Rashba自旋轨道耦合下square-octagon晶格的拓扑相变

本文研究了各向同性square-octagon晶格在内禀自旋轨道耦合、Rashba自旋轨道耦合和交换场作用下的拓扑相变,同时引入陈数和自旋陈数对系统进行拓扑分类.系统在自旋轨道耦合和交换场的影响下会出现许多拓扑非平庸态,包括时间反演对称破缺的量子自旋霍尔态和量子反常霍尔态.特别的是,在时间反演对称破缺的量子自旋霍尔效应中,无能隙螺旋边缘态依然能够完好存在.调节交换场或者填充因子的大小会导致系统发生从时间反演对称破缺的量子自旋霍尔态到自旋过滤的量子反常霍尔态的拓扑相变.边缘态能谱和自旋谱的性质与陈数和自旋陈数的拓扑刻画完全一致.这些研究成果为自旋量子操控提供了一个有趣的途径.     

Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.     

Optical absorption and magnetotransport in quantum wires in a perpendicular magnetic field

A periodic array of δ function potentials are used to simulate the potential barriers between quantum wires in the presence or absence of lattice site dislocation. The exact eigenenergies and eigenfunctions are found by employing a numerical diagonalization procedure. Based on these results, a self-consistent field theory is derived for the mid-infrared absorption coefficient of the system. The crossover from a cyclotron mode to two tunneling coupled modes and finally to edge and 1D lattice magnetoplasmon modes with increasing modulation strength is investigated. The magnetic field enhanced and suppressed electron tunneling, associated with the evolution to cyclotron modes at strong magnetic fields passing through the formation of tunneling coupled modes, is observed. The edge mode excitation energy oscillates as a function of the electron density. These oscillations correspond to a soft or hard potential wall for which the electron states are extended or localized, respectively. The displacement of the 1D lattice magnetoplasmon modes under strong modulation is found to be periodic and corresponds to the evolution from a complex unit cell which is composed of one narrow and one wide quantum wire to a simple unit cell containing only one quantum wire. The magnetoresistivities and the associated conductivities are also calculated for the lateral surface superlattice. At strong potential modulation there is a giant peak in the Hall conductivity and many peaks in its resistivity in the quantum regime. With strong modulation, the suppression of the transverse conductivity along with oscillations in its resistivity are obtained.     

Quantum Hall ferromagnetism in graphene

Graphene is a two-dimensional carbon material with a honeycomb lattice and Dirac-like low-energy excitations. When Zeeman and spin-orbit interactions are neglected, its Landau levels are fourfold degenerate, explaining the 4e2/h separation between quantized Hall conductivity values seen in recent experiments. In this Letter we derive a criterion for the occurrence of interaction-driven quantum Hall effects near intermediate integer values of e2/h due to charge gaps in broken symmetry states.     

Hall Conductivity in a Quasi—Two—Dimensional disordered Electron System

By making use of the diagrammatic techniques in perturbation theory,we have investigated the Hall effect in a quasi-two dimensional disordered electron system.In the weakly localized regime,the analytical expression for quantum correction to Hall conductivity has been obtained using the kubo formalism and quasiclassical approximation.The relevant dimensional crossover behavior from three dimensions to two dimensions with decreasing the interlayer hopping energy is discussed.The quantum interference effect is shown to have a vanishing correction to the Hall coefficient.     

Electric- and magnetic-field-tuned Landau levels and Hall conductivity in AA-stacked bilayer graphene

We theoretically study the combined effect of magnetic and electric fields on the Landau levels and Hall conductivity in AA-stacked bilayer graphene. From the analytic expressions derived, we obtain explicit criterions for determining the zero-energy Landau level and different level crossings in the graphene bilayer. For providing a scheme of experimental verification, we further explore the quantum Hall effect in such a biased bilayer. It is found that the zero-conductance Hall plateau in this system can vanish at certain specific combinations of magnetic and electric fields, accompanying with the occurrence of resonance Hall conductivity steps.     

声子晶体中的多重拓扑相

研究了圆环型波导依照蜂窝结构排列的声子晶体系统中的拓扑相变.利用晶格结构的点群对称性实现赝自旋,并在圆环中引入旋转气流来打破时间反演对称性.通过紧束缚近似模型计算的解析结果表明,没有引入气流时,调节几何参数,系统存在普通绝缘体和量子自旋霍尔效应绝缘体两个相;引入气流后,可以实现新的时间反演对称性破缺的量子自旋霍尔效应相,而增大气流强度,则可以实现量子反常霍尔效应相.这三个拓扑相可以通过自旋陈数来分类.通过有限元软件模拟了多个系统中边界态的传播,发现不同于量子自旋霍尔效应相,量子反常霍尔相系统的表面只支持一种自旋的边界态,并且它无需时间反演对称性保护.     

Metal insulator transition in modulated quantum Hall systems

The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where the states are extended are identified. We find that the critical energies, which are distributed to each of the subbands, combine into one when the disorder becomes strong, in the way depending on the symmetry of the disorder and/or the periodic potential.     

