Effect of dielectric roughness on performance of pentacene TFTs and restoration of performance with a polymeric smoothing layer

The morphology, structure, and transport properties of pentacene thin film transistors (TFTs) are reported showing the influence of the gate dielectric surface roughness. Upon roughening of the amorphous SiO2 gate dielectric prior to pentacene deposition, dramatic reductions in pentacene grain size and crystallinity were observed. The TFT performance of pentacene films deposited on roughened substrates showed reduced free carrier mobility, larger transport activation energies, and larger trap distribution widths. Spin coating roughened dielectrics with polystyrene produced surfaces with 2 A root-mean-square (rms) roughness. The pentacene films deposited on these coated surfaces had grain sizes, crystallinities, mobilities, and trap distributions that were comparable to the range of values observed for pentacene films deposited on thermally grown SiO2 (roughness also approximately 2 A rms).     

Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics

The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.     

The optical and charge transport properties of discotic materials with large aromatic hydrocarbon cores

The optical absorption and charge transport properties of a series of discotic molecules consisting of peripherally alkyl-substituted polycyclic aromatic cores have been investigated for core sizes, n, of 24, 42, 60, 78, 96, and 132 carbon atoms. In dilute solution, the wavelength maximum of the first absorption band increases linearly with n according to lambda(max) = 280 + 2n and the spectral features become increasingly broadened. The two smallest core compounds display a slight red-shift and increased spectral broadening in spin-coated films. For derivatives with n = 24, 42, 60, and 96, the one-dimensional, intracolumnar charge mobility, Sigma mu(1D), was determined using the pulse-radiolysis time-resolved microwave conductivity technique. For the compounds which were crystalline solids at room temperature, Sigma mu(1D) lay within the range 0.4-1.0 cm(2)/Vs. In the discotic mesophases at ca. 100 degrees C, Sigma mu(1D) was somewhat lower and varied from 0.08 to 0.38 cm(2)/Vs. The mobility values in both phases are considerably larger than the maximum values found previously for discotic triphenylene derivatives. However, the recently proposed trend toward increasing mobility with increasing core size is not substantiated by the results on the present series of increasingly large aromatic core compounds.     

Thin film structure of tetraceno[2,3-b]thiophene characterized by grazing incidence X-ray scattering and near-edge X-ray absorption fine structure analysis

Understanding the structure-property relationship for organic semiconductors is crucial in rational molecular design and organic thin film process control. Charge carrier transport in organic field-effect transistors predominantly occurs in a few semiconductor layers close to the interface in contact with the dielectric layer, and the transport properties depend sensitively on the precise molecular packing. Therefore, a better understanding of the impact of molecular packing and thin film morphology in the first few monolayers above the dielectric layer on charge transport is needed to improve the transistor performance. In this Article, we show that the detailed molecular packing in thin organic semiconductor films can be solved through a combination of grazing incidence X-ray diffraction (GIXD), near-edge X-ray absorption spectra fine structure (NEXAFS) spectroscopy, energy minimization packing calculations, and structure refinement of the diffraction data. We solve the thin film structure for 2 and 20 nm thick films of tetraceno[2,3-b]thiophene and detect only a single phase for these thicknesses. The GIXD yields accurate unit cell dimensions, while the precise molecular arrangement in the unit cell was found from the energy minimization and structure refinement; the NEXAFS yields a consistent molecular tilt. For the 20 nm film, the unit cell is triclinic with a = 5.96 A, b = 7.71 A, c = 15.16 A, alpha = 97.30 degrees, beta = 95.63 degrees, gamma = 90 degrees; there are two molecules per unit cell with herringbone packing (49-59 degree angle) and tilted about 7 degrees from the substrate normal. The thin film structure is significantly different from the bulk single-crystal structure, indicating the importance of characterizing thin film to correlate with thin film device performance. The results are compared to the corresponding data for the chemically similar and widely used pentacene. Possible effects of the observed thin film structure and morphology on charge carrier mobility are discussed.     

