Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Dilute nitride InAsN epitaxial layers were produced using both liquid phase and molecular beam epitaxial growth techniques. The spectral features in the photoluminescence of samples containing up to 1% N with emission energies in the mid-infrared spectral region are described and compared. The emission intensities of both LPE and MBE grown materials were found to be comparable. Increasing the N content in the InAsN alloys resulted in a significant increase in the activation energy for thermal quenching of the photoluminescence emission due to a combination of lowering of the conduction band edge and Auger de-tuning.     

Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

Greenish-white electroluminescence (EL) was observed from the heterojunction light-emitting diodes (LEDs) composed of p-type (001) CuGaS₂ chalcopyrite semiconductor epilayers and preferentially (0001)-oriented polycrystalline n-type ZnO thin films. The CuGaS₂ layers were grown on a (001) GaP substrate by metalorganic vapor phase epitaxy and the ZnO films were deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The n-ZnO/p-CuGaS₂ LED structure was designed to enable an electron injection from the n-type wider band gap material forming a TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although their higher energy portions were absorbed by the GaP substrate. Since the spectral lineshape resembled that of the photoluminescence from identical CuGaS₂ epilayers, the EL was assigned to originate from p-CuGaS₂.     

A direct observation of the two-dimensional π-d bands for adsorbed CO

Angle-resolved photoelectron spectroscopy has been utilized to measure the dispersion and symmetry of the spectral features in thed band region of Ni induced by the adsorption of CO. Very strong alteration of thed-band emission characteristics are observed when CO is adsorbed onto Ni(110) in the (2×1) p2mg ordered phase. The high density and unique symmetry of this overlayer allows an unambigeous identification of these spectral features as the two-dimensional-d surface bands induced by the chemical bond of CO to Ni, i.e. the CO 2-Ni 3d interaction. These results make it possible to reconcile other measurements and to generate a more definitive picture of how the Blyholder model for CO-metal interaction should be applied to surfaces.     

Luminescent properties of A1N activated by europium

The concentration and temperature dependence of emission and excitation spectra was measured on powder A1NEu phosphors. It was shown that A1N: Eu has two luminescent modifications which depend on the activator concentration. At low activator concentration the wide emission band is found in the blue-green region, while at high concentration it is in green region. The excitation spectra of A1NEu consist of wide bands extended from 40×10³ cm^–1 to 22 × × 10³ cm^–1. The emission and excitation spectra are interpreted as transitions between energy levels of Eu²⁺ ions (4f⁷4f⁶ 5d transitions). The structure of the Eu²⁺ luminescent centres and the temperature dependence of luminescence are discussed.The authors thank Dr. M.Polcarová for the RTG measurements and Mrs. I.Míková for the spectral analysis of the A1N: Eu samples. The authors are also grateful to Prof. M.Trlifaj, Dr. J.Pastrák and Dr. J.Kubátová for valuable discussions.     

Room-Temperature 2.5 eV Pulsed Cathodoluminescence Band of High-Purity Silicon Dioxide

We study the room-temperature (RT) pulsed cathodoluminescence (PCL) spectra of a set of pure synthetic (both crystalline and amorphous) silicon dioxide samples. We show that the PCL spectra of all samples (both amorphous and crystalline) possess bands with intensity maxima in the region of 487 – 500 nm (2.54 – 2.48 eV). These bands are the most intense in the PCL spectra of disordered materials. We investigate the annealing behavior of RT PCL spectra of the crystalline and amorphous samples. Annealing has no significant effect on this emission. We demonstrate that the surface area of the material plays no role in the emission of PCL bands at 415 and 490 nm in the spectra of α-quartz single crystal and crystalline powder with grain sizes of 10 – 100 μm. Our results show that the bands in the region of 2.5 eV are the universal property of all synthetic pure SiO₂ samples. The nature of the SiO₂ emission band in the region of 2.5 eV is not clear; we discuss two possible explanations. The first one is based on considering the intrinsic emission due to self-trapped exciton (STE) decay with the transient O-O (oxygen–oxygen) bond formation. The second one is based on the role of Li ions in the emission process.     

