Oxygen isotope separation utilizing two-frequency infrared multiphoton dissociation of 2,3-dihydropyran

Oxygen isotope separation has been examined by utilizing the two-frequency infrared multiphoton dissociation (IRMPD) of 2,3-dihydropyran (DHP). The two-frequency IRMPD reduces the required laser fluences to those lower than the damage threshold of optical windows. For example, dissociation probability of DHP containing ¹⁸O (D(¹⁸O)) and enrichment factor (S) were obtained to be 1.6×10⁻³/pulse and 316, respectively, by the simultaneous irradiation with 1052.2 cm⁻¹ photons at 0.45 J/cm² and 1031.5 cm⁻¹ photons at 1.06 J/cm². These are comparable with D(¹⁸O)=2.2×10⁻³/pulse and S=391 obtained by the single-frequency irradiation of 1033.5 cm⁻¹ photons at 2.2 J/cm². Therefore, the production rate of an ¹⁸O enriched dissociation product has been increased to four times or more, compared with the single-frequency IRMPD, and this two-frequency method would promise a practical large scale separation.     

Radiation defects introduced by MeV electrons in argon implanted MOS structures

The influence of MeV electron irradiation on the interface states of argon implanted thin oxide MOS samples has been studied by the thermally stimulated current (TSC) method. The oxide thickness of the structures is 18 nm. Two groups of n-type MOS structures non-implanted and implanted with 20 keV Ar⁺ ions and a dose of 5×10¹² cm⁻² are examined. Both groups are simultaneously irradiated by 23 MeV electrons with doses of 1.2×10¹⁶, 2.4×10¹⁶ or 6.0×10¹⁶ el/cm². The energy position and density of the interface states (generated by electron irradiation, ion implantation or both treatments of the samples) are determined. It is shown that MeV electron irradiation decreases the concentration of interface states (like an oxygen-vacancy and di-vacancy) slightly and creates additional interface states (like an impurity-vacancy) at the Si–SiO₂ interface of argon implanted MOS structures.     

CEMS study on aluminium implanted iron

Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted iron layers are studied. Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×10¹⁶ and 5×10¹⁷ cm⁻². Independent of energy, at doses up to 2×10¹⁷ cm⁻², besides alpha iron further magnetic fractions with a Fe₃Al-like structure are formed while at a dose of 5×10¹⁷ cm⁻² amorphous nonmagnetic components are formed.     

Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS<Subscript>2</Subscript> single crystal

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS₂ single crystal with a layered structure has been investigated in the frequency range from 5 × 10⁴ to 3.5 × 10⁷Hz. It has been shown that gamma irradiation of the TlInS₂ single crystal with a dose of 10⁴–2.25 × 10⁶ rad leads to a considerable increase in the dielectric loss tangent tanδ, the real part ɛ′ and imaginary part ɛ″ of the complex permittivity, and the ac conductivity σ _ac across the layers. It has been established that, for all gamma irradiation doses, the TlInS₂ single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 10⁷ Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS₂ single crystal results in an increase in the dispersion of tan δ, ɛ′, and ɛ″. It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS₂ single crystal, the density of localized states near the Fermi level N _F increases (from 5.2 × 10¹⁸ to 1.9 × 10¹⁹ eV⁻¹ cm⁻³).     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Dielectric properties of natural,modified, and irradiated zeolites

The complex permittivity (ɛ = ɛ′ − iɛ″) of natural, modified, and irradiated zeolites as a function of the frequency of a variable electric field is measured. For Ba²⁺-modified (doped) zeolite, the permittivity and dielectric loss tangent (tanδ) as functions of the electric field frequency are found to decrease monotonically. When the irradiation dose rises to 10⁵ cm⁻², the dielectric loss tangent reaches a maximum and then, starting from a dose of 3 × 10¹⁶ cm⁻², sharply drops. Such behavior of tanδ is assumed to be associated with Ba²⁺- and irradiation-induced structural modifications in the unit cell of zeolite.     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

Influence of Cr<Superscript>+</Superscript> ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi<Subscript>2</Subscript>/Si(111) heterostructures

The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with a dose varying from 6 × 10¹⁵ to 6 × 10¹⁶ cm⁻² and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide (CrSi₂) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850°C upon implantation and pulsed ion-beam annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 10¹⁶ cm⁻². At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical reflectance spectroscopy data, semiconducting CrSi₂ precipitates arise inside the silicon substrate, which diffuse toward its surface during growth.     