Inorganic oxide core, polymer shell nanocomposite as a high K gate dielectric for flexible electronics applications

Organic/inorganic core shell nanoparticles have been synthesized using high K TiO(2) as the core nanoparticle, and polystyrene as the shell. This material is easy to process and forms transparent continuous thin films, which exhibit a dielectric constant enhancement of over 3 times that of bulk polystyrene. This new dielectric material has been incorporated into capacitors and thin film transistors (TFTs). Mobilities approaching 0.2 cm(2)/V.s have been measured for pentacene TFTs incorporating the new TiO(2) polystyrene nanostructured gate dielectric, indicating good surface properties for pentacene film growth. This novel strategy for generating high K flexible gate dielectrics will be of value in improving organic and flexible electronic device performance.     

Effect of molecule-substrate interaction on thin-film structures and molecular orientation of pentacene on silver and gold

Evaporated pentacene thin films with thicknesses from several nm to 150 nm on gold and silver substrates have been studied by ultraviolet photoelectron spectroscopy (UPS), near-edge X-ray absorption fine structure (NEXAFS), scanning tunneling microscopy (STM), and atomic force microscopy (AFM). It was found that pentacene thin-film structures, particularly their molecular orientations, are strongly influenced by the metal substrates. UPS measurements revealed a distinct change in the valence band structures of pentacene on Au compared to those on Ag, which is attributed to the different packing between adjacent molecules. Using NEXAFS, we observed 74+/-5 degrees and 46+/-5 degrees molecular tilt angles on Ag and Au, respectively, for all measured thicknesses. We propose that pentacene molecules stand up on the surface and form the "thin-film phase" structure on Ag. On Au, pentacene films grow in domains with molecules either lying flat or standing up on the substrate. Such a mixture of two crystalline phases leads to an average tilt angle of 46 degrees for the whole film and the change in valence band structures. STM and distance-voltage (z-V) spectroscopy studies confirm the existence of two crystalline phases on Au with different conducting properties. z-V spectra on the low conducting phase clearly indicate its nature as "thin-film phase".     

p-Channel organic semiconductors based on hybrid acene-thiophene molecules for thin-film transistor applications

We report the structural and electrical characterization of two new p-channel organic semiconductors, 5,5'-bis(2-tetracenyl)-2,2'-bithiophene (1) and 5,5'-bis(2-anthracenyl)-2,2'-bithiophene (2). Both compounds exhibited a high degree of thermal stability with decomposition temperatures of 530 degrees C and 425 degrees C for 1 and 2, respectively. The thin-film structures of 1 and 2 were examined using wide-angle X-ray diffraction (XRD), grazing incidence X-ray diffraction (GIXD), and atomic force microscopy (AFM). Films of 1 and 2 pack in similar triclinic unit cells with the long axes of the molecules nearly perpendicular to the substrate. Thin-film transistors (TFTs) based on 1 and 2 exhibit contact-corrected linear regime hole mobility as high as 0.5 cm2/Vs and 0.1 cm2/Vs, respectively. The specific contact resistance at high gate voltages for gold top contacts was 2 x 10(4) Ohms cm and 3 x 10(4) Ohms cm for 35 nm thick films of 1 and 2, respectively. Long-term air stability tests revealed less degradation of the electrical properties of 1 and 2 in comparison to pentacene. Variable temperature measurements revealed activation energies as low as 22 and 27 meV for 1 and 2, respectively. The temperature and gate voltage dependence of the mobility are discussed in terms of a double exponential distribution of trap states and a model accounting for the layered structure of the organic films. The enhanced air and thermal stability over pentacene, combined with good electrical performance characteristics, make 2 a promising candidate for future organic TFT applications.     

