A CMOS Low-Power Optical Front-End for 5 Gbps Applications

In this paper, a new low-power optical receiver front-end is proposed in 90 nm CMOS technology for 5 Gb/s AApplications. However, to improve the gain-bandwidth trade-off, the proposed Trans-Impedance Amplifier (TIA) uses an active modified inverter-based topology followed by a common-source amplifier, which uses active inductive peaking technique to enhance the frequency bandwidth in an increased gain level for a reasonable power consumption value. The proposed TIA is analyzed and simulated in HSPICE using 90 nm CMOS technology parameters. Simulation results show a 53.5dBΩ trans-impedance gain, 3.5 GHz frequency bandwidth, 16.8pA/√Hz input referred noise, and 1.28 mW of power consumption at 1V supply voltage. The Optical receiver is completed using three stages of differential limiting amplifiers (LAs), which provide 27 dB voltage gain while consume 3.1 mW of power. Finally, the whole optical receiver front-end consumes only 5.6 mW of power at 1 V supply and amplifies the input signal by 80 dB, while providing 3.7 GHz of frequency bandwidth. Finally, the simulation results indicate that the proposed optical receiver is a proper candidate to be used in a low-power 5 Gbps optical communication system.     

Design of full-duplex and multifunction bidirectional CMOS transceiver for optical interconnect applications

This work presents a full-duplex and multifunction bidirectional transceiver for optical interconnect application. The transceiver utilizes a common limiting amplifier/gain stage, thus reducing total chip area and total power consumption. While providing a full-duplex bidirectional transmission with the aid of a hybrid circuit between the electrical input/output (I/O) and the optoelectronic signals from the transmitter and receiver circuits, it also allows for a half-duplex operation with the aid of a switch between the transimpedance amplifier signals and the transmitter electrical input from the I/O port. The multifunction bidirectional CMOS transceiver is designed in a 0.13 µm Si-CMOS technology, with power dissipation of 79 and 54.4 mW for the transmitter and receiver, respectively. It shows a 3-dB bandwidth of 5.58 and 5.69 GHz for the transmitter and the receiver respectively and with a 3-dB gain of 66.14 and 69.6 dB, in full-duplex mode. The transceiver operates up to 7 Gb/s in full-duplex mode.     

L-C耦合电路对散粒噪声探测器电子学噪声的影响

通过分析基于L-C耦合跨阻运放电路的散粒噪声探测器噪声来源,提出了电感的寄生电容对电子学噪声影响的分析模型,并进行了实验验证.研究表明,电感的寄生电容会增大跨阻运放的输入电压噪声增益,从而增加探测器的电子学噪声.当总电感值为1mH时,选用两个0.5mH的电感串联结构相比选用单个1mH的电感,探测器电子学噪声明显降低.由于电感的自共振频率越低,寄生电容越大,选用高自共振频率的电感有助于进一步降低电子学噪声.实验测量得到,在2.5 MHz分析频率处,选用两个0.5mH、自共振频率为6 MHz的电感串联相比选用单个1mH、自共振频率为1.6 MHz的电感,电子学噪声的降低了3dB.在相同入射激光条件下,该改进模型可以有效提高探测器的信噪比.     

Gain flattening technique for optical wireless front-end receiver considering various large window photodetectors

A novel gain flattening technique for an optical wireless front-end receiver structure involving a bootstrap transimpedance amplifier (BTA) integrated with a MEMS variable feedback capacitor has been demonstrated. The MEMS varicap replaces a fixed capacitance as the feedback element in the front end system to optimize the performance of the BTA in terms of its frequency response. The implementation of the MEMS device with a BTA optical front-end receiver was verified using CoventorWare ARCHITECT. The simulation results showed that the approach can significantly flatten the peaking gain by up to 14 dB, when considering a system with various photodetector capacitances, ranging in value from 100 pF to 1 nF.     

某型接收机后级放大器的设计

介绍了后级放大器的设计方法,放大器要求在1GHz带宽内增益平坦度≤±0.3dB,功率输出1dB压缩点≥8dBm.文中介绍应用ADS软件进行了电路设计和仿真,电路制版后装配调试.测试结果和仿真进行比较,指标满足设计要求.     

