CMOS—compatible reconfigurable microring demultiplexer with doped silicon slab heater

We present a 1×4 reconfigurable demultiplexer based on cascaded silicon microring resonators. The device is fabricated on a 0.18 μm complementary metal oxide semiconductor (CMOS) process. A homogeneous doped silicon slab heater is proposed and fabricated directly on the slab region of the microring resonator for thermal tuning. The flows of the heating currents in the heaters are parallel to the ring waveguide through the heavily doped slab regions located on both sides of the ring waveguide without through the waveguide core regions. The proposed doped heaters are experimentally verified with low-voltage operation and tuning efficiency of ～77 pm/mW. Without any tuning or trimming, predicted average channel spacing distribution in the whole free spectral range (FSR) is demonstrated. Full reconfigurability is also demonstrated in the demultiplexer with channel spacing of 2 nm (250 GHz) and 1 nm (125 GHz), corresponding to channel isolation of less than ?21 dB and ?16 dB, respectively. Such a low-voltage operation and reconfigurable demultiplexer is suitable for on-chip optical interconnect.     

Investigation of Q-switched InP-based 1550 nm semiconductor lasers

High energy picosecond pulse generation from a two contact tapered 5 quantum well (QW) InGaAlAs/InP diode laser (1550 nm) is investigated using a passive Q-switching technique. Single peak pulses with pulse energies as high as 500 pJ and durations of typically hundreds of picoseconds are obtained from the device by applying reverse bias voltages in the range of 0 V to ?18 V to the absorber section of the device. It is also demonstrated that more symmetrical Q-switched pulses are obtained by reducing the duration of electrical pulses applied to the gain section of the laser. Such an improvement is attributed to the reduced time of the population inversion in the gain section due to shorter electrical pulse. We also show comparatively the dependence of optical spectra on the reverse bias voltage for diode lasers emitting at 1550 nm and 1350 nm, and demonstrate that better spectral output is obtained from AlGaInAs lasers emitting at a wavelength of 1550 nm.     

Zero bias PIN photodetector based on gradient band distribution and doping gradient profile

Zero bias photodetector which was suitable for top-illuminated and side-illuminated was fabricated. Maximal bandwidth-efficiency product (BEP) value could be achieved when the epitaxial layer structure was optimized. The 3-dB bandwidth of the zero bias was 12.27 GHz, which was numerically above 80% of that maximum value. The measured external quantum efficiency of the photodetector was 17% at the zero bias and 1550 nm. The dark current of the photodetector with 12-μm diameter was less than 9 × 10⁻⁸ A at a reverse bias of 0.1 V. The influence of doping gradient profile on photodetector performance was illustrated by simulation comparison. The important aspects of the design of the high-speed low-bias photodetector were explained. The phenomenon of the photodetector at the reverse bias which was not the higher the better was explained. The improvement in performance of the photodetector was discussed. The fabrication process and the testing process were described in detail.     

Properties of a gold-deposited surface plasmon resonance-based glass rod sensor with various light-emitting diodes and its application to a refractometer

The performance of a simple sensor system prepared using gold (Au)-deposited glass rods of 1 to 4 mm in diameter with a deposition length of 100 mm based on surface plasmon resonance (SPR) is presented. The sensor properties of the Au-deposited glass rods of 2 mm in diameter with deposition lengths of 10 to 100 mm are also presented. The sensor system consists of a light-emitting diode (LED) as the light source and a photodiode (PD) as the detector. The response curves and sensor properties of the Au-deposited glass rod with a Au film thickness of 45 nm obtained by using three LEDs with yellowish green (563 nm), red (660 nm), and infrared (940 nm) emissions were investigated. The results were compared with those of a corresponding Au-deposited optical fiber sensor with a core diameter of 0.2 mm. Though the sensitivity, response, and detection limit of the Au-deposited glass rod sensor are lower than those of the optical fiber sensor, the fabrication and handling of the Au-deposited glass rod sensor are easier because of the robustness. Since the dielectric constant of Au changes with the light wavelength, the sensor properties of both the Au-deposited glass rod sensor and the optical fiber sensor depend strongly on the wavelength of the incident light and can be controlled by changing the LED emission wavelength. This sensor system is a new SPR-based refractometer with easy construction and operation. Ethanol concentrations in various spirits were measured with this SPR-based refractometer and the results agreed well with those measured with an Abbe refractometer.     

