A new method for estimating the critical current density of a superconductor from its hysteresis loop

The critical current density J_c of some of the superconducting samples, calculated on the basis of the Bean’s model, shows negative curvature for low magnetic field with a downward bending near H = 0. To avoid this problem Kim’s expression of the critical current density, J_c = k/(H₀ + H), where J_c has positive curvature for all H, has been employed by connecting the positive constants k and H₀ with the features of the hysteresis loop of a superconductor. A relation between the full penetration field H_p and the magnetic field H_min, at which the magnetization is minimum, is obtained from the Kim’s theory. Taking the value of J_c at H = H_p according to the actual loop width, as in the Bean’s theory, and at H = 0 according to an enhanced loop width due to the local internal field, values of k and H₀ are obtained in terms of the magnetization values M⁺(?H_min), M^?(H_min), M⁺(H_p) and M^?(H_p). The resulting method of estimating J_c from the hysteresis loop turns out to be as simple as the Bean’s method.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Large transport critical currents of powder-in-tube Sr0.6K0.4Fe2As2/Ag superconducting wires and tapes

We report the achievement of transport critical currents in Sr_0.6K_0.4Fe₂As₂ wires and tapes with a T_c = 34 K. The wires and tapes were fabricated through an in situ powder-in-tube process. Silver was used as a chemical addition as well as a sheath material. All the wire and tape samples have shown the ability to transport superconducting current. Critical current density J_c was enhanced upon silver addition, and at 4.2 K, a largest J_c of ～1200 A/cm² (I_c = 9 A) was achieved for 20% silver added tapes, which is the highest in iron-based wires and tapes so far. The J_c is almost field independent between 1 T and 10 T, exhibiting a strong vortex pinning. Such a high transport critical current density is attributed to the weak reaction between the silver sheath and the superconducting core, as well as an improved connectivity between grains. We also identify a weak-link behavior from the apparent drop of J_c at low fields and a hysteretic phenomenon. Finally, we found that compared to Fe, Ta and Nb tubes, Ag was the best sheath material for the fabrication of high-performance 122 type pnictide wires and tapes.     

Pinning,thermally activated depinning and their importance for tuning the nanoprecipitate size and density in high Jc YBa2Cu3O7−x films

YBa₂Cu₃O_7?x (Y123) films with quantitatively controlled artificial nanoprecipitate pinning centers were grown by pulsed laser deposition (PLD) and characterized by transport over wide temperature (T) and magnetic field (H) ranges and by transmission electron microscopy (TEM). The critical current density J_c was found to be determined by the interplay of strong vortex pinning and thermally activated depinning (TAD), which together produced a non-monotonic dependence of J_c on c-axis pin spacing d_c. At low T and H, J_c increased with decreasing d_c, reaching the very high J_c ～ 48 MA/cm² ～20% of the depairing current density J_d at 10 K, self-field and d_c ～ 10 nm, but at higher T and H when TAD effects become significant, J_c was optimized at larger d_c because longer vortex segments confined between nanoprecipitates are less prone to thermal fluctuations. We conclude that precipitates should extend at least several coherence lengths along vortices in order to produce irreversibility fields H_irr(77 K) greater than 7 T and maximum bulk pinning forces F_p,max(77 K) greater than 7–8 GN/m³ (values appropriate for H parallel to the c-axis). Our results show that there is no universal pin array that optimizes J_c at all T and H.     

Effect of W-addition on pinning property of MgB2

The 5d transition metal W was added into the MgB₂ superconductor. The Mg, B and W were sintered at 1173 K for 30 min under H₂/Ar atmosphere in the electric furnace. The W_x(MgB₂)_1?x samples were prepared in the W concentration range of 0 ? x ? 0.05. Temperature and field dependences of magnetization were measured by the SQUID magneto-meter. The field and x dependences of J_c at 20 K were analyzed by the extended critical state model. The enhancement of J_c became maximum for the x = 0.02 sample.     

Effects of nanoscale defects on critical current density of (Y1−xEux)Ba2Cu3O7−δ thin films

In pulsed laser deposition of YBa₂Cu₃O_7?δ films, defect introduction into the films tends to anisotropically improve the pinning along the H||c direction due to the columnar growth mode of the process. In Eu-substituted samples, however, even though an increase in critical current density (J_c) in the H||c direction was observed for low fields (H = 0.2 T), the improvement was more notable for the H||ab-plane at both low and higher fields. Herein we present detailed TEM microstructural studies to understand these new trends in J_c(H), which are markedly different than flux pinning increases achieved with other methods, for example, with nanoparticle additions. Threading dislocations, observed in the Eu-substituted samples along the c-axis, account for J_c enhancement with H||c at low field. The enhanced ab-planar pinning in the Eu-substituted samples is attributed to the extensive bending of the {0 0 1} lattice planes throughout the film, and the crystal lattice defects with excess Cu–O planes, that were effective in increasing the J_c for H||ab at both low and high fields.     

