Nonlinear-optical and micro-Raman diagnostics of thin films and nanostructures of ABO3 ferroelectrics

Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering.     

Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures

The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric is a defect of a field type. The surface (interface) field is coupled to a normal component of polarization and, as a result, the second order phase transitions are generally suppressed and anomalies in response are washed out, as observed experimentally.     

Cold-field switching in PVDF-TrFE ferroelectric polymer nanomesas

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data, the piezoresponse force microscopy local switching was nonthermally activated and, at the same time, occurring at electric fields significantly lower than the intrinsic switching threshold. A "cold-field" defect-mediated extrinsic switching is shown to be an adequate scenario describing this peculiar switching behavior. The extrinsic character of the observed polarization reversal suggests that there is no fundamental bar for lowering the coercive field in ferroelectric polymer nanostructures, which is of importance for their applications in functional electronics.     

Ferroelectric PbTiO3 nanostructures onto Si-based substrates with size and shape control

A bottom-up approach based on the use of a microemulsion-assisted chemical solution deposition method, previously developed for the fabrication of PbTiO₃ nanostructures onto single crystal SrTiO₃ substrates, is used here on polycrystalline Pt/Si-based substrates, aiming at their integration with the current microelectronics technology. This bottom-up approach not only does not produce any damage to the nanostructures, thus not affecting noticeably their ferroelectric properties, but also solves some of the problems associated to those approaches that use the microstructural instability of ultrathin films, where islands with different shapes and sizes (single or bimodal log-normal distributions) are obtained. In this case, normal (Gaussian) size distributions are obtained, with average lateral sizes of ~70 nm, weakly depending on the solution concentration. These results show that the growth process of the nanoparticles takes place independently from one another inside the isolated micelles of the precursor solution, whose shape and size distribution therefore control effectively those of the PbTiO₃ nanostructures.     

Toroidal ferroelectricity in PbTiO3 nanoparticles

We report from first-principles-based atomistic simulations that ferroelectricity can be sustained in PbTiO(3) nanoparticles of only a few lattice constants in size as a result of a toroidal ordering. We find that size-induced topological transformations lead to the stabilization of a ferroelectric bubble by the alignment of vortex cores along a closed path. These transformations, which are driven by the aspect ratio of the nanostructure, change the topology of the polarization field, producing a rich variety of polar configurations. For sufficiently flat nanostructures, a multibubble state bridges the gap between 0D nanodots and 2D ultrathin films. The thermal properties of the ferroelectric bubbles indicate that this state is suitable for the development of nanometric devices.     

Controlling double vortex states in low-dimensional dipolar systems

The reversal process of the chirality of each opposite vortex belonging to a double vortex state in ferromagnetic hysterons, via the application of in-plane magnetic fields, is reported. Simulations reveal that such a process involves the formation of four intermediate states, including original ones. Hysteresis loops can occur only in a counterclockwise fashion because of one of these intermediate states. Double vortex states can also be controlled by electric fields in ferroelectric nanostructures of different shapes, but with some key differences with respect to the ferromagnetic case.     

Two ultrasonic applications for the synthesis of nanostructured copper oxide (II)

In this paper, we present two aspects of the ultrasonic for the synthesis of CuO (II) nanostructures. In the first ultrasound application, we made a copper tip for an ultrasonic probe transducer and used it for electrolysis and ultrasound irradiation processes. This method is named direct sonoelectrochemistry and compares with conventional electrochemistry. CuO (II) nanostructures are obtained after sintering for both direct sonoelectrochemistry method and conventional electrochemistry method. In the second application of ultrasound, the copper nanostructures were generated by the ultrasound ablation method, and then, the heating process was performed for oxidation. The formation of the copper and CuO (II) nanostructures is confirmed by the powder X-ray diffraction (XRD), the field emission electron microscopy (FESEM), and transmission electron microscopy (TEM). The results show that the direct sonoelectrochemistry method generates CuO (II) nanostructures 4.2 times more than conventional electrochemistry. The crystallite size in the electrochemistry methods and direct sonoelectrochemistry is 28.44 nm and 26.60 nm, respectively. The direct sonoelectrochemistry way is a very flexible method and parameters in electrochemical, ultrasound, and the relationship between them can play an important role in the process of synthesis of nanostructures. The crystallite size in the ultrasound ablation method is 21.13 nm and 25.23 nm for the copper and CuO (II) nanostructures. The most important advantages of this method are green, fast, and high purity of the produced nanostructures.     

Magnetic-field-induced electric polarization in multiferroic nanostructures

Magnetic-field-induced electric polarization in nanostructured multiferroic composite films was studied by using the Green's function approach. The calculations showed that large magnetic-field-induced polarization could be produced in multiferroic nanostructures due to enhanced elastic coupling interaction. Especially, the 1-3 type films with ferromagnetic nanopillars embedded in a ferroelectric matrix exhibited large magnetic-field-induced polarization responses, while the 2-2 type films with ferroelectric and ferromagnetic nanolaminates showed much weaker magnetoelectric coupling and lower magnetic induced polarization due to large in-plane constraint effect, which was in agreement with the recent observations.     

Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction

Interfacial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO₃/Nb-doped SrTiO₃ junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO₃ layer was also investigated by surface potential measurements, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO₃ layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO₃ films by tuning the magnetic field.     

