Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm

A DFB laser emitting at a wavelength around 940 nm in a single longitudinal mode up to an output power of 500 mW with a side mode suppression ratio greater than 50 dB is presented. More than 4 nm tuning range was reached by varying the current between 100 and 800 mA. Up to a power of about 300 mW, the lateral far field revealed stable fundamental mode operation.     

分布反馈激光器中剩余法布里-珀罗腔模对非简并四波混频特性的影响

基于四波混频(FWM)的全光波长转换技术是未来多波长通信系统的核心技术之一。除半导体光放大器(SOA)外,半导体激光器也是进行波长变换的器件。实验研究了小频率失谐到大频率失谐下分布反馈(DFB)激光器中剩余法布里珀罗腔模对非简并四波混频(NDFWM)的影响,并对其四波混频转换效率进行了分析。结果表明:当探测光波长与法布里珀罗腔的某一谐振波长一致时,分布反馈激光器中的四波混频转换效率将得到显著的增强;当频率失谐为太赫兹时,仍可得到较高的四波混频转换效率。     

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of −23°C. This laser worked in pulsed operation at 15°C.     

Corrugated neat thin-film conjugated polymer distributed-feedback lasers

Wave-guided thin-film distributed-feedback (DFB) polymer lasers are fabricated by spin coating a PPV-derived semiconducting polymer, thianthrene-DOO-PPV, onto oxidised silicon wafers with corrugated second-order periodic gratings. The gratings are written by reactive ion beam etching. Laser action is achieved by transverse pumping with picosecond laser pulses (wavelength 347.15 nm, duration 35 ps). The DFB-laser surface emission and edge emission are analysed. Outside the grating region the polymer film is used for comparative wave-guided travelling wave laser (amplified spontaneous emission (ASE)) studies. The pump pulse threshold energy density for wave-guided DFB-laser action (4–9 μJ cm^-2) is found to be approximately a factor of two lower than the threshold for wave-guided travelling wave laser action. The spectral width of the DFB laser (down to Δλ_DFB≈0.07 nm) is considerably narrower than that of the travelling wave laser (Δλ_TWL≈14 nm). The DFB-laser emission is highly linearly polarised transverse to the grating axis (TE mode). Only at high pump pulse energy densities does an additional weak TM mode build up. The surface-emitted DFB-laser radiation has a low divergence along the grating direction. For both the DFB lasers and the travelling wave lasers, gain saturation occurs at high excitation energy densities. Received: 7 January 2002 / Revised version: 15 February 2002 / Published online: 14 March 2002     

A long-pulse xenon ion laser as a pumping source for dye lasers

A simple xenon ion laser that is either sealed or has a gas flow mode is described. The laser delivered long pulses ( 15 μs) of almost 1 kW peak power. It has been used to pump a dye laser employing the same configuration as cw dye lasers. The system is inexpensive and can be mode-locked, enabling it to yield ultrashort pulses comparable in duration to those delivered by cw argon laser-pumped dye lasers but with much higher peak powers.     

激光烧蚀制备分布反馈式有机激光器件

采用激光烧蚀的方法结合激光全息技术,直接在高分子聚合物MEH-PPV薄膜表面烧蚀光栅结构,制备了分布反馈式有机激光器。这一方法具有工艺简单、光栅参数的可控性和重复性好等优点。器件MEH-PPV的膜厚是400 nm。利用波长为355 nm的Nd-YAG纳秒激光器进行单脉冲烧蚀,获得的光栅周期和光栅高度分别为370 nm和 100 nm。利用飞秒激光放大器作为泵浦源激射DFB激光器件,得到激射阈值约为182 μJ·cm^-2·pulse^-1,光谱的波峰约在609 nm处,半高宽为4.2 nm。通过改变两光束的夹角获得了周期为360, 370, 380, 390 nm的光栅,它们对应的激光波峰分别为602.91, 609.24, 613.26, 619.01 nm。     

CW,single-mode,tunable GaAs laser system with good frequency stability

A cryostat has been designed for the refrigeration of a semiconductor diode laser (presently GaAs), using a flow of helium gas with controlled temperature. The possibility of independent adjustment of the injection current and of the temperature of the GaAs laser support allows cw emission over a wide wavelength range (～100 Å for a given diode) while maintaining single-mode operation. A long-term frequency stability of ±30 MHz of the free-running single-mode laser has been obtained. By varying the dc injection current, it was possible to achieve linear scanning of the mode frequency, step by step or continuously, over at least 20 GHz without hopping. Possible applications in optical pumping and high-resolution spectroscopy are discussed.     

Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm

A distributed feedback (DFB) laser diode emitting at 785 nm was tested and applied as a light source for shifted excitation Raman difference spectroscopy (SERDS). Due to the physical properties of the laser diode, it was possible to shift the emission wavelength by 8 cm^-1 (0.5 nm) required for our SERDS measurements by simply changing the injection current. The internal grating ensured single mode operation at both wavelength with the frequency stability of ±0.06 cm^-1 (0.004 nm) required for high resolution Raman spectroscopic applications. The shifted spectra were used for calculating enhanced Raman spectra being obscured by a strong scattering background. A 16 dB (≈38 fold) improvement of the signal-to-background noise S̄/σ_B was demonstrated using blackboard chalk as a sample. The tunable DFB laser is a versatile excitation source for SERDS, which could be used in any dispersive Raman system to subtract fluorescence contributions and scattering background. PACS 82.80.Gk; 42.55.-f; 42.64.Fi     

Ti-sapphire femtosecond pulse pumped laser emission from all-plastic organic waveguide with distributed feedback resonator

We demonstrated the spectrally narrowed laser emission from all-plastic organic waveguide with the distributed feedback (DFB) resonator pumped by Ti-sapphire femtosecond laser. We fabricated the DFB resonator on a surface of a photoresist polymer using an interference of laser beams. All-plastic waveguide with organic dyes dispersed in poly(N-vinylcarbazole) and polystyrene matrix was spin-coated on a DFB resonator. Very narrow full width at half maximum (FWHM) of 0.15 nm in emission wavelength was observed, whereas an excitation laser of Ti-sapphire femtosecond laser has broad FWHM of 14 nm.     

Ⅲ–Ⅴ/Si Hybrid Laser Array with DBR on Si Waveguide

We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique.The laser array is realized by evanescentl.y coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings.The lasers have emission peak wavelengths in a range of 1537-1543 nm with a wavelength spacing of about 1.0 nm.The thermal impedances Z_T of these hybrid lasers are evidently lower than those DFB counterparts     

分布式反馈激光器模拟控温检测系统研制

温度对分布式反馈(DFB)激光器的性能指标和工作寿命有着重要影响。针对宽温度范围下的激光器应用,分析了激光器温控系统的研究现状及趋势,给出了温控系统的设计原理,采用线性驱动与PID闭环控制方法,应用模拟器件,研制了一种DFB激光器的模拟控温检测系统,并利用该系统对1550 nm的DFB激光器进行了试验验证。结果表明,系统在?55 ℃～70 ℃的全温度范围下,保持长时间工作（≥2 h）,激光器的工作状态稳定,中心波长未出现漂移。系统的温度控制精度随着工作环境温度的范围不同而有所差异,在室温环境下可达到±0.02 ℃,在全温范围内控制精度在±0.8 ℃以内,跟踪误差小于±0.5 dB。与传统的激光器温控系统相比,本系统工作温度范围宽、控制精度高,且体积小、成本低、简单可靠,对于温度环境要求较为严苛的DFB激光器应用场景,具有重要的工程实践意义。     

GaInAsP/InP double-heterostructure lasers for fiber odtic communications

Abstract

This paper reviews the performance of GaInAsP/InP double-heterostructure diode lasers prepared by liquid-phase epitaxy. These lasers have the advantage that exact lattice-matching between the GaIn-ASP active region and the InP substrate is possible for quaternary alloy compositions giving emission wavelengths over a range that includes 1.1–1.3 μm, the optimum region for optical communication systems utilizing fused silica fibers. Continuous operation at room temperature has been achieved in this region for proton-defined stripe (PDS), oxide-defined stripe (ODs), and junction-defined, buried-stripe (JDBS) lasers. The first three PDS devices to be life-tested have already logged over 6,000, 5,700, and 4,000 h, respectively, of cw operation at room temperature without any degradation.     

Stable single frequency and single polarization DFB fiber lasers operated at 1053 nm

Stable single-frequency and single-polarization distributed-feedback (DFB) fiber laser was realized by giving a pressure on the phase shift region of the fiber grating. The output wavelength of the DFB fiber laser is 1053 nm. When the pump power of 980 nm laser diode is 100 and 254 mW, the output power can reach 8.3 and 37.1 mW and the polarization extinction ratio was 26 and 20 dB, respectively. After chopped by Acousto-optic modulator (0.3 Hz), the pulse peak value variance is 4.65%(peak to peak) and 1.098% (RMS) for 31 min.     

