Mn掺杂SnO_2一维纳米结构的制备、形貌及光学性质

用化学气相沉积(CVD)法制备了Mn掺杂的SnO2一维纳米结构(纳米线及纳米带),X射线衍射(XRD)显示样品为金红石型SnO2晶体,其生长机理可分别归结为气-液-固(VLS)和气-固(VS)机理,生长温度和气态原料浓度的差别是造成样品形貌及生长机理不同的主要原因.样品的拉曼谱出现了500、543、694和720cm-1四个新拉曼谱峰,分别是由活性的红外模和表面模引起的.纳米线及纳米带发光峰位于520nm处,发光强度随样品中氧空位的增减出现由强到弱的变化.     

氧化铟八面体、纳米带、锯齿状纳米线和纳米链的可控合成

在N₂/H₂O混合气流中将硅片上金覆盖的金属铟颗粒加热到800 ℃制备出了不同形貌的In₂O₃纳米结构, 在距铟源不同距离处依次得到In₂O₃的八面体、纳米带、锯齿状纳米线和纳米链. 采用拉曼光谱、扫描电镜、X射线衍射和透射电镜对产物进行了表征分析. 结果表明, 八面体、纳米带、锯齿状纳米线和纳米链均为立方相单晶结构的In₂O₃. 基于气-固和气-液-固生长机理详细分析了八面体、纳米带、锯齿状纳米线和纳米链的生长过程, 提出了不同形貌In₂O₃纳米结构的生长模式.     

Surface-enhanced Raman scattering and polarized photoluminescence from catalytically grown CdSe nanobelts and sheets

We have successfully fabricated single-crystalline CdSe nanowires, nanobelts, and sheets by a chemical vapor deposition (CVD) method assisted with laser ablation. The synthesized CdSe nanostructures have hexagonal wurtzite phase as characterized by X-ray diffraction (XRD). CdSe nanobelts can range in length from several tens to a hundred micrometers, in thickness from 40 to 70 nm, and a tapered width which is approximately 3 microm at one end and tapers off to approximately 100 nm at a catalytic gold particle. Both selected area electron diffraction (SAED) and high-resolution transmission electron microscopic (HRTEM) measurements show that the single-crystalline hexagonal belts and sheets grew along the [0.1-1.0] direction with side surface of +/-(0 0 0 1) and top surface of +/-(2 -1 -1 0). While the growth mechanism of nanobelts complies with a combination of vapor-liquid-solid (VLS) and vapor-solid (VS) processes, the formation of sheets is primarily based on the VS mechanism. For comparison, the phonon modes of CdSe nanobelts and bulk powder have been measured by surface-enhanced Raman scattering (SERS) and normal Raman scattering (NRS) spectroscopies with off- and near-resonant excitations. A blue-shift of 2.4 cm(-1) for the longitudinal optical (LO) phonon of CdSe nanobelts, relative to bulk CdSe, is attributed to a lattice contraction in the belt structure, which is confirmed by the XRD measurement. Room-temperature microphotoluminescence (PL) at approximately 1.74 eV from single CdSe nanobelts shows a 3-fold enhancement compared to that from bulk CdSe powder and displays a partial polarization dependence of emission angles.     

One-step growth of Si3N4 stem-branch featured nanostructures: Morphology control by VS and VLS mode

We report here one-step synthesis of Si₃N₄ nanodendrites by selectively applying a vapor-solid (VS) and vapor-liquid-solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400-750 nm, suggesting their potential applications in light and electron emission devices.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Preparation and electrical properties of ultrafine Ga2O3 nanowires

Uniform and well-crystallized beta-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor-liquid-solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Omega.m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.     

Synthesis of InP nanotubes

Indium phosphide (InP) nanotubes have been synthesized via the vapor-liquid-solid (VLS) growth mechanism. The nanotubes are crystalline and have the (bulk) zinc blende structure and therefore represent a new class of tube materials. The tubes show photoluminescence, which is considerably blue-shifted with respect to bulk emission, indicating that the optical properties are not dominated by defect states. They are formed at higher temperatures than those at which nanowires are fabricated. A simple model for the formation of the nanotubes is presented. The wall thickness can be controlled by the synthesis temperature and is in the range of 2-20 nm.     

