Quality improvement of single-walled carbon nanotubes by doping B in Fe/MgO catalyst

We demonstrate that the quality of the as-grown single-walled carbon nanotubes (SWCNTs) can be effectively improved by the addition of the B ingredient in the Fe/MgO catalyst. The as-grown SWCNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The SWCNTs prepared by the pure Fe/MgO catalyst have relatively low graphite crystallinity and are coated by much amorphous carbon. The intensity ratio of the D- and G-bands (I_D/I_G) in Raman spectra is relatively high (0.098 for laser 532 nm and 0.075 for laser 785 nm). The SWCNTs grown from the Fe/MgO catalyst doped with 0.1 part of B have more regular graphite structure with little amorphous carbon. The I_D/I_G values reduced remarkably (0.041 for laser 532 nm and 0.040 for laser 785 nm). The effect would be attributed to the inhibitory action of the doped B on the formation of radical hydrocarbon species for the formation of SWCNTs.     

Intrinsic mechanical properties of ultra-thin amorphous carbon layers

In this work, we extracted the film's hardness (H_F) of ultra-thin diamond-like carbon layers by simultaneously taking into account the tip blunting and the substrate effect. As compared to previous approaches, which did not consider tip blunting, this resulted in marked differences (30-100%) for the H_F value of the thinner carbon coatings. We find that the nature of the substrate influences this intrinsic film parameter and hence the growth mechanisms. Moreover, the H_F values generally increase with film thickness. The 10 nm and 50 nm thick hydrogenated amorphous carbon (a-C:H) films deposited onto Si have H_F values of, respectively, ∼26 GPa and ∼31 GPa whereas the 10 nm and 50 nm thick tetrahedral amorphous carbon (t-aC) films deposited onto Si have H_F values of, respectively, ∼29 GPa and ∼38 GPa. Both the a-C:H and t-aC materials also show higher density and refractive index values for the thicker coatings, as measured, respectively by X-ray reflectometry and optical profilometry analysis. However, the Raman analysis of the a-C:H samples show bonding characteristics which are independent of the film thickness. This indicates that in these ultra-thin hydrogenated carbon films, the arrangement of sp² clusters does not relate directly to the hardness of the film.     

Effect of alkaline cleaning and activation on aluminum alloy 7075-T6

The effect of alkaline cleaning and activation on the composition and thickness of the oxide layer on aluminum alloy 7075-T6 was studied. E-pH diagrams were developed to predict the effect of alkaline cleaning and activation solutions on the stability of the oxide surface layers. The thickness of the native oxide layer was determined to be ∼30 nm by Auger electron spectroscopy depth profiling analysis. The outer ∼20 nm was rich in magnesium while the remaining ∼10 nm was rich in aluminum. Cleaning in a 9.1 pH alkaline solution was found to remove the magnesium-rich layer and leave behind an aluminum-rich oxide layer ∼10 nm thick. Activation in alkaline solutions of NaOH (pH > 12.9) or Na₂CO₃ (pH > 11.5) produced an oxide that was ∼20 to 60 nm thick and rich in magnesium. Alkaline cleaning and activation altered the oxide composition and thickness making it possible for deposition of thicker cerium-based conversion coatings (∼100 to 250 nm) compared to only alkaline cleaning (∼30 nm), with application of one spray cycle of deposition solution.     

Optical properties of Er in MoO3-Bi2O3-TeO2 glasses

Erbium-doped MoO₃−Bi₂O₃−TeO₂ (MBT) glasses suitable for broadband optical amplifier applications have been fabricated and characterized optically. The maximum phonon band of undoped glasses is at 915 cm⁻¹, and the emission from the Er³⁺: ⁴I_13/2 → ⁴I_15/2 transition locates around 1.53 μm with a full width at half maximum (FWHM) of ∼80 nm. The lifetime and quantum efficiency of the ⁴I_13/2 level are 2.13 ms and ∼90%, respectively. Under the same measurement condition, the upconversion emission intensities at 550 nm in Er³⁺-doped MBT glasses is about 30 times weaker than that in Er³⁺-doped Na₂O−ZnO−TeO₂ (NZT) glasses.     

