I/f noise in systems showing stochastic resonance

Stochastic resonator systems with input and/or output 1/f noise have been studied. Disordered magnets/dielectrics serve as examples for the case of output 1/f noise with white noise (thermal excitation) at the input of the resonators. Due to the fluctuation-dissipation theorem, the output noise is related to the out-of-phase component of the periodic peak of the output spectrum. Spin glasses and ferromagnets serve as interesting examples of coupled stochastic resonators. A proper coupling can lead to an extremely large signal-to-noise ratio. As a model system, a l/f-noise-driven Schmitt trigger has been investigated experimentally to study stochastic resonance with input 1/f noise. Under proper conditions, we have found several new nonlinearity effects, such as peaks at even harmonics, holes at even harmonics, and 1/f noise also in the output spectrum.     

Resonance effects in the nonadiabatic nonlinear quantum dimer

In the presence of 1/f ^β noise, we investigate the logical stochastic resonance (LSR) in an asymmetric bistable model driven by various cycling combinations of two logic inputs. The probability of correct logic outputs is calculated according to true table of logic relationships. Two major results are presented. Firstly, it is shown that the LSR effect can be obtained by changing noise strength. Over entire range of noise variance, white noise can be considered to be better than 1/f noise or 1/f ² noise to obtain clean logic operation. At a smaller noise level, 1/f noise can realize higher output probability than white noise or 1/f ² noise. In the sense, 1/f noise can be considered to be better than white noise or 1/f ². On the other hand, the correct probability can evolves nonmonotonically as noise exponent β increases, and a kind of SR-like effect can be obtained as a result of β. At certain intermediate noise variance, the output probability is able to attain its minimum at β = 1. It is also shown that actually some finite β sometime can be better than β = 0 at small range of noise variance. The study might provide some potential complement to LSR effect in the presence of 1/f ^β noise.     

1/f Noise in a nonequilibrium phase transition: Experiment and mathematical model

The results of an experimental investigation of a high-power source of broad-band 1/f noise, which can be generated in a system of two interacting nonequilibrium phase transitions, are presented. This process takes place when a normal conductor-superconductor phase transition is superposed on the critical liquid-vapor transition in a boiling coolant. A mathematical model describing a nonequilibrium phase transition in a complicated nonlinear system with two interacting order parameters, which involves the conversion of white noise into stochastic fluctuations of the order parameters with 1/f and 1/f ² spectra, is proposed. The properties of the model fluctuations with a 1/f spectrum agree qualitatively with the experimentally observed properties. A characteristic difference between the model fluctuations with a 1/f ² spectrum and random walks is also noted. Zh. éksp. Teor. Fiz. 113, 1748–1757 (May 1998)     

PbS红外探测器低频噪声物理模型及缺陷表征研究

为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性. 利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度. 得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致. 在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法. 关键词： 红外探测器 1/f噪声')" href="#">1/f噪声 噪声')" href="#">g-r噪声 缺陷     

CMOS 1/f noise: n-channel versus p-channel

This note reports on the noise of CMOS devices. It is shown experimentally that a weak boron threshold implant (10¹² cm^–3) can influence the 1/f noise levels. For wafers with threshold adjustment the p-channel noise decreases whilst the n-channel noise increases. The changes in the n/p noise ratio with/without threshold implantation are predicted using a simple model in conjunction with carrier profile simulations.     

Physics of fluctuation processes in downscaled silicon MOSFETs

Physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs (metal-oxide-semiconductor field-effect transistors) including the ultra-thin film SOI (siliconon-insulator) devices using strained silicon films are reviewed. The review is substantially based on the results obtained by the authors. It is shown that the following drastic changes occur in the nature and parameters of noise in such devices as a result of their downscaling when the gate oxide thickness and the channel length and width are decreased, the SOI substrates are used, the silicon film thickness is reduced, the film doping level is varied, the strained silicon films are employed, etc. Firstly, the Lorentzian components can appear in the current noise spectra. Those components are due to (i) electron tunneling from the valence band through the gate oxide in the SOI MOSFETs of a sufficiently thin gate oxide (LKE-Lorentzians); (ii) Nyquist fluctuations generated in the source and drain regions near the back Si/SiO₂ interface in the SOI MOSFETs (BGI Lorentzians); (iii) electron exchange between the channel and some single trap in the gate oxide of the transistors with sufficiently small length and width of the channel (RTS Lorentzians). Secondly, the 1/f-noise level can increase due to (i) the appearance of recombination processes near the Si/SiO₂ interface activated by the currents of electron tunneling from the valence band; (ii) an increase in the trap density in the gate oxide of the devices fabricated on the biaxially tensile-strained silicon films; (iii) the contribution of the 1/f fluctuations of the current flowing through the gate oxide as a result of electron tunneling from the conduction band. At the same time, the 1/f-noise level may decrease due to a decrease in the trap density in the gate oxide of the transistors fabricated on the uniaxially tensile-strained silicon films. Moreover, a 1/f ^1.7 component may appear in the noise spectra for the transistors of a sufficiently thin gate oxide, whose component is due to charge fluctuations on the defects located near the interface between the gate polysilicon and the gate oxide.     