Vertical coupling characteristics between hybrid plasmonic slot waveguide and Si waveguide

For development of complementary metal–oxide–semiconductor (CMOS)-compatible integrated optical circuits, vertical directional coupling between a hybrid plasmonic slot waveguide and a Si waveguide is theoretically investigated in detail. To determine the vertical separation gap and efficient coupling length, we investigate the characteristics of the even and odd supermodes at a wavelength of 1.55 μm. The vertical coupler transfers 90% of the power carried by the Si waveguide to the hybrid plasmonic slot waveguide after normalizing to reference waveguides when the gap is 60 nm and the coupling length is 2.6 μm. Because of the lossy hybrid guided mode in the plasmonic waveguide, the transmitted power exhibits damped sinusoidal behavior depending on the overlapping length. The proposed vertical coupler shows more efficient light coupling between a dielectric and plasmonic waveguide in comparison to the other types of hybrid coupler, and can be exploited further for on-chip integrated opto-electronic circuits.     

Improvement of polarization extinction in silicon waveguide devices

The SOI based waveguide devices are found to be highly polarization sensitive. Unwanted polarization excitations can be attenuated by integrating a TE- or TM-pass polarizer. A large attenuation of TM-polarized light has been observed when a thin film of metal is coated on the top of silicon rib waveguide, while TE-polarized light remains almost unaffected. The attenuation of TM-polarized light is attributed to the plasmonic absorption of the evanescent field in the metal cladding. Typically, with an Al cladding of thickness ～ 100 nm and a length of 1 mm on top of a single-mode (λ ～ 1550 nm) SOI rib waveguide structure, TE vs TM extinction ratio of ～ 15 dB has been obtained. Integrating such waveguide polarizers in a directional coupler and MZI based DWDM channel interleaver, we have also achieved an improvement in polarization extinction by ～ 15 dB.     

Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique

Cuprous oxide (Cu₂O) nanocrystalline thin films were prepared on two types of substrates known as crystalline silicon and amorphous glass, by radio frequency reactive magnetron sputtering method. Scanning electron microscopy images confirmed that Cu₂O particles covered the entire surface of both substrates with smoothing distribution. The root mean square surface roughness for the prepared Cu₂O thin films on glass and Si (111) substrates is 4.16, and 3.36 nm, respectively. Meanwhile, X-ray diffraction results demonstrated that the two phases of Cu₂O and CuO were produced on Si (111) and glass substrates. The optical bandgap of Cu₂O thin films synthesised on glass substrate is 2.42 eV. Furthermore, the prepared Cu₂O nanocrystalline thin films have showed low reflectance value in the visible spectrum. Metal-Semiconductor-Metal photodetector based Cu₂O nanocrystalline thin films deposited onto Si (111) was fabricated using aluminium and platinum, with the current-voltage and photoresponse characteristic investigated under various applied bias voltages. The fabricated Metal-Semiconductor-Metal (M-S-M) photodetector had shown 126% sensitivity in the presence of 10 mW/cm² of 490 nm light with 1.0 V bias, displaying 90 and 100 ms response and recovery times, respectively. These findings have demonstrated the suitability of M-S-M Cu₂O photodetector as an affordable photosensor in the future.     

Compact and efficient coupler to interface hybrid dielectric-loaded plasmonic waveguide with silicon photonic slab waveguide

A coupler is proposed to interface a hybrid dielectric-loaded plasmonic waveguide (HDLPW) with a silicon photonic slab waveguide. The HDLPW is firstly designed and optimized to attain the best tradeoff between the mode confinement and the propagation distance. The designed coupler is inspired from the taper configuration and numerically modeled through finite-difference time-domain (FDTD) simulation. The results demonstrate that a high confinement and low loss of the energy is achieved from a silicon photonic slab waveguide into the dielectric slot of area 50×200 nm² in the HDLPW. The transmission attained through the coupler with a compact size of 400 nm is found to be as high as 80% (1 dB). Further, the planar nature of taper configuration makes the coupler easy to fabricate using the state-of-the-art CMOS facilities. The proposed coupler is useful in enabling the integration between photonic and hybrid plasmonic waveguides and thus realizing on-chip hybrid integrated circuits.     

