Calibration of CR-39 with atomic force microscope for the measurement of short range tracks from proton-induced target fragmentation reactions

We studied the track response of CR-39 plastic nuclear track detectors (PNTD) for low (<6 MeV/n) and high (>100 MeV/n) energy heavy ions using the atomic force microscope (AFM). CR-39 PNTD was exposed to several heavy ion beams of different energy at HIMAC (Heavy Ion Medical Accelerator in Chiba). For AFM measurement, the amount of bulk etch was controlled to be ∼2 μm in order to avoid etching away of short range tracks. The response data obtained by AFM for ∼2 μm bulk etch was in good agreement with data obtained by the conventional optical microscope analysis for larger bulk etch. The response data from low energy beams (stopping near the surface) was also consistent with the data from high energy beams (penetrating the detector) as a function of REL (restricted energy loss) with the δ-ray cut off energy of ω₀ = 200 eV. We experimentally verified that REL (ω₀ = 200 eV) gives a universal function for wide energy range in CR-39 PNTD. This work has been done as part of a basic study in the measurement of secondary short range tracks produced by target fragmentation reactions in proton cancer therapy fields.     

Conversion between different forms of LET

Measurement of linear energy transfer (LET) spectra by detectors such as CR-39 PNTD or Si diodes for purposes of determining dose and dose equivalent in tissue often requires the conversion of LET as measured in the detector medium (e.g. LET₂₀₀CR-39 or LET_∞Si) to LET in water (LET_∞H₂O). Traditionally this conversion is carried out by multiplying values of LET in the form measured by a single numerical constant. Here we present an alternative conversion method wherein the single constant is replaced by a mathematical function obtained from a least squares fit of LET values for heavy ions of Z ranging from 1 to 54 over an energy interval ranging from 0.8 to 2000 MeV/amu. For conversion of LET₂₀₀CR-39 to LET_∞H₂O in units of keV/μm, a fitted function of Log(LET_∞H₂O) = 0.1689 + 0.984Log(LET₂₀₀CR-39) was obtained. For conversion of LET_∞Si to LET_∞H₂O, a fitted function of Log(LET_∞H₂O) = ?0.2902 + 1.025Log(LET_∞Si) was obtained.     

Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas

We studied nonselective, vertical dry etching of GaAs and AlGaAs/GaAs structure in high pressure capacitively coupled BCl₃/N₂ plasmas. The operating pressure was fixed at 150 m Torr. We found that there was an optimized process condition for nonselective and vertical etching of GaAs and AlGaAs/GaAs at the relatively high pressure. It was noted that there was a range of % N₂ (i.e. 20–40%) where nonselective etching of GaAs over AlGaAs could be achieved in the BCl₃/N₂ mixed plasma. We also found that dry etching of GaAs and AlGaAs/GaAs structure provided quite vertical and smooth surface when % N₂ was in the range of 0–20% in the BCl₃/N₂ plasma. The maximum etch rates for GaAs (0.41 μm/min) and AlGaAs/GaAs structure (0.42 μm/min) were obtained with 20–30% N₂ composition in the plasma.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

AFM measurement of atomic-scale Si surface etching by active oxidation

Atomic-scale etching of a clean Si surface by active oxidation with oxygen molecules was examined using ex-situ atomic force microscopy (AFM). The etch rate was directly determined by measuring the etch depth with AFM. A SiO₂ anti-etching mask was used on a H-terminated Si(001)-2 × 1:H surface prepared by low pH HF treatment followed by annealing in H₂. The etch rate under active oxidation conditions was almost proportional to the O₂ pressure, which was consistent with previous reports. The etch rate exhibited a weak temperature dependence with an apparent activation energy of 0.2 eV. A distinct transition of the reaction mode from etching to oxide formation was observed in detail as an abrupt decrease of the etch rate by lowering the temperature near the boundary condition between the etching and oxide formation conditions.     

