ICP－AES法测定人体血清中的Al、Be、Cu、Mn、Mo、V

建立了用ＩＣＰ－ＡＥＳ同时测定人体血清中的Ａｌ、Ｂｅ、Ｃｕ、Ｍｎ、Ｍｏ、Ｖ等六种元素的方法。在我们的设备上，检出限对Ａｌ、Ｃｕ、Ｍｏ为１～３μｍｏｌ／Ｌ，而对Ｂｅ、Ｍｎ、Ｖ为０．１～０．３μｍｏｌ／Ｌ。这六种元素的回收率在１００±２０％之间。     

ICP－AES测定核纯海绵锆中17个杂质元素方法的研究

应用ＩＣＰ－ＡＥＳ法，对核纯海绵锆中１７个杂质元素的测定进行了试验研究。取样量１００ｍｇ时，Ａｌ、Ｃａ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｎ、Ｍｏ、Ｎｉ、Ｐｂ、Ｓｎ、Ｔａ、Ｔｉ、Ｖ、Ｙ和Ｚｎ的测定范围是１０μｇ／ｇ—３２００μｇ／ｇ。回收率为９５．２％—１０６．５％。     

ICP—AES法测定人体血清中的Al,Be,Cu,Mn,Mo,V

建立了用ＩＣＰ－ＡＥＳ同时测定人体血清中的Ａｌ，Ｂｅ，Ｃｕ，Ｍｎ，Ｍｏ，Ｖ等六种元素的方法。在我们的设备上，检出限对Ａｌ，Ｃｕ，Ｍｏ为１－３μｍｏｌ／Ｌ，而对Ｂｅ，Ｍｎ，Ｖ为０．１－０．３μｍｏｌ／Ｌ。这六种元素的回收率在１００±２０％之间。     

TBP色层分离—ICP／AES法测定锆铀铒合金中十七个微量杂质元…

本法对锆铀铒合金中十七个微量杂质元素和铒的测定进行了较系统的实验研究。取样１００ｍｇ时，Ａｌ，Ｃａ，Ｃｏ，Ｃｒ，Ｃｕ，Ｆｅ，Ｍｇ，Ｍｎ，Ｍｏ，Ｎｉ，Ｐｂ，Ｓｎ，Ｔａ，Ｔｉ，Ｖ，Ｙ和Ｚｎ的测定范围为３０－３２００μｇ／ｇ，Ｅｒ为０．２－３．２％，回收率９４－１０８％，ＲＳＤ为０．２－２．１％。     

TBP色层分离－ICP／AES法测定锆铀铒合金中十七个微量杂质元素和铒

本法对锆铀铒合金中十七个微量杂质元素和铒的测定进行了较系统的实验研究。取样１００ｍｇ时，Ａｌ、Ｃａ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｎ、Ｍｏ、Ｎｉ、Ｐｂ、Ｓｎ、Ｔａ、Ｔｉ、Ｖ、Ｙ和Ｚｎ的测定范围为３０～３２００μｇ／ｇ，Ｅｒ为０．２～３．２％，回收率为９４～１０８％，ＲＳＤ（ｎ＝８）为０．２～２．１％。     

ICP－AES法测定儿童血液中的Zn、Ca、Fe、Cu和Mg

本文研究了全血中锌、钙、铁、铜、镁微量元素的电感耦合等离子体发射光谱法的测定。方法简便，具有良好的精密度和准确度，相对标准偏差分别为Ｚｎ１．６％、Ｃａ１．４％、Ｆｅ１．１％、Ｃｕ２．１％、Ｍｇ１．１％。回收率在９５％－１０５％之间。     

ICP-AES法同时测定螺旋藻中Ca、Mg、P、Fe、Cu、Mn、Zn

本文研究了干法灰化,盐酸溶解盐类,ＩＣＰ－ＡＥＳ技术同时测定螺旋藻中Ｃａ、ｍｇ、Ｐ、Ｆｅ、Ｃｕ、Ｍｎ、Ｚｎ的方法,进行了共存离子干扰和谱线干扰试验,对Ｃｕ、Ｍｎ、Ｚｎ进行了ＡＡＳ法测定对比。方法的相对标准偏差为１．３９％－５．０２％,标准回收率为９５．６％－１０４．８％。方法快速、准确、可靠。     