钪原子的自电离里德伯能级3d4s(1D2)nf2 D3/2,3d4s(1D2)nf2 F5/2和3d4s(1D2)np2 D3/2<

在多通道量子亏损理论框架下,利用相对论多通道理论,分别在冻结实近似和考虑偶极极化下计算钪原子的J^π=(3/2)^-,(5/2)^-的三个收敛于 3d4s(¹D₂)的自电离里德伯系列的能级.对3d4s(¹D₂)np²D_3/2和3d4s(^{1 关键词： 相对论多通道理论 多通道量子亏损理论 电子-电子关联 自电离里德伯系列}     

1/f noise at a critical nonequilibrium phase transition

The generation of 1/f noise is demonstrated experimentally in a system consisting of a superconducting film carrying a transport current in contact with a boiling liquid coolant. It is found that wide-band 1/f noise with a large amplitude of the fluctuations is observed over a wide range of parameters. This noise is attributed to the fact that the sub-systems in contact have the same character of the relaxational dependences δT(t)∼ t ^−1/2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 9, 739–742 (10 May 1996)     

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Silicon diodes with a p ⁺-n junction made in a 48-μm-thick phosphorus-doped silicon epilayer (resistivity ρ = 30 Ω cm) grown on antimony-doped Si(111) wafers (ρ = 0.01 Ω cm) are studied. The diodes are irradiated by high-energy (3.5 MeV) electrons with fluences from 5 × 10¹⁵ to 2 × 10¹⁶ cm⁻². It is shown that the conventional equivalent circuit of the diode that consists of a parallel RC network and a series-connected resistor inadequately describes the dependence of the dielectric loss tanδ on variable current frequency f in the range 1 × 10²–3 × 10⁷ Hz. Another equivalent circuit is suggested that includes not only the capacitance and resistance of the n-base (the latter increases because radiation-induced defects are compensated for by shallow donors) but also the f dependence of the capacitance of the space-charge region, which is due to retarded charge exchange between deep-level radiation-induced defects.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Noises generated by nonlinear autoregression

A nonlinear generalization of autoregressive scheme of first order is suggested as approximate model for 1/f^k noises. The iterative generation makes use of reducing function instead of a constant. Computer simulations – carried out over three decades of frequency – have demonstrated that there is such a family of these functions that to any function of the family there exists a unique value of standard deviation of white noise source such that the noise generated by the iterative scheme has the spectral factor k ≈ 1. Implications of the results for understanding the origin, structural stability and ubiquity of 1/f noise are discussed.     

Are there critical points on the boundaries of singular domains?

Generalizing a result of E. Ghys, we prove a general theorem that implies that if a rational functionf of the Riemann sphere of degree 2 leaves invariant a singular domainC (a disk or a ring) on which the rotation number off satisfies a diophantine condition, provided that on f is injective, then each boundary component ofC contains critical point off. The injectivity condition is always satisfied for singular disks associated to linearizable periodic elliptic points off(z)=z ⁿ +a, withn,n2 anda. We also show that the singular disks, associated to periodic elliptic points off(z)=e ^az that satisfy a diophantine condition, are unbounded in . In the end of the paper, we give a survey of the theory of iteration of entire functions of .     

Multiphoton ionization of molecules under the conditions of strong field-induced perturbation of Rydberg states

Multiphonon ionization of the H₂ molecule under the action of a weak (probe) field, which provides the initial population of the low-lying (working) level, and intense monochromatic linearly polarized radiation is studied. The multiphoton ionization process occurs under the conditions of strong field perturbation of two intermediate Rydberg series, np0(¹Σ _u ⁺ and np2(¹Π_u), of the optical R(0)branch which have different ionization potentials. The series are occupied simultaneously as a result of single-photon absorption by an excited H ₂ ^* molecule in the working state 4s σH′¹Σ _g ⁺ (v=0). As a result of the irregularity in the arrangement of the intermediate levels from a large group of states that are combined in the multiphoton ionization process a sharp and irregular change occurs in the dependence of the shifts and widths Γ_n of the levels on the intensity f of the strong field in a transition from one level to another. It is shown that for field intensities f such that the level widths remain much less than the splitting between the levels (Γ_n≪/n ³) the stabilizing effect (i.e., the field-induced narrowing of the levels as f→∞) in the form Γ_n ∝ 1/f ² (as happens in atoms with a structureless core) is not observed in molecular systems. Zh. éksp. Teor. Fiz. 115, 1987–2000 (June 1999)     

Capacity of Multivariate Channels with Multiplicative Noise: Random Matrix Techniques and Large-N Expansions (2)