High index contrast Er:Ta2O5 waveguide amplifier on oxidised silicon

We report a high index contrast erbium doped tantalum pentoxide waveguide amplifier. 2.3 cm long waveguides with erbium concentration of 2.7 × 10²⁰ cm^? 3 were fabricated by magnetron sputtering of Er-doped tantalum pentoxide on oxidised silicon substrates and Ar-ion milling with photolithographically defined mask. A net on-chip optical gain of ~ 2.25 dB/cm at 1531.5 nm was achieved with 20 mW of pump power at 977 nm launched into the waveguide. The pump threshold for transparency was 4.5 mW.     

10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 μm, 180 meV). However, whether 10.6 μm (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 μm infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film’s transmittance to 632.8 nm infrared light when the thin film is irradiate by CO₂ laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 μm laser. This indicates that 10.6 μm infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution.     

Ultrasmall optical logic gates based on silicon periodic dielectric waveguides

An ultrasmall silicon periodic dielectric waveguides-based multimode interference all-optical logic gate has been proposed. The device consists of three 205 nm wide single-mode input waveguides, a 1.1 μm wide and 5.5 μm long multimode interference waveguide, and three 205 nm wide single-mode output waveguides. The total length and width of the device are 13.7 μm and 3.2 μm, respectively. By changing the states of the input optical signals and/or control signals launched into the device, multifunctional logic functions including OR, NAND, NOR, and NOT gates are performed, and each logic function can be realized at a specific output waveguide in accordance with the launched control signals. The ultrasmall multifunctional logic device has potential applications in high density photonic integrated circuits.     

Near-white emitting QD-LED based on hydrophilic CdS nanocrystals

In this work we report fabrication of a nanocrystal (NC)-based hybrid organic–inorganic LED with structure of ITO/PEDOT:PSS/PVK/CdS-NCs/(Al or Mg:Ag). The hydrophilic CdS NCs were synthesized using a novel aqueous thermochemical method at 80 °C and sizes (around 2 nm) were controlled by thioglycolic acid (TGA) as the capping agent. The favorite feature of these NCs is their relatively high emission intensity and broad, near-white emission. The hydrophilic CdS NCs were successfully spin coated using Triton X-100 as the wetting agent. The fabricated LEDs demonstrated a turn on voltage about 7 V for Al metallic contact. The electroluminescence was a broad spectrum at 540 and 170 nm width, which was about 50 nm red shifted compared to photoluminescence spectra. The CIE color coordinates of the LED at (0.33, 0.43) demonstrated a near white light LED with an emission on green–yellow boundary of white. Annealing of the device up to 190 °C had a positive effect on the performance, possibly due to better contacts between layers. Replacing Al contacts with Mg:Ag reduced the turn-on voltage to 6 V and changed CIE color coordinate to (0.32, 0.41). The EL peak was also shifted to 525 nm, with a brightness of 15 Cd/m² at working voltage of 15 V. The current efficiency and external quantum efficiency of device were 0.08 Cd/A and 0.03% at current densities higher than 10 mA/cm².     

条形叉指n阱和p衬底结的硅LED设计及分析

采用0.35μm双栅标准CMOS工艺最新设计和制备了叉指型SiLED发光器件。器件结构采用n阱和p衬底结,n阱为叉指结构,嵌入到p衬底中而结合成Sipn结LED。观察了SiLED发光显微图形及实际器件的版图,并在对器件进行了正、反向I-V特性测试、光功率及光谱特性的测量。SiLED的正向偏置时开启电压为0.9V,反向偏置时在15V左右可观察到发光。器件在室温下反向偏置时,10V,100mA电流下所得输出光功率为12.6nW,发光峰值在758nm处。     

The oscillation condition and optical detection of series photodetector frequency circuit system matched with PMMA

In this study, the oscillation conditions for series photodetector frequency circuit system were proposed and verified experimentally. The effect of the capacitance C_p and oscillator phase θ on the oscillation ability of series photodetector frequency circuit system was investigated. It revealed that series photodetector frequency circuit system possessed excellent oscillation ability, but the oscillation ability decreased with increasing oscillator phase or decreasing capacitance C_p, even resulted in a cease-to oscillate zone. Moreover, this study elucidated the frequency response and optical detection of series photodetector frequency circuit system matched with PMMA for fluorescence dye concentration. In accordance with Hex fluorescence dye concentrations and frequency responses, the detection limit of fluorescence dye concentration 3.3 pmol/L can be measured by 100 MHz sensor system matched with PMMA. The results also showed that the frequency shift of 100 MHz sensor system matched with PMMA was linearly related to the logarithm of fluorescence dye concentration from 3.3 pmol/L to 33.3 μmol/L.     