Structural order in perfluoropentacene thin films and heterostructures with pentacene

Synchrotron x-ray diffraction reciprocal space mapping was performed on perfluoropentacene (PFP) thin films on SiO2 in order to determine the crystal structure of a novel, substrate-induced thin film phase to be monoclinic with unit cell parameters of a = 15.76 +/- 0.02 A, b = 4.51 +/- 0.02 A, c = 11.48 +/- 0.02 A, and beta = 90.4 +/- 0.1 degrees . Moreover, layered and co-deposited heterostructures of PFP and pentacene (P) were investigated by specular and grazing-incidence x-ray diffraction, atomic force microscopy, and Fourier-transform infrared spectroscopy. For a ca. three-monolayers-thick PFP film grown on a P underlayer, slightly increased lattice spacing was found. In contrast, co-deposited P/PFP films form a new mixed-crystal structure with no detectable degree of phase separation. These results highlight the structural complexity of these technically relevant molecular heterojunctions for use in organic electronics.     

Oriented growth of crystalline pentacene films with preferred a-b in-plane alignment on a rubbed crystalline polymethylene surface

We have achieved a growth of highly oriented crystalline pentacene thin films, with preferred a-b in-plane orientation with respect to the rubbing direction of a rubbed polymethylene surface. The polymethylene thin film, generated on a gold surface by gold-catalyzed decomposition of diazomethane, was annealed and gently rubbed in a fixed direction by a flannelette cloth to serve as an alignment layer during the deposition of pentacene molecules. Various surface analysis techniques, including reflection absorption IR spectroscopy (RAIRS), near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, grazing incidence X-ray diffraction (GIXD), and atomic force microscopy were used to elucidate the structural details of the polymethylene and the pentacene thin films deposited on it. Two crystalline morphologies of pentacene thin film were observed: the minor one of rod-like molecular crystals having their long axes of the crystals perpendicular to the rubbing direction, and the dominant one of platelet-like and layered crystals having the molecular axes stand near vertical to the surface. Moreover, GIXD revealed that the rubbing on polymethylene indeed induced a preferential azimuthal alignment of pentacene crystallites. The deposition of pentacene at 25 degrees C led to a twin growth of crystallites with the [110] direction predominately aligned perpendicular to the rubbing direction. In contrast, the pentacene deposition at 50 degrees C produced twinned crystallites of lower twin angle and the [120] direction aligned parallel to the rubbing direction.     

Annealing-free high-mobility diketopyrrolopyrrole-quaterthiophene copolymer for solution-processed organic thin film transistors

A donor-acceptor polymer semiconductor, PDQT, comprising diketopyrrolopyrrole (DPP) and β-unsubstituted quaterthiophene (QT) for organic thin film transistors (OTFTs) is reported. This polymer forms ordered layer-by-layer lamellar packing with an edge-on orientation in thin films even without thermal annealing. The strong intermolecular interactions arising from the fused aromatic DPP moiety and the DPP-QT donor-acceptor interaction facilitate the spontaneous self-assembly of the polymer chains into close proximity and form a large π-π overlap, which are favorable for intermolecular charge hopping. The well-interconnected crystalline grains form efficient intergranular charge transport pathways. The desirable chemical, electronic, and morphological structures of PDQT bring about high hole mobility of up to 0.97 cm(2)/(V·s) in OTFTs with polymer thin films annealed at a mild temperature of 100 °C and similarly high mobility of 0.89 cm(2)/(V·s) for polymer thin films even without thermal annealing.     

X-ray scattering study of thin films of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)

Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT, is a semiconducting polymer that forms thin film transistors (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkyltrichlorosilanes ( approximately 0.2 to 0.5 cm2/V s) but forms TFTs with poor mobility on bare silicon dioxide (<0.005 cm2/V s). The microstructure of spin-coated thin films of PBTTT on these surfaces was studied using synchrotron X-ray diffraction and atomic force microscopy. PBTTT crystallizes with lamellae of pi-stacked polymer chains on both surfaces. The crystalline domains are well-oriented relative to the substrate in the as-spun state and become highly oriented and more ordered with thermal annealing in the liquid crystalline mesophase. Although the X-ray scattering from PBTTT is nearly identical on both surfaces, atomic force microscopy showed that the domain size of the crystalline regions depends on the substrate surface. These results suggest that electrical transport in PBTTT films is strongly affected by the domain size of the crystalline regions and the disordered regions between them.     