Single‐mode distributed feedback laser operation with no dependence on the morphology of the gain medium

Organic distributed feedback (DFB) lasers can be useful photonic tools for biological applications where the roles of organic materials are important, because highly coherent single mode emission with broad tuning range can be obtained. However, the formulaic structures of organic lasers, and the uses of gain media as resonators themselves, are not suitable for inducing laser emission from irregular shaped gain media, such as dye‐staining cells and tissues. Here, we report a reusable photonic template comprising an exceedingly thin and discrete titanium dioxide (TiO₂) layer on a one‐dimensional (1D) quartz grating to induce single mode DFB lasing from a variety of states of optical gain media. Using the same template, the external gain media of optically thick and thin casted film, liquid, and a free‐standing thick film reveal single mode lasing with reliable performance. Numerical simulations demonstrate that the 25‐nm thick TiO₂ disconnected grating lines support a spatially confined DFB mode in the vertical direction, even under no index difference between superstrate and substrate. Additionally, not using the typical waveguide gain layer promises high sensitivity and detection limit in refractometric sensing. These results suggest that the photonic structure may serve as a versatile sensing platform for bioapplications.     

A small scale, supersonic chemical oxygen-iodine laser

A supersonic chemical oxygen-iodine laser of 5 cm long active medium has been operated utilizing a simple sparger-type O₂(¹Δ) chemical generator and a medium size pumping system. A grid nozzle was used for iodine injection and supersonic expansion. 9 W of cw laser emission at 1315 nm were obtained in the present experiments. The small size and the simple structure of the laser system and its stable operation for long periods make it a convenient tool for studying parameters important for high-power supersonic iodine lasers.     

Experimental determination of cw dye laser parameters by loss variation

The behavior of a cw dye laser under variation of the output coupling has been investigated. By studying the dependence of laser threshold, output power and slope efficiency on the degree of outcoupling, numerical values for macroscopic and microscopic laser parameters have been obtained. The macroscopic data comprise values for internal cavity losses and mode matching conditions, the microscopic data refer to molecular parameters of the dye used, such as cross-sections for stimulated emission and triplet-triplet absorption.     

Optically pumped lead chalcogenide infrared emitters on silicon substrates

Two low cost-infrared sources emitting above 4 μm wavelength are described: (i) Double heterostructure or quantum well EuSe/PbSe/Pb_1−xEu_xSe edge emitting lasers on silicon substrates show peak powers up to 200 mW and differential quantum efficiencies up to 20%. They operate up to 250 K when pumped with 870 nm laser diodes (with peak powers of 5.5 W). (ii) A “wavelength transformer”, a EuSe/PbSe/Pb_1−xEu_xSe active resonant cavity with epitaxial bottom and top mirror on a Si(1 1 1) substrate transforms the incoming 870 nm pump radiation into e.g. 4.2 μm wavelength. The device operates at room temperature, and the width and value of the emission wavelength can be tuned by design.     

利用倾斜光纤光栅的可开关双波长光纤激光器

报导了一种在四波混频作用下利用倾斜光纤布拉格光栅进行波长选择的可开关双波长掺铒光纤激光器。通过将倾斜光纤光栅与单模光纤进行横向错位焊接,使光栅的反向LP01和LP11两个模式具有相近的有效反射率,从而可以用来进行激光器的双波长选择。接入腔内的一段高非线性光子晶体光纤引入的四波混频效应克服了模式竞争,使得双波长激光在室温下稳定振荡。腔内起偏器和偏振控制器的联合作用可产生依赖于波长的损耗,以补偿光纤光栅两反射峰峰值的大小差异。基于以上原理,通过调节腔内的偏振态,该激光器实现了室温下稳定的双波长输出,也实现了在两波长之间的转换。两波长激光均有超过45 dB的信噪比,最大的功率波动为0.8 dB     

Highly efficient infrared-to-visible energy upconversion in Er(3+):Y(2)O(3)

Very intense green and red emission was observed at room temperature from the (4)S(3/2) and (4)F(9/2) levels of Er(3+):Y(2)O(3). A cw diode laser at 975 nm was used as a pump for resonant sequential excitation of the (4)I(11/2) and (4)F(7/2) levels. The fluorescence was easily visible to the naked eye, even with 27 mW of excitation power. It was found that at 850 mW of cw excitation power the total luminance was 39,000 cd/m(2). This corresponds to ~100 muW of green emission and 270 muW of red emission.     

Diode-pumped Nd:LGS/LBO laser at 452 nm

We report a blue laser at 452 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 904 nm Nd:LGS laser under 808 nm diode pumping. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation (SHG) of the laser. At an incident pump power of 17.8 W, as high as 1.14 W of cw output power at 452 nm is achieved. The optical-to-optical conversion efficiency is up to 6.4%, and the fluctuation of the blue output power was better than 4.1% in the given 30 min.