Kinetics study of ultrafast electron transfer from sensitized dyes to silver halide microcrystals

Spectral sensitization micromechanism of cyanine dyes J-aggregate adsorbed on the tabular and cubic AgBr microcrystals with different dye concentrations is studied by using picosecond time-resolved fluorescence spectroscopy, and the dependences of electron transfer and spectral efficiency sensitization on different conditions are analysed in detail. With the steady spectroscopy, the wavelengths of absorption and fluorescence of J-aggregate adsorbed on AgBr microcrystals are found to shift to red relative to dye monomer. The spectrum of fluorescence has a red shift relative to the absorption peak. With the time-resolved fluorescence spectroscopy, the fluorescence decay curves of cyanine dyes J-aggregate adsorbed on the tabular and cubic AgBr grains are found to be fitted well by a double-exponential decay function. The fitting curves consist of a fast and a slow component. Because of the large amplitude of the fast component, this fast decay should be attributable mainly to the electron transfer from J-aggregate of dye to a conduction band of AgBr.     

The fluidity and molding ability of glass-forming Zr-based alloy melt

The fluidity and filling ability of glass-forming Zr-based alloy melt in copper mould were investigated both theoretically and experimentally. The major factors which affected the flowing behavior of the metallic melt in the mold were determined, which provides the foundation for overcoming the contradiction between the filling and formation of amorphous alloy during the rapid cooling process of the metallic melts. The casting factors to prepare a metallic ring were discussed and selected. As a result, a Zr-based bulk metallic glass ring was prepared successfully. Supported by the National Natural Science Foundation of China (Grant No. 50731005), SKPBRC (Grant No. 2006CB605201/2007CB616915), PCSIRT (Grant No. IRT0650), the Natural Science Foundation of Hebei Province of China (Grant No. E2004000209), the Scientific Research Foundation of Education Department of Hebei Province of China (Grant No. 2004464), and the Experts and Scholars Fund of Personnel Department of Hebei Province, China (Grant No. 2003)     

Optimal controlled teleportation via several kinds of three-qubit states

The probability of successful controlled teleportation of an unknown qubit using a general three-particle state is investigated. The analytic expressions of maximal probabilities via several kinds of tripartite states are given, including a tripartite Greenberger-Horne-Zeilinger state and a tripartite W-state. Supported by the National Natural Science Foundation of China (Grant No. 10671054), the Key Project of Science and Technology Research of Ministry of Education of China (Grant No. 207011), and the Natural Science Foundation of Hebei Province, China (Grant No. 07M006)     

First-principles study on the electronic structure and optical properties of CrSi<Subscript>2</Subscript>

Using the first principle methods based on the plane-wave pseudo-potential theory, band structure, density of states and optical properties of CrSi₂ were studied. The calculation of band structure shows that CrSi₂ is an indirect semiconductor whose band gap is 0.353 eV. Density of states is mainly composed of 3d electron of Cr and 3p electron of Si. Dielectric function, refractive index, reflectivity, and absorption coefficient of CrSi₂ are also calculated. The calculation results of optical properties are in agreement with the experiments. Supported by the National Natural Science Foundation of China (Grant No. 60566001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Program for Excellent Young Talents of Guizhou Province (No. 20050528), the Specialized Nomarch Research Fund for the Excellent Science and Technology and Education Talent’s Projects of Guizhou Province, the Scientific and Technological Projects for the Returned Overseas Chinese Scholars, Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province.     

Quantum secret sharing between multiparty and multiparty with four states

A protocol of quantum secret sharing between multiparty and multiparty with four states was presented. It was shown that this protocol can nullify the Trojan horse attack with a multi-photon signal, the fake-signal attack with Einstein-Podolsky-Rosen pairs, the attack with single photons, and the attack with invisible photons. In addition, the upper bounds of the average success probabilities were given for dishonest agent eavesdropping encryption using the fake-signal attack with any two-particle entangled states. Supported by the National Natural Science Foundation of China (Grant No. 10671054), the Key Project of Science and Technology Research of Education Ministry of China (Grant No. 207011) and the Natural Science Foundation of Hebei Province, China (Grant Nos. A2005000140 and 07M006)     