Epitaxial growth of pentacene films on Cu110

The molecular structure of thin pentacene (C(22)H(14)) films grown on a Cu(110) surface has been studied by means of He atom scattering, low energy electron diffraction, thermal desorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. Depending on the actual film thickness three different crystalline phases have been identified which reveal a characteristic reorientation of the molecular plane relative to the substrate surface. In the monolayer regime the molecules form a highly ordered commensurate (6.5x2) structure with a planar adsorption geometry. For thin multilayers (thickness <2 nm) a second phase is observed which is characterized by a lateral ((-0.65 5.69) ( 1.90 1.37)) structure and a tilting of the molecular plane of about 28 degrees around their long axis which remains parallel to the surface. Finally, when exceeding a thickness of about 2 nm subsequent growth proceeds with an upright molecular orientation and leads to the formation of crystalline films which are epitaxially oriented with respect to the substrate. The present study thus demonstrates that also on metal substrates highly ordered pentacene films with an upright orientation of the molecular planes can be grown. Photoelectron spectroscopy data indicate further that thick films do not grow in a layer-by-layer mode but reveal a significant degree of roughness.     

Structural characterization of a pentacene monolayer on an amorphous SiO2 substrate with grazing incidence x-ray diffraction

Grazing incidence X-ray diffraction reveals that a pentacene monolayer, grown on an amorphous SiO2 substrate that is commonly used as a dielectric layer in organic thin film transistors (OTFTs), is crystalline. A preliminary energy-minimized model of the monolayer, based on the GIXD data, reveals that the pentacene molecules adopt a herringbone arrangement with their long axes tilted slightly from the substrate normal. Although this arrangement resembles the general packing features of the (001) layer in single crystals of bulk pentacene, the monolayer lattice parameters and crystal structure differ from those of the bulk. Because carrier transport in pentacene OTFTs is presumed to occur in the semiconductor layers near the dielectric interface, the discovery of a crystalline monolayer structure on amorphous SiO2 has important implications for transport in OTFTs.     

Fabrication of electrochemical transistor based on pi-conjugate polymer Langmuir-Blodgett film

We fabricated an efficient organic electrochemical transistor (OECT) composed of polymer Langmuir-Blodgett (LB) film. The pi-conjugated polymer LB film, which was constructed from a poly(N-dodecylacrylamide) (pDDA) and poly(3-hexylthiophene) (PHT) mixture, was used as a conduction channel layer to connect source and drain electrodes. The mixed-polymer LB film was characterized using UV-vis spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and cyclic voltammetry. Subsequent UV spectra measurements, XRD measurements, and AFM measurements show that PHT forms a crystalline lamellar domain in the layered structure of pDDA. The OECT included 10 layers of the mixed-polymer LB film as the conduction channel layer. The OECT showed an on/off ratio of 1.1x10(4) and mobility of 7.5x10(-2) cm2 V(-1) s(-1) at low gate (VG=-1.2 V) and source-drain voltages (VDS=-0.5 V). Moreover, the necessary charge to operate the OECT was 1.1x10(-9) mol of e(-1) cm(-2), which was 2 orders smaller than the value reported using a similar device structure. The relatively high on/off ratio and low charge consumption suggest that this OECT, which is fabricated from pi-conjugated polymer LB films, is applicable to macroelectronic devices.     

High-performance,solution-processed organic thin film transistors from a novel pentacene precursor

The Lewis acid-catalyzed Diels-Alder reaction of the organic semiconductor pentacene with N-sulfinylacetamide yields a soluble adduct. Spin-coated thin films of this adduct undergo solid-phase conversion to form thin films of pentacene at moderate temperatures. Organic thin film transistors fabricated by spin-coating this adduct, followed by thermal conversion to pentacene, exhibit the highest mobility reported to date for a solution-processed organic semiconductor.     