Some optical properties of (ZnS)−(GaP) alloys and their interpretation

Optical measurements on the single crystals of the pseudobinary (ZnS)?(GaP) alloy were carried out. The band gap energy decreased more rapidly with increase in GaP concentration than that reported previously. The analysis of the absorption spectra for the crystals of up to 70 mole % GaP indicated a direct transition characteristic, and that the band gap becomes nearly equal to that of pure GaP at about 30 mole % GaP. The photoluminescence spectra observed at liquid nitrogen temperature could first be resolved into three kinds of emission band with Gaussian distribution. The peak energy of these bands were found to be independent of the band gap variation. Thus the observed peak energy shift with alloy composition was attributed to the variation of the emission intensity of each band. The band gap shrinkage and the origin of the photoluminescence spectra on the basis of a molecular orbital method were discussed.     

Evolution of the Electroluminescence Spectra and the Acoustic Emission of the Epitaxial Structures of GaAsP

The dependence of the spectral position of the electroluminescence bands of epitaxial light-emitting diode n ⁺–n–p structures (GaAs_0.15P_0.85) on the density of a direct heterojunction current at different successive instants of time — before an acoustic emission and after it — has been revealed. The shifts of the electroluminescence bands accompanied by acoustic emission can be divided into three types according to the density of the current: (1) short-term shifts due to relaxation of the defect structure of a sample — at relatively low currents, (2) the magnitude of the reverse shift being determined by the current density — at large currents, and (3) formation of an IR band (1.5–1.1 eV) with irreversible degradation changing in the red (1.75 eV) and green (2.19 eV) bands of the electroluminescence spectrum — at ultrahigh currents (100–200 A/cm²).     

InP中和C带有关深能级的近红外光致发光

本文用红外光致发光方法研究了InP中与C带有关的深能级的性质和起源。峰值位于价带上0.34eV(77K)附近的宽谱带普遍存在于不同方式生长的InP外延层和掺Sn与不掺杂的衬底中,且与P空位引起的复合缺陷有关。 通过红外光致发光强度对温度的依赖关系得到C带的热激活能为0.17eV。这刚好与采用σ函数来描述深能级的Locovsky模型相吻合,光谱线型与温度猝灭的量子力学位形坐标模型拟合,得到与C带有关的深能级hv=0.02eV,S=8。     

Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1−xAsySb1−y epitaxial layers for photovoltaic applications

In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases.     

Cathodoluminescence Spectral Characteristics of Quartz and Feldspars in Unaltered and Hydrothermally Altered Volcanic Rocks (Almeria,Spain)

The volcanic rocks of the Cabo de Gata region have been transformed by hydrothermal alteration, forming in some areas, highly silicified and feldspatized rocks. Various samples from outcrops of unaltered and hydrothermally altered volcanic rocks were studied by conventional transmitted-light microscopy to determine their genesis (magmatic, inherited or neoformed) and scanning electron microscope cathodoluminescence to define their spectral features. The magmatic quartz shows emission bands at 400, 440, and 480nm., and these bands disappear or decrease in the secondary hydrothermal quartz, characterized also by an intense emission band at around 570–580 nm, and another around 460 nm. The inherited magmatic plagioclase and neoformed anorthoclase have some similar emission bands and their genesis is not marked by cathodoluminescence features. The magmatic K-feldspars (sanidine), have emission bands at around 425, 440, and 490 nm, constituting a strong blue emission (420–500 nm). This emission is weaker in the neoformed K-feldspars that, however, have a strong emission band at around 570 nm. These data show that some cathodoluminescence spectral characteristic can be used to determine the petrogenesis of rock.     

