X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

The influence of boron (B)/arsenic (As) on X-ray photoelectron spectroscopy (XPS) study of NiSi formation on shallow junctions is investigated in this paper. The Ni-silicide film was formed after 30 s soak anneal at 450 °C on ultra shallow p+/n or n+/p junctions. The atomic ratio of Ni/Si profile in depth was probed by XPS and the results show that a uniform NiSi layer forms on B-doped p+/n junction while a non-uniform, Ni-rich silicide layer forms on As-doped n+/p junction. It does not agree with the results of other independent phase identification methods such as X-ray diffraction, Rutherford backscattering spectroscopy, and Raman scattering spectroscopy, which all demonstrate the formation of NiSi on both n+/p and p+/n junctions. Comparing the raw binding energy spectra of Ni and Si for each silicide film, the similar spectra for Ni signals are revealed. But the Si signals with an obviously smaller intensity is found to be responsible for the apparent Ni rich silicide formation on As-doped n+/p junction. It indicates that As atoms in the silicide film can affect the sputtering yield of Ni and Si, while no noticeable effect is observed for B atoms. More As atoms than B atoms segregation into the silicide layer is indeed verified by secondary ion mass spectroscopy. And micro-Raman scattering spectroscopy further confirms that the degree of crystallinity for NiSi on n+/p junction is inferior to that on p+/n junction.     

Interaction of iron atoms with the silicon surface coated with a native oxide layer

The solid-phase epitaxy of iron silicide on the Si(111) surface coated with a native oxide layer is studied by high-resolution photoelectron spectroscopy using synchrotron radiation and by atomic force microscopy. The iron deposition dose changes up to 1 nm, and the annealing temperature changes up to 500°C. At room temperature, the native oxide layer is shown to be impermeable to Fe atoms and an iron film grows on the sample surface. An increase in the annealing temperature to ～100°C results in a change in the film morphology, increasing its heterogeneity. As the annealing temperature increases to ～250°C, Fe and Si atoms diffuse through the oxide layer and undergo a solid-phase reaction. As a result, stable iron monosilicide ?-FeSi forms.     

Mechanisms of formation and the electronic properties of the Yb-Si(100) thin-film system

The formation and properties of the Yb-Si(100) thin-film system were studied by high-resolution photoelectron spectroscopy with synchrotron radiation, Auger electron spectroscopy, the contact potential difference technique, and low-energy electron diffraction measurements over a wide range of coverages and at different temperatures. It was established that the formation of the Yb-Si(100) system prepared by solid-phase epitaxy occurs through a mechanism close to the Stranski-Krastanow mechanism. It was shown that, at submonolayer coverages, it is primarily these two-dimensional (2D) 2 × 3 and 2 × 6 structures that are formed, while at higher coverages a three-dimensional Yb silicide film grows. Data on the morphology and phase composition of the silicide film and on the electronic state of the Si atoms and the valence state of the Yb atoms in the silicide and the 2D structures, as well as on the atomic structure of these films, were obtained. The components of the Si 2p spectra were studied for different coverages. The relation between the shape of these spectra obtained for multilayer Yb silicide films and their phase composition was revealed.     

Properties of the interaction of europium with Si(111) surface

Formation of the Eu/Si(111) system as the metal layer thickness gradually increases from 0.5 to 60 monolayers (ML) deposited on the silicon surface at room temperature, and after heating at up to 900 °C, has been studied by Auger electron spectroscopy, electron-energy-loss spectroscopy, and low-energy-electron diffraction. It is shown that room-temperature film growth passes through three stages, depending on the Eu layer thickness: metal chemisorption, interdiffusion of the metal and substrate atoms, and buildup of the metal on the surface of the system. Heating of ultrathin (about one ML) Eu films deposited at room temperature results in ordering of metal atoms on the silicon surface with only weak interaction. Heating thick (above 15 ML) Eu layers on the silicon surface produces silicides whose structure depends on the heating temperature. Fiz. Tverd. Tela (St. Petersburg) 40, 562–567 (March 1998)     

Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?³ by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni₃Si and the local temperature is 1389 K if the interlayer compound is Ni₂Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000     