Catalyst-assisted vapor-liquid-solid growth of single-crystal Ga2O3 nanobelts

Mass production of quasi-one-dimensional gallium oxide nanobelts is accomplished through graphite-thermal reduction of a mixture of gallium oxide powders and SnO2 nanopowders under controlled experimental conditions. Sn nanoparticles are located at or close to the tips of the nanobelts and served as the catalyst for the nanobelt growth by a vapor-liquid-solid mechanism. The morphology and microstructure of the nanobelts were characterized by scanning electron microscopy and high-resolution transmission electron microscopy. The Ga2O3 nanobelts grow along the [104] direction, the widths ranged from several tens to several hundreds of nanometers, and the lengths ranged from several tens to several hundreds of micrometers. The growth of Ga2O3 nanobelts is initiated by Sn nanoparticles via a catalyst-assisted vapor-liquid-solid process, which makes it possible to control the sizes of Ga2O3 nanobelts.     

Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

Tetraethylenepentamine-directed controllable synthesis of wurtzite ZnSe nanostructures with tunable morphology

A novel tetraethylenepentamine (TEPA)-directed method has been successfully developed for the controlled synthesis of ZnSe particles with distinctive morphologies, including nanobelts, nanowires, and hierarchically solid/hollow spheres. These structures, self-assembled from nanobelts and nanorods, have been synthesized by adjusting the reaction parameters, such as the solvent composition, reaction temperature, and the aging time. Results reveal that the volume ratio of H2O and TEPA plays a crucial role in the final morphology of ZnSe products. The mechanisms of phase formation and morphology control of ZnSe particles are proposed and discussed in detail. The products have been characterized by means of X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy (TEM), selected area electron diffraction, high-resolution TEM, Raman spectra and luminescence spectroscopy. The as-prepared ZnSe nanoparticles display shape- and size-dependent photoluminescent optical properties. This is the first time to report preparation of complex hollow structures of ZnSe crystals with hierarchy through a simple solution-based route. This synthetic route is designed to exploit a new H2O/TEPA/N2H4H2O system possibly for the preparation of other semiconductor nanomaterials.     

Self-catalytic solution for single-crystal nanowire and nanotube growth

Vast majority of nanowires is grown by the chemical vapor deposition (CVD), molecular beam epitaxy (MBE), metal-organic CVD (MOCVD), or the laser ablation method via the vapor-liquid-solid (VLS) route. Others are grown via the oxide-assisted route. In this investigation a self-catalytic synthesis route based on VLS formalism and suitable for the CVD, MBE, MOCVD, or the laser ablation method has been described. Various issues pertaining to growth kinetics, nanowire alignment, diameter distribution, and nanotube formation have been addressed. The strength of the self-catalytic route has been highlighted. As this route does not make use of foreign element catalytic agents to mediate the synthesis, it suffers from difficulties. Attempts have been made to elucidate means to overcome these difficulties. Attempts have also been made to explain the means to separate the nanowires thus produced from the substrate/scaffold, and to control their physicochemical characteristics.     

Catalyst-nanostructure interfacial lattice mismatch in determining the shape of VLS grown nanowires and nanobelts: a case of Sn/ZnO

Vapor-liquid-solid (VLS) is a well-established process in catalyst-guided growth of nanowires. The catalyst particle is generally believed to be in liquid state during growth, and it is the site for adsorbing incoming molecules; the crystalline structure of the catalyst may not have any influence on the structure of the grown one-dimensional nanostructures. In this paper, using tin particle guided growth of ZnO nanostructures as a model system, we show that the interfacial region of the tin particle with the ZnO nanowire/nanobelt could be ordered (or partially crystalline) during the VLS growth, although the local growth temperature is much higher than the melting point of tin, and the crystallographic lattice structure at the interface is important in defining the structural characteristics of the grown nanowires and nanobelts. The interface prefers to take the least lattice mismatch; thus, the crystalline orientation of the tin particle may determine the growth direction and the side surfaces of the nanowires and nanobelts. This result may have important impact on the understanding of the physical chemical process in the VLS growth.     

Growth of SnO nanobelts and dendrites by a self-catalytic VLS process

This article reports on the growth of SnO nanobelts and dendrites by a carbothermal reduction process. The materials were synthesized in a sealed tube furnace at 1210 degrees C and at 1260 degrees C for 2 h, in a dynamic nitrogen atmosphere of 40 sccm. After synthesis, gray-black materials were collected downstream in the tube and the samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). The results showed that the gray-black materials were composed of nanobelts, which grew in the [110] direction of the orthorhombic structure of SnO. Some of the belts also presented dendritic growth. The dendrites grew in the (110) planes of the SnO structure, and no defects were observed at the junction between the nanobelts and the dendrites. A self-catalytic vapor-liquid-solid (VLS) process was proposed to explain the growth of the SnO nanobelts and dendrites.     

