and intense narrow lines. The 4f-4f transitions are situated in a favorable position for excitation by GaN chip emission. The emission spectra consist of transitions from the ⁵D₀ level to the lower ⁷F manifold, and the emission shows no concentration quenching at higher doping level. The decay time spectra of the ⁵D₀ → ⁷F₂ emission are recorded. Under 395 nm excitation, the intensity of ⁵D₀ → ⁷F₂ transition of GdEuMoB₂O₉ is 1.2 times stronger than that of commercial Eu³⁺:Y₂O₂S phosphor. Gd₂MoB₂O₉:Eu³⁺ phosphors are promising candidates for near-UV-based solid-state-lighting (SSL).     

Nonsteady photoconductivity of layers of glass of the As-Se system

This article examines experimental results from a study of impulsive photoconductivity in layers of glasses of As_xSe_100–x (30-@#@ 60). It was found that thermal and laser treatment (thermo- and photostructural changes) affect the character of relaxation processes in photoconduction in freshly prepared layers. It was also established that both annealing at temperatures near the softening point of the glass and laser irradiation with quantum energies exceeding the width of the forbidden band are accompanied by a change in the recombination lifetime of nonequilibrium carriers. It is concluded on the basis of empirical data that an efficient recombination channel complementary to the main channel (tunnel transition of the type 2D⁰D⁺+D^–) is present in freshly prepared layers. The latter is present in annealed layers. The additional recombination channel is related to the existence of homopolar bonds in binary arsenic selenides and is proven to exist by data on the effect of composition on photocurrent relaxation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 66–71, May, 1987.