A new method for characterization of thermal properties of human enamel and dentine: Influence of microstructure

For better selection of “tooth-like” dental restorative materials, it is of great importance to evaluate the thermal properties of the human tooth. A simple method capable of non-destructively characterizing the thermal properties of the individual layers (dentine and enamel) of human tooth is presented. The traditional method of monotonic heating regime was combined with infrared thermography to measure the thermal diffusivities of enamel and dentine layers without physically separating them, with 4.08 (±0.178) × 10⁷ m²/s measured for enamel and 2.01 (±0.050) × 10⁷ m²/s for dentine. Correspondingly, the thermal conductivity was calculated to be 0.81 W/mK (enamel) and 0.48 W/mK (dentine). To examine the dependence of thermal conductivity on the configuration of dentine microstructure (microtubules), the Maxwell-Eucken and Parallel models of effective thermal conductivity are employed. The effective thermal conductivity of dentine in the direction parallel to tubules was found to be about 1.1 times higher than that perpendicular to the tubules, indicating weak anisotropy. By adopting the Series model, the bulk thermal conductivity of enamel and dentine layers is estimated to be 0.57 W/mK.     

Effects of fluoride treatment on phosphoric acid-etching in primary teeth: An AFM observation

The aim of this study was to examine the effect of fluoride application on 37% phosphoric acid-etching by atomic force microscopy (AFM) in primary tooth samples based on a clinical protocol used in a pediatric dental hospital. Enamel samples were prepared from 36 exfoliated and non-carious primary teeth. Primary tooth samples were randomly assigned to one of the four groups based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. Group 1 received no fluoride application, Group 2 was pre-treated with fluoride and then received acid-etching 2 weeks later. One week separated the fluoride treatment and the acid-etching in Group 3, while Group 4 received acid-etching immediately after the fluoride treatment. The vestibular enamel surfaces of each primary tooth sample were scanned in air at a resolution of 512 × 512 pixels and a scan speed of 0.8 line/s. On the enamel surfaces of the primary teeth after APF pre-treatment, debris were observed although the teeth were smoother than they were prior to APF. As a result, it was concluded that APF treatment is responsible for decreased primary tooth surface roughness. The enamel surfaces etched for 20 s showed that acid-etching was effective not only in removing scratches and debris, but also for evaluating enamel rod characteristics. Primary tooth enamel surfaces after etching showed minute structures caused by the decreased hydroxyapatite nanoparticle space, compared to those before etching. Also, acid-etching showed significantly increased roughness effects (p < 0.0001, n = 9). Finally, as more time elapsed after APF pre-treatment, the roughness was decreased to a lesser degree (p = 0.005, n = 9). We suggest that primary teeth etching 2 weeks after APF pre-treatment used clinically in pediatric hospitals may be effective to obtain properly etched enamel surfaces.     

Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 μm width, 1.2 μm height, and 0.8 μm spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9% higher light output power than the conventional LEDs.     

A method for rapid measurement of laser ablation rate of hard dental tissue

The aim of the study reported here is the development of a new method which allows rapid and accurate in-vitro measurements of three-dimensional (3D) shape of laser ablated craters in hard dental tissues and the determination of crater volume, ablation rate and speed. The method is based on the optical triangulation principle. A laser sheet projector illuminates the surface of a tooth, mounted on a linear translation stage. As the tooth is moved by the translation stage a fast digital video camera captures series of images of the illuminated surface. The images are analyzed to determine a 3D model of the surface. Custom software is employed to analyze the 3D model and to determine the volume of the ablated craters. Key characteristics of the method are discussed as well as some practical aspects pertinent to its use. The method has been employed in an in-vitro study to examine the ablation rates and speeds of the two main laser types currently employed in dentistry, Er:YAG and Er,Cr:YSGG. Ten samples of extracted human molar teeth were irradiated with laser pulse energies from 80 mJ to the maximum available energy (970 mJ with the Er:YAG, and 260 mJ with the Er,Cr:YSGG). About 2000 images of each ablated tooth surface have been acquired along a translation range of 10 mm, taking about 10 s and providing close to 1 million surface measurement points. Volumes of 170 ablated craters (half of them in dentine and the other half in enamel) were determined from this data and used to examine the ablated volume per pulse energy and ablation speed. The results show that, under the same conditions, the ablated volume per pulse energy achieved by the Er:YAG laser exceeds that of the Er,Cr:YSGG laser in almost all regimes for dentine and enamel. The maximum Er:YAG laser ablation speeds (1.2 mm³/s in dentine and 0.7 mm³/s in enamel) exceed those obtained by the Er,Cr:YSGG laser (0.39 mm³/s in dentine and 0.12 mm³/s in enamel). Since the presented method proves to be easy to use and allows quite rapid measurements it may become a valuable tool to study the influence of various laser parameters on the outcome of laser ablation of dental tissues.     

Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas

We studied nonselective, vertical dry etching of GaAs and AlGaAs/GaAs structure in high pressure capacitively coupled BCl₃/N₂ plasmas. The operating pressure was fixed at 150 m Torr. We found that there was an optimized process condition for nonselective and vertical etching of GaAs and AlGaAs/GaAs at the relatively high pressure. It was noted that there was a range of % N₂ (i.e. 20–40%) where nonselective etching of GaAs over AlGaAs could be achieved in the BCl₃/N₂ mixed plasma. We also found that dry etching of GaAs and AlGaAs/GaAs structure provided quite vertical and smooth surface when % N₂ was in the range of 0–20% in the BCl₃/N₂ plasma. The maximum etch rates for GaAs (0.41 μm/min) and AlGaAs/GaAs structure (0.42 μm/min) were obtained with 20–30% N₂ composition in the plasma.     

Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

We have demonstrated 384 × 288 pixels mid-wavelength infrared focal plane arrays (FPA) using type II InAs/GaSb superlattice (T2SL) photodetectors with pitch of 25 μm. Two p-i-n T2SL samples were grown by molecular beam epitaxy with both GaAs-like and InSb-like interface. The diode chips were realized by pixel isolation with both dry etching and wet etching method, and passivation with SiN_x layer. The device one with 50% cutoff wavelength of 4.1 μm shows NETD ∼ 18 mK from 77 K to 100 K. The NETD of the other device with 50% cutoff wavelength at 5.6 μm is 10 mK at 77 K. Finally, the T2SL FPA shows high quality imaging capability at the temperature ranging from 80 K to 100 K which demonstrates the devices’ good temperature performance.     

Compact WDM demultiplexer for seven channels in photonic crystal

We demonstrate a new device concept for wavelength division demultiplexing based on planar photonic crystal waveguides. The filtering of wavelength channels is realized by shifting the cutoff frequency of the fundamental photonic bandgap mode in consecutive sections of the waveguide. The shift is realized by modifying the size of the border holes.The proposed demultiplexer has an area equal to (16.5 μm × 6.5 μm) and thus it is verified that this structure is very small and can be integrated easily into optical integrated circuits with nanophotonic technologies. The output wavelengths of designed structure can be tuned for communication applications, around 1550 nm. The wavelengths of demultiplexer channels are λ₁ = 1.590 μm, λ₂ = 1.566 μm, λ₃ = 1.525 μm, λ₄ = 1.510 μm, λ₅ = 1.484 μm, λ₆ = 1.450 μm, λ₇ = 1.400 μm respectively. Designs offering improvement of number of the separate wavelengths (seven), miniaturization of the structure (107.25 μm²) is our aim in this work.In our structure, we consider that the 2D triangular lattice photonic crystal is composed of air holes surrounded by dielectric. Its parameters are: radius of holes (r = 0.130 μm), lattice constant (a = 0.380 μm), and index of membrane (n = 3.181:InP). The numerical model used to simulate the structure of the demultiplexer is based on the finite difference time domain (FDTD).     