First-principles study of interphase Ni3Sn in Sn--Ni alloy for anode of lithium ion battery

This paper investigates the mechanism of Li insertion into interphase Ni3Sn in Ni-Sn alloy for the anode of lithium ion battery by means of the first-principles plane-wave pseudopotential. Compared with other phases, it is found that the Ni3Sn has larger relative expansion ratio and lower electrochemical potential, with its specific plateaus voltage around 0.3 eV when lithium atoms are filled in all octahedral interstitial sites, and the relative expansion ratio increasing dramatically when the lithiated phase transits from octahedral interstitial sites to tetrahedral interstitial sites. So this phase is a devastating phase for whole alloy electrode materials.     

Strong optical transmission through the ellipsoid metal-film nanohole arrays

The transmission characteristics of a metallic film with subwavelength ellipsoid nanohole arrays are investigated by using the three-dimensional finite-difference time-domain (3D-FDTD) method. The extraordinary transmission is attributed to the collaboration of localized waveguide resonance and surface plasmon resonance. The influences of the lattice constant and the hole shape on the transmission are studied. By analyzing the picture of electric field and electromagnetic energy distribution, we show the mechanisms of the two different resonances: Localized waveguide resonance mode can be confined inside the ellipsoid holes region, while electric field and electromagnetic energy are localized separately at the two ends of ellipsoid holes for the surface plasma resonance mode. Supported by the National Natural Science Foundation of China (Grant No. 60708014), the Distinguished Youth Foundation of Hunan Province (Grant No. 03JJY1008), the Science Foundation for Post-doctorate of China (Grant No. 2004035083), and the Natural Science Foundation of Hunan Province (Grant No. 06JJ20034)     

First-principles calculations on the electronic structure and optical properties of BaSi<Subscript>2</Subscript>

The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi₂ have been calculated using the first-principle density function theory and pseudopotential method. The results show that BaSi₂ is an indirect semiconductor with the band gap of 1.086 eV, the valence bands of BaSi₂ are mainly composed of Si 3p, 3s and Ba 5d, and the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p. The static dielectric function ɛ ₁(0) is 11.17, the reflectivity n ₀ is 3.35, and the biggest peak of the absorption coefficient is 2.15×10₅ cm⁻¹. Supported by the National Natural Science Foundation of China (Grant Nos. 60566001 and 60766002), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Specialized Fund of Nomarch for Excellent Talent of Science and Technology of Guizhou Province (Grant No. Z053114), the Scientific and Technological Projects for the Returned Overseas of Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province (Grant No. Z053123)     

Self-catalyst synthesis of aligned ZnO nanorods by pulsed laser deposition

High-density well-aligned ZnO nanorods were successfully synthesized on ZnO-buffer-layer coated indium phosphide (InP) (100) substrates by a pulsed laser deposition (PLD) method. Scanning electron microscopy images show that the ZnO buffer layer formed uniform drip-like structure and ZnO nanorods were well-oriented perpendicular to the substrate surface. The sharp diffraction peak observed at 34.46° in X-ray diffraction scanning pattern suggests that the ZnO nanorods exhibit a (002)-preferred orientation. The PL spectra of ZnO samples shows a strong near band edge emission centered at about 380 nm and a weak deep level emission centered at around 495 nm, and it demonstrates that the ZnO nanorods produced in this work have high optical quality, which sheds light on further applications for nanodevices. Supported by the National Natural Science Foundation of China (Grant No. 50532080), the Science & Technology Foundation for Key Laboratory of Liaoning Province (Grant No. 20060131), and the Doctoral Project by China Ministry of Education (Grant No. 20070141038)     

Carrier transport and luminescence properties of n-type GaN

The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH₄ doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×10¹⁶ cm⁻³ to 5.4×10¹⁸ cm⁻³. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH₄ increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142), the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) and the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)     

First-principle study on the electronic structure of stressed CrSi<Subscript>2</Subscript>