二维无序电子系统子带间的杂质散射效应

借助于格林函数方法,研究了二维无序电子系统子带间杂质散射对电导率和霍耳系数的量子相干修正的影响。结果表明当电子从单带占据过渡到双带占据时,电导率和霍耳系数均发生跨越行为。 关键词：     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Self-assembled nanocrystalline CdSe thin films

The topic of this contribution is the investigation of quantum states and quantum Hall effect in electron gas subjected to a periodic potential of the lateral lattice. The potential is formed by triangular quantum antidots located on the sites of the square lattice. In such a system the inversion center and the four-fold rotation symmetry are absent. The topological invariants which characterize different magnetic subbands and their Hall conductances are calculated. It is shown that the details of the antidot geometry are crucial for the Hall conductance quantization rule. The critical values of lattice parameters defining the shape of triangular antidots at which the Hall conductance is changed drastically are determined. We demonstrate that the quantum states and Hall conductance quantization law for the triangular antidot lattice differ from the case of the square lattice with cylindrical antidots. As an example, the Hall conductances of magnetic subbands for different antidot geometries are calculated for the case when the number of magnetic flux quanta per unit cell is equal to three.     

Quantum spin Hall effect in inverted type-II semiconductors

The quantum spin Hall (QSH) state is a topologically nontrivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells and in this Letter we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. The quantum well exhibits an "inverted" phase similar to HgTe/CdTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking are essential. Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition.     

Topological response theory of doped topological insulators

We generalize the topological response theory of three-dimensional topological insulators (TI) to metallic systems-specifically, doped TI with finite bulk carrier density and a time-reversal symmetry breaking field near the surface. We show that there is an inhomogeneity-induced Berry phase contribution to the surface Hall conductivity that is completely determined by the occupied states and is independent of other details such as band dispersion and impurities. In the limit of zero bulk carrier density, this intrinsic surface Hall conductivity reduces to the half-integer quantized surface Hall conductivity of TI. Based on our theory we predict the behavior of the surface Hall conductivity for a doped topological insulator with a top gate, which can be directly compared with experiments.     

SU(2) andSU(1,1) algebra eigenstates: A unified analytic approach to coherent and intelligent states

We introduce the concept of algebra eigenstates which are defined for an arbitrary Lie group as eigenstates of elements of the corresponding complex Lie algebra. We show that this concept unifies different definitions of coherent states associated with a dynamical symmetry group. On the one hand, algebra eigenstates include different sets of Perelomov's generalized coherent states. On the other hand, intelligent states (which are squeezed states for a system of general symmetry) also form a subset of algebra eigenstates. We develop the general formalism and apply it to theSU(2) andSU(1,1) simple Lie groups. Complete solutions to the general eigenvalue problem are found in both cases by a method that employs analytic representations of the algebra eigenstates. This analytic method also enables us to obtain exact closed expressions for quantum statistical properties of an arbitrary algebra eigenstate. Important special cases such as standard coherent states and intelligent states are examined and relations between them are studied by using their analytic representations.     

On the origin of duality in the quantum Hall system

We discuss the possible origin of the duality observed in the quantum Hall current-voltage characteristics. We clarify the difference between “particle-vortex” (complex modular) duality, which acts on the full transport tensor, and “charge-flux” (“real”) duality, which acts directly on the filling factor. Comparison with experiment strongly favors the form of duality which descends from the modular symmetry group acting holomorphically on the complexified conductivity.     

Particle-hole symmetry and the nu=5/2 quantum Hall state

We discuss the implications of approximate particle-hole symmetry in a half-filled Landau level in which a paired quantum Hall state forms. We note that the Pfaffian state is not particle-hole symmetric. Therefore, in the limit of vanishing Landau-level mixing, in which particle-hole transformation is an exact symmetry, the Pfaffian spontaneously breaks this symmetry. There is a particle-hole conjugate state, which we call the anti-Pfaffian, which is degenerate with the Pfaffian in this limit. We observe that strong Landau-level mixing should favor the Pfaffian, but it is an open problem which state is favored for the moderate Landau-level mixing which is present in experiments. We discuss the bulk and edge physics of the anti-Pfaffian. We analyze a simplified model in which transitions between analogs of the two states can be studied in detail. Finally, we discuss experimental implications.     

Electric Field Effect on the Fractional Quantum Hall Conductivity

We have studied the effect of an external electric field on the dc fractional quantum Hall conductivity of a two-dimensional system with the dynamic structure function in the single-mode approximation. In analogy with the integral quantum Hall effect and euperconductivity, a gap-dependent critical electric current J_c, also exists in the case of fracctional quantum Hall conduction, above which is the maximum current for system to maintain superfluidity. We also find that, depending on the gap width and the phonon velocity, phonon may or may not contribute to the conductivity even at a finite lattice temperature, in agreement with experiments.     

Quantum criticality and minimal conductivity in graphene with long-range disorder

We consider the conductivity sigma of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class sigma model including a topological term with theta=pi. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of e(2)/h. When the effective time-reversal symmetry is broken, the symmetry class becomes unitary, and sigma acquires the value characteristic for the quantum Hall transition.