A study on wavelength dependence and dynamic range of the quadratic response of commercial grade light emitting diodes

Experimental results of a study on the wavelength dependence and the dynamic range of the quadratic response of commercial grade light emitting diodes (LEDs) are reported over a broad spectral range of 680 nm to 1080 nm using ~ 100 fs duration laser pulses from cw mode locked laser oscillator. A large dynamic range of the quadratic response has been demonstrated in a reverse biased LED. The observed dynamic range compares well with that obtained using a biased photomultiplier tube with large internal gain.     

Soliton propagation optimization and dynamic modulation in photonic crystal waveguide with polystyrene background

Bright optical soliton propagation properties near the left band edge of photonic crystal waveguide (PCW) are numerically investigated. Compared with the normal PCW with air background, by employing polystyrene as PCW background and adjusting the structure parameters simultaneously, the required soliton peak power sharply decreases from 8.63 × 10⁶ W/m to 9.98 × 10² W/m. The influence of optical loss on soliton propagation is numerically investigated. The dynamic modulation of the soliton propagation in PCW is realized, and a modulation range of 459 nm wavelength for the soliton transmission has been achieved. Simulation results show that the transmission wavelength, required soliton peak power and delay time decrease almost linearly as the external modulated voltage increases; the modulation sensitivities are 8.316 nm/V, 3.416 W/m/V and 16.6 ps/V, respectively.     

The study of structure and optoelectronic properties of ZnS and ZnO films on porous silicon substrates

ZnS and ZnO films were prepared on porous silicon (PS) substrates with the same porosity by pulsed laser deposition (PLD), and the structural, optical and electrical properties of ZnS and ZnO films on PS were investigated at room temperature by X-ray diffraction (XRD), scanning electron microscope (SEM), optical absorption measurement, photoluminescence (PL) and I–V characteristic studies. The prepared ZnS was obtained in the cubic phase along β-ZnS (1 1 1) orientation which showed a perfect match with the earlier report while ZnO films were obtained in c-axis orientation. There appeared some cracks in the surface of ZnS and ZnO films due to the roughness of PS substrates. Luminescence studies of ZnS/PS and ZnO/PS composites indicated room temperature emission in a broad, intense, visible photoluminescence band, which cover the blue emission to red emission, exhibiting intensively white light emission. Based on the I–V characteristic, ZnS/PS heterojunction exhibited the rectifying junction behavior, while the I–V characteristic of ZnO/PS heterostructure was different from that of the common diode, whose reverse current was not saturated.     

Arrayed waveguide grating-based demultiplexer with two central wavelengths

In this paper we have presented an arrayed waveguide grating with two central wavelengths, 1550.12 nm and 1310.12 nm. Introducing a novel architecture for outputs of system, if input light to arrayed waveguide grating consists of wavelengths around 1550.12 nm, proposed system will act as 16 channels demultiplexer with channel spacing of 1.6 nm. On the other hand when input wavelengths are distributed around 1310.12 nm, the same arrayed waveguide grating will divide the input to 27 channels with channel spacing of 0.68 nm.     

1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

In this work a waveguide-integrated 2 × 2 switch operating at the infrared communication wavelength of 1550 nm is proposed and theoretically discussed. The device is based on the total internal reflection (TIR) phenomenon and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapour deposition (PECVD) techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be therefore achieved at the interface by acting on the temperature. The device is integrated in a 4 μm-wide and 3 μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. We calculated an output crosstalk always better than 24 dB and insertion losses as low as 3.5 dB.     

RGB tricolor produced by white-based top-emitting organic light-emitting diodes with microcavity structure

RGB pixels by microcavity top-emitting organic light-emitting diode (TOLED) is beneficial to both minimizing the loss of light and improving the color purity and the efficiency. Based on the multi-emitting layers, white organic light-emitting diodes (OLEDs) and microcavity TOLEDs were prepared. TOLEDs were fabricated using Ag/ITO as the reflector and adjusting layer, Al/Ag as semi-transparent cathode, Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light emitting layer. By adjusting the thickness of ITO, optical length of cavity and the color of the device have been changed. So we get RGB tricolor devices. The peak wavelengths are 476 nm, 539 nm, 601 nm, Commission Internationale d’Eclairage (CIE) coordinates are (0.133, 0.201), (0.335, 0.567), (0.513, 0.360), FWHM are 32 nm, 50 nm, 73 nm for blue, green and red, respectively.