Device model for poly(o‐methoxyaniline) field‐effect transistor

We present a detailed study of the electric mechanism of a thin poly(o‐methoxyaniline) (POMA) field‐effect transistor. The device was prepared using Al‐Si/SiO₂/(interdigitated gold lines array)/POMA structure as the gate electrode, insulating layer, source‐drain electrodes, and active layer, respectively. A model is presented for the electrical characteristics of such a device that encompasses the disordered properties of the POMA, the source‐drain electrical‐field dependence of hole mobility, and the carrier and mobility gradients in directions perpendicular to the polymer–oxide interface. The fittings of source‐drain current versus source‐drain voltage, having as parameters the gate voltage, is in good agreement with the experimental data, and the dependence of both the carrier saturation velocity and of the carrier mobility with the gate voltage are obtained. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 74–78, 2005     

Coaxially gated in-wire thin-film transistors made by template assembly

Nanowire field effect transistors were prepared by a wet chemical template replication method using anodic aluminum oxide membranes. The membrane pores were first lined with a thin SiO2 layer by the surface sol-gel method. Au, CdS (or CdSe), and Au wire segments were then sequentially electrodeposited within the pores, and the resulting nanowires were released by dissolution of the membrane. Electrofluidic alignment of these nanowires between source and drain leads and evaporation of gold over the central CdS (CdSe) stripe affords a "wrap-around gate" structure. At VDS = -2 V, the Au/CdS/Au devices had an ON/OFF current ratio of 103, a threshold voltage of 2.4 V, and a subthreshold slope of 2.2 V/decade. A 3-fold decrease in the subthreshold slope relative to that of planar nanocrystalline CdSe devices can be attributed to coaxial gating. The control of dimensions afforded by template synthesis should make it possible to reduce the gate dielectric thickness, channel length, and diameter of the semiconductor segment to sublithographic dimensions while retaining the simplicity of the wet chemical synthetic method.     

Gating motions in voltage-gated potassium channels revealed by coarse-grained molecular dynamics simulations

Voltage-gated potassium (Kv) channels are ubiquitous transmembrane proteins involved in electric signaling of excitable tissues. A fundamental property of these channels is the ability to open or close in response to changes in the membrane potential. To date, their structure-based activation mechanism remains unclear, and there is a large controversy on how these gates function at the molecular level, in particular, how movements of the voltage sensor domain are coupled to channel gating. So far, all mechanisms proposed for this coupling are based on the crystal structure of the open voltage-gated Kv1.2 channel and structural models of the closed form based on electrophysiology experiments. Here, we use coarse-grain (CG) molecular dynamics simulations that allow conformational changes from the open to the closed form of the channel (embedded in its membrane environment) to be followed. Despite the low specificity of the CG force field, the obtained closed structure satisfies several experimental constraints. The overall results suggest a gating mechanism in which a lateral displacement the S4-S5 linker leads to a closing of the gate. Only a small up-down movement of the S4 helices is noticed. Additionally, the study suggests a peculiar upward motion of the intracellular tetramerization domain of the channel, hence providing a molecular view on how this domain may further regulate conduction in Kv channels.     

二氧化硅栅绝缘层的制备与表面修饰

研究了有机薄膜晶体管的二氧化硅栅绝缘层的性质。二氧化硅绝缘层的制备采用热生长法，氧化气氛是O₂(g)+H₂O(g)，工艺为干氧-湿氧-干氧的氧化过程。制得的绝缘层漏电流在10^-9 A左右。以该二氧化硅作为有机薄膜晶体管的栅绝缘层，并五苯作为有源层制作了有机薄膜晶体管器件。实验表明采用十八烷基三氯硅烷(OTS)进行表面修饰的器件具有OTS/SiO₂双绝缘层结构，可以有效地降低SiO₂栅绝缘层的表面能并改善表面的平整度。修饰后器件的场效应迁移率提高了1.5倍、漏电流从10^-9 A降到10^-10 A、阈值电压降低了5 V、开关电流比从10⁴增加到10⁵。结果显示具有OTS/SiO₂双绝缘层的器件结构能有效改进有机薄膜晶体管的性能。     