The luminescence of unactivated alkali iodides

Two shorter wave-length emission bands have been observed in activated alkali iodides at — and light excitation apart from activator emission. The shortest wave-length band, observed only at low temperatures, is excited in exciton absorption bands and it may be due to exciton emission.This emission has greater intensity in unactivated crystals grown from the solution. We have observed this emission on CsI, KI and RbI crystals.The intermediate emission band is excited in a narrow excitation band, situated on the sharp slope of the fundamental absorption in crystals and it can apparently be ascribed to structural defects.We wish to thank M. D. Galanin for interest in this work and L. M. amovski for providing us with crystals.     

Characterization of N-doped ZnO layers grown on (0 0 0 1) GaN/Al2O3 substrates by molecular beam epitaxy

We investigated the optical properties and electrical properties of N-doped ZnO layers grown on (0 0 0 1) GaN/Al₂O₃ substrates by molecular beam epitaxy, employing 10 K photoluminescence (PL) measurements, current–voltage (IV) measurements, capacitance–voltage (CV) measurements, and 100 K photocapacitance (PHCAP) measurements. 10 K PL spectra showed that excitonic emission is dominant in N-doped ZnO layers grown after O-plasma exposure, while overall PL emission intensity is significantly reduced and deep level emission at around 2.0 2.2 eV is dominant in N-doped ZnO layers grown after Zn exposure. IV and CV measurements showed that N-doped ZnO layers grown after Zn exposure have better Schottky diode characteristics than O-plasma exposed samples, and an N-doped ZnO layer grown at 300 °C after Zn exposure has best Schottky diode characteristics. This phenomenon is presumably due to lowered background electron concentration induced by the incorporation of N. PHCAP measurements for the N-doped ZnO layer revealed several midgap trap centers at 1.2 1.8 eV below conduction band minimum.     

GaP低阻欧姆接触层的AES和SIMS分析

本文用AES和SIMS分析讨论了p-GaP与三层金属膜Pd/Zn/Pd形成良好欧姆接触层的性质.     

Spin-resolved photoemission from epitaxial Au layers on Pt(111): Coverage dependence of the bandstructure and evidence of surface resonances

Au/Pt(111) has been studied by spin-, angle- and energy-resolved photoemission with normal incident circularly polarized synchrotron radiation of BESSY and normal photoelectron emission for different Au coverages. The prepared layers were characterized by LEED and Augerelectron spectroscopy and turned out to grow up two dimensional and epitaxially. In the photoemission experiments the development of the 3-dimensional bandstructure in the -direction could be observed. For a coverage of 2.6 layers the highest occupied spin-orbit split bands are located at about 0.6 eV lower binding energy than the corresponding bands for a 3D-Au crystal and show dispersion which is, however, weaker than in a 3D-Au crystal. A 5 layer Au adsorbate was found to have already the same dispersion and energetic location as a Au(111)-crystal. For thick gold layers, which behave in photoemission like Au(111)-crystals, we find structures that cannot be due to direct transitions into a free electron like final band. The coverage dependence and spin polarization of these structures show that some of them are due to surface resonances, while the origin of one strong peak could not yet be explained conclusively. In addition we find strong hybridization and two avoided crossings in the occupied part of the bandstructure.     

Eigenresonance states in the Kronig-Penney model

We investigate a sandwich of three layer systems with Dirac -functions in the Kronig-Penney model. The inner system ofN=5 atomic layers is enclosed by the two outer systems with different potential strength. The numberM of the atomic layers in the outer system is varied betweenM=9 and infinity, whereas the numberN of the inner layers is held fixed. We obtain the transmission coefficient for the finite system in the region of scattering energies (E>0). An alternating set of transmission gaps, transmission bands and bands of eigenresonance states is obtained. The normalizable eigenresonances occur (forM going to infinity), if a transmission band of the inner system overlaps a transmission gap of the outer systems. The reason for obtaining solutions of standing waves in the band of eigenresonances is the rapid change of the wave phase of a traveling wave, which occurs in a transmission band of the inner system.     