Pd-Si薄膜固相反应的透射电子显微镜研究

本工作利用透射电子显微术研究了Pd-Si薄膜固相反应的初始生成相及生成相Pd₂Si与(111)取向Si衬底的取向关系随Pd膜厚度、退火温度等因素的变化规律。实验结果表明:在衬底保持室温的条件下,Pd沉积到Si(111)上时也能够生成一层外延的Pd₂Si,其厚度足以在常规的选区电子衍射中产生明显的信号。在170℃退火时,Pd-Si反应即可持续到生成200nm厚的外延的Pd₂Si。在Pd膜厚度为400nm的条件下,Pd₂Si与Si(111)衬底的取向关系为[0001]_(Pd2Si)轴织构。 关键词：     

Interaction of iron atoms with the Si(100)-2 × 1 surface

Interaction of iron atoms with the Si(100)-2 × 1 surface at room temperature is studied by core-level photoelectron spectroscopy using synchrotron radiation for Fe coverages ranging from a fraction of a monolayer to six monolayers. It is shown that the Fe/Si(100)-2 × 1 interface is chemically active: the Fe-Si solid solution forms early in deposition of iron on silicon. When the Fe coverage reaches four to five monolayers, the state of the system is changed and Fe₃Si silicide arises.     

Reactive epitaxy of cobalt disilicide on Si(111)

A study of the mechanism governing the initial stages in silicide formation under deposition of 1–10 monolayers of cobalt on a heated Si(111) 7×7 crystal is reported. The structural data were obtained by an original method of diffraction of inelastically scattered medium-energy electrons, which maps the atomic structure of surface layers in real space. The elemental composition of the near-surface region to be analyzed was investigated by Auger electron spectroscopy. Reactive epitaxy is shown to stimulate epitaxial growth of a B-oriented CoSi₂(111) film on Si(111). In the initial stages of cobalt deposition (1–3 monolayers), the growth proceeds through island formation. The near-surface layer of a CoSi₂(111) film about 30 Å thick does not differ in elemental composition from the bulk cobalt disilicide, and the film terminates in a Si-Co-Si monolayer triad.     

Thermally activated reconstruction in Yb-Si(111) thin-film structures

The electronic properties and mechanisms of formation of Yb-Si(111) thin-film structures, produced by room-temperature deposition of Yb atoms on the Si(111)7×7 surface are studied by Auger electron and LEED spectroscopy and the contact potential difference method. A study is also made of the effect of heating to 800 K on the properties of these structures. The interface is shown to form by the Stransky-Krastanov mechanism. Heating the Yb-Si(111) system is found to result in a very high (up to 1 eV) increase of the work function for all Yb atom concentrations on the silicon surface. In the adsorption stage, this increase is due to the growth of 2D ytterbium domains, which is accompanied by the formation of polarized domains from the silicon surface atoms with dangling valence bonds. The dipoles are oriented in such a way that their formation reduces the total energy of the Yb-Si(111) system and increases the work function. In the stage of silicide formation, the increase of the work function under heating is ultimately due to the appearance of a layer of silicon atoms on the Yb-Si(111) surface. Fiz. Tverd. Tela (St. Petersburg) 39, 1672–1678 (September 1997)     

Specific features of the formation of ytterbium films on the Si(111) surface at room temperature

The processes accompanying the formation of ytterbium films on the Si(111) surface at room temperature are investigated by the contact potential difference method, Auger electron spectroscopy, low-energy electron diffraction, and thermal desorption spectroscopy. It is shown that the grown metal films are uniform in thickness and that Si atoms virtually do not dissolve in the films. The atoms of the silicon substrate can diffuse in limited amounts into the Yb metal film only when the surface is bombarded by high-energy primary electron beams employed in Auger electron spectroscopy. The results obtained permit the conclusion that the previously observed oscillations of the work function in Yb-Si(111) thin-film structures cannot originate from dissolution of silicon atoms in the ytterbium film.     