Solution-liquid-solid growth of semiconductor nanowires

The serendipitously discovered solution-liquid-solid (SLS) mechanism has been refined into a nearly general synthetic method for semiconductor nanowires. Purposeful control of diameters and diameter distributions is achieved. The synthesis proceeds by a solution-based catalyzed-growth mechanism in which nanometer-scale metallic droplets catalyze the decomposition of metallo-organic precursors and crystalline nanowire growth. Related growth methods proceeding by the analogous vapor-liquid-solid (VLS) and supercritical fluid-liquid-solid (SFLS) mechanisms are known, and the relative attributes of the methods are compared. In short, the VLS method is most general and appears to afford nanowires of the best crystalline quality. The SLS method appears to be advantageous for producing the smallest nanowire diameters and for variation and control of surface ligation. The SFLS method may represent an ideal compromise. Recent results for SLS growth are summarized.     

大长径比ZnS纳米线的制备、结构和生长机理

通过碳热辅助化学气相沉积法, 以Au作为催化剂, 在较低温度(800 益)制备了ZnS纳米线, 其尺寸均匀, 表面光滑, 直径约为40 nm, 具有很大的长径比, 是典型的单晶纤锌矿六方结构. 高分辨透射电镜和选区电子衍射分析表明, 纳米线的生长方向为[1100], 与已报道的生长方向不同. 纳米线的生长是由气-液-固(vapor-liquid-solid)机理控制的.     

高分子自组装Mn2O3花瓣状纳米带、纳米线的研究

通过控制热处理工艺条件, 利用Mn(CH3COO)2和具有特殊空间构型的聚乙烯醇(PVA), 在600 ℃合成了类花瓣状Mn2O3纳米带和纳米线结构. SEM, XRD表征分析证明Mn2O3纳米带结构为方铁锰矿晶型结构, 沿(222)方向择优生长. 分析了热处理工艺对一维纳米结构的影响机制. 初步探讨了Mn2O3一维纳米结构的生长机理.     

Polymorph-tuned synthesis of α- and β-Bi2O3 nanowires and determination of their growth direction from polarized Raman single nanowire microscopy

We report polymorph-tuned synthesis of α- and β-Bi(2)O(3) nanowires and their single nanowire micro-Raman study. The single crystalline Bi(2)O(3) nanowires in different phases (α and β) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, α- and β- phase Bi(2)O(3) nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of α-Bi(2)O(3) nanowires was revealed by polarized Raman single nanowire spectra. For thin β-Bi(2)O(3) nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.     

Synthesis of CdS and ZnS nanowires using single-source molecular precursors

Single-source molecular precursors were used to synthesize II-VI compound semiconductor nanowires for the first time. Cadmium sulfide and zinc sulfide nanowires were prepared using cadmium diethyldithiocarbamate, Cd(S2CNEt2)2, and zinc diethyldithiocarbamate, Zn(S2CNEt2)2, respectively, as precursors in a gold nanocluster-catalyzed vapor-liquid-solid growth process. High-resolution transmission electron microscopy studies show that the CdS and ZnS nanowires are single-crystal wurtzite structures with stoichiometric compositions. In addition, photoluminescence measurements demonstrate that these nanowires exhibit high-quality optical properties. The applicability of our approach to the synthesis of other compound and alloy semiconductors nanowires as well as nanowire heterostructures of these materials is discussed.     

Self-assembly and hierarchical organization of Ga2O3/In2O3 nanostructures

We report on the realization of novel 3-D hierarchical heterostructures with 6-and 4-fold symmetries by a transport and condensation technique. It was found that the major core nanowires or nanobelts are single-crystalline In2O3, and the secondary nanorods are single-crystalline monoclinic beta-Ga2O3 and grow either perpendicular on or slanted to all the facets of the core In2O3 nanobelts. Depending on the diameter of the core In2O3 nanostructures, the secondary Ga2O3 nanorods grow either as a single row or multiple rows. The one-step growth of the unique Ga2O3/In2O3 heteronanostructures is a spontaneous and self-organized process. The simultaneous control of nanocrystal size and shape together with the possibility of growing heterostructures on certain nanocrystal facets opens up novel routes to the synthesis of more sophisticated heterostructures as building blocks for opto- and nanoelectronics.     

Synthesis of crystalline boron nanowires by laser ablation

Crystalline boron nanowires with tetragonal structure have been synthesized based on laser ablation of a B/NiCo target; the nanowires are sometimes single crystals and have a droplet at one end of the nanowire; the droplet contains B, Ni and Co elements, which indicates that the vapor-liquid-solid (VLS) mechanism may play a key role in the growth of the boron nanowires.