ESR study of exchange coupled pairs in copper diethyldithiocarbamate

ESR investigations on exchange coupled pairs of Cu ions in single crystals of Cu(dtc)₂, isomorphously diluted with the corresponding diamagnetic zinc salt, are reported. The spin Hamiltonian parameters for the coupled species (S=1) are:g _‖=2.1025,g ₊=2.031,A=75.1×10⁻⁴ cm⁻¹,B=14.8×10⁻⁴,D=276.0×10⁻⁴ cm⁻¹ andE=46.7×10⁻⁴ cm⁻¹. While theg andA tensors show tetragonal symmetry, the zeor-field splitting tensor is rhombic and has principal axes different from those of theg andA tensors. Intensity measurements made down to 4.2 K indicate that the exchange is ferromagnetic with |FFF| ∼ 10 cm⁻¹. Direct dipole-dipole interaction appears to be the major contribution to the zero-field splitting. A calculation on the distributed point dipole model shows that dipolar interaction is considerably modified by the high covalency of the Cu-S bond and accounts for the rhombic nature of the tensor. The possible exchange mechanisms in Cu(dtc)₂—direct exchange and superexchange through the bridging sulphurs—are discussed.     

Changes in 8–12 μm CdxHg1?xTe photodiode arrays caused by fast neutron irradiation

We have measured the current-voltage characteristics of the long-wavelength infrared (LWIR) photodiode array, formed on the epitaxial Cd_xHg_1−xTe film (x = 0.21–0.23) with a high concentration of the Shockley-Read-Hall centres, before and after irradiating it with fast neutrons (energy 1 MeV, dose 5×10¹³ cm⁻²) at room temperature. Residual changes in current-voltage characteristics, persisting after 20 days, have been identified. Model calculations indicate that the Shockley-Read-Hall centre concentration increases 2–4 times, and the carrier lifetime decreases 2–5 times after the irradiation.     

Structural features of aluminium alloy 1441 irradiated by Ar+ ions

Using electron microscopy it was found that irradiation of clad cold-worked specimens made of commercial aluminium-lithium alloy 1441 by the Ar ⁺ ions of energy 40 keV at low doses of irradiation (10¹⁵ cm⁻², irradiation time 1 s, T < 70 °C) and ion-current density of about 100 μA/cm² results in the transformation of the cellular structure formed in the alloy under deformation. As the dose of irradiation is increased up to 10¹⁶ cm⁻², a transition from a cellular to a subgrain structure close to a polygonal one is observed. The efficiency of the process is increased with ion-current density. Furthermore, under ion irradiation at increased ion-current densities, the β′(Al ₃ Zr) and Al ₈ Fe ₂ Si particles present in the deformed alloy dissolve, and disperse particles of a new Al ₂ LiMg phase of platelet shape are formed. The changes in the dislocation structure and phase composition in alloy 1441 are observed several seconds after irradiation not only in the surface layer adjacent to the ion incorporation band but also through the thickness of the specimen tens of thousands times greater than ion projective ranges. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 73–81, February, 2007.     

Study of irradiated superconducting films by SPM techniques

YBa₂Cu₃O₇-x and NbC superconducting films have been irradiated with helium ions with energies of 1.2 MeV and 200 keV, respectively, up to a dose of 4 × 10¹⁵ cm⁻². After that, they were investigated using an NTEGRA Aura probe nanolaboratory in the atomic force microscopy mode. A degradation of physical parameters, as well as damage formation in the form of craters of tens nanometers in size, was observed after irradiation. Etched regions of ∼0.6 μm in size were formed at the places of accumulation of damages.     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

Impedance and FTIR studies on plasticized PMMA–LiN(CF<Subscript>3</Subscript>SO<Subscript>2</Subscript>)<Subscript>2</Subscript> nanocomposite polymer electrolytes