Laser interference lithography using spray/spin photoresist development method for consistent periodic nanostructures

Generally, a simple immersion method for development of photoresist (PR) has been used to fabricate nanostructures by interference lithography (IL). However, the immersion method has the disadvantage that fabrication is inconsistent, especially for large-area periodic structures. Herein, we introduce the spray/spin PR development (SSPRD) method to fabricate periodic nanostructures using IL. By quantitative analysis and comparison, we characterized the effectiveness of the SSPRD method to develop PR. In our experiments the SSPRD method produced reliable uniform nanostructures, whereas the immersion method showed very poor consistency. In the SSPRD, rotation speed was very important: if it was too low the development speed differed between edges and center; if the rotation speed was too high it caused a distortion of nanostructures by unstable local flow induced by spraying and rotation So, to reduce this distortion, we adopted the puddle developing process; as a result the uniformity and repeatability of developed nanostructures were improved. These results demonstrate that the SSPRD method can be useful for fabrication of consistent periodic nanostructures.     

Magnetoelectric coupling induced multistate magnetization

Complex oxides provide an ideal playground for exploring the interplay among the fundamental degrees of freedom: structural (lattice), electronic (orbital and charge), and magnetic (spin). With trends toward device miniaturization, there is growing interest in combining electronic and magnetic properties into multifunctional thin-film materials for potential applications in novel versatile devices. Here, we report growth of ferromagnetic nanostructures on ferroelectric ($1?x$)[Pb(Mg_1/3Nb_2/3)O₃]???x[PbTiO₃] (PMN-PT) single crystals. With careful control of material composition and application of electric field direction and amplitude, we realized stabilization of both monoclinic and orthorhombic phases in the PMN-PT single crystals with the intrinsic rhombohedral phase. Multistate magnetization modulation has been realized through phase transformation control in the ferroelectric component. This finding promises multistate information recording through magnetoelectric effect.     

铁电薄膜铁电性能与温度关系的一种实时测量实验方法

介绍了一种实时测量铁电薄膜的铁电性能与温度关系的实验方法,为进一步研究铁电薄膜的特性提供了实验基础。     

Versatile synthesis of rectangular shaped nanobat-like CuO nanostructures by hydrothermal method; structural properties and growth mechanism

This paper describes a simple and versatile method for growing highly anisotropic rectangular shaped nanobat-like CuO nanostructures by simple, low temperature and cost effective hydrothermal method. Field emission scanning electron microscopy illustrated that these CuO nanostructures have diameter of ∼70 nm, thickness of ∼8 nm and length of ∼174 nm. Structural analysis reveals that the CuO nanostructures have a high crystal quality with monoclinic crystal structure. X-ray photoelectron spectroscopy studies demonstrate that the sample is composed of CuO. The Raman study also indicates the single phase property and high crystallinity of as-grown CuO nanostructures. The plausible growth mechanism for the formation of nanobat-like CuO structure is proposed.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Study of the polarization profile in film ferroelectrics by the thermal square wave method

The possibility of using the thermal square wave method at single frequency for the analysis of the polarization distribution over the depth of a thin-film ferroelectric has been considered. The temperature distribution in a ferroelectric film-substrate system has been calculated. The method has been tested using tin thiohypodiphosphate films on aluminum substrates.     

Raising the sensitivity of the electron-paramagnetic-resonance spectrometer using a ferroelectric resonator

In order to raise the sensitivity of microwave electron-paramagnetic-resonance (EPR) spectrometers, it is proposed to use a piece of ferroelectric material as an additional resonator. The method has been tested using the RE-1307 microwave EPR spectrometer and a pulsed microwave spectrometer. The possibility of raising the signal-to-noise ratio when using ferroelectric resonators of rectangular-parallelepiped and spherical shape has been considered. For a potassium-tantalate ferroelectric resonator of rectangular-parallelepiped shape, the signal-to-noise ratio has been raised by a factor of 16 at 331 K and by a factor of 10 at 292 K. In the pulse experiment, the presence of the ferroelectric resonator permits a reduction in microwave power, required for sample saturation, by a factor of 50 at 50 K.     

Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films

The effects of internal stresses and depolarization fields on the properties of epitaxial ferroelectric perovskite thin films are discussed by employing the dynamic Ginzburg-Landau equation (DGLE). The numerical solution for BaTiO₃ film shows that internal stress and the depolarization field have the most effects on ferroelectric properties such as polarization, Curie temperature and susceptibility. With the increase of the thickness of the film, the polarization of epitaxial ferroelectric thin film is enhanced rapidly under high internal compressively stress. With the thickness exceeding the critical thickness for dislocation formation, the polarization increases slowly and even weakens due to relaxed internal stresses and a weak electrical boundary condition. This indicates that the effects of mechanical and electrical boundary conditions both diminish for ferroelectric thick films. Consequently, our thermodynamic method is a full scale model that can predict the properties of ferroelectric perovskite films in a wide range of film thickness.     

Low-voltage pulse exciting electron emission from ferroelectric copolymer film cathode: Role of film thickness and emission stability

Ferroelectric copolymer thin films P(VDF-TrFE) are used as a ferroelectric cathode for investigation of their electron emission properties. This ferroelectric copolymer films with different thicknesses are deposited by spin-coating method, and then the annealing process is carried out to improve the crystallinities of as-deposited copolymer films. The measurement results of ferroelectric electron emission showed that the copolymer P(VDF-TrFE) films had a desired ferroelectric electron emission ability excited at low-voltage pulse, and its peak emission current can reach to be ∼1.3 μA when the pulse voltage is 280 V. In addition, the effect of film thickness on electron emission property and emission stability of copolymer thin film P(VDF-TrFE) are discussed.