Low voltage electrodeposition of CNx films and study of the effect of the deposition voltage on bonding configurations

Carbon nitride (CN_x) films were deposited from acetonitrile at low voltage (150-450 V) through electrodeposition. The films were characterized by atomic force microscopy (AFM), Raman spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. AFM investigations revealed that the grain size was ∼200 nm and roughness was ∼10 nm. The films were found to be continuous and close packed. IR spectra revealed existence of strong sp³, sp² type bonding and weak sp type carbon nitrogen bonds and these bonds were found to increase with voltage. The fraction of sp³-bonded species in the sample increased in low voltage range and after reaching maximum at 350 V, decreased for higher voltages. However, the concentration of sp² CN ring structures in the film increased with increasing voltage. Also, the peak width decreased at low voltages reaching a minimum and increased thereafter. It was observed that the voltage dependent increase in the concentration of polymeric type sp² CN (chain) structures was much more pronounced than that of graphitic type sp² CN (ring) structures. Raman spectra showed the presence of both the D and G bands. The shift in the G band indicated the presence of nitrogen in the film. The I_D/I_G ratio was found to increase with the incorporation of nitrogen. Auger electron spectroscopy (AES) showed a clear increase in the nitrogen content with increase in the voltage. The formation of the film could be explained on the basis of dissociation of electrolyte under applied voltage.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

Signatures of epitaxial graphene grown on Si-terminated 6H-SiC (0 0 0 1)

Epitaxial graphene layers thermally grown on Si-terminated 6H-SiC (0 0 0 1) have been probed using Auger electron spectroscopy, Raman microspectroscopy, and scanning tunneling microscopy (STM). The average multilayer graphene thickness is determined by attenuation of the Si (L₂₃VV) and C (KVV) Auger electron signals. Systematic changes in the Raman spectra are observed as the film thickness increases from one to three layers. The most striking observation is a large increase in the intensity of the Raman 2D-band (overtone of the D-band and also known as the G′-band) for samples with a mean thickness of more than ∼1.5 graphene layers. Correlating this information with STM images, we show that the first graphene layer imaged by STM produces very little 2D intensity, but the second imaged layer shows a single-Lorentzian 2D peak near 2750 cm⁻¹, similar to spectra acquired from single-layer micromechanically cleaved graphene (CG). The 4-10 cm⁻¹ higher frequency shift of the G peak relative to CG can be associated with charge exchange with the underlying SiC substrate and the formation of finite size domains of graphene. The much greater (41-50 cm⁻¹) blue shift observed for the 2D-band may be correlated with these domains and compressive strain.     

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO₂ films and the effects of structural and native defects of the ZrO₂ films on the electrical and dielectric properties were investigated. For preparing ZrO₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO₂(∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.     

Upconversion luminescence from Er-N codoped of ZnO nanowires prepared by ion implantation method

Nitrogen and erbium co-doped of ZnO nanowires (NWs) are fabricated by ion implantation and subsequent annealing in air. The incorporation of Er³⁺ and N⁺ ions is verified by energy dispersive X-ray spectroscopy (EDS) and Raman spectra. The samples exhibit upconversion photoluminescence around ∼550 nm and ∼660 nm under an excitation at 980 nm. It is discovered that the N-doped can drastically increase the upconversion photoluminescence intensity by modifying the local structure around Er³⁺ in ZnO matrix. The enhancement of the PL intensity by the N-doped is caused by the formation of ErO_6−xN_x octahedron complexes. With the increase of the annealing temperature (T_a), the Er³⁺ ions diffuse towards the surface of the NWs, which benefits the red emission and evokes the variation of intensity ratio owing to the existence of some organic groups.     

Synthesis, vibrational and optical properties of a new three-layered organic-inorganic perovskite (C4H9NH3)4Pb3I4Br6

An organic-inorganic hybrid perovskite (C₄H₉NH₃)₄Pb₃I₄Br₆ was synthesized and studied by X-ray diffraction, Raman and infrared spectroscopies, optical transmission and photoluminescence. The title compound, abbreviated (C₄)₄Pb₃I₄Br₆, crystallises in a periodic two-dimensional multilayer structure with P2₁/a space group. The structure is built up from alternating inorganic and organic layers. Each inorganic layer consists of three sheets of PbX₆ (X=I, Br) octahedra. Raman and infrared spectra of the title compound were recorded in the 100-3500 and 400-4000 cm⁻¹ frequency ranges, respectively. An assignment of the observed vibration modes is reported. Optical transmission measurements, performed on thin films of (C₄)₄Pb₃I₄Br₆, revealed two absorption bands at 474 and 508 nm. Photoluminescence measurements have shown a green emission peak at 519 nm.     

