Properties and structural state of the surface layer in a zirconium alloy modified by a pulsed electron beam and saturated by hydrogen

A pulsed action of an electron beam on a Zr-1% Nb zirconium alloy is studied. Alloy samples are irradiated by three 50-μs pulses at an energy density of 15–25 J/cm², a power of (3–6) × 10⁴ W/cm², a current density of 10–50 A/cm², and an electron energy of 18 keV. This method of processing is found to modify the surface layer of the alloy without changing the structure-phase state of its volume. This surface modification increases the hydrogen saturation resistance of the alloy.     

Structural phase changes in a titanium-silicon system modified by high-current electron beams and compression plasma flows

Structural phase changes in a titanium-silicon system treated by low-energy high-current electron beams (HCEBs) and compression plasma flows (CPFs) with the duration 100 μs and the energy density 12–15 J/cm² are studied. Scanning electron microscopy, X-ray diffraction and electron microprobe analysis are used in this work. The formation of a titanium-doped silicon layer 10–25 μm thick, titanium silicides (TiSi₂ under HCEBs and Ti₅Si₃ under CPF treatment), silicon dendrites, and needle-like eutectics (typical size of precipitates is about 50 nm) is revealed. It is shown via the results of numerical simulation that the thickness of the metal-doped layer is mainly controlled by the power density value and the surface nonuniformity of the heat flow over the target surface. The thermodynamic regularities of phase formation are discussed, taking into account heat transfer between the silicide nuclei and solid silicon.     

Phase formation and structural changes in the chromium-silicon system exposed to compressed plasma fluxes

The results of the study of structural and phase transformations in the silicon substrate-chromium coating system exposed to compression plasma fluxes with power densities of 0.3–1.2 GW/m² are discussed. The formation of hexagonal chromium disilicide and an amorphous phase, the growth of silicon dendrites, and the appearance of a chromium-enriched near-surface layer are revealed effects. The mechanisms of structural and phase transformations caused by rapid cooling of a mixed melt and concentration overcooling during solidification are analyzed.     

Optical properties of silicon-silicide nanoheterostructures grown by consecutive plasma-epitaxy synthesis

Consecutive plasma-epitaxial synthesis on silicon wafers is used for the first time to fabricate monolithic nanoheterostructures with embedded nanocrystals (NC) of chromium disilicide (Si–NC CrSi₂–Si). It is found that, initially, nanoislands form on the surface and within a coating layer of silicon, followed by the formation of small (10–15 nm) nanocrystals of semiconducting chromium disilicide (CrSi₂) at a high occupation density ((2–3)⋅10¹¹ cm^–2). During formation of silicon-silicide-silicon heterostructures, CrSi₂ nanocrystallites “float up” into the near surface area of the covering silicon layer.     

Paramagnetic properties of single-crystal silicon implanted with iron-group transition metals

Samples of single-crystal silicon implanted with iron-group ions are investigated by electron paramagnetic resonance (EPR). The change in relative permittivity μ_r of the silicon layer modified by implanted nickel ions is found. The accumulation kinetics of paramagnetic centers of amorphous regions of silicon implanted with Co, Ni, and Fe are shown to be different. Magnetic hysteresis for both the wide EPR line due to implanted impurities and the EPR line due to dangling chemical silicon bonds is found. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 197–201, March–April, 2008.     

Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO₂ intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×10⁶ W/cm². Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm² via the SiO₂ intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10^-5 S/cm to 0.3 S/cm for 7×10¹⁷-cm^-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×10¹⁷ cm^-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×10¹⁷ cm^-3. Received: 3 April 2001 / Accepted: 9 April 2001 / Published online: 25 July 2001     

Immobilization of luminescent nanosilicon in a microfine polytetrafluoroethylene matrix by means of supercritical carbon dioxide