ICP—AES测定核纯海绵锆中17个杂质元素方法的研究

应用ＩＣＰ－ＡＥＳ法，对核纯海绵锆中１７个杂质元素的测定进行了试验研究。取样量１００ｍｇ时，Ａｌ、Ｃａ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｎ、Ｍｏ、Ｎｉ、Ｐｂ、Ｓｎ、Ｔａ、Ｔｉ、Ｖ、Ｙ和Ｚｎ的测定范围是１０μｇ／ｇ－３２００μｇ／ｇ。回收率为９５．２％－１０６．５％。     

钼（钨）─铜─硫─二烷基二硫代甲酸根原子簇化合物的核磁共振研究

用１Ｈ、１３Ｃ、９５ＭｏＮＭＲ技术研究了一系列Ｍｏ（Ｗ）—ＣＯ—Ｓ一ｄｔｃ原子簇化合物，并用动态９５ＭｏＮＭＲ技术跟踪了ＭｏＯｎＳ４（ｎ＝０，２），ＣｕＣｌ，Ｒ２ｄｔｃ（Ｒ２＝Ｍｅ２，Ｅｔ２）几个反应，在此基础上推导了该系列化合物的形成机理．     

ICP－AES法分析水质的探讨

本文用ＩＣＰ－ＡＥＳ（电感耦合等离子体－原子发射光谱法）测定水中Ａｌ、Ｂ、Ｂａ、Ｂｅ、Ｃａ、Ｃｄ、Ｃｏ、Ｃｒ、Ｃｕ、Ｆｅ、Ｍｇ、Ｍｏ、Ｍｎ、Ｎｉ、Ｐｂ、Ｓｒ、Ｖ、Ｚｎ等１８种微量元素。方法简便、快速，只将样品简单酸化，即可测定。方法检出限为０．０００５－０．５μｇ／ｍＬ。相对标准偏差＜１８％     

Hyperboloid,instanton, oscillator

We suggest the exactly solvable model of the oscillator on a four-dimensional hyperboloid which interacts with a SU(2)$\mathit{SU}(2)$ instanton. We calculate its wavefunctions and spectrum.     

Solid-phase reactions between (100) GaAs and thin-film refractory metals (Ti,Zr, V,Nb, Cr,Mo, and W)

Recently, there has been an increased interest in the applications of refractory metals as gate materials for the self aligned gate process in the fabrications of GaAs field effect transistors. In this study, we systematically investigated the thermally induced interface interactions between (100) GaAs substrates and thin films of refractory metals (Ti, Zr, V, Nb, Cr, Mo, and W). Depth profilings of the M/GaAs interfaces were obtained using conventional and heavy ion Rutherford backscattering spectrometry. Phase identifications were achieved by x-ray diffraction.Results on the phase formation sequence, reaction kinetics, the distribution, composition and structure of the reacted phases and the interface reactivity of these contacts will be presented. Correlations between metal properties (electronegativity and metal-metal bond strength) and kinetics of the reactions (activation energy and reactivity of the interfaces) will also be discussed.     

Ab initio electronic, dynamic, and thermodynamic properties of isotopic lithium hydrides (LiH, LiD, LiT, LiH, LiD, and LiT)

The structural, dielectric, lattice-dynamical, and thermodynamical properties of isotopic lithium hydrides (⁶LiH, ⁶LiD, ⁶LiT, ⁷LiH, ⁷LiD, and ⁷LiT) were investigated within density-functional theory. The atomic structure was fully relaxed and the structural parameters were found to differ by less than 2% from the experimental data. The associated electronic band structure and density of states were also presented. A linear-response approach to the density-functional perturbation theory was employed to work out the Born effective charges, dielectric tensors and phonon frequencies, and thermodynamic properties. The compounds with the heavier Li isotope or H isotope have the lower phonon frequencies; ⁶LiT is more stable than ⁷LiT, ⁶LiD, ⁷LiD, ⁶LiH, and ⁷LiH in the temperature range 0-2700 K. These properties of LiT were predicted for the first time. The results were discussed in terms of the isotope effects on phonon dispersion curves and thermodynamic properties.     

