Antibody and DNA dual-labeled gold nanoparticles: Stability and reactivity

Gold nanoparticles labeled by both antibody (IgG) and single stranded DNA (ss-DNA) have been synthesized and characterized. The stability and reactivity of the dual-labeled nanoparticles were compared with the conventional IgG or ss-DNA modified nanoparticles. It was found that the IgG adsorption significantly improved the stability of the nanoparticles in aqueous solution, which is beneficial for attaching ss-DNA. The presence of IgG also effectively prohibits the desorption of ss-DNA against dithiothreitol (DTT) displacement. The coverage on dual-labeled nanoparticles was found to be 50 ± 15 ss-DNA/nanoparticle and 10 ± 2 IgG/nanoparticle, respectively, compared to the value of 70 ± 15 ss-DNA/nanoparticle of only ss-DNA-labeled gold nanoparticles. Dot-immuno and cross-linking experiments confirmed that both the IgG and ss-DNA retained their bioactivity on the nanoparticle surface. The dual-labeled nanoparticles have potential to be used as novel bio-probes for ultrasensitive detection.     

Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte

Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1 × 10¹⁷ cm⁻³ and 1 × 10¹⁸ cm⁻³ in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified by electrochemical deposition of gold in a pulsed voltage regime. Photoluminescence and photosensitivity measurements indicate efficient light trapping and porous surface passivation. The photoluminescence and electrical resistivity of the membranes are sensitive to the adsorption of H₂ and CO gas molecules. These properties are also influenced by the deposition of Au nanoparticles inside the pores.     

Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films

Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV-visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (2 2 2) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of ∼1.0 nm. Bandgap energy of the films depends on thickness and varies from 3.71 eV to 3.94 eV. It is observed that resistivity of the films decreases with thickness, while mobility increases.     

Optical and electrical properties of aluminum-doped ZnO thin films grown by pulsed laser deposition

Transparent aluminum-doped zinc oxide (AZO) thin films were deposited on quartz glass substrates by pulsed laser deposition (PLD) from ablating Zn-Al metallic targets. The structural, electrical and optical properties of these films were characterized as a function of Al concentration (0-8 wt.%) in the target. Films were deposited at a low substrate temperature of 150 °C under 11 Pa of oxygen pressure. It was observed that 2 wt.% of Al in the target (or 1.37 wt.% of Al doped in the AZO film) is the optimum concentration to achieve the minimum film resistivity and strong ultraviolet emission. The presence of Al in the ZnO film changes the carrier concentration and the intrinsic defects.     

Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition

Transparent indium-doped cadmium oxide (In-CdO) thin films were deposited on quartz glass substrates by pulse laser deposition (PLD) from ablating Cd-In metallic target at a fixed pressure 10 Pa and a fixed substrate temperature 300 °C. The influences of indium concentrations in target on the microstructure, optical and electrical performances were studied. When the indium concentration reaches to 3.9 wt%, the as-deposited In-CdO film shows high optical transmission in visible light region, obviously enhanced direct band gap energy (2.97 eV), higher carrier concentration and lower electric resistivity compared with the undoped CdO film, while a further increase of indium concentration to 5.6 wt% induces the formation of In₂O₃, which reverse the variation of these parameters and performance.     

Van der Pauw resistivity measurements on evaporated thin films of cadmium arsenide, Cd3As2