Effect of grating on IR LED device performance

The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

The fabrication of aspherical microlenses using focused ion-beam techniques

Aspheric lenses are the most common method for correcting for spherical aberrations but, in microlens production, highly-controlled lens profiles are hard to achieve. We demonstrate a technique for creating bespoke, highly-accurate aspheric or spherical profile silicon microlens moulds, of almost any footprint, using focused ion-beam milling. Along with this, we present a method of removing induced ion-beam damage in silicon, via a hydrofluoric acid etch, helping to recover the surface's optical and chemical properties.In this paper, we demonstrate that our milled and etched moulds have a roughness of 4.0–4.1 nm, meaning they scatter less than 1% of light, down to wavelengths of 51 nm, showing that the moulds are suitable to make lenses that are able to handle light from UV up to infra-red.Using empirical experiments and computer simulations, we show that increasing the ion-dose when milling increases the amount of gallium a hydrofluoric acid etch can remove, by increasing the degree of amorphisation within the surface. For doses above 3000 μC/cm² this restores previous surface properties, reducing adhesion to the mould, allowing for a cleaner release and enabling higher quality lenses to be made.Our technique is used to make aspheric microlenses of down to 3 μm in size, but with a potential to make lenses smaller than 1 μm.     

Porous silicon based extended-bandwidth rugate filters for mid-infrared application

Porous silicon-based rugate filters operating in the mid-infrared spectral range are fabricated by electrochemical etching of bulk silicon wafers. The rugate filter has a high reflectivity stop-band at 5 μm with no higher-order harmonics and very small sidelobes. Furthermore, broadband high pass filter having the cutoff wavelength in a mid-infrared range is demonstrated by combining five rugate structures.     

AFM characterization of bovine enamel and dentine after acid-etching

Teeth are constituted mainly of hydroxyapatite molecules (Ca₁₀(PO₄)₆(OH)₂), grouped in different microstructural arrangements, depending on the dental layer considered (enamel or dentine). In the present work, these dental microstructural arrangements were characterized by atomic force microscopy. Enamel and dentine samples were cut from freshly extracted bovine incisor teeth. After metallographic polishing, the dental surfaces were etched with lactic acid (113.8 mmol/L, pH 3.3). Three etching times were tested: 1, 3 and 5 min. Atomic force micrographs showed that 1 min of etching time was effective to remove the smear layer, polishing debris and scratches, and display the characteristics of interest for both enamel and dentine. Although the bovine dental enamel rod cross-section presented keyhole-like shape, its measured dimensions (8.8 μm of major axis and 3.7 μm of minor axis) exhibited an insignificant discrepancy from human prisms diameters. Bovine dentinal tubules displayed larger mean diameters (4.0 μm) and a lower density (～17,100 tubules/mm²) than human dentine, suggesting that the use of bovine dentine as a substitute for human dentine in resin adhesion investigations should be reconsidered. Apatite nanoparticles presented a mean radius (22–23 nm) considerably smaller than that of human teeth.     

Preparation of micro-foils for TEM/STEM analysis from metallic powders

A technique has been developed which facilitates the preparation of electro-polished micro-foil transmission electron microscopy (TEM) specimens, which have previously been machined out of ≈100 μm diameter metallic powder particles using a Focussed Ion Beam (FIB) instrument. The technique can be used to create small volume TEM specimens from most metallic powder particles and bulk metal samples. This is especially useful when the matrices are ferritic steels, which are often difficult to image in the electron microscope, since the necessary aberration corrections change as the sample is tilted in the magnetic field of the objective lens.Small samples, such as powder particles, were attached to gold support grids using deposited platinum and were then ion milled to approximately 2 μm thickness in a focussed ion beam (FIB) instrument. Subsequently, the specimen assemblies were electropolished for short durations under standard conditions, to produce large (5 μm × 5 μm) electron transparent regions of material. The specimens produced by this technique were free from FIB related artefacts and facilitated atomic resolution scanning-TEM (STEM) imaging of ferritic and nickel matrices containing, for example, yttrium rich oxide nano-dispersoids.     

InAs/GaSb superlattice infrared detectors

Future heterojunction InAs/GaSb superlattice (SL) detector devices in the long-wavelength infrared regime (LWIR, 8–12 μm) require an accurate bandstructure model and a successful surface passivation. In this study, we have validated the superlattice empirical pseudopotential method developed by Dente and Tilton over a wide range of bandgap energies. Furthermore, dark current data for a novel dielectric surface passivation for LWIR devices is presented. Next, we present a technique for high-resolution, full-wafer mapping of etch pit densities on commercial (1 0 0) GaSb substrates, which allows to study the local correlation between threading dislocations in the substrate and the electro-optical pixel performance. Finally, recent performance data for 384 × 288 dual-color InAs/GaSb superlattice imagers for the mid-wavelength infrared (MWR, 3–5 μm) is given.     