With the use of supercritical carbon dioxide (SC-CO₂), the matrix immobilization of photoluminescent silicon nanocrystals (nc-Si) in polytetrafluoroethylene microparticles (mp-PTFE) is performed, which leads to the formation of mp-PTFE/nc-Si photoluminescent nanocomposite containing ∼10³–10⁴ nc-Si particles per mp-PTFE particle (1–2 μm in size). This approach is based on the effect of polymer swelling in SC-CO₂, efficient SC-CO₂-assisted transport of nanoparticles into the internal free volume of the polymer, and contraction of the nanocomposite after the release of CO₂, an effect that prevents the subsequent agglutination of nanoparticles. Particles of nc-Si photoluminescent in the visible spectrum were synthesized from silicon suboxide powder (SiO _x , x ≈ 1) heated at various temperatures within 25–950°C and then etched in concentrated hydrofluoric acid. The hydrosilylation procedure was used to graft 1-octadecene molecules to the surface of nc-Si particles. As a result, the photoluminescence intensity of nc-Si increased substantially. According to TEM images and small angle X-ray scattering data, the maximum size of nc-Si particles did not exceed 5 nm and 7 nm, respectively, and the core of these nanoparticles consisted of crystalline silicon. The structure and spectral properties of the initial nc-Si particles and synthesized mp-PTFE/nc-Si photoluminescent nanocomposite microparticles were studied.     

Structure,transport and field-emission properties of compound nanotubes: CN<Subscript>x</Subscript> vs. BNC<Subscript>x</Subscript> (<Emphasis Type="Italic">x</Emphasis><0.1)

Transport and field-emission properties of as-synthesized CN_x and BNC_x (x<0.1) multi-walled nanotubes were compared in detail. Individual ropes made of these nanotubes and macrofilms of those were tested. Before measurements, the nanotubes were thoroughly characterized using high-resolution and energy-filtered electron microscopy, electron diffraction and electron-energy-loss spectroscopy. Individual ropes composed of dozens of CN_x nanotubes displayed well-defined metallic behavior and low resistivities of ∼10–100 kΩ or less at room temperature, whereas those made of BNC_x nanotubes exhibited semiconducting properties and high resistivities of ∼50–300 MΩ. Both types of ropes revealed good field-emission properties with emitting currents per rope reaching ∼4 μA(CN_x) and ∼2 μA (BNC_x), albeit the latter ropes se- verely deteriorated during the field emission. Macrofilms made of randomly oriented CN_x or BNC_x nanotubes displayed low and similar turn-on fields of ∼2–3 V/μm. 3 mA/cm² (BNC_x) and 5.5 mA/cm² (CN_x) current densities were reached at 5.5 V/μm macroscopic fields. At a current density of 0.2–0.4 mA/cm² both types of compound nanotubes exhibited equally good emission stability over tens of minutes; by contrast, on increasing the current density to 0.2–0.4 A/cm², only CN_x films continued to emit steadily, while the field emission from BNC_x nanotube films was prone to fast degradation within several tens of seconds, likely due to arcing and/or resistive heating. Received: 29 October 2002 / Accepted: 1 November 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Sheath and electron density dynamics in the normal and self-pulsing regime of a micro hollow cathode discharge in argon gas

A microplasma is generated in the microhole (400 μm diameter) of a molybdenum-alumina-molybdenum sandwich (MHCD type) at medium pressure (30–200 Torr) in pure argon. Imaging and emission spectroscopy have been used to study the sheath and electron density dynamics during the stationary normal regime and the self-pulsing regime. Firstly, the evolution of the microdischarge structure is studied by recording the emission intensity of the Ar (5p[3/2]₁–4s[3/2]₁)_{1}) line at 427.217 nm, and Ar⁺ (4p′ ²P_3/2–4s′ ²D_5/2)_{5/2}) line at 427.752 nm. The maximum of the Ar⁺ line is located in the vicinity of the sheath-plasma edge. In both regimes, the experimental observations are consistent with the position of the sheath edge calculated with an ionizing sheath model. Secondly, the electron density is recorded by monitoring the Stark broadening of the H_b_\beta-line. In the self-pulsing regime at 150 Torr, the electron density reaches its maximum value of 4 × 10¹⁵ cm^-3, a few tens of ns later than the discharge current maximum. The electron density then decays with a characteristic decay time of about 2 μs, while the discharge current vanishes twice faster. The electron density in the steady-state regime is two orders of magnitude lower, at about 6–8 × 10¹³ cm^-3.     

