垂直场下磁性薄膜中的铁磁共振现象

将铁磁共振频率看成外磁场的函数, 讨论了垂直场下磁性膜中的铁磁共振现象. 结果显示: 当外磁场平行于膜面, 并考虑磁膜具有垂直磁晶各向异性情形时, 其磁共振频率随外磁场的变化分为高频支和低频支两种情况, 具体的依赖关系取决于磁膜内磁晶的各向异性; 当外磁场垂直于膜面, 其磁共振频率随外磁场的关系仅存在一支, 一般地, 磁共振频率随外磁场的增加单调地非线性减小, 但当立方磁晶各向异性场H_k1 与单轴磁晶各向异性场H_a之比值介于2/3 < H_k1/H_a <1时, 其磁共振频率随外磁场的增加单调增加, 这与相关的实验结果一致. 研究结果表明: 磁薄膜中有无垂直于膜面的磁各向异性可以通过其磁共振谱的测量进行辨析.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

脉冲磁场对水热法制备Mn掺杂ZnO稀磁半导体的影响

本文以Zn(CH₃COO)₂·2H₂O, Mn(CH₃COO)₂·4H₂O和氨水缓冲溶液为原料, 在4 T脉冲磁场下利用水热法制备了Mn掺杂ZnO稀磁半导体晶体, 通过X射线衍射、 扫描电子显微镜、透射电子显微镜、拉曼光谱、荧光分光光度计及振动样品磁强计等对样品的微观结构及磁性能等进行了表征, 结果表明: Mn掺杂ZnO稀磁半导体晶体仍保持ZnO六方纤锌矿结构, 4 T脉冲磁场下合成的Mn掺杂ZnO稀磁半导体晶体具有明显的室温铁磁性, 其饱和磁化强度(M_s)为0.028 emu/g, 比无脉冲磁场下制备的样品提高一倍以上, 且4 T 脉冲磁场将样品的居里温度提高了15 K.     

在强磁场中金属薄膜的超导电理论(Ⅰ)

本文研究了在接近转变温度T_c的区域内,超导薄膜在磁场中的性质。磁场是沿着超导膜的表面。在文章中,首先对Γорьков理论进行了分析,指出这个理论实际上是采用了局域近似,这个近似主要是隐含在他所采用的磁场中电子Green函数G_ω⁰(rr′)的表示式中。作者指出,Γорьков所采用的G_ω⁰(rr′)表示式对于本文研究的问题是不适用的,本文采用G_ω⁰(rr′)按矢势的微扰展开式。本文把Γорьков的补偿方程和电流方程推广到超导膜。对于d<δ₀(T)的膜,求出了这二个方程的解,得到超导薄膜的矢势、磁矩、能隙和临界电流的表达式,并研究了超导薄膜在磁场中的相变问题,求得超导薄膜的临界磁场。本文所得到的结果,对比较厚的膜(d?ξ₀)和ГЛ理论一致,而对比较薄的膜(d<ξ₀)和ГЛ理论有着显著不同(除了临界电流和超导膜在磁场中相变级数的判据外),二者的差异特别是表现在对厚度依赖关系上。由于本文所采用的近似,所得到的结果适用于δ₀(T)>d?d^*情形,其中2d^*=(1/(0.36)×ξ₀/p₀)^1/2,对于Sn,2d^*～10^-6cm。     

自旋为1/2的XY模型亚铁磁棱型链的物性和有序-无序竞争

利用不变本征算符法, 计算低温下自旋为1/2的XY模型一维亚铁磁棱型链系统的元激发谱, 讨论在此系统中不同的特殊情形下的元激发能量, 从而给出体系的三个临界磁场强度的解析解H_C1, H_C2, H_peak. 分析不同外磁场下 体系的磁化强度随温度的变化规律, 发现三个临界磁场强度的解析解H_C1, H_C2, H_peak是正确的, 并从三个元激发对磁化强度的贡献进行了说明. 低温下磁化强度随外磁场的变化呈现1/3磁化平台. 体系的磁化率随温度或者外磁场的变化都出现了双峰现象. 这说明双峰源于二聚体分子内电子自旋平行排列的铁磁交换作 用能和二聚体与单基体分子间电子自旋反平行排列的反铁磁交换作用能, 热无序能, 外磁场强度相关的自旋磁矩势能之间的竞争.     

确定磁性体在绝热磁化过程中达到最高温度的方法

在磁性体磁化过程中, 决定其能够达到的最高温度, 对磁热材料的优化选取是重要的. 本文以钆镓石榴石(Gd₃Ga₅O₁₂) 为例, 根据高磁场下趋近饱和定律的思想, 给出了低温、超强磁场下, Gd₃Ga₅O₁₂晶体等效磁化率的定量形式. 在外磁场从0---40 T范围内, 计算了该晶体的磁熵变、声子熵变以及磁性体温度随外磁场的变化, 结果均与实验值符合较好. 利用声子熵变与饱和磁熵变曲线交点的唯一性, 给出了在磁性体磁化过程中, 确定其温度达到最大值的方法, 预言了Gd₃Ga₅O₁₂晶体在绝热磁化过程中达到的最高温度为64.7K. 该方法还可以对所加外磁场大小进行预言或估计.     