Cadmium arsenide is a II-V semiconductor, exhibiting n-type intrinsic conductivity with high mobility and narrow bandgap. It is deposited by thermal evaporation, and has shown the Schottky and Poole-Frenkel effects at high electric fields, but requires further electrical characterisation. This has now been extended to low-field van der Pauw lateral resistivity measurements on films of thickness up to 1.5 μm. Resistivity was observed to decrease with increasing film thickness up to 0.5 μm from about 3 × 10⁻³ Ω m to 10⁻⁵ Ω m, where the crystalline granular size increases with film thickness. This decrease in resistivity was attributed to a decrease in grain boundary scattering and increased mobility. Substrate temperature during deposition also influenced the resistivity, which decreased from around 10⁻⁴ Ω m to (10⁻⁵ to 10⁻⁶) Ω m for an increase in substrate deposition temperature from 300 K to 423 K. This behaviour appears to result from varying grain sizes and ratios of crystalline to amorphous material. Resistivity decreased with deposition rate, reaching a minimum value at about 1.5 nm s⁻¹, before slowly increasing again at higher rates. It was concluded that this resulted from a dependence of the film stoichiometry on deposition rate. The dependence of resistivity on temperature indicates that intercrystalline barriers dominate the conductivity at higher temperatures, with a hopping conduction process at low temperatures.     

Ag-N doped ZnO film and its p-n junction fabricated by ion beam assisted deposition

Ag-N doped ZnO film was synthesized by ion beam assisted deposition and its electrical properties and annealing property were investigated. The films remained p-type even after annealing at 400 °C in air for 10 min. While the annealing temperature went up to 500 °C, the conduction type of these films shifted from p-type to n-type. The p-type ZnO film revealed low resistivity (0.0016 Ω cm), low Hall mobility (0.65 cm² V⁻¹ s⁻¹) and high carrier concentration (5.8 × 10²⁰ cm⁻³). ZnO p-n homojunction consisting of a p-type layer (Ag-N doped ZnO film) and an n-type layer (In-doped ZnO film) had been fabricated by ion beam assisted deposition. With electrical measurement, its current-voltage curve had a typical rectifying characteristic with current rectification ratio of 25 at bias ±5 V and a reverse current of 0.01 mA at −5 V. The depletion width was estimated 3.8 nm by using p-n junction equation.     

Surface plasmon resonance biosensor modified with multilayer silver nanoparticles films

We alternately deposited negatively charged Ag-(3-mercaptopropionic acid) (Ag-MPA) sol and positively charged poly-(diallyldimethylammonium) (PDDA) on gold substrate modified with 4-aminothiophenol (4-ATP), through electrostatic layer-by-layer (LBL) self-assembly. We characterized the prepared three-dimensional Ag/PDDA multilayer films by surface plasmon resonance (SPR) and atomic force microscope (AFM). The thickness of each film in the multilayer films, the deposition effect of Ag nanoparticles, and the processing of DNA adsorption are characterized by SPR. AFM characterization shows that DNA/3(PDDA/Ag)/4-ATP composite is uniformly and firmly distributed on the surface of gold films. Compared with other sensors, gentamicin could be highly sensitively measured by DNA/3(PDDA/Ag)/4-ATP/Au sensor. There is a good linear relationship in the concentration range of 5 × 10⁻⁸ to 1 × 10⁻⁴ mol/L. The linear equation is found to be Δθ_SPR = 1.3521 × 10⁻⁵c + 0.08641 (the correlation coefficient is 0.9983) with detection limit of 1 × 10⁻⁹ mol/L. Since such LBL assembly film is simple to prepare, the work described here provides an effective method for studying small molecule drugs on SPR.     

Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition

The correlation between the resistivity and the structure/composition in the aluminum doped zinc oxide (AZO) films fabricated by the ion beam co-sputtering deposition at room temperature was investigated. The various compositions of AZO films were controlled by the sputtered area ratio of Al to Zn target. The structure, Al concentrations and resistivities of the as-deposited films were determined by X-ray diffractometer (XRD), energy dispersive spectrometer (EDS) and four-point probe station, respectively. The lowest resistivity of the deposited film was 5.66 × 10⁻⁴ Ω-cm at the 0.7 wt.% aluminum concentration. The most intense ZnO (0 0 2) diffraction peak, the largest grain size, the longest mean free path, and the highest free carrier concentration in the film result in the lowest resistivity of 5.66 × 10⁻⁴ Ω-cm at room temperature; simultaneously, the thermal stability of the resistivity of the AZO film as a function of the sample temperature was investigated. Below 200 °C the film's resistivity was almost kept at a fixed value and the lowest resistivity of 4.64 × 10⁻⁴ Ω-cm at 247 °C was observed.     