Low contact resistance of n+-Si/Ti/WNx/Al submicron contact structures

+ -Si/Ti/WN_x/Al multi-layer metallization scheme. The contact resistance has been strongly related to the plasma nitridation of the Ti surface because the contact resistance of n⁺-Si/Ti/WN_x/Al with contact size of 0.49 μm² about 100–130 Ω, whereas without the nitridation of the Ti surface the contact resistance rises up to 200–390 Ω. ¹⁹F (p,αγ) nuclear resonance analysis and Auger electron spectroscopy reveal that F adatoms on the Ti surface are successfully removed by the 30 s nitridation and as a result, the low contact resistance can be achieved. Received: 16 July 1996/Accepted: 5 November 1996     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

Picosecond laser ablation of SiO2 layers on silicon substrates

In this work, we report on laser ablation of thermally grown SiO₂ layers from silicon wafer substrates, employing an 8–9 ps laser, at 1064 (IR), 532 (VIS) and 355 nm (UV) wavelengths. High-intensity short-pulse laser radiation allows direct absorption in materials with bandgaps higher than the photon energy. However, our experiments show that in the intensity range of our laser pulses (peak intensities of <2×10¹² W/cm²) the removal of the SiO₂ layer from silicon wafers does not occur by direct absorption in the SiO₂ layer. Instead, we find that the layer is removed by a “lift off” mechanism, actuated by the melting and vaporisation of the absorbing silicon substrate. Furthermore, we find that exceeding the Si melting threshold is not sufficient to remove the SiO₂ layer. A second threshold exists for breaking of the layer caused by sufficient vapour pressure. For SiO₂ layer ablation, we determine layer thickness dependent minimum fluences of 0.7–1.2 J/cm² for IR, 0.1–0.35 J/cm² for VIS and 0.2–0.4 J/cm² for UV wavelength. After correcting the fluences by the reflected laser power, we show that, in contrast to the melting threshold, the threshold for breaking the layer depends on the SiO₂ thickness.     

One-pot fabrication and enhanced thermoelectric properties of poly(3,4-ethylenedioxythiophene)-Bi<Subscript>2</Subscript>S<Subscript>3</Subscript> nanocomposites

Bi₂S₃ nanotubes and de-doped poly(3,4-ethylenedioxythiophene) (PEDOT) composite nanopowders were synchronously synthesized by a one-pot self-assembly method. The powders were characterized by X-ray powder diffraction, infrared spectroscopy, and transmission electron microscopy, respectively. Thermoelectric properties of the Bi₂S₃–PEDOT composite nanopowders with different Bi₂S₃ contents after being cold pressed into pellets were measured at room temperature. The sample with 36.1 wt% Bi₂S₃ has a highest power factor of 2.3 μWm⁻¹K⁻², which is higher than that of both pure PEDOT (0.445 μWm⁻¹K⁻²) and Bi₂S₃ (1.94 μWm⁻¹K⁻²).     

Spectroscopic characteristics of erbiumand ytterbium-activated laser media

Judd–Ofelt parameters (Ω₂ = 5.09∙10^–20, Ω₄ = 0.92∙10^–20, and Ω₆ = 0.63∙10^–20 cm²) and oscillator strengths of fundamental optical transitions involved in lasing at wavelength 1.54 μm have been calculated for borosilicophosphate glass co-activated with Er³⁺ and Tb³⁺ ions based on experimental luminescence and absorption spectra and refractive indices. The results were used to determine the emission (6∙10^–23 cm²) and absorption (5∙10^–21 cm²) cross sections for λ = 1.54 μm and the gain cross section as a function of inverse population levels.     

Laser-induced cavities and solitons in overcritical hydrogen plasma

A picosecond CO₂ laser was used successfully in a number of experiments exploring advanced methods of particle acceleration [1]. Proton acceleration from gas-jet plasma exemplifies another advantage of employing the increase in laser wavelength from the optical to the mid-IR region. Recent theoretical- and experimental-studies of ion acceleration from laser-generated plasma point to better ways to control the ion beam’s energy when plasma approaches the critical density. Studying this regime with solid-state lasers is problematic due to the dearth of plasma sources at the critical electron density ∼10²¹ cm⁻³, corresponding to laser wavelength λ = 1 μm. CO₂ laser offers a solution. The CO₂ laser’s 10 μm wavelength shifts the critical plasma density to 10¹⁹ cm⁻³, a value attainable with gas jets. Capitalizing on this approach, we focused a circular polarized 1-TW CO₂ laser beam onto a hydrogen gas jet and observed a monoenergetic proton beam in the 1–2 MeV range. Simultaneously, we optically probed the laser/plasma interaction region with visible light, revealing holes bored by radiation pressure, as well as quasi-stationary soliton-like plasma formations. Our findings from 2D PIC simulations agree with experimental results and aid in their interpretation.     