A high energy component of the intense laser-accelerated proton beams detected by stacked CR-39

A precise measurement has been made utilizing a stacked CR-39 detectors unit for laser-accelerated high intensity protons. The proton beams are derived from a thin polyimide target exposed to an high intense Ti:sapphire laser 8 J energy and 40 fs duration. The sample sets, stacked radiochromic film and CR-39 detectors covered with 13 μm aluminum filter, are irradiated under vacuum condition. By analyzing the etch pits on the last layer of CR-39 which recorded etchable tracks, the energies of each proton in high-energy region are evaluated more precisely than in the past. The residual ranges for each particle in the last layer has been obtained from etch pit growth curves with multi-step etching technique. The maximum energy of proton is 14.39 ± 0.05 MeV. This method allows us to measure the maximum energy of proton precisely, which can obtain high energy resolution with uncertainty ΔE = 0.1 MeV in the laser-driven particle acceleration experiment.     

Magnetically actuated bi-directional microactuators with permalloy and Fe/Pt hard magnet

Bi-directional polyimide (PI) electromagnetic microactuator with different geometries are designed, fabricated and tested. Fabrication of the electromagnetic microactuator consists of 10 μm thick Ni/Fe (80/20) permalloy deposition on the PI diaphragm by electroplating, high aspect ratio electroplating of copper planar coil with 10 μm in thickness, bulk micromachining, and excimer laser selective ablation. They were fabricated by a novel concept avoiding the etching selectivity and residual stress problems during wafer etching. A mathematical model is created by ANSYS software to analyze the microactuator. The external magnetic field intensity (H_ext) generated by the planar coil is simulated by ANSYS software. ANSYS software is used to predict the deflection angle of the microactuator. Besides, to provide bi-directional and large deflection angle of microactuator, hard magnet Fe/Pt is deposited at a low temperature of 300 °C by sputtering onto the PI diaphragm to produce a perpendicular magnetic anisotropic field. This magnetic field can enhance the interaction with H_ext to induce attractive and repulsive bi-directional force to provide large displacement. The results of magnetic microactuator with and without hard magnets are compared and discussed. The preliminary result reveals that the electromagnetic microactuator with hard magnet shows a greater deflection angle than that without one.     

Incident angle and temperature dependence of WSi wire-grid polarizer

The dependences of the incident angle and thermal durability of a tungsten silicide (WSi) wire-grid polarizer were examined. A WSi grating with a 0.5 fill factor, 260 nm depth, and 400 nm period was formed on a Si surface using two-beam interference and dry etching. The TM transmission spectrum of the fabricated element was greater than 60% at the incident angle of θ = 40° (the angle between the incident direction and the perpendicular axis to the grating direction) in the 4–10 μm wavelength range. An extinction ratio of 22.2 dB was achieved at 2.5 μm wavelength. Additionally, results show that this polarizer has higher thermal resistance than that of commercial infrared polarizers. Therefore, this polarizer is effective for taking a polarized thermal image of high temperatures.     

Development of an efficient coherent optical source at 6.04 μm

Efficiency as high as 26% is obtained for generation of mid-infrared radiation at 6.04 μm by frequency doubling of ammonia laser emission at 12.08 μm in a 15 mm long type-I cut AgGaSe₂ crystal. The NH₃ laser used for this work is optically pumped by a commercial TEA CO₂ laser operating on 9.22 μm and produces pulsed output of ∼210 mJ with a duration of ∼200 ns at 12.08 μm. The generated radiation at 6.04 μm is separated out from the residual radiation at 12.08 μm by exploiting the principle of polarization dependent diffraction of reflection grating.     

Single-photon and three-photon absorption induced whispering-gallery mode lasing in ZnO micronails

The ZnO micronails were synthesized by the vapor phase transport method. The heads of the micronails show hexagonal disk structure which is suitable for the whispering-gallery mode lasing microcavity. Under the excitation of a nanosecond pulse at 355 nm, the single-photon absorption induced lasing was stimulated in the micronail with the head diameter of 3.0 μm, the whispering gallery mode and Fabry-Pérot mode lasing were investigated. Under the excitation of femtosecond laser pulses at 804 nm, the second harmonic generation and the three-photon absorption induced photoluminescence were observed from a bulk of micronails, then an individual micronail with the diameter of 9.1 μm was employed to realize the three-photon absorption induced whispering-gallery mode lasing.     