Influence of Zr and Ce doping on electromagnetic properties of (Gd,Y)–Ba–Cu–O superconducting tapes fabricated by metal organic chemical vapor deposition

(Gd,Y)Ba₂Cu₃O_x tapes have been fabricated by metal organic chemical vapor deposition (MOCVD) with Zr-doping levels of 0–15 mol.% and Ce doping levels of 0–10 mol.% in 0.4 μm thick films. The critical current density (J_c) of Zr-doped samples at 77 K, 1 T applied in the orientation of H 6 c is found to increase with Zr content and shows a maximum at 7.5% Zr doping. The 7.5% Zr-doped sample exhibits a critical current density (J_c) of 0.95 MA/cm² at H 6 c which is more than 70% higher than the J_c of the undoped sample. The peak in J_c at H 6 c is 83% of that at H 6 a–b in the 7.5% Zr-doped sample which is more than twice as that in the undoped sample. Superconducting transition temperature (T_c) values as high as about 89 K have been achieved in samples even with 15% Zr and 10% Ce. Ce-doped samples with and without Ba compensation are found to exhibit substantially different J_c values as well as angular dependence characteristics.     

Submillimeter-wave measurements of N2 and O2 pressure broadening for HO2 radical generated by Hg-photosensitized reaction

The N₂ and O₂ pressure broadening coefficients of the pure rotational transitions at 625.66 GHz (N_KaKc=10_1?9–10_0?10, J=10.5–10.5) and 649.70 GHz (N_KaKc=10_2?9–9_2?8, J=9.5–8.5) in the vibronic ground state X²A′ of the perhydroxyl (HO₂) radical have been determined by precise laboratory measurements. For the production of HO₂, the mercury-photosensitized reaction of the H₂ and O₂ precursors was used to provide an optimum condition for measurement of the pressure broadening coefficient. The Superconducting Submillimeter-wave Limb Emission Sounder (SMILES) was designed to monitor the volume mixing ratio of trace gases including HO₂ in the Earth's upper atmosphere using these transitions. The precise measurement of pressure broadening coefficient γ in terms of the half width at half maximum is required in order to retrieve the atmospheric volume mixing ratio. In this work, γ coefficients of the 625.66 GHz transition were determined for N₂ and O₂ at room temperature as γ(N₂)=4.085±0.049 MHz/Torr and γ(O₂)=2.578±0.047 MHz/Torr with 3σ uncertainty. Similarly, the coefficients of the 649.70 GHz transition were determined as γ(N₂)=3.489±0.094 MHz/Torr and γ(O₂)=2.615±0.099 MHz/Torr. The air broadening coefficients for the 625.66 GHz and 649.70 GHz lines were estimated at γ(air)=3.769±0.067 MHz and 3.298±0.099 MHz respectively, where the uncertainty includes possible systematic errors. The newly determined coefficients are compared with previous results and we discuss the advantage of the mercury-photosensitized reaction for HO₂ generation. In comparison with those of other singlet molecules, the pressure broadening coefficients of the HO₂ radical are not much affected by the existence of an unpaired electron.     

Effects on Jc of pinning center morphology for multiple-in-line-damage in coated conductor and bulk,melt-textured HTS

The properties of discontinuous aligned pinning centers (PCs) created by high-energy heavy-ions are compared for bulk melt-textured and coated conductor HTS. Properties of PCs, which increase J_c (pinning potential and entanglement), and negative properties which decrease J_c (e.g., decreased T_c and percolation paths) are evaluated. Mechanisms are proposed to explain the very large increases in J_c resulting from multiple-in-line-damage (MILD) compared to continuous columnar pinning centers (CCPC). In particular, a mechanism which results in fluxoid entanglement, even for parallel (unsplayed) PCs, is discussed. The same mechanism is found to also account for restoration of much of the pinning potential expected to be lost due to the gaps in MILD PCs. It also accounts for the fact that at high fluence, J_c increases as fluence is increased, instead of decreasing as expected. The very low self-field in coated conductor permits separation of the negative and positive effects of PCs. It is found that parameters developed to quantify the negative effects in bulk melt-textured YBCO, by 63 GeV U²³⁸ ions, successfully describe damage to 2.1 μm thick coated conductor by 1 GeV Ru⁴⁴ ions. Coated conductor at 77 K and self-field is generally known to have J_c about 100 times that of melt-textured YBCO. However, at 77 K and applied field of 1 T, when both forms of HTS are processed with comparable numbers of near-optimum MILD PCs, the difference in J_c is reduced to a factor of 1.3–2. Whereas J_c for melt-textured YBCO increased sharply, by a factor of up to 16.8 for high-fluence MILD PCs, J_c in coated conductor increased by a smaller factor of 2.5–3.0. Nevertheless, 2.1 μm thick coated conductor, with near-optimum MILD PCs, exhibits J_c = 543 kA/cm² at 77 K and applied field of 1.0 T, and I_c = 114 A/cm-width of conductor. This is the highest value we find in the literature. The phenomenology developed indicates that for optimum MILD PCs in coated conductor, J_c ～ 700 ± 70 kA/cm² should be achievable at 77 K, 1.0 T.     