Mössbauer-Effect Study of Metastable c-FeSi Synthesized by Molecular Beam Epitaxy (MBE) and by Ion Implantation

Conversion electron Mössbauer spectroscopy (CEMS) has been applied to the study of the metastable c-FeSi phase (i.e. an iron silicide with CsCl lattice structure) that was synthesized by implantation of Si + ions of 50 keV in energy into f -Fe (95% 57 Fe) near room temperature with a nominal dose of 5 2 10 17 cm m 2 , and by molecular beam epitaxy (MBE). Iron silicide layers with different stoichiometry (FeSi 0.85 , FeSi, Fe 0.85 Si) were grown by codeposition of 57 Fe and Si onto an Fe buffer layer on MgO(100). For all FeSi layers the defective CsCl structure was observed after annealing at different temperatures. X-ray diffraction measurements were performed to determine the structure and epitaxial relationship of the c-FeSi films. The lattice parameter perpendicular to the film plane was found to be 2.77(5) Å. CEMS measurements revealed a lower than cubic site symmetry of the iron atoms for both the c-FeSi layers synthesized by ion implantation and by MBE. The formation of nearly undistorted c-FeSi after annealing is favored by excess Fe atoms in the deposited film.     

Study of Ni/Si(1 0 0) solid-state reaction with Al addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni_xAl_y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed.     

TiSi mixing at room temperature: A high resolution ion backscattering study

Very thin Ti films (0–20 Å) have been deposited in ultra-high vacuum on atomically clean Si(111) surfaces. The films have been analyzed with Medium Energy Ion Scattering using the high depth resolution of this technique in combination with ion shadowing and blocking. The measurements show that mixing of Ti and Si already occurs at room temperature, for coverages below 2.8 × 10¹⁵ Ti atoms/cm². The composition of the uniformly mixed film is close to TiSi. For higher coverages no further mixing takes place and pure Ti is present on top of the ultrathin mixed film. The implications of these results for current silicide formation models are discussed.     

Adsorption stage in the formation of Eu-Si(111) thin-film structures

The adsorption stage in the formation of the Eu-Si(111) interface has been studied within a broad temperature range by thermal and isothermal desorption spectroscopy, low-energy-electron diffraction, Auger electron spectroscopy, and the contact potential difference method. It is shown that the ordering of an adsorbed europium film is accompanied by silicon surface reconstruction throughout the coverage range studied, 0<θ≤1.8. This self-organized process is also shown to be thermally activated. Ordered adsorbed europium layers have been found to be made up of 2D islands, whose structure depends on the amount of the metal deposited on the surface. The energy required to remove atoms from an island to vacuum has been determined. This energy decreases with decreasing 2D lattice constant of the islands. This pattern of its variation is accounted for, in the final count, by the decrease of the number of the Si surface atoms not bound directly to Eu atoms.     

LEED-AES study of the AuSi(100) system

The system Au/Si(100) has been studied using LEED and AES. Au films grow as Au(111) | Si(100) having six azimuthally rotated orientations at low deposition temperatures below 50°C after the formation of intermediate gold suicide layers. Crystalline gold silicide thin layers are formed on the Au(111) film after heat treatment at 100–400°C. Two types of suicide LEED pattern observed seem to have no correlation with crystallographic data reported on quenched alloy films. Heat treatment over 450°C leads to agglomeration of the film, producing a series of Au-induced superstructures. Heat treatment of the Au film over 1000°C regenerates the clean Si surface accompanied with many etch pits.     

Formation of iron and iron silicides on silicon and iron surfaces. Role of the deposition rate and volumetric effects

A thin iron film deposited at the rate of 10³ nm/sec on the Si(001) surface and a sandwich structure silicon/iron/Si(111) are studied by Surface Magneto-Optic Kerr Effect, High Resolution Electron Microscopy and X-ray Photoelectron Microscopy methods. The phases present in the structures are identified. Both structures are non-uniform. The ultra-fast-deposited film is magnetically hard (H _c=45 Oe), it contains the silicide Fe₅Si₃. The XPS line shift by +0.55 eV with respect to the pure iron 2p 3/2 level is attributed to Fe₅Si₃. The cross-section image of the sandwich structure shows the presence of enhanced-intermixing channels crossing the Si-rich layer. Iron atoms are the main diffusion species both at the Fe/Si(111) and Si/Fe interfaces. The nature of the volume defect and internal stresses in the transforming iron silicides and their effects on material intermixing and film growth process are discussed.     