A crystal field investigation of the properties of RCuAs2 (R=Pr, Nd, Sm, Tb, Dy, Ho, Er and Yb)

A crystal field (CF) investigation of the magnetic properties and heat capacities of RCuAs₂ (R=Pr, Nd, Sm, Tb, Dy, Ho, Er and Yb) has been carried out using the observed average magnetic susceptibilities (1.8-300 K) of the title compounds. The CF parameters proposed for the systems show a systematic variation throughout the rare-earth series. Other physical properties dependent on the CF are also computed and compared with available experimental data. The experimental heat capacity data reported for a limited range of temperature agree well with computed heat capacity for all the compounds (except SmCuAs₂ and YbCuAs₂). CF J mixing was found to be appreciable for all the samples except YbCuAs₂.     

Middle-infrared random lasing of Cr doped ZnSe, ZnS, CdSe powders, powders imbedded in polymer liquid solutions, and polymer films

Room temperature (RT) middle-infrared (Mid-IR) random lasing of chromium- (Cr) doped ZnSe, ZnS, and CdSe powders, powders imbedded in perfluorocarbon liquid polymer solutions, and fluorocarbon polymer films is reported. Laser active powders were prepared without a stage of bulk crystal growth by annealing of starting chemicals (pure, mixed ZnSe:CrSe; ZnS:CrS; CdSe:CrSe). Mixture of the different semiconductor hosts allows tuning oscillation wavelength from 2240 to 2630 nm.     

Electronic structure and magnetism of RPdIn compounds (R=La, Ce, Pr, Nd)

RPdIn (R = La-Nd) compounds were studied by means of magnetic susceptibility, specific heat and photoelectron spectroscopy measurements. The results prove that CePdIn is an antiferromagnetic Kondo lattice with T_N below 1.7 K. The Pr-based indide remains paramagnetic down to 1.7 K, and the lack of any magnetic ordering may be due to the presence of a singlet as the crystalline electric field ground state or/and strong hybridization between Pr 4f states and Pd 4d states. In turn, NdPdIn exhibits ferromagnetism below about 26 K. In contrast to CePdIn, for the Pr- and Nd-based compounds any significant enhancement of the electronic specific heat coefficient was observed.     

Cliffordization, spin, and fermionic star products

Deformation quantization is a powerful tool for quantizing theories with bosonic and fermionic degrees of freedom. The star products involved generate the mathematical structures which have recently been used in attempts to analyze the algebraic properties of quantum field theory. In the context of quantum mechanics they provide a quantization procedure for systems with either bosonic or fermionic degrees of freedom. We illustrate this procedure for a number of physical examples, including bosonic, fermionic, and supersymmetric oscillators. We show how non-relativistic and relativistic particles with spin can be naturally described in this framework.     

Fisher information, Borges operators, and q-calculus

We discuss applying the increasingly popular q-calculus, or deformed calculus, so as to suitably generalize Fisher’s information measure and the Cramer-Rao inequality. A q-deformation can be attained in multiple ways, and we show that most of them do not constitute legitimate procedures. Within such a context, the only completely acceptable q-deformation is that ensuing from using the so-called Borges derivative [E.P. Borges, Physica A 340 (2004) 95].     

Coherence, polarization, and entanglement for classical light fields

We examine a classical version of entanglement between spatial and polarization degrees of freedom for classical light. We examine the relation between classical entanglement, polarization, and several recently introduced measures of coherence for vectorial waves. We show that there is no definite relation between quantum and classical entanglement.     

Radiation trapping effects in Cu, Mn, Ca, Sr, and Ba vapor lasers

The radiation trapping effect was investigated in Cu, Mn, Ca, Sr, and Ba vapor lasers with a cylinder discharge tube. Compared with the negligible impact induced by the gas temperature, the lower level population density of radiation trapping was found to dominate the effective spontaneous emission probability. Meanwhile a tube radius scanning from 1 mm to 20 mm revealed that the threshold parameters of radiation trapping effect were affected little by the tube radius when the radius changed from 20 mm to 5 mm, but they varied visibly when the tube radius decreased from 5 mm to 1 mm. Furthermore, the threshold temperature and the lower level population density of the radiation trapping effect in six resonant lines in Cu, Mn, Ca, Sr and Ba vapor lasers were calculated, and the threshold temperature was found to be close to the initial lasing temperature of the corresponding resonance level to metastable level transition.