Effect of processing temperature on the superconducting properties of acetone doped MgB2 tapes

Correlation of phase formation, critical transition temperature T_c, microstructure, and critical current density J_c with sintering temperature has been studied for acetone doped MgB₂/Fe tapes. Sintering was performed at 600–850 °C for 1 h in a flowing Ar atmosphere. High boron substitution by carbon was obtained with increasing the sintering temperature; however, the acetone doped samples synthesized at 800 °C contain large size MgB₂ grains and more MgO impurities. Incomplete reaction for the acetone doped samples heated at 600 °C result in bad intergrain connectivity. At 4.2 K, the best J_c value was achieved in the acetone doped sample sintered at 700 °C, which reached 24,000 A/cm² at 10 T and 10,000 A/cm² at 12 T, respectively. Our results indicate that the small grain size and less impurity were also important for the improvement of J_c–B properties besides the substitutions of B by C.     

Increase of critical current density with doping carbon nano-tubes in YBa2Cu3O7−δ

The effects of carbon nano-tubes (CNTs) on the crystal structure and superconducting properties of YBa₂Cu₃O_7?δ (Y-123) compound were studied. Samples were synthesized using standard solid-state reaction technique by adding CNT up to 1 wt% and X-ray diffraction data confirm the single phase orthorhombic structure for all the samples. Current–voltage measurements in magnetic fields up to 9 T were used to study the pinning energy U_J and critical current density J_c as a function of magnetic field at fixed temperature. We find that while T_c does not change much with the CNT doping (91–92 K), both U_J and J_c increase systematically up to 0.7 wt% CNT doping in a broad magnetic field ranges between 0.1 and 9 T and J_c in the 0.7 wt% CNT doped sample is at least 10 times larger than that of the pure Y-123. The scanning electron microscope image shows that CNTs are forming an electrical-network between grains. These observations suggest that the CNT addition to the Y-123-compounds improve the electrical connection between superconducting grains to result in the J_c increase.     

Aqueous polymer–nitrate solution deposition of YBCO films

High critical current density YBa₂Cu₃O_7?x (YBCO) films were prepared by solution deposition of aqueous non-fluorine precursors. Non-fluorine polymer-assisted deposition (PAD) processes utilizing rheology modifiers and chelating agents were used to produce 50 nm films with a critical current density (J_c) over 3 MA/cm² and 400 nm films with J_c > 1 MA/cm²_. T_c measurements indicated that films have T_c values near 90 K. The total heat treatment time to produce these high performance films was less than 4 h. Rheology modifiers such as polyvinyl alcohol (PVA) and hydroxyethyl cellulose (HEC) were used to increase the thickness of deposited films independent of the solution cation concentration. Chelating agents such as polyethylene glycol (PEG) and sucrose increased the barium ion solubility. Nitrate crystallization during deposition was controlled through rapid drying with vacuum and coating with hot solutions.     

Effects of doping with nanoscale Co3O4 particles on the superconducting properties of powder-in-tube processed MgB2 tapes

Nanoscale Co₃O₄ particles were doped into MgB₂ tapes with the aim of developing superconducting wires with high-current-carrying capacity. Fe-sheathed MgB₂ tapes with a mono-core were prepared using the in situ powder-in-tube (PIT) process with the addition of 0.2–1.0 mol% Co₃O₄. The critical temperature decreased monotonically with an increasing amount of doped Co₃O₄ particles for all heat-treatment temperatures from 600 to 900 °C. However, the transport critical current density (J_c) at 4.2 K varied with the heat-treatment temperatures. The J_c values in magnetic fields ranging from 7 to 12 T decreased monotonically with increasing Co₃O₄ doping level for a heat-treatment temperature of 600 °C. In contrast, some improvements on the J_c values of the Co₃O₄ doped tapes were observed in the magnetic fields below 10 T for 700 and 800 °C. Furthermore, J_c values in all the fields measured increased as the Co₃O₄ doping level increase from 0 to 1 mol% for 900 °C. This heat-treatment temperature dependence of the J_c values could be explained in terms of the heat-treatment temperature dependence of the irreversibility field with Co₃O₄ doping.     

Strongly enhanced flux pining of GdBCO coated conductors with BaSnO3 nanorods by pulsed laser deposition

We report the effects of BSO addition on the crystallinity, texture, and the field dependency of critical current density (J_c) of GdBCO coated conductors (CCs) prepared by pulsed laser deposition (PLD). Undoped and BSO-doped GdBCO films showed only c-axis oriented growth, and the incorporated BSO nanorods exhibited epitaxial relationship with the GdBCO matrix. In comparison with undoped film, BSO-doped GdBCO film exhibited greatly enhanced J_c and higher pinning force densities in the entire field region of 0–5 T (H//c) at 77 and 65 K. The BSO-doped GdBCO film showed the maximum pinning force densities (F_p) of 6.5 GN/m³ (77 K, H//c) and 32.5 GN/m³ (65 K, H//c), ～2.8 times higher than those of the undoped sample. Cross-sectional TEM analyses exhibited nano-structured BSO nanorods roughly aligned along the c-axis of the GdBCO film, which are believed effective flux pinning centers responsible for strongly improved critical current densities in magnetic fields.     

Intrinsic tunneling spectroscopy for Bi2−xPbxSr2CaCu2O8+δ of nm-thickness mesa structure

We have investigated intrinsic tunneling spectroscopy (ITS) with short-pulse bias to mesa structures consisting of several layers of intrinsic Josephson junction superlattices of Bi_1.8Pb_0.2Sr₂CaCu₂O_8+δ(PbBi2212). Through ITS, the superconducting gap 2Δ = 75 meV (at 10 K) is obtained for a PbBi2212 crystal. The large 2Δ value corresponds to the underdoped property of Pb-free Bi2212, which is consistent with the ab-plane transport measurement results performed simultaneously. The normal tunneling resistance R_N derived from the high bias region of the I–V characteristics is significantly small in comparison with underdoped Bi2212. Moreover, J_c of PbBi2212 is less deviated from the Ambegaokar–Baratoff value than the case of underdoped Bi2212. It is interpreted that the Pb substitution makes the tunnel barrier lower, resulting in a reduced anisotropy and a high J_c even with a lower doping.     

Growth of Cu0.5Tl0.5Ba2Ca3Cu4−yZnyO12−δ superconductor with optimum carriers

We have tried to vary the carriers concentration in Cu_0.5Tl_0.5Ba₂Ca₃Cu_4?yZn_yO_12?δ (y = 0, 1, 1.5, 2, 2.5) superconductor with the help of post-annealing experiments carried out in nitrogen, oxygen and air and to investigate its effects on the superconductivity parameters. The zero resistivity critical temperature [T_c(R = 0)], the magnitude of diamagnetism and critical current [I_c(H = 0)] are found to increase in Zn free samples after post-annealing in oxygen and air, while these superconducting properties have been suppressed after post-annealing in nitrogen at 550 °C for 6 h. The post-annealing of Zn-doped samples in air has marginally increased the superconducting properties, while these properties have been suppressed after post-annealing in nitrogen and oxygen. These studies have led us to the definite conclusion that the Zn-doped material has grown with optimum carriers concentration.     

Effect of Ge4+ and Mg2+ doping on superconductivity,fluctuation induced conductivity and interplanar coupling of TlSr2CaCu2O7−δ superconductors