Surface-enhanced Raman scattering effect of gold nanoparticle arrays: The influence of annealing temperature,excitation power and array thickness

Gold nanoparticle arrays are fabricated for surface-enhanced Raman scattering (SERS) and the effect of the annealing temperature, the thickness of nanoparticle array and the exciting power on the SERS signals are investigated. The particle distribution and particle size are dense and uniform on the glass substrate when the 10 nm gold film was annealed at 250 °C and strong SERS signals for Rhodamine 6G were achieved via a 532 nm excitation with a 10 mW power. The SERS signal at 1650 cm⁻¹ is enhanced more than 10 times as compared to that of the gold film without annealing. The strong SERS behavior of gold nanoparticle arrays may broaden the SERS applications in biomedical and analytical chemistry.     

Electron beam lithography designed chemical nanosensors based on localized surface plasmon resonance

Efficient nanochemosensors designed by electron beam lithography and based on localized surface plasmon resonance excited on noble metal nanocylinders are presented. Using localized surface plasmon resonance spectroscopy, we report here a high sensitivity corresponding to a density of about 18 × 10⁻²¹ mol of adsorbate per nanocylinders, we present the results obtained with gold and silver nanoparticles. This detection corresponds to less than one monolayer of molecules adsorbate on the nanoparticle. Additionally a subsequent layers deposition of polyelectrolytes is used to detect very thin polymer films. Although the results presented in this work are far from conclusive, the advantages of these nanochemosensors discussed here open the possibilities of further developments in a wide range of chemical and medical applications.     

Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, E_g, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10⁶-10⁷ Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10² Ω cm were observed in the optical band gap, E_g, and electrical resistivity, respectively.     

Influence of Sb doping on crystal structure and electrical property of SnO2 nanoparticles prepared by chemical coprecipitation

Sb doped SnO₂ (ATO) nanoparticles with Sb doping concentrations ranging from 0% to 20% (Sb/Sb+Sn) have been prepared by chemical coprecipitation using metallic Sn and SbCl₃ as raw materials. The influence of Sb doping concentration on crystal structure and electrical property was studied in detail. Results indicated that all ATO nanoparticles possessed the same tetragonal rutile structure as that of bulk SnO₂. The average crystal size of the ATO nanoparticles decreased from 16 to 7 nm by increasing the Sb doping concentration. The unit-cell volume of ATO nanoparticles was either expanded or contracted, strongly depending on the Sb doping concentration. The electrical resistivity decreased sharply from 111 to minimum of 1.05 Ω cm when the Sb doping concentration was increased from 0% to 15% and then increased slightly to 1.42 Ω cm when the Sb doping concentration was increased from 15% to 20%. Finally, high resolution X-ray photoelectron spectroscopy (XPS) measurement was employed to investigate the valence state of Sb in samples with various Sb doping levels.     

Laser sintering of Cu paste film printed on polyimide substrate

We here show that highly conductive copper films are obtainable from Cu paste by laser sintering. The Cu paste synthesized using an organo-metallic compound was screen-printed onto polyimide substrate and the printed films were scanned by an ultraviolet laser beam at 355 nm under nitrogen atmosphere. Very compact microstructure was observed throughout the whole thickness and the sintered films were mechanically robust. Although Cu is known susceptible to oxidation, no Cu oxides were incorporated into the film during laser sintering. An electrical resistivity of 1.86 × 10⁻⁵ Ω cm was obtained. This resistivity is several orders of magnitude lower than those reported for the copper nanoparticle paste thermally sintered under N₂ or H₂ atmosphere.     