The electronic structure of stressed CrSi₂ was calculated using the first-principle methods based on plane-wave pseudo-potential theory. The calculated results showed that, under the uniaxial compression, the energy level of CrSi₂ shifted toward high energy and its energy gap became wider with the increasing uniaxial stress, while the gap became narrower under the negative uniaxial stress. When the negative uniaxial stress was up to −18.5 GPa, CrSi₂ was converted into a direct-gap semiconductor with the band gap of 0.32 eV. Supported by the National Natural Science Foundation of China (Grant No. 60566001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Program for the Excellent Young Talents of Guizhou Province (Grant No. 20050528), the Specialized Nomarch Research Fund for the Excellent Science and Technology and Education Talent’s Projects of Guizhou Province, Scientific and Technological Projects for the Returned Overseas Chinese Scholars, the Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province     

Generalized two-mode coherent-entangled state with real parameters

The coherent-entangled state |α, x; λ> with real parameters λ is proposed in the two-mode Fock space, which exhibits the properties of both the coherent and entangled states. The completeness relation of |α, x; λ> is proved by virtue of the technique of integral within an ordered product of operators. The corresponding squeezing operator is derived, with its own squeezing properties. Furthermore, generalized P-representation in the coherent-entangled state is constructed. Finally, it is revealed that superp...     

<Emphasis Type="Italic">In situ</Emphasis> X-ray diffraction study of structural evaluation in Fe<Subscript>73</Subscript>Cu<Subscript>1.5</Subscript>Nd<Subscript>3</Subscript>Si<Subscript>13.5</Subscript>B<Subscript>9</Subscript> amorphous alloy at high temperature

The thermodynamics structural relaxation of Fe₇₃Cu_1.5Nd₃Si_13.5B₉ amorphous alloy from room temperature to 400°C has been investigated by measuring the structure factor with in situ X-ray diffraction. The structural information of the atomic configuration such as radial distribution function (RDF) and neighbor atomic distance was gained by Fourier transformation. The research result shows that the amorphous structure remains stable in the temperature range of 30 to 400°C but exhibits distinct changes in local atomic configuration with the increase of temperature. The quantitative determination of the neighbor atomic distance suggests that the degree of short-range order changes by the temperature altering the second nearest neighbor local atomic configuration of the amorphous when structural relaxation occurs. Supported by the Natural Science Foundation of Hebei Province of China (Grant No. A2007000296), the National Natural Science Foundation of China (Grant No. 50731005), SKPBRC (Grant Nos. 2007CB616915 and 2006CB605201), and PCSIRT (Grant No. IRT0650)     

Comparing the efficiencies of different detect strategies in the ping-pong protocol

The way to compare the efficiencies of different detect strategies (DSs) in the “ping-pong” protocol is studied. The trade-off between information gain and disturbance is calculated and compared for different DSs. The comparison result primely tallies with our intuitional analysis. It is shown that the analysis of this trade-off is a feasible way to compare the performances of different DSs in theory. Supported by the National High Technology Research and Development Program of China (Grant No. 2006AA01Z419), the National Natural Science Foundation of China (Grant Nos. 90604023 and 6087319), the National Laboratory for Modern Communications Science Foundation of China (Grant No. 9140C1101010601), the Natural Science Foundation of Beijing (Grant No. 4072020), and the ISN Open Foundation.     

The double reflection on the interface of uniaxial crystals in the Savart polariscope

The reflection in the Savart polariscope is different from the isotropic medium. The double reflection of rays in the Savart polariscope is analyzed and discussed on the basis of the Snell law. The double reflection formulae of the extraordinary ray and the ordinary ray are given. These results may provide a theoretical and practical guide for studying, developing and engineering polarization interference imaging spectrometers. Supported by the National Natural Science Foundation of China (Grant Nos. 40375010 and 60278019), the Science and Technology Plan Foundation of Shaanxi Province (Grant No. 2005K04-G18), and the Special Research Project of Shaanxi Provincial Educational Department (Grant No. 07JK261)     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)     

Quantum secret sharing between <Emphasis Type="Italic">m</Emphasis>-party and <Emphasis Type="Italic">n</Emphasis>-party with six states