The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphology

The response to ammonia of silicon-based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices having either evaporated or sputtered Pt gate electrodes has been studied. A substantial difference in ammonia sensitivity was observed between these two types of device, which is thought to be related to differences in morphology between the two types of gate electrode; devices having evaporated Pt gate electrodes, which are non-continuous, are very ammonia sensitive, whereas devices having sputtered Pt gates, which are continuous, are not ammonia sensitive. However, both the evaporated and sputtered gate devices exhibit a similar response to hydrogen (typically, changes in threshold voltage (V_T) of approximately -420 mV and -350 mV respectively to 500 ppm hydrogen at 150 °C). The ammonia sensitivity of the evaporated Pt-gate MOSFET is dependent on both temperature and ageing effects; the optimum operating temperature of this device is 175 °C, and a burn-in period of approximately 48 h at 200 °C is necessary before the maximum response to ammonia is observed. The humidity response of both evaporated and sputtered Pt-gate MOSFET devices has been studied at 175 °C; a change from 20 to 95% r.h. does not produce a significant response from either of these devices (ΔV_T is typically -35 mV and -5 mV respectively).     

Large gate modulation in the current of a room temperature single molecule transistor

We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of magnitude increase in the source-drain current, in the fashion of an n-type FET. The large current increase is attributed to an electron transport mediated by the lowest empty molecular energy level when it lines up with the Fermi level.     

Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates

We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.     

Controlling Field‐Effect Transistor Biosensor Electrical Characteristics Using Immunosorbent Assay

A method to modulate the signal of field‐effect transistor biosensors using an immunosorbent assay is described. A model system is used to show that binding of a secondary antibody, to which highly charged gold colloids are attached, to an analyte on the device floating gate can be used to induce strong electrostatic effects, which affect the device threshold voltage and source‐drain current. This process may be used for signal amplification, with the secondary binding specificity allowing for improved signal to noise ratio, which is of great importance for early disease detection.     

Reversible Logic Gates Based on Enzyme‐Biocatalyzed Reactions and Realized in Flow Cells: A Modular Approach

Reversible logic gates, such as the double Feynman gate, Toffoli gate and Peres gate, with 3‐input/3‐output channels are realized using reactions biocatalyzed with enzymes and performed in flow systems. The flow devices are constructed using a modular approach, where each flow cell is modified with one enzyme that biocatalyzes one chemical reaction. The multi‐step processes mimicking the reversible logic gates are organized by combining the biocatalytic cells in different networks. This work emphasizes logical but not physical reversibility of the constructed systems. Their advantages and disadvantages are discussed and potential use in biosensing systems, rather than in computing devices, is suggested.     

A new anion-sensitive biosensor using an ion-sensitive field effect transistor and a light-driven chloride pump,halorhodopsin

A new biosensor sensitive to chloride anion using a light-driven chloride pump protein, halorhodopsin (hR), and an ion-sensitive field effect transistor (ISFET) has been developed. Membrane vesicles of halophilic bacteria containing hR were immobilized in the matrix of polyvinylbutyral resin on the surface of the ISFET. The gate voltage of this device changed in the min time scale under yellow light illumination. The response for chloride anion increased according to the increase of chloride anion concentration in the bulk aqueous phase. In the dark, the gate potential did not change even in the presence of chloride anion. These chloride-dependent gate potential changes of the hR-ISFET indicate that the chloride pumping by hR is active on the ISFET and that ISFET detects the light-dependent chloride transport by hR.     

Acetylcholine Sensor Based on Ion Sensitive Field Effect Transistor and Acetylcholine Receptor

Abstract

A new type of acetylcholine sensor was made with an Ion Sensitive Field Effect Transistor (ISFET) and acetylcholine receptor. The acetylcholine receptor was fixed on a polyvinylbutyral membrane which covered the ISFET gate. When acetylcholine was injected into this system, the differential gate output voltage gradually Shifted to the positive side and reached a constant value. This response was due to the positive charge of acetylcholine. A linear relationship was obtained between the initial rate of the differential gate output voltage change and the logarithmic value of the acetylcholine concentration. Acetylcholine was fixed in the range 0.1-10μM. When the acetylcholine receptor was immobilized with the lipid membrane, the response was amplified with both the positive charge of acetylcholine and sodium ion flux through the acetylcholine receptor's channel. Therefore, the difference in the differential voltage between the acetylcholine receptor-ISFET systems with and without the lipid membrane was caused by sodium ion flux through the acetylcholine receptor's channel.     