一级相变材料Mn1.2Fe0.8P0.4Si0.6的热磁发电性能

本文报道把热能直接转换电能的热磁发电技术所用一级相变新材料Mn_1.2Fe_0.8P_0.4Si_0.6的磁性和热磁发电性能.用高能球磨机械合金化技术和固相烧结合成方法制备了Mn_1.2Fe_0.8P_0.4Si_0.6化合物.磁性测量结果表明,该化合物呈现从铁磁状态变为顺磁状态的一级相变,居里温度为337K,并伴随巨大的磁化强度的变化.根据该材料的这一特性,设计制作了热磁发电演示装置,测定了热流引起材料的相变而产生的电流,并研究了固定磁场中热致磁转变产生的电流随热流温度和样品质量的变化.研究结果表明Mn_1.2Fe_0.8P_0.4Si_0.6化合物具有很好的热磁发电性能,可作为热磁发电材料.     

脉冲磁场下水热法制备Cr掺杂ZnO稀磁 半导体晶体

本文以ZnCl₂, CrCl₃. 6H₂O和氨水缓冲溶液为原料, 在4T脉冲磁场下水热法制备了Cr掺杂ZnO稀磁半导体晶体, 通过X射线衍射分析、扫描电子显微镜观察及采用振动样品磁强计进行磁性分析等, 探讨了脉冲磁场对其微观结构及磁性能的影响. 结果表明: Cr掺杂ZnO稀磁半导体晶体仍保持ZnO的六方纤锌矿结构, 脉冲磁场具有促进晶粒生长及取向排列的作用, 4T脉冲磁场条件下合成的Cr掺杂ZnO稀磁半导体具有良好的室温铁磁性, 其饱和磁化强度(M_s)为0.068 emu/g, 而无脉冲磁场情况下制备的样品室温下呈顺磁性, 并且, 脉冲磁场下制备将稀磁半导体的居里温度提高了16 K.     

高温超导技术在微磁传感器中的应用与发展

磁传感器在诸多领域有着广泛的应用,而随着高温超导技术的快速发展,将高温超导材料应用于磁信号测量成为超导材料应用的一个重要领域。文章探讨了高温超导材料在微弱磁场测量方面的主要应用,介绍了三种在微弱磁场测量方面能达到或有希望达到f T量级的传感器。其中包括:基于约瑟夫森结效应的超导量子干涉器(SQUID),基于超导零电阻效应的巨磁电阻(GMR)磁传感器和由文章作者所在的实验室提出的巨磁阻抗(GMI)/超导复合磁传感器。文章重点介绍了GMI/超导复合磁传感器,并对此传感器在结构和应用方面的最新进展进行了说明。     

先位粉末套管法制备MgB2/Fe线材的超导性能研究

采用先位法将MgB2粉装入纯铁管中,制备出MgB2/Fe超导线材.用X射线衍射仪和扫描电子显微镜分析了样品的物相组成和显微结构;用SQUID测量了样品的超导转变温度;用标准四引线法测量了短样的临界电流.结果显示,超导样品的临界转变温度约为38.3 K,在4.2 K/4 T下MgB2/Fe线材的临界电流密度为～104A/cm2.研究结果表明,高温退火有效地减少了冷加工过程中产生的应力,改善了晶粒连接性,提高了芯材的致密度,可以显著地提高先位法制备线材的临界电流密度.     

The superconducting properties of Cu-doped MgB2 bulks prepared by a high-energy milling method

The Cu-doped MgB₂ bulks were prepared by a high-energy milling and subsequent sintering method. Compared to the pure and Cu-doped bulks prepared only by sintering, the critical current density (J_c) of the milled Cu-doped samples was improved with a slight decrease in critical transition temperature (T_c). Using the phase analysis and microstructure observation, it has been found that the MgB₂ grains in the milled Cu-doped sample was refined with the high-energy milling and thus provided more grain boundary pinning, which was contributed to the improvement of J_c at high field.     