Pulsed electron-beam melting of a copper — steel 316 system: Evolution of the chemical composition,microstructure, and properties

The surface topography, chemical composition, microstructure, nanohardness, and tribological characteristics of a Cu (film, 512 nm)-stainless steel 316 (substrate) system subjected to pulsed melting by a low-energy (20–30 keV), high-current electron beam (2–3 μs, 2–10 J/cm²) were investigated. The film was deposited by sputtering a Cu target in the plasma of a microwave discharge in argon. To prevent local exfoliation of the film due to cratering, the substrate was multiply pre-irradiated with 8–10 J/cm². On single irradiation, the bulk of the film survived, and a diffusion layer containing the film and substrate components was formed at the interface. The thickness of this layer was 120–170 nm irrespective of the energy density. The diffusion layer consisted of subgrains of γ-Fe solid solution and nanosized particles of copper. In the surface layer of thickness 0.5–1 μm, which included the copper film quenched from melt and the diffusion layer, the nanohardness and the wear resistance nonmonotonicly varied with energy density, reaching, respectively, a maximum and a minimum in the range 4.3–6.3 J/cm². As the number of pulsed melting cycles was increased to five in the same energy density range, there occurred mixing of the film-substrate system and a surface layer of thickness ∼2 μm was formed which contained ∼20 at. % copper. Displacement of the excess copper during crystallization resulted in the formation of two-phase nanocrystal interlayers separating the γ-phase grains. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 6–13, December, 2005.     

Crystallization of a dusty plasma in the positive column of a glow discharge

The formation of macroscopic ordered structures in the standing striations of a stationary glow discharge in Ne is observed. A Coulomb quasicrystal is formed by spherical glass particles with diameters of 50–63 μm and charge Z _p~7·10⁵ e. The interparticle distance is approximately 300 μm. This corresponds to a nonideality parameter Γ~5·10⁴, which leads to crystallization in the Yukawa model. The factors leading to the formation of a quasicrystal in the striations are discussed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 2, 86–91 (25 July 1996)     

Microstructure, microhardness, composition, and corrosive properties of stainless steel 304 I. Laser surface alloying with silicon by beam-oscillating method.

Laser surface alloying (LSA) with silicon was conducted on austenitic stainless steel 304. Silicon slurry composed of silicon particle of 5 μm in average diameter was made and a uniform layer was supplied on the substrate stainless steel. The surface was melted with beam-oscillated carbon dioxide laser and then LSA layers of 0.4–1.2 mm in thickness were obtained. When an impinged energy density was adjusted to be equal to or lower than 100 W mm⁻², LSA layers retained rapidly solidified microstructure with dispersed cracks. In these samples, Fe₃Si was detected and the concentration of Si in LSA layer was estimated to be 10.5 wt.% maximum. When the energy density was equal to or greater than 147 W mm⁻², cellular grained structure with no crack was formed. No iron silicate was observed and alpha iron content in LSA layers increased. Si concentration within LSA layers was estimated to be 5 to 9 wt.% on average. Crack-free as-deposited samples exhibited no distinct corrosion resistance. The segregation of Si was confirmed along the grain boundaries and inside the grains. The microstructure of these samples changed with solution-annealing and the corrosion resistance was fairly improved with the time period of solution-annealing. Received: 2 September 1999 / Accepted: 6 September 1999 / Published online: 1 March 2000     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Electron microscopy investigation of AlMg6 aluminum alloy surface defects caused by microorganisms extracted in space stations

The surfaces of AMg6 (aluminum-magnesium) alloy samples that have passed accelerated biocorrosion tests have been investigated in a Quanta-3D scanning electron microscope. The alloy samples have been treated with the Ulocladium botrytis Preuss fungus, which is an active destructive fungus and was previously extracted on surfaces of the International Space Station. Biocorrosion pits 2–10 μm in diameter, cavities the depths of which can reach 70–250 μm depth, and spots of modified color are found to be the most typical defects. The surfaces of large cavities consist of faceted cubic particles that are formed when the acid products of fungus metabolism interact with the alloy surface. The particles have an average size of 30 μm, which is close to the size of alloy grains. The microstructure of a biocorrosion layer has been investigated in a Quanta-3D microscope with the use of a focused Ga⁺ ion beam. The samples of 12-μm-wide transverse slices are obtained near large cavities and investigated in a Tecnai G₂₃0ST transmission electron microscope. The X-ray microanalysis of the defective layer has revealed the high concentration of oxygen in this layer. Obtained images indicate that the corrosion cavity surface has a complex porous structure.