电场作用下苏氨酸的电流特性研究

制备了以液态苏氨酸为沟道材料的四端有机场效应晶体管,观测了其随着栅极电压的不同呈现出源漏两极之间不同的电学特异现象;还观测了苏氨酸在外电场作用下,阻抗随着源漏之间电压频率变化的关系,提出一个极性液体模型解释了其导电机理。     

Compact, high voltage power supply for the lab-on-a-chip

The design, construction and operation of a simple, inexpensive and compact high voltage power supply (HVPS) for use in conjunction with a simple cross capillary electrophoresis microchip is presented. The microchip HVPS utilizes a single high voltage power supply (15 kV), a voltage-divider network, to give the voltages necessary to operate a gated injection valve, and two high voltage relays for switching between the open and closed gate sequences of the injection. In order to accommodate the application of different simple cross microchip dimensions, a set of equations for defining the resistor network and ensuring proper gate performance are presented.     

Interfacing Synthetic DNA Logic Operations with Protein Outputs

DNA logic gates are devices composed entirely of DNA that perform Boolean logic operations on one or more oligonucleotide inputs. Typical outputs of DNA logic gates are oligonucleotides or fluorescent signals. Direct activation of protein function has not been engineered as an output of a DNA‐based computational circuit. Explicit control of protein activation enables the immediate triggering of enzyme function and could yield DNA computation outputs that are otherwise difficult to generate. By using zinc‐finger proteins, AND, OR, and NOR logic gates were created that respond to short oligonucleotide inputs and lead to the activation or deactivation of a split‐luciferase enzyme. The gate designs are simple and modular, thus enabling integration with larger multigate circuits, and the modular structure gives flexibility in the choice of protein output. The gates were also modified with translator circuits to provide protein activation in response to microRNA inputs as potential cellular cancer markers.     

Optimization of organic electrochemical transistors for sensor applications

Despite the recent interest in organic electrochemical transistors (OECTs) as chemical and biological sensors, little is known about the role that device architecture and materials parameters play in determining sensor performance. We use numerical modeling to establish design rules in two regimes of operation: We find that for operation as an ion‐to‐electron converter, the response of OECTs is maximized through the use of a gate electrode that is much larger than the channel or through the use of a nonpolarizable gate electrode. Improving the conductivity of the polymer and using a channel geometry that maximizes channel width and thickness, and minimizes channel length helps increase the response. For operation as an electrochemical sensor, the sensitivity is maximized in OECTs with gate electrodes that are smaller than their channels. The sensitivity can be improved by increasing the charge carrier mobility and the capacitance per unit area of the conducting polymer, and also its ability to be penetrated by ions from the electrolyte. A channel geometry that maximizes channel width and minimizes channel length also improves sensitivity. © 2010 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2010     

Parametrical studies of electroosmotic transport characteristics in submicrometer channels

Spatially two-dimensional nonequilibrium mathematical model describing electroosmotic flow through a submicrometer channel with an electric charge fixed on the channel walls is presented. This system is governed by the hydrodynamic, electrostatic, and mass transport phenomena. The model is based on the coupled mass balances, Poisson, Navier-Stokes, and Nernst-Planck equations. Nonslip boundary conditions are employed. The effect of an imposed electric field on the system behavior is studied by means of a numerical analysis of the model equations. We have obtained the following findings. If the channel width is comparable to the thickness of the electric double layer, the system behaves as an ion-exchange membrane and the dependence of the electric current passing through the channel on the applied voltage is strongly nonlinear. In the case of negatively (positively) charged walls, a narrow region of very low conductivity (so-called ionic gate) is formed in the free electrolyte near the channel entry facing the anode (cathode) side. For a wide channel, the electric current is proportional to the applied voltage and the velocity of electrokinetic flow is linearly proportional to the electric field strength. Complex hydrodynamics (eddy formation and existence of ionic gates) is the most interesting characteristics of the studied system. Hence, current-voltage and velocity-voltage curves and the corresponding spatial distributions of the model variables at selected points are studied and described in detail.     

