Study of well adherent DLC film deposited on piezoelectric LiTaO3 substrate

A well adherent diamond-like carbon (DLC) film was deposited on piezoelectric LiTaO₃ substrate using PECVD by inserting SiO₂ interlayer. DLC film was characterized using Raman spectroscopy and AFM. Physical and mechanical properties were measured using XRR, ellipsometry, scratch test and nano-indentation. The DLC film exhibits the characteristics of hydrogenated amorphous carbon and a very smooth surface with a 0.25 nm RMS. Scratch test shows that critical load (L_c) is 18 N, which is good enough for applying DLC film to SAW device. The measured mass density, refractive index, hardness and Young’s modulus of DLC film deposited on LiTaO₃ are comparable to the reported values for hydrogenated amorphous carbon film, irrespective of substrates on which the films were deposited.     

Substrate bias effects during diamond like carbon film deposition by microwave ECR plasma CVD

Diamond like carbon (DLC) coatings were deposited on silicon(1 1 1) substrates by microwave electron cyclotron resonance (ECR) plasma CVD process using a plasma of Ar and CH₄ gases under the influence of DC self bias generated on the substrates by application of RF (13.56 MHz) power. DLC coatings were deposited under the varying influence of DC bias (−60 V to −150 V) on the Si substrates. Deposited films were analyzed by different techniques like: X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), Hardness and elastic modulus determination technique, Raman spectroscopy, scanning electron microscopy (SEM) and contact angle measurement. The results indicate that the film grown at −100 V bias has optimised properties like high sp³/sp² ratio of carbon bonding, high refractive index (2.26–2.17) over wide spectral range 400–1200 nm, low roughness of 0.8 nm, high contact angle (80°) compared to the films deposited at other bias voltages (−60 V and −150 V). The results are consistent with each other and find august explanation under the subplantation model for DLC growth.     

Submicron gold structures formed by atomic force microscopy lithography on thin films of poly(methyl methacrylate)

Thin films of poly(methyl methacrylate) (PMMA) (25 nm) deposited on gold coated glass substrates have been locally modified by exposure to biased atomic force microscopy (AFM) tips. Constant exposure currents in the range of 0.5–0.65 nA leads to removal of PMMA both by direct ablation and enhanced solubility in a developer solution. Possible mechanisms causing such modifications have been discussed. Submicron Au structures were formed by combining AFM lithography, involving localized removal of PMMA, with sputter deposition of gold and a lift-off process.     

Metrology of electromagnetic static actuation of MEMS microbridge using atomic force microscopy

The objective of this paper is to describe application of atomic force microscopy (AFM) for characterization and calibration of static deflection of electromagnetically and/or thermally actuated micro-electromechanical (MEMS) bridge. The investigated MEMS structure is formed by a silicon nitride bridge and a thin film metal path enabling electromagnetic and/or thermal deflection actuation. We present how static microbridge deflection can be measured using contact mode AFM technology with resolution of 0.05 nm in the range of up to tens of nm. We also analyze, for very small structure deflections and under defined and controlled load force varied in the range up to ca. 32 nN, properties of thermal and electromagnetical microbridge deflection actuation schemes.     

Observation of intermolecular N–I interaction during the growth of a 4-cyano-4′-iodobiphenyl molecular crystal on GeS(001)

The electronic and atomic structures of 4-cyano-4′-iodobiphenyl (CIB) during the growth of a molecular crystal on a GeS(001) substrate were studied by ultraviolet photoemission spectroscopy (UPS), atomic force microscopy (AFM), and extended X-ray absorption fine structure (EXAFS) spectroscopy. AFM images suggest that the CIB molecule grows as a microcrystal at a nominal thickness of 80 Å. The microcrystal grows with the crystal plane parallel to the surface and isotropic crystal axis orientation. EXAFS analysis suggests that a CIB crystal forms by strong N···I interaction, called halogen bonding. The formation of the intermolecular N···I bond was demonstrated by EXAFS analyses in which the N–I distance was determined to be 3.29 Å. An upward shift of the highest occupied molecular orbital level was observed by UPS and can be attributed to the aggregation of CIB molecules caused by halogen bonding.     