Growth kinetics, structure, and morphology of para-quaterphenyl thin films on gold(111)

The adsorption, desorption, and growth kinetics as well as the thin film morphology and crystal structure of p-quaterphenyl (4P) grown under ultrahigh vacuum conditions on single crystalline Au(111) have been investigated. Thermal desorption spectroscopy (TDS) reveals two distinct first-order peaks attributed to monolayer desorption followed by a zero-order multilayer desorption. The saturation coverage of the full 4P monolayer has been quantitatively measured with a quartz microbalance to be 8 x 10(13) molecules/cm2. Using low energy electron diffraction the structures of the 0.5 and 1 ML (monolayer) adsorbates have been studied, showing highly regular arrangements of the 4P molecules, which are affected by the (111) surface structure. At the transition from 0.5 to 1 ML a structural compression of the overlayer has been observed. The behavior of thicker 4P films has been investigated by combined TDS-XPS (XPS-x-ray photoelectron spectroscopy). A temperature-induced recrystallization process at about 270 K has been observed for a 7 nm thick 4P film grown at 93 K, corresponding to a transition from a disordered layerlike growth to a crystalline island growth. Ex situ optical microscopy and atomic-force microscopy investigations have revealed needle-shaped 4P islands. Applying x-ray diffraction the crystalline order and epitaxial relationship of the 4P films with 30 nm and 200 nm mean thicknesses have been determined.     

Solution-deposited organic-inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable π-electron phosphonic acid building blocks and ultrathin ZrO(2) layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm(2)), excellent insulating properties (leakage current densities as low as 10(-7) A/cm(2)), and excellent thermal stability. Thin-film transistors (TFTs) fabricated with pentacene and PDIF-CN(2) as representative organic semiconductors and zinc-tin-oxide (Zn-Sn-O) as a representative inorganic semiconductor function well at low voltages (<±4.0 V). Furthermore, the TFT performance parameters of representative organic semiconductors deposited on Zr-SAND films, functionalized on the surface with various alkylphosphonic acid self-assembled monolayers, are investigated and shown to correlate closely with the alkylphosphonic acid chain dimensions.     

Solution processed high performance pentacene thin-film transistors

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).     

Doping highly ordered organic semiconductors: experimental results and fits to a self-consistent model of excitonic processes, doping, and transport

An in-depth study of n-type doping in a crystalline perylene diimide organic semiconductor (PPEEB) reveals that electrostatic attractions between the dopant electron and its conjugate dopant cation cause the free carrier density to be much lower than the doping density. Measurements of the dark currents as a function of field, doping density, electrode spacing, and temperature are reported along with preliminary Hall-effect measurements. The activation energy of the current, E(aJ), decreases with increasing field and with increasing dopant density, n(d). It is the measured change in E(aJ) with n(d) that accounts primarily for the variations between PPEEB films; the two adjustable parameters employed to fit the current-voltage data proved to be almost constants, independent of n(d) and temperature. The free electron density and the electron mobility are nonlinearly coupled through their shared dependences on both field and temperature. The data are fit to a modified Poole-Frenkel-like model that is shown to be valid for three important electronic processes in organic (excitonic) semiconductors: excitonic effects, doping, and transport. At room temperature, the electron mobility in PPEEB films is estimated to be 0.3 cm(2)/Vs; the fitted value of the mobility for an ideal PPEEB crystal is 3.4 +/- 2.7 cm(2)/Vs. The modified Poole-Frenkel factor that describes the field dependence of the current is 2 +/- 1 x 10(-4) eV (cm/V)(1/2). The analytical model is surprisingly accurate for a system that would require a coupled set of nonlinear tensor equations to describe it precisely. Being based on general electrostatic considerations, our model can form the requisite foundation for treatments of more complex systems. Some analogies to adventitiously doped materials such as pi-conjugated polymers are proposed.     

Air-assisted high-performance field-effect transistor with thin films of picene

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.