A quantum secret sharing scheme between an m-party group and an n-party group is proposed using three conjugate bases. A sequence of single photons, each of which is prepared in one of the six states, is used directly to encode classical information in the quantum secret sharing process. In this scheme, each of all m members in group 1 chooses randomly his/her own secret key individually and independently, and directly encodes his/her respective secret information on the states of single photons via unitary operations, then the last one sends 1/n of the resulting qubits to each member of group 2. By measuring their respective qubits, all members in group 2 share the secret information shared by all members in group 1. It renders impossible a Trojan horse attack with a multi-photon signal, a fake-signal attack with EPR pairs, an attack with single photons, and an attack with invisible photons. We give the upper bounds on the average success probabilities for dishonest agent eavesdropping encryption using the fake-signal attack with any two-particle entangled states. Supported by the National Natural Science Foundation of China (Grant No. 10671054), the Key Project of Science and Technology Research of Education Ministry of China (Grant No. 207011) and the Natural Science Foundation of Hebei Province, China (Grant Nos. 07M006 and F2009000311)     

Structures and electronic properties of SimN8-m（0 〈 m 〈 8） clusters： a density functional theory study

The geometries, electronic structures and related properties of SimN8-m（0 〈 m 〈 8） clusters are studied using density functional theory （DFT） with hybrid functional B3LYP. The calculated results reveal several trends. For any stoichiometric clusters, the lowest energy isomers with an alteration of N and Si atoms are favourable in energy if the numbers of Si and N atoms are large enough to form ... Si N-Si-N... alternative chains. The bond lengths of single Si-N bonds are very close to the corresponding values of the bulk and other SiN clusters. The geometries for N-rich and Si4N4 clusters are planar structures, but three-dimensional structures are favourable in energy for Si-rich clusters. With the increase of m, the isotropic polarizability and average polarizability increase, the total binding energies generally decrease, the HOMO-LUMO gap and vertical ionization potential oscillate with increasing number of valence electrons, and their values with even valence electrons are larger than those with odd valence electrons. The atomic charges, IR and Raman properties are also reported.     

The size effect on transport properties of colossal magnetoresistance materials La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

High quality La_0.67Ca_0.33MnO₃ (LCMO) film was deposited via a novel pulsed electron deposition technique on SrTiO₃(100) single crystal substrate. The micro-bridge with different widths was fabricated by using electron beam lithography (EBL) technique and their transport properties were studied. For the micro-bridges with width of 2 and 1.5 μm, the insulator-to-metal transition temperature (T _P) keeps unchanged compared with the film. For the micro-bridges with width of 1 μm, the T _P shifts towards the lower temperature by 50 K. When the width decreases down to 500 nm, the insulator-to-metal transition disappears. The magnetoresistance behavior of these micro-bridges was studied, and the results show that the low field magnetoresistance (LFMR) decreases and the high field magnetoresistances (HFMR) keep almost unchanged as the width of micro-bridge is reduced. Supported by the Key Project of the Natural Science Foundation of Zhejiang Province of China (Grant No. Z605131), the National Natural Science Foundation of China (Grant No. 60571029), and W. H. Tang was supported by the Creative Research Group of National Natural Science Foundation of China (Grant No. 60321001)     

Effect of the stoichiometry on the electronic structure of the Ni（111）/α-Al2O3（0001） interface： a first-principles investigation

In this paper first-principles calculations of Ni（111）/α-Al2O3（0001） interfaces have been performed, and are compared with the preceding results of the Cu （111）/α-Al2O3（0001） interface [2004 Phil. Mag. Left. 84 425]. The AI- terminated and O-terminated interfaces have quite different adhesion mechanisms, which are similar to the Cu（111）/α Al2O3（0001） interface. For the O-terminated interface, the adhesion is caused by the strong O-2p/Ni-3d orbital hybridization and ionic interactions. On the other hand, the adhesion nature of the Al-terminated interface is the image-like electrostatic and Ni-Al hybridization interactions, the latter is substantial and cannot be neglected. Charge transfer occurs from Al2O3 to Ni, which is opposite to that in the O=terminated interface. The charge transfer direction for the Al-terminated and O-terminated Ni（111）/α-A1203（0001） interfaces is similar to that in the corresponding Cu（111）/α- Al2O3（0001） interface, but there exist the larger charge transfer quantity and consequent stronger adhesion nature, respectively.