Micro-solid oxide fuel cell using thick-film ceria

A fabrication method that does not use lithography or etching processes for thick-film based micro-SOFCs (Solid Oxide Fuel Cells) was described and discussed. In this study, a new type of micro-SOFC was fabricated using a free-standing thick-film electrolyte with ~ 20 μm thickness. This structure has the advantages of both electrolyte-support and electrode-support type SOFCs. Generally, the electrolyte should be thicker than e.g., ~ 150 μm since a thinner electrolyte easily cracks in a self-supporting mode during the fabrication procedure. Thus, a new mounting method was developed in order to use a thin-electrolyte film. In this study, a ~ 20 μm-thick GDC (Gd-doped ceria) electrolyte film was successfully mounted on a ~ 400 μm-thick GDC ring by sintering these two pieces together. Ni-GDC and Sm_0.5Sr_0.5CoO₃ were brush painted as an anode and a cathode, respectively. With this new configuration, it was possible to construct an electrolyte-supported SOFC using a thick-film ceria-based electrolyte and measure the power density. The open-circuit voltage (OCV) of the cell in 97%H₂ + 3%H₂O/air was ~ 0.87 V and the maximum power density was ~ 270 mW/cm² at 600 °C. The result shows that the high performance is achievable for the micro-SOFCs using a thick-film ceria-electrolyte operating at 600 °C.     

Development of an efficient coherent optical source at 6.04 μm

Efficiency as high as 26% is obtained for generation of mid-infrared radiation at 6.04 μm by frequency doubling of ammonia laser emission at 12.08 μm in a 15 mm long type-I cut AgGaSe₂ crystal. The NH₃ laser used for this work is optically pumped by a commercial TEA CO₂ laser operating on 9.22 μm and produces pulsed output of ∼210 mJ with a duration of ∼200 ns at 12.08 μm. The generated radiation at 6.04 μm is separated out from the residual radiation at 12.08 μm by exploiting the principle of polarization dependent diffraction of reflection grating.     

Characterization of photonic nanojets in dielectric microdisks

The direct imaging of photonic nanojets in different dielectric microdisks illuminated by a laser source is reported. The SiO₂ and Si₃N₄ microdisks are of height 650 nm with diameters ranging from 3 μm to 8 μm. The finite-difference time-domain calculation is used to execute the numerical simulation for the photonic nanojets in the dielectric microdisks. The photonic nanojet measurements are performed with a scanning optical microscope system. The photonic nanojets with high intensity spots and low divergence are observed in the dielectric microdisks illuminated from the side with laser source of wavelengths 405 nm, 532 nm and 671 nm. The experimental results of key parameters are compared to the simulations and in agreement with theoretical results. Our studies show that photonic nanojets can be efficiently created by a dielectric microdisk and straightforwardly applied to nano-photonics circuit.     

Ferrofluidic masking of solid state nuclear track detectors during etching

This work presents a novel method for determining bulk etch rate of CR-39 during prolonged etching by masking the surface with a ferrofluidic film held in position by magnetostatic forces. The CR-39 etching conditions were 6.25 M NaOH solution for 24 h at temperatures ranging from 50 to 80 °C. After etching, the heights of the resulting un-etched plateaus were measured using a Talyscan 150 profilometer. The removed layer thicknesses ranged from 12 to 85 μm, giving corresponding bulk etch rates in the range 0.5–3.54 μm/h.     

Effect of PZT particle size on dielectric and piezoelectric properties of PZT–cement composites

In this work, the effect of PZT particle size on the properties of PZT–PC composites was investigated. PZT of various median particle sizes (3.8–620 μm) were used at 50% by volume to produce the composites. The results showed that the dielectric properties of the composites increased marginally with PZT particle size where ε_r = 176 and 167 for composites with 620 μm and 3.8 μm PZT particle size, respectively. A noticeable increase in d₃₃ values was also found when the particle size was increased where the composite with 620 μm PZT particles size was found to have d₃₃ value of 26 pC/N compared to 17 pC/N for the composite with 3.8 μm PZT particle size. The enhancement in the dielectric and piezoelectric properties was contributed to lesser contacting surfaces between the cement matrix and the PZT particles.     