Processes of silicide formation in the Fe/Si(111)7 × 7 system

The initial stages of the formation of iron silicides in the Fe/Si(111)7 × 7 system in the course of solid-phase epitaxy are investigated using high-resolution photoelectron spectroscopy (～100 meV) with synchrotron radiation. The spectra of the Si 2p core and valence-band electrons obtained after deposition of iron coverages of up to 28 monolayers on the surface of the sample and subsequent isochronous annealings at 650°C are measured and analyzed. It is shown that the first to form under Fe deposition is an ultrathin film of the metastable silicide FeSi with a CsCl-type structure, on which a layer of the Fe-Si solid solution with segregated silicon grows. At coverages in excess of 10 monolayers, an iron film grows on the surface of the sample. Annealing of a silicon crystal coated with a Fe layer leads to the sequential formation of two stable silicide phases, namely, the ?-FeSi and β-FeSi₂ phases, in the near-surface region of the sample. It is found that the process of solid-phase synthesis of the ?-FeSi phase passes through the stage of transformation of the iron film into the Fe-Si solid solution.     

Formation of ultrathin magnetic cobalt films on the Si(111)7 × 7 surface

The phase composition, electronic structure, and magnetic properties of ultrathin cobalt films (no thicker than 20 ?) applied on a Si(111)7 × 7 surface at room temperature are studied by high-resolution photoelectron spectroscopy using synchrotron radiation and magnetic linear dichroism. It is shown that, as the cobalt thickness increases, first interface cobalt silicide and then an island (discontinuous) film of silicon-in-cobalt solid solution form on the silicon surface. A metal cobalt film starts growing after the deposition of a ∼7-?-thick Co layer. It is found that the ferromagnetic ordering of the system, which is characterized by surface magnetization, sets in after the deposition of a ∼6-?-Co layer at the stage of Co-Si solid solution formation.     

Influence of the state of the bulk of the sample on the formation and thermal stability of the surface silicide on W(100)

The formation and destruction of the surface silicide on W(100) after cleaning of the sample surface and bulk in various regimes is studied by high-resolution Auger electron spectroscopy. It is shown that the cleanness of the bulk has practically no influence on the laws governing the formation of the surface silicide when Si atoms are adsorbed on a heated W surface and that almost up to completion of its formation all the silicon atoms impinging on the surface, from the very first, remain on it and are incorporated into the surface silicide. The destruction of the surface silicide depends in a definite manner on the state of the bulk, and at T=1400 K it is apparently limited in the early stages by the passage of Si atoms from the surface to the subsurface layer and in subsequent stages by the diffusion of silicon within the substrate. The bulk silicon density that limits the destruction of the surface silicide is estimated. Zh. Tekh. Fiz. 67, 137–140 (July 1997)     

Formation and properties of a binary adsorbed layer in a two-component adsorption system (Sm + Yb)-Si(111)

Low-energy electron diffraction, thermodesorption spectroscopy, and contact potential difference techniques were used in a first study on the coadsorption of Sm and Yb atoms on the Si(111) surface. At comparatively low coverages, in both one-component adsorption systems of the rare-earth metal-Si(111) type and the two-component system (Sm + Yb)-Si(111), the same sequence of diffraction patterns of the (n×1) type, where n=3, 5, and 7, was observed. This indicates that Sm and Yb atoms occupy the same adsorption centers in a mixed film. At higher coverages, at which the \((\sqrt 3 \times \sqrt 3 )R30^\circ \) reconstruction forms in the case of the Sm-Si(111) system and the surface undergoes the 2×1 reconstruction in the Yb-Si(111) system, the structure of the mixed film is governed by the ytterbium coverage θ(Yb). At low ytterbium coverages, θ(Yb)<0.15, superposition of the \((\sqrt 3 \times \sqrt 3 )R30^\circ \) and (2×1) diffraction patterns is observed. For θ (Yb)>0.15, however, the former pattern disappears, whereas the latter persists. A comparison of this evolution of a binary adsorbed layer with the properties of the Sm-Si(111) and Yb-Si(111) systems indicates its anomalous character.