Structural and electrochemical characterization of Ni nanostructure films on steels with brush plating and sputter deposition

Layers of nickel were coated on low carbon steel substrates applying both brush plating and DC magnetron sputtering techniques. X-ray diffraction analysis showed a preferential orientation along (1 1 1) for both sputter deposited and brush plated Ni nanostructure coatings. The sputtered Ni film showed better crystallinity as observed from XRD compared to brush plated Ni film on steel on account of the favorable conditions for grain growth in sputtering. SEM analysis indicated that the coatings are very regular without pores, with columnar structure for the sputter deposited Ni coatings. AFM was also applied for surface topography examination. Microhardness value was found to be higher for sputtered Ni film. Corrosion performance of these nanostructured Ni coatings were evaluated using electrochemical techniques and observed that the corrosion resistance of brush plated Ni film sample was significantly higher than that of the sputtered Ni film.     

Production of nanostructured magnetic materials using holographic lithography

The magnetic properties of Co, Ni and NiFe sub-micrometric structures produced by holographic lithography and sputtering techniques are investigated. The structures were obtained using a mask previously recorded by holography in a photo-resist film coated on a quartz substrates. After this procedure, the magnetic material was deposited using the sputtering technique, and the photo resist was removed by lift-off. Samples with thicknesses of around 500 Å were grown in stripes structures and periodicity of 800 nm. The results indicate that the samples with Co and NiFe present exchange bias effect and this is due the surface oxidation.     

Atomic force microscopy enabled roughness analysis of nanostructured poly (diaminonaphthalene) doped poly (vinyl alcohol) conducting polymer thin films

The Atomic Force Microscopy (AFM) helps in evaluating parameters like amplitude or height parameters, functional or statistical parameters and spatial parameters which describe the surface topography or the roughness. In this paper, we have evaluated the roughness parameters for the native poly (vinyl alcohol) (PVA), monomer diaminonaphthalene (DAN) doped PVA, and poly (diaminonaphthalene) (PDAN) doped PVA films prepared in different solvents. In addition, distribution of heights, skewness and Kurtosis moments which describe surface asymmetry and flatness properties of a film were also determined. At the same time line profiles, 3D and 2D images of the surface structures at different scanning areas i.e. 5 × 5 μm² and 10 × 10 μm² were also investigated. From the roughness analysis and the surface skewness and coefficient of Kurtosis parameters, it was concluded that for PVA film the surface contains more peaks than valleys and the PDAN doped PVA film has more valleys than peaks. It was also found that the PDAN doped PVA film with acetonitrile solvent was used for substrate in electronics applications because the film gives less fractal morphology. Thus, the AFM analysis with different parameters suggested that the PDAN doped PVA films are smooth at the sub-nanometer scale.     

Mechano-chemical AFM nanolithography of metallic thin films: A statistical analysis

A mechano-chemical atomic force microscope (AFM) nanolithography on a metallic thin film (50 nm in thickness) covered by a spin-coated soft polymeric mask layer (50–60 nm in thickness) has been introduced. The surface stochastic properties of initial grooves mechanically patterned on the mask layer (grooves before chemical wet-etching) and the lithographed patterns on the metallic thin film (the grooves after chemical wet-etching) have been investigated and compared by using the structure factor, power spectral density, and AFM tip deconvolution analyses. The effective shape of cross section of the before and after etching grooves have been determined by using the tip deconvolution surface analysis. The wet-etching process improved the shape of the grooves and also smoothed the surface within them. We have indicated that relaxation of the surface tension of the deposited mask layer after the AFM scribing is independent from surface density of the grooves and also their length scale. Based on the statistical analysis, it was found that increase of the width of the grooves after the wet-etching and also relaxation of surface tension of the mask layer resulted in a down limit in the size of the metallic nanowires made by the combined nanolithography method. An extrapolation of the analyzed statistical data has indicated that, in this method, the minimum obtainable width and length of the metallic nanowires are about 55 nm and 2 μm, respectively.     