Input Millimeter-Wave Module with Parametric Amplification

The paper presents the experimental results of an investigation into a low-noise non-cooled amplification module consisting of the parametric amplifier and the quasi-optical pumping oscillator, intended for implementation as an input circuit of the 60 GHz wave band receivers. The coaxial waveguide resonator was used as an idler frequency loop of the parametric amplifier, while the quasi-optical sphere-corner-echelette open resonator was used as the same for the oscillatory circuit of the pumping oscillator. The experimental results for the model of amplification module, which is executed using the unpacked Schottky-barrier diode and IMPATT diode, are provided. The gain is no less than 16 dB within the 1 GHz bandwidth and the noise temperature is no more than 550 K.     

Preliminary Design of a Harmonic-doubling Gyrotron Traveling Wave Amplifier

This study proposes a Ka-band harmonic-doubling gyrotron traveling-wave amplifier (gyro- TWT), using distributed wall losses in the input stage and mode-selective interaction circuit in the output stage, to improve the stability of the amplification. Based on a large signal simulation code, a saturated peak power of 163 kW with an efficiency of 15.5%, a gain of 31.1 dB, and a 3 dB bandwidth of 0.9 GHz is predicted for the gyro-TWT driven by 70 kV, 15 A electron beam with a velocity ratio of 1.2 and velocity spread 5% at 33.2 GHz.     

Optimized photoelectric receiver to enhance modulation bandwidth of visible light communication system

In the visible light communication (VLC) system which combines lighting and communication functions, the 3-dB modulation bandwidth is mainly limited by the light-emitting diode (LED) suffered high-frequency response attenuation. An optimized photoelectric receiver was proposed to enhance the 3-dB modulation bandwidth. The frequency response of the photoelectric receiver was derived. Theoretical analysis predicted that a gain peak would appear in the high-frequency response of the photoelectric receiver. The value of the gain and the frequency point of the gain peak can be adjusted by selecting appropriate values of feedback resistor and capacitor. Then, the measurement platform of 3-dB modulation bandwidth for blue-LED VLC system was established. Experimental measurements demonstrated that the photoelectric receiver with proper sets of feedback resistor and capacitor can compensate the high-frequency response attenuation of a normal LED. The 3-dB modulation bandwidth obtains 56% enhancement if the photoelectric receiver was replaced from a commercial one to our optimized design. In order to further expand the 3-dB modulation bandwidth, an equalization circuit consists of two-stage transistor amplifier and an emitter-follower was introduced to suppress the low-frequency response. The 3-dB modulation bandwidth for the VLC system with our optimized photoelectric receiver can be expanded to 241 or 281 MHz, while the circuit was, respectively, arranged as pre-equalization or post-equalization.     

10-Gbit/s optical receiver using ICs with low-capacitance HBT technology

A 10-Gbit/s optical receiver is developed using low-capacitance HBT IC technology. The HBT allows a cutoff frequency of 45 GHz and a maximum oscillation frequency of 70 GHz. The receiver contains an automatic gain-control amplifier IC with a gain of 16 dB, a bandwidth of 10.7 GHz, and a decision-circuit IC with an ambiguity of 66 mVp-p at a data rate of 10 Gbit/s. The sensitivity of this receiver is -26.5 dBm at a bit error rate of 10^-9. Transmission over a 140-km fiber was achieved successfully.     

A proposed ultra low-noise optical receiver for 1.55 μm applications

A high-sensitivity optical receiver based on InP/InGaAs superlattice avalanche photodiode (SL-APD) followed by an InGaAs MESFET transimpedance pre-amplifier has been proposed for operation in 1.55 m wavelength region. The proposed optical receiver may be realised in the hybrid integrated circuit form. The low excess-noise factor of the SL-APD significantly reduces the value of minimum detectable optical power and improves the sensitivity of the over all receiver. The proposed receiver has been analysed theoretically. The results of computation show that the device has a high transimpedance gain (60 dB-ohm) with a bandwidth of 11 GHz for a photodetector capacitance of 110 fF. The sensitivity of the receiver has been found to be (–27.3d Bm) at operating bit rate of 15 Gb/s for a bit-error-rate of 10^–9. The performance of the receiver can be optimised in respect of transimpedance gain, bandwidth and sensitivity by following guidelines provided in this paper. The proposed photoreceiver outperforms the existing receivers based on p-i-n/FET or conventional APD/FET photoreceivers.     