Low energy repetitive miniature plasma focus device as high deposition rate facility for synthesis of DLC thin films

Diamond-like carbon (DLC) films were deposited on Si (1 0 0) substrate using a low energy (219 J) repetitive (1 Hz) miniature plasma focus device. DLC thin film samples were deposited using 10, 20, 50, 100 and 200 focus shots with hydrogen as filling gas at 0.25 mbar. The deposited samples were analyzed by XRD, Raman Spectroscopy, SEM and XPS. XRD results exhibited the diffraction peaks related to SiO₂, carbon and SiC. Raman studies verified the formation amorphous carbon with D and G peaks. Corresponding variation in the line width (FWHM) of the D and G positions along with change in intensity ratio (I_D/I_G) in DLC films was investigated as a function of number of deposition shots. XPS confirmed the formation sp² (graphite like) and sp³ (diamond like) carbon. The cross-sectional SEM images establish the 220 W repetitive miniature plasma focus device as the high deposition rate facility for DLC with average deposition rate of about 250 nm/min.     

Photoluminescence spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532-nm laser radiation and gamma-rays

We have investigated temporal behavior of the photoluminescence (PL) spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532 nm laser radiation and gamma-rays. Under ∼100 W/cm² laser radiation, the PL intensity (I_PL) increases with irradiation time upto about 500 s and thereafter declines linearly. The wavelength of the PL emission (λ_peak) exhibits a blue-shift with exposure time. Upon simultaneous irradiation by 100 W/cm² 532-nm laser, as well as 0.57 and 1.06 MeV gamma-rays, the temporal behaviors of both I_PL and λ_peak are significantly different; I_PL increases to a saturation level, and the magnitude of the blue-shift in λ_peak is reduced. We discuss possible mechanisms underlying these results.     

Modeling and experimental investigation of short pulse Raman microchip laser

The results of experimental and theoretical investigations of passive Q-switch Raman microchip lasers based on Nd³⁺:LSB active medium and Ba(NO₃)₂ Raman crystal are presented. It has been demonstrated that intracavity Raman conversion in the microchip lasers is a simple and efficient method, capable of delivering high power pulses with sub-100 ps duration. Intracavity generation of the 1st Stokes pulses with duration from 180 down to 48 ps and a peak power of 48 kW has been performed and studied. High peak power and short duration of the 1st Stokes pulses in microchip laser with Ba(NO₃)₂ Raman crystal allows to easily perform extracavity harmonic generation and frequency sum mixing in LBO, BBO, and KTP crystals with discrete-tunable wavelength from ∼1200 down to ∼240 nm. We have developed a generalized model of Q-switched Raman microchip lasers, that takes into account spatial inhomogeneity of pump, laser, and Stokes beams, thermalization within the upper and lower multiplets of activator ions in laser medium, and saturable absorber bleaching and recovery. For the microchip lasers with different saturable absorbers, the model achieves very good agreement with the presented experimental results in a wide range of pump powers.     

Preparation of Ru-loaded CdS/Al-HMS nanocomposites and production of hydrogen by photocatalytic degradation of formic acid

The composite of aluminum-substituted mesoporous silica (Al-HMS) molecular sieve coupled with CdS (CdS/Al-HMS) was prepared by template, ion exchange and sulfurization reactions. The result of low angle XRD patterns showed that the low content of 2.5 wt% CdS is incorporated inside Al-HMS channels. The results of diffuse reflectance UV-visible spectra and fluorescence emission spectra exhibited that the absorption edge and photoluminescence peak for CdS/Al-HMS are blue-shifted about 75 nm and 40 nm in comparison to bulk CdS, respectively. The activities of hydrogen production by photocatalytic degradation of formic acid were evaluated under visible light irradiation (λ ≥ 420 nm) and the CdS/Al-HMS loaded 0.07 wt% Ru showed the highest H₂ evolution at a rate of 3.7 mL h⁻¹ with an apparent quantum yield of 1.2% at 420 nm.     

Nano-graphene structures deposited by N-IR pulsed laser ablation of graphite on Si

Thin nano-structured carbon films have been deposited in vacuum by pulsed laser ablation, from a rotating polycrystalline graphite target, on Si 〈1 0 0〉 substrates, kept at temperatures ranging from RT to 800 °C. The laser ablation was performed by a Nd:YAG laser, operating in the near IR (λ = 1064 nm).X-ray diffraction analysis, performed at grazing incidence angle, both in-plane (ip-gid) and out-of-plane (op-gid), has shown the growth of oriented nano-sized graphene particles, characterised by high inter-planar stacking distance (d_? ∼ 0.39 nm), compared to graphite. The film structure and texturing are strongly related both to laser wavelength and substrate temperature: the low energy associated to the IR laser radiation (1.17 eV) generates activated carbon species of large dimensions that, also at low T (∼400 °C), easy evolve toward more stable sp² aromatic bonds, in the plume direction. Increasing temperature the nano-structure formation increases, causing a further aggregation of aromatic planes, voids formation, and a related density (by X-ray reflectivity) drop to very low values. SEM and STM show for these samples a strongly increased macroscopic roughness. The whole process, mainly at higher temperatures, is characterised by a fast kinetic mode, far from equilibrium and without any structural or spatial rearrangement.     

Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 °C

3C-SiC(0 0 1) surfaces are considerably rough with the roughness root mean square value (R_ms) of 1.3 nm, but the surfaces become considerably smooth (i.e., R_ms of 0.5 nm) by heat treatment in pure hydrogen at 400 °C. Two-step nitric acid (HNO₃) oxidation (i.e., immersion in ∼40 wt% HNO₃ followed by that in 68 wt% HNO₃) performed after the hydrogen treatment can oxidize 3C-SiC at extremely low temperature of ∼120 °C, forming thick SiO₂ (e.g., 21 nm) layers. With no hydrogen treatment, the leakage current density of the 〈Al/SiO₂/3C-SiC〉 metal-oxide-semiconductor (MOS) diodes is high, while that for the MOS diodes with the hydrogen treatment is considerably low (e.g., ∼10⁻⁶ A/cm² at the forward gate bias of 1 V) due to the formation of uniform thickness SiO₂ layers. The MOS diodes with the hydrogen treatment show capacitance-voltage curves with accumulation, depletion, and deep-depletion characteristics.     

Exploration of fractal nature of WO3 nanowire aggregates

The morphology of WO₃ aggregates formed by irregular nanoparticles (D∼40 nm) and nanowires of different aspect ratios (2, 4, 6, and 10 μm nominal lengths) dispersed in commonly used polar solvents without dispersant agents is investigated using a small-angle light scattering technique and by means of fractal theory. Nanoparticles form compact spherical aggregates (D_f∼2.6), whereas 2 μm nanowires with low aspect ratio (L/D∼10) follow a slow cluster-cluster aggregation mechanism with no discernable change in fractal dimension (D_f=2.1) monitored in an extended period of 6 months, despite a notable growth in size (R_g=2.3-3.1 μm). For higher aspect ratio nanowires, scattered intensity profiles, which migrate towards the Porod regime, qualitatively obey the Lorenz-Mie theory predictions. The 10 μm nanowires with very high aspect ratio (L/D∼250) are observed to form stable dispersions in a time span of 6 days. Analytical methods based on spherical primary particle formulations predict D_f=1.9, 1.7, and 1.4 for 4, 6, and 10 μm nanowires, respectively.     

Exchange bias in (1 1 0)-orientated Bi0.9La0.1FeO3/La0.5Ca0.5MnO3 films

We performed a systematic study on the exchange bias in (1 1 0)-orientated Bi_0.9La_0.1FeO₃/La_0.5Ca_0.5MnO₃ (BLFO/LCMO) heterostructure with a fixed BLFO film thickness of 600 nm and different LCMO layers ranging from t=0 to 30 nm. The LCMO is found to be weakly ferromagnetic, with the Curie temperature descending from ∼225 K to 0 as the layer thickness decreases from 30 nm to 3 nm. The main magnetic contributions come from the BLFO film, and the areal magnetization ratio is 1:0.07 for t=5 nm and 1:0.82 for t=30 nm for BLFO to LCMO at the temperature of 5 K. Further experiments show the presence of significant exchange bias, and it is, at the temperature of 10 K, ∼40 Oe for t=0 and ∼260 Oe for t=30 nm. The exchange bias reduces dramatically upon warming and disappears above the blocking temperature of the spin-glasslike behavior observed in the samples. The possible origin for exchange bias is discussed.     

Optical detection of near infrared femtosecond laser-heating of Er-doped ZnO-Nb2O5-TeO2 glass by green up-conversion fluorescence of Er ions

The green up-conversion fluorescence of Er³⁺ ions doped in an nonlinear optical ZnO-Nb₂O₅-TeO₂ glass was observed by using 800 nm excitation from a regenerative femtosecond (fs) Ti:Sapphire laser. The detailed analysis on two fluorescence lines at 526 nm (²H_11/2-⁴I_15/2) and 548 nm (⁴S_3/2-⁴I_15/2) revealed the fs laser heating of the multi-component TeO₂-based glass, which was possibly due to its nonlinear absorption of the host glass via the imaginary part of the third-order optical susceptibility (χ⁽³⁾). The result was compared with that of a Er³⁺-doped aluminosilicate glass under the same irradiation condition. When the fs laser was irradiated to the multicomponent TeO₂-based glass in the power density of 150 TW/cm², the laser spot was heated up to ∼520 K, which however was still less than the glass transition temperature (T_g=688 K). This technique provides a useful sensing method of laser spot temperature even inside transparent materials.