Fabry–Pérot cavities based on chemical etching for high temperature and strain measurement

In this paper, two hybrid multimode/single mode fiber Fabry–Pérot (FP) cavities were compared. The cavities fabricated by chemical etching are presented as high temperature and strain sensors. In order to produce this FP cavity a single mode fiber was spliced to a graded index multimode fiber with 62.5 μm core diameter. The Fabry–Pérot cavities were tested as a high temperature sensor in the range between room temperature and 700 °C and as strain sensors. A reversible shift of the interferometric peaks with temperature allowed to estimate a sensitivity of 0.75 ± 0.03 pm/°C and 0.98 ± 0.04 pm/°C for the sensor A and B respectively. For strain measurement sensor A demonstrated a sensitivity of 1.85 ± 0.07 pm/μ? and sensor B showed a sensitivity of 3.14 ± 0.05 pm/μ?. The sensors demonstrated the feasibility of low cost fiber optic sensors for high temperature and strain.     

The experimental and simulated LET spectrum and charge spectrum from CR-39 detectors exposed to irons near CRaTER at BNL

Human will be sooner or later return to the moon and will eventually travel to the planets near Earth. Space radiation hazards are an important concern for human space flight in deep space where galactic cosmic rays (GCR) and solar energetic particles are dominated and radiation is much stronger than that in LEO (Low Earth Orbit) because in deep space there is no magnetosphere to screen charged particle and no big planet nearby to shadow the spacecraft.Research indicates that the impact of particle radiation on humans depends strongly on the particles' linear energy transfer (LET) and the radiation risk is dominated by high LET radiation. Therefore, radiation research on high LET should be emphasized and conducted systematically so as to make radiation risk as low as reasonably achievable (ALARA) for astronauts.Radiation around the moon can be measured with silicon detectors and/or CR-39 plastic nuclear track detectors (PNTDs). At present stage the silicon detectors are one of the preferred active dosimeters which are sensitive to all LET and CR-39 detectors are the preferred passive dosimeters which are sensitive to high LET (≥5 keV/μm water). CR-39 PNTDs can be used as personal dosimeters for astronauts. Both the LET spectrum and the charge spectrum for charged particles in space can be measured with silicon detectors and CR-39 detectors.Calibrations for a detector system combined with the silicon detectors CRaTER (Cosmic Rays Telescope for the Effects of Radiation) from Boston University and Massachusetts Institute of Technology, and the CR-39 PNTDs from JSC (Johnson Space Center) – SRAG (Space Radiation Analysis Group) were conducted by exposing the detector system to the accelerator generated protons and heavy ions. US space mission for the radiation measurement around the moon using CRaTER was carried out in 2009.Results obtained from the calibration exposures indicate an excellent agreement between LET spectrum and charge spectrum measured with CR-39 detectors and simulated with PHITS (Particle and Heavy Ion Transport System).This paper introduces the LET spectrum method and charge spectrum method using CR-39 PNTDs and the Monte Carlo simulation method for CR-39 detectors, presents and compares the results measured with CR-39 PNTDs and simulated for CR-39 detectors exposed to heavy irons (600 MeV/n) in BNL (Brookhaven National Laboratory) in front and behind the CRaTER.     

Study of resonant modes in a 700 nm pitch macroporous silicon photonic crystal

In this study the modes produced by a defect inserted in a macroporous silicon (MP) photonic crystal (PC) have been studied theoretical and experimentally. In particular, the transmitted and reflected spectra have been analyzed for variations in the defect’s length and width. The performed simulations show that the resonant frequency is more easily adjusted for the fabricated samples by length tuning rather than width. The optimum resonance peak results when centered in the PC bandgap. The changes in the defect geometry result in small variations of the optical response of the PC. The resonance frequency is most sensitive to length variations, while the mode linewidth shows greater change with the defect width variation. Several MPS photonic crystals were fabricated by the electrochemical etching (EE) process with optical response in the range of 5.8 μm to 6.5 μm. Results of the characterization are in good agreement with simulations. Further samples were fabricated consisting of ordered modulated pores with a pitch of 700 nm. This allowed to reduce the vertical periodicity and therefore to have the optical response in the range of 4.4 μm to 4.8 μm. To our knowledge, modes working in this range of wavelengths have not been previously reported in 3-d MPS structures. Experimental results match with simulations, showing a linear relationship between the defect’s length and working frequency inside the bandgap. We demonstrate the possibility of tailoring the resonance peak in both ranges of wavelengths, where the principal absorption lines of different gases in the mid infrared are placed. This makes these structures very promising for their application to compact gas sensors.