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

The effects of atomic hydrogen and polyimide passivation on R₀A product of type-II InAs/GaSb superlattice photo detectors for cut-off wavelength of both 6.5 μm and 12 μm were investigated. Low temperature current–voltage measurement shows that the use of atomic hydrogen during molecular beam epitaxy growth can improve R₀A product by 260% for 6.5 μm cut-off superlattice diodes and by 50% for 12 μm cut-off ones. The R₀A product of polyimide-passivated diodes with 12 μm cut-off is about 80% higher than those un-passivated ones. Wannier–Stark oscillations at higher reverse bias were observed for polyimide-passivated superlattice diodes with 12 μm cut-off. No Wannier–Stark oscillations were observed for un-passivated superlattice diodes, indicating that surface leakage current dominates in un-passivated diodes, while intrinsic dark current mechanisms such as tunneling and diffusion current dominate in polyimide-passivated diodes.     

Absolute line intensities measurements and calculations for the 5.7 and 3.6 μm bands of formaldehyde

The goal of this study is to achieve absolute line intensities for the strong 5.7 and 3.6 μm bands of formaldehyde and to generate, for both spectral regions, an accurate list of line positions and intensities. Both bands are now used for the infrared measurements of this molecule in the atmosphere. However, in the common access spectroscopic databases there exists, up to now, no line parameters for the 5.7 μm region, while, at 3.6 μm, the quality of the line parameters is quite unsatisfactory. High-resolution Fourier transform spectra were recorded for the whole 1600–3200 cm^?1 spectral range and for different path-length-pressure products conditions. Using these spectra, a large set of H₂CO individual line intensities was measured simultaneously in both the 5.7 and 3.6 μm spectral regions. From this set of experimental line strength which involve, at 5.7 μm the ν₂ band and, at 3.6 μm, the ν₁ and ν₅ bands together with nine dark bands, it has been possible to derive a consistent set of line intensity parameters for both the 5.7 and 3.6 μm spectral regions. These parameters were used to generate a line list in both regions. For this task, we used the line positions generated in [Margulés L, Perrin A, Janeckovà R, Bailleux S, Endres CP, Giesen TF, et al. Can J Phys, accepted] and [Perrin A, Valentin A, Daumont L, J Mol Struct 2006;780–782:28–42] for the 5.7 and 3.6 μm, respectively. The calculated band intensities derived for the 5.7 and 3.6 μm bands are in excellent agreement with the values achieved recently by medium resolution band intensity measurements. It has to be mentioned that intensities in the 3.6 μm achieved in this work are on the average about 28% stronger than those quoted in the HITRAN or GEISA databases. Finally, at 3.6 μm the quality of the intensities was significantly improved even on the relative scale, as compared to our previous study performed in 2006.     

Picosecond laser cutting and drilling of thin flex glass

We investigate the feasibility of cutting and drilling thin flex glass (TFG) substrates using a picosecond laser operating at wavelengths of 1030 nm, 515 nm and 343 nm. 50 μm and 100 μm thick AF32^®Eco Thin Glass (Schott AG) sheets are used. The laser processing parameters such as the wavelength, pulse energy, pulse repetition frequency, scan speed and the number of laser passes which are necessary to perform through a cut or to drill a borehole in the TFG substrate are studied in detail. Our results show that the highest effective cutting speeds (220 mm/s for a 50 μm thick TFG substrate and 74 mm/s for a 100 μm thick TFG substrate) are obtained with the 1030 nm wavelength, whereas the 343 nm wavelength provides the best quality cuts. The 515 nm wavelength, meanwhile, can be used to provide relatively good laser cut quality with heat affected zones (HAZ) of <25 μm for 50 μm TFG and <40 μm for 100 μm TFG with cutting speeds of 100 mm/s and 28.5 mm/s, respectively. The 343 nm and 515 nm wavelengths can also be used for drilling micro-holes (with inlet diameters of ⩽75 µm) in the 100 μm TFG substrate with speeds of up to 2 holes per second (using 343 nm) and 8 holes per second (using 515 nm). Optical microscope and SEM images of the cuts and micro-holes are presented.     