Ka波段二次谐波回旋速调管放大器的输出特性

 根据谐波回旋速调管放大器的注-波互作用特点,对Ka波段二次谐波三腔回旋速调管放大器的输出腔进行了数值模拟和优化设计,获得了输出腔末端高频波绕射输出孔径和腔体绕射Q值的对应关系。通过PIC粒子模拟,分析了该放大器的频率响应特点等输出特性。结果表明,在35 GHz频率,磁场0.685 T,电子注电压70 kV,电流15 A,横纵速度比为1.45,输入功率1.6 kW时,放大器可以获得超过220 kW的峰值输出功率、约22%的效率和23 dB的增益,3 dB带宽可达到110 MHz。     

AN UNCOOLED VERY LOW NOISE SCHOTTKY DIODE RECEIVER FRONT-END FOR MIDDLE ATMOSPHERIC OZONE AND CARBON MONOXIDE MEASUREMENTS

The paper describes an uncooled front-end of the Schottky diode receiver system, which may be applied for observations of middle atmospheric ozone and carbon monoxide thermal emission lines at frequencies 110.8 GHz and 115.3 GHz, respectively. The mixer of the front-end has utilized high-quality Schottky diodes that allowed us to reduce the mixer conversion loss. The combination of the mixer and an ultra-low-noise IF amplifier in the one integrated unit has resulted in double-sideband (DSB) receiver noise temperature of 260 K at a local oscillator (LO) frequency of 113.05 GHz in the instantaneous IF band from 1.7 to 2.7 GHz. This is the lowest noise temperature ever reported for an uncooled ozone receiver system with Schottky diode mixers.     

Low-Noise Semiconductor Amplifier of Middle Part of Millimeter-Wave Range

To decrease the loss of a parametric two-circuit amplifier is a main problem of paper. The use of dielectric inserts with inclined face as a circuit of non-load frequency is considered in the study. Results of electrodynamic simulation of oscillatory processes in a dielectric insert in a rectangular waveguide are represented. Experimental amplitude and noise characteristics of the breadboard model of the parametric amplifier on the basis of the considered filter are given. Within the range of 60 GHz the amplification factor no less than 12 dB over a half-power bandwidth of 1.2 GHz has been obtained with a noise temperature of 550 K.     

970nm反射式垂直腔半导体光放大器的设计与制作

设计并制作了970 nm反射式垂直腔半导体光放大器(VCSOA),基于放大器结构,对放大器的噪声特性、增益和带宽特性进行了实验研究和理论分析.研究了反射式放大器的增益与垂直腔半导体激光器出光口径的关系,发现增益随着出光口径的增大而增大.对于970 nm的信号光,经过出光口径为400 μm的VCSOA后,最高获得了26 ...     