柠檬酸掺杂的MgB2超导体钉扎机理的研究

本文研究了柠檬酸掺杂的MgB₂超导材料的J_c-B行为及其钉扎机理.在纯MgB₂多晶样品中,δT_c钉扎起主要作用,而在掺杂的样品中,则是δl钉扎和δT_c钉扎共同作用,并且δl钉扎机理占主要作用,其贡献比重随着掺杂量的增加而增加.从J_c-B行为和钉扎行为的分析都可以得到 关键词： 柠檬酸 2')" href="#">MgB₂ T_c钉扎')" href="#">δT_c钉扎 l钉扎')" href="#">δl钉扎     

Enhanced critical current density of MgB2 thin films deposited at low temperatures by ZnO seed impurity

We report a facile method to enhance the critical current density (J_c) of superconducting MgB₂ thin films. MgB₂ thin films were deposited on zinc acetate dehydrate (Zn(CH₃COO)₂2H₂O) spin-coated Al₂O₃ (000l) substrates by using a hybrid physical-chemical vapor deposition system at low temperatures. Synthesis of MgB₂ at low temperatures can reduce the substitution of Zn into the Mg site, hence avoiding the reduction of superconducting critical temperature. MgB₂ thin films grown on ZnO-buffered layers showed a significant enhancement of J_c in the magnetic field due to the creation of additional pinning sources, namely point defects and grain boundaries. Broad peaks were observed in the magnetic field dependence of the flux pinning force density, indicating competition of different pinning sources.     

A new model analysis of the third harmonic voltage in inductive measurement for critical current density of superconducting films

The critical current density J c is one of the most important parameters of high temperature superconducting films in superconducting applications,such as superconducting filter and superconducting Josephson devices.This paper presents a new model to describe inhomogeneous current distribution throughout the thickness of superconducting films applying magnetic field by solving the differential equation derived from Maxwell equation and the second London equation.Using this model,it accurately calculates the inductive third-harmonic voltage when the film applying magnetic field with the inductive measurement for J c.The theoretic curve is consistent with the experimental results about measuring superconducting film,especially when the third-harmonic voltage just exceeds zero.The J c value of superconducting films determined by the inductive method is also compared with results measured by four-probe transport method.The agreements between inductive method and transport method are very good.     

Effects of nano-carbon doping and sintering temperature on microstructure and properties of MgB2

We fabricated nano-carbon (NC) doped MgB₂ bulks using an in situ process in order to improve the critical current density (J_c) under a high magnetic field and evaluated the correlated effects of the doped carbon content and sintering temperature on the phase formation, microstructure and critical properties. MgB_2−xC_x bulks with x = 0 and 0.05 were fabricated by pressing the powder into pellets and sintering at 800 °C, 900 °C, or 1000 °C for 30 min.We observed that NC was an effective dopant for MgB₂ and that part of it was incorporated into the MgB₂ while the other part remained (undoped), which reduced the grain size. The actual C content was estimated to be 68–90% of the nominal content. The NC doped samples exhibited lower T_c values and better J_c(B) behavior than the undoped samples. The doped sample sintered at 900 °C showed the highest J_c value due to its high doping level, small amount of second phase, and fine grains. On the other hand, the J_c was decreased at a sintering temperature of 1000 °C as a result of the formation of MgB₄ phase.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Enhancement of Jc by Hf-doping in the superconductor MgB2: A hyperfine interaction study

Measurements of the critical current density (J_c) by magnetisation and the upper critical field (H_c2) by magnetoresistance have been performed for hafnium-doped MgB₂. There has been a remarkable enhancement of J_c as compared to that by ion irradiation without any appreciable decrease in T_c, which is beneficial from the point of view of applications. The irreversibility line extracted from J_c shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB₂ phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of J_c in MgB₂ superconductor.     

Global and local critical current density in superconducting SmFeAsO1−xFx measured by two methods

The critical current densities of polycrystalline bulk SmFeAsO_1−xF_x prepared by the powder-in-tube (PIT) method and by a conventional solid-state reaction were investigated using the remnant magnetic moment method and Campbell’s method. Two types of shielding current, corresponding to global and local critical current densities J_c were observed using both measurement methods. The global and local J_c were on the order of 10⁷ A/m² and 10¹⁰ A/m² at 5 K, respectively. The local J_c decreased slightly with increasing magnetic field. The global J_c was independent of the preparation method, while the local J_c was larger for samples prepared by PIT than for those prepared by solid-state reaction.     

Effect of grain-boundary flux pinning in MgB2 with columnar structure

We studied the flux pinning properties by grain boundaries in MgB₂ films prepared by using a hybrid physical chemical vapor deposition method on the c-axis oriented sapphire substrates. All the films we report here had the columnar grains with the growth direction perpendicular to the substrates and the grain sizes in the range of a few hundred nanometers. At very low magnetic fields, no discernable grain-boundary (GB) pinning effect was observed in all measuring temperatures, but above those fields, the effect of GB flux pinning was observed as enhanced critical current densities (J_cs) and reduced resistances when an external magnetic field (B) was aligned parallel to the c-axis. We interpret the B dependence of J_c in the terms of flux line lattice shear inside the columnar grains activated by dislocations of Frank–Read source while the flux lines pinned by GB act as anchors for dislocations. Magnetic field dependence of flux pinning force density for B parallel to the c-axis was reasonably explained by the above model.