Broadband 2.84 μm luminescence properties and Judd–Ofelt analysis in Dy3+ doped ZrF4–BaF2–LaF3–AlF3–YF3 glass

2.84 μm luminescence with a bandwidth of 213 nm is obtained in Dy³⁺ doped (ZrF₄–BaF₂–LaF₃–AlF₃–YF₃) ZBLAY glass. Three intensity parameters and radiative properties have been determined from the absorption spectrum based on the Judd–Ofelt theory. The 2.84 μm emission characteristics and energy transfer mechanism upon excitation of a conventional 808 nm laser diode are investigated. The prepared Dy³⁺ doped ZBLAY glass possessing high predicted spontaneous transition probability (45.92 s^?1) along with large calculated emission cross section (1.17×10^?20 cm²) has potential applications in 2.8 μm laser.     

Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

Optical properties of a Ho-doped LaF₃ single crystal have been detailed investigated as a promising material for 2 μm and 2.9 μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ω_t(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the ⁵I₇ → ⁵I₈ and ⁵I₆ → ⁵I₇ transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2 μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF₃ crystal shows long fluorescence lifetime of ⁵I₇ manifold (25.81 ms) as well as ⁵I₆ manifold (10.37 ms) compared with other Ho³⁺-doped crystals. It can be proposed that the Ho:LaF₃ crystal may be a promising material for 2 μm and 2.9 μm laser applications.     

Upconversion luminescence dynamics of Er-doped fluoride crystals for optical converters

Erbium (Er)-doped fluoride crystals (YLF, BYF, CaF₂, etc.) are well-known as active media for solid-state lasers emitting in IR and VIS spectral domains, and as materials for efficient near-IR to VIS upconversion. In this paper, we report on the study of conversion of IR light from an ～1.5 μm spectral region to an ～1 μm spectral domain in low-phonon RE-doped fluoride crystals CaF₂ (RE=Er³⁺ Yb³⁺). Energy transfer processes taking place at selective pulsed and CW laser excitation are investigated experimentally. It is shown that in the CaF₂:RE crystals efficient conversion of IR radiation from the ～1.5 μm region to the ～1 μm region occurs, and these crystals are perspective for using in spectral converters for enhancing solar cell efficiency.     

Structural and luminescence properties of Nd3+-doped PbO–B2O3–TiO2–AlF3 glass for 1.07 μm laser applications

Trivalent neodymium doped multi-component lead borate titanate aluminumfluoride (LBTAFNd) glasses were prepared and characterized as a function of Nd³⁺ ions concentration through optical absorption, NIR luminescence and decay measurements. The intensity (Ω_2,4,6) and other radiative parameters were determined within the frame work of Judd–Ofelt theory. The intensities of absorption bands were expressed in terms of experimental oscillator strengths. Reasonably small root mean square deviation of ±0.384×10^?6 obtained between the experimental and calculated oscillator strengths indicates the validity of intensity parameters. Upon 805 nm laser excitation, the NIR emissions at 0.92 μm (⁴F_3/2→⁴I_9/2), 1.07 μm (⁴F_3/2→⁴I_11/2) and 1.35 μm (⁴F_3/2→⁴I_13/2) were observed. The spectroscopic quality factor has been determined from the Ω₄ and Ω₆ intensity parameters as well as the intensities of emission bands centered at 1.07 and 1.35 μm. The decay curves of the ⁴F_3/2 excited state were recorded by monitoring the emission and excitation wavelengths at 1.07 μm and 805 nm, respectively. The decay curves exhibit single exponential behavior for all the glasses. The laser characteristic parameters of ⁴F_3/2→⁴I_11/2 (1.07 μm) transition were determined and compared with other reported glasses.