一种兼具宽带增益改善和宽带、宽角度低雷达散射截面的微带天线

设计并制备了一种兼具高增益和低雷达散射截面(radar cross section, RCS)的微带天线, 通过给原始微带天线加载双屏频率选择表面(frequency selective surface, FSS)覆层, 使其具有宽带的3 dB增益带宽和宽带、宽角度的低RCS特性. 该FSS单元的上层是四个开口处都焊有电阻的金属环结构, 下层是中间和四边都开缝的金属贴片结构. 上层加载的电阻主要用于吸收雷达入射波, 减缩天线RCS; 下层的贴片和天线地板构成Fabry-Perot谐振腔, 提高天线增益. 在5.75–11.37 GHz频带内, S₂₂<-10 dB, S₁₂<-10 dB; 在11.21–11.54 GHz频带内, S₁₁反射系数相位曲线斜率为正, 幅度模值均在0.86以上. 实验结果表明: 与原始天线相比, 在谐振频点11.73 GHz处, 天线增益提高3.4 dB, E, H面的半功率波束宽度分别减小16°和50°; 天线的3 dB增益带宽为10.00–12.40 GHz, 完全覆盖阻抗带宽. 在4.10–11.30 GHz 频带内, 天线法向RCS均有3 dB以上的减缩, 最大减缩23.08 dB; 4.95 GHz处的单站RCS在-20°–20°的角域、双站RCS 在-37°–37°的角域均有3 dB以上的减缩. 实验结果证实了该FSS覆层可用于同时改善天线的辐射和散射 性能. 关键词： 频率选择表面 低雷达散射截面 高增益 宽带     

Ka/Q band GaAs IMPATT amplifier technology

GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18–22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passive circuit characterization with an automatic network analyzer. In the second step, a computer is used to generate diode device lines. The third step is load line synthesis for predictable operation. The resulting performance is described. 2 W over a 2GHz bandwidth was achieved simultaneously with a minimum gain of 12 dB.     

一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

设计了一款全差分、20 GHz带宽主从式跟踪保持芯片(MS-THA)。该芯片采样率为2 G/s,工作带宽大于20 GHz,采用0.13μm SiGe BiCMOS工艺实现。该芯片采用传统的开关发射极跟随器(SEF)作为跟踪保持核心电路,Cherryhooper电路作为输入缓冲和输出缓冲的带宽增强核心电路,并利用交叉反馈电容抑制馈通。为了验证上述电路的有效性,设计了一个单级THA电路,测试结果为MS-THA电路提供了足够的支持。在单电源+3.3 V供电、输入直流电平为0 V,2 G/s采样率以及-3 dBm输入信号功率条件下,获得的单端输出无杂散动态范围小于-23.5 dB,总功耗约为300 mW。     

Kα波段TE01模基波回旋速调放大器的设计与实验

在回旋速调放大器自洽非线性大信号理论分析和数值计算的基础上,给出了一支Kα波段TE₀₁模4腔基波回旋速调放大器的设计方案,并完成了样管的研制.同时对样管进行了热测实验,得到了如下实验结果:注电压为70 kV,电流为10 A,输入功率为60 W,磁场强度1.31 T,中心频率34 GHz,峰值功率245 kW,平均功率大于3 kW,增益36.1 dB,效率 35%,3 dB带宽大于280 MHz. 关键词： 回旋速调放大器 注-波互作用 群聚腔 输入腔     

W波段回旋行波管放大器的模拟与设计

回旋行波管放大器是高功率毫米波雷达发射系统最重要的候选者.通过对回旋行波管放大器中的绝对不稳定性、回旋返波振荡以及电子注-波互作用的研究，讨论了回旋行波管的稳定性、寄生模式的抑制和工作参数的优化等问题，给出了W波段TE₀₁模回旋行波管放大器的模拟设计结果.PIC粒子模拟结果表明，在电子注电压100kV、电流10A、工作磁场3.52T时，94GHz的基波回旋行波管放大器可获得大于250kW的输出功率、40dB的增益、大于25％的效率和约5％的带宽. 关键词： W波段 回旋行波管放大器 模拟 设计     

A High-Gain, 28GHz, 200kW Gyroklystron Amplifier

A design study of a high efficiency/gain gyroklystron amplifier is performed to demonstrate amplified radiation power of 200kW operating at 28GHz. A key design feature of the present gyroklystron amplifier is that the amplifier is designed to be high gain so that it can be saturated by a low power solid state power amplifier. A non-linear, time-dependent, large signal numerical code is used to predict tube performance. Simulations predict that a stable amplifier radiation power of 214kW is produced with a saturated gain of 54dB, an electronic efficiency of 37%, and a frequency bandwidth of 0.3% from a five-cavity gyroklystron amplifier. The amplifier gain is found to be very sensitive to a beam velocity spread.