Substitution of Ge⁴⁺ in place of Cu in Tl_0.85Cr_0.15Sr₂CaCu_2?xGe_xO_7?δ (x = 0–0.6) showed initial increase in zero critical temperature value, T_{c zero} from 98 K (x = 0) to 100 K (x = 0.1) and in the range of 85–86 K for x = 0.2–0.3. The slow decrease in T_{c zero} is unexpected as tetravalent Ge⁴⁺ substitution is expected to strongly reduce hole concentration in the samples and suppress T_{c zero}. Excess conductivity analyses of resistance versus temperature data based on Asmalazov–Larkin (AL) theory revealed that the substitution induced 2D-to-3D transition of fluctuation induced conductivity with the highest transition temperature, T_2D–3D observed at x = 0.1. FTIR spectroscopy analysis indicates Ge⁴⁺ substitution cause reduction in CuO₂/GeO₂ interplanar distance while our calculation based on Lawrence–Doniach model revealed highest superconducting coherence length, ξ_c(0) and interplanar coupling, J at x = 0.3. On the other hand, substitution of divalent Mg²⁺ for Ca²⁺ in (Tl_0.5Pb_0.5)(Sr_1.8Yb_0.2)(Ca_1?yMg_y)Cu₂O₇ (y = 0–1.0), which is not expected to directly vary hole concentration, surprisingly caused T_{c zero} to increase from 89.6 K (y = 0) to an optimum value of 95.9 K (y = 0.6) before decreasing with further increase in y. Excess conductivity analyses showed 2D-to-3D transition of fluctuation induced conductivity for all samples where the highest T_2D–3D was at y = 0.4. Similar calculation revealed highest values of ξ_c(0) and J also at y = 0.4. FTIR analysis of the samples indicates inequivalent Cu(1)O(2)Pb/Tl lengths and possible tilting of CuO₂ plane as a result of Mg²⁺ substitution. The increased ξ_c(0) and J as a result of the Ge⁴⁺ and Mg²⁺ substitutions are suggested to contributed to sustenance of superconductivity above 80 K in the samples.     

Vortex pinning in bulk-processed Y–Ba–Cu–O with ZrO2 nano-particles: Optimum pinning center size

Crystalline defects on the nano-scale were successfully introduced into YBCO high-temperature superconductors (HTS) by ZrO₂ nanometer particles addition in order to strongly pin the quantized vortices. Three batches of ZrO₂ nano-particles with different particle size distributions were used. The corresponding mean nano-particle diameters are respectively, 287, 536 and 764 nm. Serving as artificial pinning centers (APC), non-superconducting nano-particles cause a remarkable enhancement of critical current density (J_c) at T = 77 K. This improvement has been shown to depend on the size of APC. The pinning strength of nano-particles inclusions has been found to be greater with wide size dispersed nano-particles. Our results indicate that pinning properties and vortex dynamics depend on the size of APCs. The introduction of APCs with controlled size is indispensable to achieve a high J_c.     

Stable barium compounds in YBa2Cu3Oy superconductors

The stability of various amounts of Ba₃Cu₃In₄O₁₂ (334) or BaTbO₃ (BTO) in a sintered YBa₂Cu₃O_y (YBCO) matrix was examined. Samples with added 334 or BTO exhibited critical temperatures (T_c) above 90 K for up to 20 vol.% addition and improved critical current densities (J_c) under a magnetic field. X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX) analysis indicated that 334 and BTO did not react with the YBCO matrix under the sintering conditions used. The normalized J_c under a magnetic field of 1 T reached a maximum at 14 vol.% of 334 addition and 20 vol.% BTO addition. YBCO thin films with added BTO showed a gradual decrease in the T_c with increasing BTO content. YBCO films with added 334 showed a constant T_c of 87 K up to a 334 content of 4 vol.%.     

Thickness dependence of Ic and Jc of LTG-SmBCO coated-conductor on IBAD-MgO tapes

We have reported SmBa₂Cu₃O_y (SmBCO) films on single crystalline substrates prepared by low-temperature growth (LTG) technique. The LTG-SmBCO films showed high critical current densities in magnetic fields compared with conventional SmBCO films prepared by pulsed laser deposition (PLD) method. In this study, to enhance critical current (I_c) in magnetic field, we fabricated thick LTG-SmBCO films on metal substrates with ion-beam assisted deposition (IBAD)-MgO buffer and estimated the I_c and J_c in magnetic fields.All the SmBCO films showed c-axis orientation and cube-on-cube in-plane texture. T_c of the LTG-SmBCO films were 93.1–93.4 K. J_c and I_c of a 0.5 μm-thick SmBCO film were 3.0 MA/cm² and 150 A/cm-width at 77 K in self-field, respectively. Those of a 2.0 μm-thick film were 1.6 MA/cm² and 284 A/cm-width respectively. Although I_c increased with the film thickness increasing up to 2 μm, the I_c tended to be saturated in 300 A/cm-width. From a cross sectional TEM image of the SmBCO film, we recognized a-axis oriented grains and 45° grains and Cu–O precipitates. Because these undesired grains form dead layers, I_c saturated above a certain thickness. We achieved that I_c in magnetic fields of the LTG-SmBCO films with a thickness of 2.0 μm were 88 A/cm-width at 1 T and 28 A/cm-width at 3 T.