Study of superdeformed bands in nuclei withA ∼ 150 by heavy-ion-γ coincidences

Superdeformed (SD) bands in¹⁵²Dy,¹⁵¹Dy and¹⁵¹Tb have been populated via the 5n, 6n and 5np evaporation channels, respectively, with the³³S+¹²⁴Sn reaction at 160 and 170 MeV bombarding energies. Population intensities are in good agreement with existing data for SD bands in^{151, 152}Dy and SD yrast band in¹⁵¹Tb. The excited twin SD band in¹⁵¹Tb with the same-transitions as the band in¹⁵²Dy is populated about 5 times more strongly than by the 6n evaporation channel. This might be explained in terms of competition between proton and emission out of an intermediate, excited superdeformed configuration of¹⁵²Dy.Dedicated to Prof. Dr. P. Kienle on the occasion of his 60th birthday     

The electronic structure of GaP (110) and Cu-Phthalocyanine overlayers studied by ellipsometry

Ellipsometric spectroscopy in the spectral range 1.4 eV<<4 eV is used to study cleaved GaP (110) surfaces after adsorption of hydrogen and oxygen and after deposition of Cu-Phthalocyanine (CuPc) molecules. The adsorption of gases and of CuPc induces band bending changes which are derived from changes of the optical constants in the space charge layer due to an electric field effect. For the clean surface, furthermore, information is obtained about electronic surface states. CuPc overlayers with thicknesses below one monolayer exhibit an optical absorption which suggests a chemisorption interaction through the macrocyclic-system of the Pc-molecules.     

Unoccupied electronic levels and conduction-band structure of Xe(111) probed by inverse photoemission

Inverse photoemission spectra from Xe(111) crystals grown on an Ag(111) substrate show features which are interpreted in terms of density-of-states emission from the conduction bands of Xe along the-L direction. The energies of critical points determined by this method show good agreement with recent spin-polarised photoemission band mapping. A peak which is located in the fundamental band gap is tentatively assigned to surface emission, on the basis of an experiment in which this peak is quenched by covering the Xe crystal with one monolayer of krypton.     

Investigating the formation of an adduct of formamide with dioxane by means of Raman spectroscopy

Raman experiments of formamide (FA) and p‐dioxane (DX) mixtures at different compositions were carried out. A red shift of the C O stretching band of DX was observed upon dilution, while blue shifts were observed for the C H stretching and C O C bending bands. In this latter region, the new band at ∼441 cm⁻¹, whose intensity shows large dependence on the FA concentration, has been assigned to an FA–DX adduct and it is reported for the first time in the literature. The spectral changes observed in the C O C bending region allowed to determine a proportion of 4:1 FA–DX and this experimental evidence is also presented for the first time by Raman spectroscopy. The present work shows an excellent agreement with our previous investigation, where the 2:1 FA—THF (tetrahydrofuran) adduct was characterized. Copyright © 2008 John Wiley & Sons, Ltd.     

Effect of pressure on the intensity of absorption bands in the IR spectra of compacted polyethylene powde

The investigation of the IR spectra of compacted reactor powders of ultra-high-molecular-weight polyethylene showed that the intensities of the absorption bands depend on the compaction pressure; namely, they decrease with increasing pressure. It is found that the ultimate pressure above which the absorption band intensity ceases to decrease depends on the spectral position of the band; the shorter the wavelength, the higher the ultimate pressure. This pressure is 5–10 MPa for bands in the long-wavelength spectral region (the band at 720 cm^?1) and 100 MPa for the short-wavelength region (the band at 5875 cm^?1). It is assumed that this phenomenon is related to a change in the size of pores d with pressing. Beams with wavelengths λ < d will undergo multiple diffuse reflections and reach a photodetector that is weaker than beams with λ > d. With increasing pressure, the size of pores decreases and the boundary between the two regions of the spectra shifts to short wavelengths.