A comparative study of a polyindole-based microelectrochemical transistor in aqueous and non-aqueous electrolytes

The behaviour of a polyindole-based microelectrochemical transistor in aqueous and non-aqueous electrolytes is described. The polyindole film was grown onto two closely spaced (100 μm) platinum microelectrodes by anodic oxidation of indole (10 mM) from 0.1 M tetrabutylammonium perchlorate in dichloromethane at 1.1 V vs. Ag/AgCl. The polymerization was carried out for a sufficiently long time in order to connect both Pt microelectrodes, which operated as a transistor when immersed in an electrolytic solution. In this transistor, one microelectrode was a “source” and the other a “drain”; the Ag/AgCl wire reference electrode was used as a “gate”. The drain current (current between source and drain) was modulated by varying the gate potential (potential between source and gate) at a fixed drain potential (potential between source and drain). The transconductances of the transistor were estimated as 0.98 mS/cm and 20.6 mS/cm of channel width (separation between two microelectrodes) in aqueous and non-aqueous solutions, respectively. Received: 6 April 1999 / Accepted: 24 August 1999     

Temperature dependence of the field effect mobility of solution-grown germanium nanowires

The temperature dependence of the field effect mobility was measured for solution-grown single-crystal Ge nanowires. The nanowires were synthesized in hexane from diphenylgermane by the supercritical fluid-liquid-solid process using gold nanocrystals as seeds. The nanowires were chemically treated with isoprene to passivate their surfaces. The electrical properties of individual nanowires were then measured by depositing them on a Si substrate, followed by electrical connection with Pt wires using focused ion beam assisted chemical vapor deposition. The nanowires were positioned over TaN or Au electrodes covered with ZrO2 dielectric that were used as gates to apply external potentials to modulate the conductance. Negative gate potentials increased the Ge nanowire conductance, characteristic of a p-type semiconductor. The temperature-dependent source/drain current-voltage measurements under applied gate potential revealed that the field effect mobility increased with increasing temperature, indicating that the carrier mobility through the nanowire is probably dominated either by a hopping mechanism or by trapped charges in fast surface states.     

Phosphate ion-sensitive coated-wire/field-effect transistor electrode based on cobalt phthalocyanine with poly(vinyl chloride) as the membrane matrix

An ion-selective coated-wire/field-effect transistor electrode responding to dihydrogenphosphate is described. The device consists of a coated-platinum wire electrode connected to the gate of a conventional field-effect transistor. Cobalt phthalocyanine is used as ion-exchange electroactive substance and poly(vinyl chloride) as the membrane matrix. The characteristics of the device are investigated and its response is studied by two methods, the linear dependence of the square root of the drain current in the saturated region on the logarithm of ion activity for sodium dihydrogenphosphate, and the dependence of the gate-source potential on the logarithm of ion activity of the same ion. A linear response is obtained in the range of ion activity 10^?5-10^?1 mol dm^?3 and the response slope is 45 mV per decade change of H₂PO₄^? ion activity; the selectivity coefficients are discussed.     

Effects of modulation defects on Hadamard transform time-of-flight mass spectrometry (HT-TOFMS)

In any Hadamard multiplexing technique, discrepancies between the intended and the applied encoding sequences may reduce the intensity of real spectral features and create discrete, artificial signals. In our implementation of Hadamard transform time-of-flight mass spectrometry (HT-TOFMS), the encoding sequence is applied to the ion beam by means of an interleaved comb of wires (Bradbury-Nielson gate), which shutters the ion beam on and off. By isolating and exaggerating individual skewing effects in simulating the HT-TOFMS process, we determined the nature of errors that arise from various defects. In particular, we find that the most damaging defects are: mismatched voltages between the wire sets and the acceleration voltage of the instrument, which cause positive and negative peaks throughout mass spectra; insufficient deflection voltage, which reduces the intensity of real peaks and causes negative peaks that are spread across the entire mass range; and voltage errors as the wire sets return from their deflection voltage to their transmission value, which yield significant reductions in peak intensities, create artificial peaks throughout mass spectra, and broaden real peaks by causing positive peaks to grow in the bins adjacent to them. Because the magnitude of the modulation defects grows as the applied modulation voltage is increased, Bradbury-Nielson gates with finer wire spacing, and hence stronger effective fields for a given applied voltage, were produced and installed. Operating at 10 to 15 V where errors in the electronics are essentially absent, the most finely spaced gate (100 microm) yielded signal-to-noise ratios that were more than two times higher than those achieved with more widely spaced gates. As an alternative method for minimizing skewing effects, HT-TOFMS data were post processed using an exact knowledge of the modulation defects. Nonbinary matrices that mimic the actual encoding process were built by measuring voltage versus time traces and then translating these traces to transmission versus time. Use of these matrices in the deconvolution step led to marked improvements in spectral resolution but require full knowledge of the encoding defects.