Properties of the interaction of europium with Si(111) surface |
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Authors: | A Yu Grigor’ev A M Shikin G V Prudnikova S A Gorovikov V K Adamchuk |
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Institution: | (1) Institute of Physics, St. Petersburg State University, 198904 Petrodvorets, Russia |
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Abstract: | Formation of the Eu/Si(111) system as the metal layer thickness gradually increases from 0.5 to 60 monolayers (ML) deposited
on the silicon surface at room temperature, and after heating at up to 900 °C, has been studied by Auger electron spectroscopy,
electron-energy-loss spectroscopy, and low-energy-electron diffraction. It is shown that room-temperature film growth passes
through three stages, depending on the Eu layer thickness: metal chemisorption, interdiffusion of the metal and substrate
atoms, and buildup of the metal on the surface of the system. Heating of ultrathin (about one ML) Eu films deposited at room
temperature results in ordering of metal atoms on the silicon surface with only weak interaction. Heating thick (above 15
ML) Eu layers on the silicon surface produces silicides whose structure depends on the heating temperature.
Fiz. Tverd. Tela (St. Petersburg) 40, 562–567 (March 1998) |
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