We study memoryless, discrete time, matrix channels with additive white Gaussian noise and input power constraints of the form Y i = ∑ _j H _ij X _j + Z _i , where Y _i , X _j and Z _i are complex, i = 1… m, j = 1… n, and H is a complex m× n matrix with some degree of randomness in its entries. The additive Gaussian noise vector is assumed to have uncorrelated entries. Let H be a full matrix (non-sparse) with pairwise correlations between matrix entries of the form E[H ik H ^* jl] = 1/n C ij D kl, where C, D are positive definite Hermitian matrices. Simplicities arise in the limit of large matrix sizes (the so called large-n limit) which allow us to obtain several exact expressions relating to the channel capacity. We study the probability distribution of the quantity f(H) = log (1+PH ^† SH) . S is non-negative definite and hermitian, with TrS = n and P being the signal power per input channel. Note that the expectation E[f(H)], maximised over S, gives the capacity of the above channel with an input power constraint in the case H is known at the receiver but not at the transmitter. For arbitrary C, D exact expressions are obtained for the expectation and variance of f(H) in the large matrix size limit. For C = D = I, where I is the identity matrix, expressions are in addition obtained for the full moment generating function for arbitrary (finite) matrix size in the large signal to noise limit. Finally, we obtain the channel capacity where the channel matrix is partly known and partly unknown and of the form α; I+ β H, α,β being known constants and entries of H i.i.d. Gaussian with variance 1/n. Channels of the form described above are of interest for wireless transmission with multiple antennae and receivers.     

金属氧化物半导体场效应管热载流子退化的1/fγ噪声相关性研究

研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/f^γ噪声特性.基于Si/SiO₂界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sf ^{关键词： 金属氧化物半导体场效应管 热载流子 fγ噪声')" href="#">1/fγ噪声}     

Collective bands of the positive parity states inf 7/2 shell nuclei

Collective bands of the positive parity states in odd-A f _7/2 shell nuclei are described in the framework of deformed Hartree-Fock theory by projecting states from lowest energy intrinsic states with (d ₃ ^2/−1 f ₇ ^2/n+1 ) one hole configurations. In the calculation empirical (d _3/2 −f _7/2)² effective matrix elements have been used to test the tacit assumptions of the Bansal and French model.     

基于小波变换和维纳滤波的半导体器件1/f噪声滤波

针对半导体器件中普遍存在的1/f噪声提出了一种结合了提升小波变换和维纳滤波器的处理方法.首先利用重新加权迭代最小二乘法拟合1/f噪声的功率谱曲线得到噪声参数的估计,从而选择恰当的小波.其次,对包含了1/f噪声的信号进行提升小波变换.考虑到小波变换对1/f噪声的白化作用,利用维纳滤波器对每一层小波系数进行处理.设计了最优全通滤波器以校正维纳滤波器的相频特性,使得小波系数经滤波后相位不变.最后利用提升小波逆变换获得被1/f噪声淹没的信号.利用实验检验了提出方法的有效性,实验数据采自用于微创外科手术机器人的力传感器.结果表明提出的方法能够有效抑制1/f噪声,并使传感器的分辨力提高了25%. 关键词： 半导体器件 f噪声')" href="#">1/f噪声 提升小波变换 维纳滤波     

Identification of inherent noise components of semiconductor devices on an example of optocouplers

In the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to 1/f^α noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise spectrum.     

Calculating Topological Entropy

The attempt to find effective algorithms for calculating the topological entropy of piecewise monotone maps of the interval having more than three monotone pieces has proved to be a difficult problem. The algorithm introduced here is motivated by the fact that if f: [0, 1] → [0, 1] is a piecewise monotone map of the unit interval into itself, thenh(f)=lim_n→∞ (1/n) log Var(f ⁿ), where h(f) is the topological entropy off, and Var(f ⁿ) is the total variation off ⁿ. We show that it is not feasible to use this formula directly to calculate numerically the topological entropy of a piecewise monotone function, because of the slow convergence. However, a close examination of the reasons for this failure leads ultimately to the modified algorithm which is presented in this paper. We prove that this algorithm is equivalent to the standard power method for finding eigenvalues of matrices (with shift of origin) in those cases for which the function is Markov, and present encouraging experimental evidence for the usefulness of the algorithm in general by applying it to several one-parameter families of test functions.     

Resonant inelastic x‐ray scattering from highly correlated dysprosium compounds

Dy₂O₃ and Dy metal's resonant inelastic x‐ray scattering (RIXS) spectra were measured in the Beijing Synchrotron Radiation Facility. As a bulk sensitive probe and two‐photon process, RIXS provides more information on the electronic structure of matter. In this full RIXS experiment, the 2p⁶4fⁿ→ 2p⁵4fⁿ5d¹ (2p⁵4f^{n + 1}5d⁰) → 2p⁶3d⁹4fⁿ5d¹ (2p⁶3d⁹4f^{n + 1}5d⁰) channel of two samples (Dy₂O₃ and Dy metal) was studied. Further comparison shows that there are many differences in the RIXS spectra. Dy metal has only a single resonance and its 5d band is broader than that of Dy₂O₃. In the resonant regime, it has a lower final state energy, whereas in the non‐resonant regime it exceeds Dy₂O₃. This causes a broader bandwidth of the main final state B and a narrower bandwidth in the resonant and non‐resonant regime. The pre‐edge structure in Dy L₃ absorption spectra was also resolved using RIXS, which cannot be seen in conventional XAS owing to 2p core hole lifetime broadening. Copyright © 2005 John Wiley & Sons, Ltd.