The formation of sub-10 nm nanohole array on block copolymer thin films on gold surface using surface neutralization based on O2 plasma treatment and self-assembled monolayer

Blockcopolymer (BCP) lithography is an emerging nanolithography technique for fabrications of various nanoscale devices and materials. In this study, self-assembled BCP thin films having cylindrical nanoholes were prepared on gold by surface neutralization using self-assembled monolayer (SAM). Oxygen plasma treatment was investigated as a way to enhance the functionality of Au surface toward SAM formation. After surface neutralization, well-ordered nanoholes with 9 to 20 nm diameters were formed inside BCP thin films on Au surfaces through microphase separation. The effects of oxygen plasma treatment on the formation of BCP nanopattern were investigated using surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. Au nanodot arrays were fabricated on gold film by utilizing the BCP nanotemplate and investigated by atomic force microscopy (AFM).     

Fabrication of broadband anti-reflective sub-micron structures using polystyrene sphere lithography on a Si substrate

Anti-reflective coatings are widely used on the surfaces of solar cells to increase the efficiency of photoelectric conversion. Sub-wavelength structures have gradually replaced conventional anti-reflective (AR) thin films due to their broadband AR properties. This paper successfully fabricated structures with a variety of surface morphologies on Si substrate using polystyrene sphere lithography in conjunction with two-step inductive coupling plasma (ICP) and high density plasma (HDP) etching processes. We successfully fabricated various sub-micron structures with heights of 700 nm and above. Experimental results show that the sub-micron pyramidal structure has the best anti-reflection performance with the average reflectance effectively suppressed to below 1% across the spectral range of 300–1200 nm.     

Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

The effects of growth parameters such as barrier growth time, growth pressure and indium flow rate on the properties of InGaN/GaN multiple quantum wells (MQWs) were investigated by using photoluminescence (PL), high resolution X-ray diffraction (HRXRD), and atomic force microscope (AFM). The InGaN/GaN MQW structures were grown on c-plane sapphire substrate by using metalorganic chemical vapor deposition. With increasing barrier growth time, the PL peak energy is blue-shifted by 18 nm. For InGaN/GaN MQW structures grown at different growth pressures, the PL intensity is maximized in the 300 Torr – grown structure, which could be attributed to the improved structural quality confirmed by HRXRD and AFM results. Also, the optical properties of InGaN/GaN MQW are strongly affected by the indium flow rate.     

Design,optimization and fabrication of 2D photonic crystals for solar cells

This paper presents the optimization of 2D photonic crystals (PCs) onto Si wafers to improve the performance of c-Si PV cells. The objective is to find a structure capable of minimizing the reflectance of the Si wafer in the spectral range between 400 nm and 1000 nm. The study has been limited to PCs that can be fabricated and characterized with the tools and technology available and to dimensions in the same order as the visible light wavelength. PCs with different shapes and dimensions have been simulated and finally the optimum structure has been fabricated by a process based on laser interference lithography (LIL) and reactive ion etching (RIE). This optimized PC presents an average reflectance of 3.6% in the selected wavelength range, without any other material used as antireflective coating. This result means a drastic reduction in comparison with reflectance obtained out of the standard wet etch texturization used in current solar cell manufacturing lines.     

High resolution measurement and modelling of magnetic domain structures in epitaxial FePd (0 0 1) L10 films with perpendicular magnetisation

Magnetic domain structures in two 50 nm thick chemically-ordered FePd (0 0 1) epitaxial films with different perpendicular anisotropies have been studied using Lorentz microscopy. Domain and domain wall structures vary significantly according to the magnitude of the anisotropy. For lower anisotropy films, a stripe domain structure with a period of ≈100 nm is formed in which there is a near-continuous variation in orientation of the magnetisation vector. By contrast, in the film with higher anisotropy, a maze-like domain structure is supported. The magnetisation within domains is perpendicular to the film plane and adjacent domains are separated by narrow walls, less than 20 nm wide. Micromagnetic modelling is generally in good quantitative agreement with experimental observations and provides additional information on the domain wall structure.     