Direct conversion of a metal organic compound to epitaxial Sb-doped SnO2 film on a (0 0 1) TiO2 substrate using a KrF laser, and its resulting electrical properties

Epitaxial Sb-doped SnO₂ (0 0 1) thin film on a TiO₂ (0 0 1) substrate was successfully prepared by laser-assisted metal organic deposition at room temperature. The effects of the precursor thin film and laser fluence on the resistivity, carrier concentration, and mobility of the Sb-doped SnO₂ film were investigated. The resistivity of the Sb-doped SnO₂ film prepared by direct irradiation to metal organic film is one order of magnitude lower than that of film prepared by irradiation to amorphous Sb-doped SnO₂ film. From an analysis of Hall measurements, the difference between the resistivity of the Sb-doped SnO₂ film prepared using the metal organic precursor film and that of amorphous precursor film appears to be caused by the mobility. Direct conversion of the metal organic compound by excimer laser irradiation was found to be effective for preparing epitaxial Sb-doped SnO₂ film with low resistivity.     

Sonication-assisted layer-by-layer deposition of gold nanoparticles for highly conductive gold patterns

Sonication-assisted layer-by-layer (LBL) deposition of gold nanoparticles (GNPs) was carried out in an attempt to prepare highly conductive gold patterns on polyimide substrates. First, sonication time was optimized with GNPs (12.8 nm) whose size was large enough to be analyzed by FE-SEM in order to evaluate the surface coverage. Next, multilayer formation (4, 8 and 12 layer) was confirmed using ethanedithiol (EDT) as linker molecules under optimized conditions by measuring their UV absorption, near-IR (NIR) transmittance, thickness, and electrical conductivity. Finally, 20-layer films using small GNPs (2.5 nm) were prepared with or without patterning, followed by sintering at 150 °C for 1 h, which provided clean gold patterns with high electrical conductivity (2.5 × 10⁵ Ω⁻¹ cm⁻¹).     

Growth of Au thin film on Cu-modified Si(1 1 1) surface

Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature.     

金纳米棒的飞秒激光组装研究

金属纳米粒子对于研究表面等离子体共振具有非常重要的意义,其自组装形成的功能组装体能够展现出更加优异的整体协同性能.本文通过飞秒激光加工对金纳米棒直接进行组装,不引入其它的修饰剂,过程简单、快速(约1 min),不仅保留了金纳米棒表面等离子特性,且可以实现金纳米棒的任意精细图案化.将组装的微纳结构用于微流控芯片表面增强拉曼散射探测,可以得到很好的增强效果,为等离子体器件的制备提供了新的方法.     

Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition

This study investigated the optical and electrical properties of Nb-doped TiO₂ thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO₂ thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O₂ was suitable to produce anatase-type TiO₂. A Nb-doped TiO₂ thin film attained a resistivity as low as 6.7 × 10⁻⁴ Ω cm after annealing at 350 °C in vacuum (<10⁻⁵ Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region.     

Influence of deposition temperature on morphological, optical, electrical and opto-electrical properties of highly textured nano-crystalline spray deposited CdO:Ga thin films

This study investigated the effect of deposition temperature on the morphological, optical, electrical and opto-electrical properties of CdO:Ga films prepared by a cost effective spray pyrolysis deposition method. The substrate temperature was varied from 275 to 375 °C, in steps of 25 °C. The XRD patterns reveal that films are polycrystalline with cubic structure and are highly textured along (2 0 0) preferential orientation. The crystallinity and crystallite size increases with deposition temperature. The SEM images confirmed these results and showed larger grains and more crystallization for the higher deposition temperature. The electrical studies show degenerate, n-type semiconductor nature with minimum resistivity of 1.93 × 10⁻⁴ Ω cm. Temperature dependence of electrical conductivity shows a semiconducting behavior with a spectrum of activation energy. The electrical conductivity of the film dependence of temperature shows the thermally activated band conduction mechanism. The optical gap varies from 2.54 to 2.74 eV. The highest figure of merit observed in the present study is 9.58 × 10⁻³ Ω⁻¹ and shows improvement than our previous reports. The blue shift of absorption edge (or bandgap widening BGW) can be described by the Moss-Burstein (M-B) effect in which the optical absorption edge of a degenerate n-type semiconductor is shifted towards higher energy.