Plasticized polymer electrolytes composed of poly(methyl methacrylate) (PMMA) as the host polymer and lithium bis(trifluoromethanesulfonyl)imide LiN(CF₃SO₂)₂ as a salt were prepared by solution casting technique at different ratios. The ionic conductivity varied slightly and exhibited a maximum value of 3.65 × 10⁻⁵ S cm⁻¹ at 85% PMMA and 15% LiN(CF₃SO₂)₂. The complexation effect of salt was investigated using FTIR. It showed some simple overlapping and shift in peaks between PMMA and LiN(CF₃SO₂)₂ salt in the polymer electrolyte. Ethylene carbonate (EC) and propylene carbonate (PC) were added to the PMMA–LiN(CF₃SO₂)₂ polymer electrolyte as plasticizer to enhance the conductivity. The highest conductivities obtained were 1.28 × 10⁻⁴ S cm⁻¹ and 2.00 × 10⁻⁴ S cm⁻¹ for EC and PC mixture system, respectively. In addition, to improve the handling of films, 1% to 5% fumed silica was added to the PMMA–LiN(CF₃SO₂)₂–EC–PC solid polymer electrolyte which showed a maximum value at 6.11 × 10⁻⁵ S cm⁻¹ for 2% SiO₂.     

Addition and spin exchange rate constants by longitudinal field μSR: The Mu+NO reaction

The addition reaction Mu+NO+M→MuNO+M and the spin exchange reaction Mu(↑) +MO(↓)→Mu(↓)+NO(↑) have been measured by longitudinal field μSR at room temperature in the presence of up to 58 atm of N₂ as inert collider. The pressure dependence of the longitudinal relaxation rate due to the addition reaction (λ_c) demostrates that the system is still in the low pressure regime in this pressure range. The corresponding termolecular rate constant has been determined ask _0,Mu =(1.10±0.25)×10⁻³² cm⁶ molecules⁻² s⁻¹, almost 4 times smaller than the corresponding H atom reactionk _0,H=3.90×10⁻³² cm⁶ molecules⁻² s⁻¹ [I.M. Campbell et al., J. Chem. Soc. Faraday Trans. 1.71 (1975) 2097]. The average value of the spin exchange rate constants in the 2.5–58 atm pressure range,k _SE=(3.16±0.06)×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, is in good agreement with previous values obtained by transverse field μSR [D.G. Fleming et al., J. Chem. Phys. 73 (1980) 2751].     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Experimental determination of the rate constant for spin exchange in collisions of polarized metastable helium atoms with ground-state cesium atoms

The rate constant for spin exchange in a system consisting of a metastable helium atom and an alkali-metal atom is determined. An experiment on optical orientation of atoms established that the rate constant for spin exchange in a collision of a metastable 2³ S ₁ helium atom with a cesium atom in the 6² S _1/2 ground state equals (2.8±0.8)×10⁻⁹ cm³ s⁻¹. The rate constant for chemoionization of cesium atoms by metastable helium atoms was determined at the same time to be (1.0±0.3)×10⁹ cm³s⁻¹. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 145–148 (10 August 1997)     

Rapid and sensitive trace gas detection with continuous wave Optical Parametric Oscillator-based Wavelength Modulation Spectroscopy

A fiber-amplified Distributed Bragg Reflector diode laser is used to pump a continuous wave, singly resonant Optical Parametric Oscillator (OPO). The output radiation covers the 3–4 μm with ability of rapid (100 THz/s) and broad mode-hop-free tuning (5 cm⁻¹). Wavelength Modulation Spectroscopy is combined with the OPO to take optimal advantage of the spectral scan speed. The sensitivity of the system was determined as 0.8 ppbv (parts-per-billion by volume) for ethane (C₂H₆) for the absorption peak at 2996.9 cm⁻¹ recorded in 1.3 seconds, corresponding to a noise equivalent absorption sensitivity (NEAS) of 1.2×10⁻⁹ cm⁻¹/Hz^1/2. A comparison between results using the 1^st, 2^nd and 4^th harmonic derivative signal from wavelength modulation was performed. The broad continuous tunability was demonstrated by covering 35 cm⁻¹ while recording absorption features of ethane, methane and water.