Tribological effect of iron oxide residual on the DLC film surface under seawater and saline solutions

This paper discusses the seawater and saline solutions effects on the tribological behavior of diamond-like carbon (DLC) films. The adsorption of Fe on DLC surface is one of the mechanisms that is believed to be the cause of the decrease in dispersive component of the surface energy and increase of the I_D/I_G ratio leading to low friction coefficient and wear rate under corrosive environments. Tribological behaviors DLC films were experimentally evaluated under corrosive environments by using steel ball and DLC coated steel flat under rotational sliding conditions. The DLC films were prepared on 440 stainless steel disks by DC-pulsed PECVD using methane as a precursor gas. Two different set of tribological system was assembled, one when the liquids and the pairs were put inside of a stainless steel vessel and others inside of a PTFE. Every tribological test was performed under 10 N normal load120 mms^? 1 of sliding speed. The friction coefficients were evaluated during 1000 cycles.     

Ablation depth control with 40 nm resolution on ITO thin films using a square,flat top beam shaped femtosecond NIR laser

We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λ_p=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm². The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x–y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.     

Room temperature near-field photoluminescence of zinc-blend and wurtzite ZnO structures

Near-field photoluminescence (PL) was measured from ZnO film, composed of nanocrystallites with zinc-blend (ZB) and wurtzite (W) structures, on a sapphire (0 0 0 1) substrate at room temperature (RT). The size of nanocrystallites was in the range of 30–50 nm. Using a fiber probe with aperture size of 80 nm, two near-field emission peaks attributed to one ZB and one W structures were observed. The difference in the emission energies was 0.10 eV close to the calculated bandgap difference between ZB and W structures. The intensity of emission peak from ZB structure with lower energy was stronger than that from W structure, which is supposed to be resulted from the quenched excitonic effect of W structure.     

Improved light extraction of GaN-based light-emitting diodes with surface-patterned ITO

The surface patterning of the indium tin oxide (ITO) transparent current layer has been investigated to improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs). LEDs with periodic micro-hexagon patterned ITO have been fabricated utilizing standard lithography techniques and inductively coupled plasma (ICP) technology. The luminance intensity of the LED chips with patterned ITO following 160 s ICP etching was enhanced by about 50% compared to the LED chips with unpatterned ITO. Detailed processing parameters are provided. scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the micro-structures. The results indicate that the surface-patterned ITO technique could have potential applications in high-power GaN-based LEDs.     

Micro-solid oxide fuel cell using thick-film ceria

A fabrication method that does not use lithography or etching processes for thick-film based micro-SOFCs (Solid Oxide Fuel Cells) was described and discussed. In this study, a new type of micro-SOFC was fabricated using a free-standing thick-film electrolyte with ~ 20 μm thickness. This structure has the advantages of both electrolyte-support and electrode-support type SOFCs. Generally, the electrolyte should be thicker than e.g., ~ 150 μm since a thinner electrolyte easily cracks in a self-supporting mode during the fabrication procedure. Thus, a new mounting method was developed in order to use a thin-electrolyte film. In this study, a ~ 20 μm-thick GDC (Gd-doped ceria) electrolyte film was successfully mounted on a ~ 400 μm-thick GDC ring by sintering these two pieces together. Ni-GDC and Sm_0.5Sr_0.5CoO₃ were brush painted as an anode and a cathode, respectively. With this new configuration, it was possible to construct an electrolyte-supported SOFC using a thick-film ceria-based electrolyte and measure the power density. The open-circuit voltage (OCV) of the cell in 97%H₂ + 3%H₂O/air was ~ 0.87 V and the maximum power density was ~ 270 mW/cm² at 600 °C. The result shows that the high performance is achievable for the micro-SOFCs using a thick-film ceria-electrolyte operating at 600 °C.     

Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy

Self-assembled In_0.4Ga_0.6As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to [0 1 −1] and [−2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate.