Erasable Ferroelectric Domain Wall Diodes

The unipolar diode-like domain wall currents in LiNbO3 single-crystal nanodevices are not only attractive in terms of their applications in nonvolatile ferroelectric domain wall memory,but also useful in half-wave and full-wave rectifier systems,as well as detector,power protection,and steady voltage circuits.Unlike traditional diodes,where the rectification functionality arises from the contact between n-type and p-type conductors,which are unchanged after off-line production,ferroelectric domain wall diodes can be reversibly created,erased,positioned,and shaped,using electric fields.We demonstrate such functionality using ferroelectric mesa-like cells,formed at the surface of an insulating X-cut LiNbO₃ single crystal.Under the application of an in-plane electric field above a coercive field along the polar Z axis,the domain within the cell is reversed to be antiparallel to the unswitched bottom domain via the formation of a conducting domain wall.The wall current was rectified using two interfacial volatile domains in contact with two side Pt electrodes.Unlike the nonvolatile inner domain wall,the interfacial domain walls disappear to turn off the wall current path after the removal of the applied electric field,or under a negative applied voltage,due to the built-in interfacial imprint fields.These novel devices have the potential to facilitate the random definition of diode-like elements in modern large-scale integrated circuits.     

Influence of an external electric field on the motion of a ferroelectric domain wall

The study of the influence of an external electric field on the motion from rest of a domain wall in ferroelectric crystals is presented. The solution of the problem representing the translational and rotational motions of the chain is sought in terms of solitary waves. Both electric and mechanical state of the structure in domains can be determined. The evolution of the velocity of the wall altered by the applied field is determined by means of energy arguments accounting for electromechanical couplings. A numerical simulation is given which illustrates the transient motion from rest of a wall separating two ferroelectric domains.     

铁电畴夹层结构中声致发光的探讨

由4mm铁电半导体构成的铁电180°畴夹层结构,在超声波的激发下有铁电畴层波产生。铁电畴层波的电势场使电子和空穴不断地分离与复合而辐射光脉冲,将超声波能量转化为光能。调节超声波,可改变光脉冲的强度和周期。     

Multiferroic domain dynamics in strained strontium titanate

Multiferroicity can be induced in strontium titanate by applying biaxial strain. Using optical second harmonic generation, we report a transition from 4/mmm to the ferroelectric mm2 phase, followed by a transition to a ferroelastic-ferroelectric mm2 phase in a strontium titanate thin film. Piezoelectric force microscopy is used to study ferroelectric domain switching. Second harmonic generation, combined with phase-field modeling, is used to reveal the mechanism of coupled ferroelectric-ferroelastic domain wall motion. These studies have relevance to multiferroics with coupled polar and axial phenomena.     

电场诱导水的太赫兹透射特性研究

许多生物分子自身的转动、振动或分子团的整体振动模式都位于太赫兹波段内,因此可以利用太赫兹光谱技术对生物分子进行检测。同时又由于太赫兹波的光子能量仅为毫电子伏量级,不会对分子的内部结构造成破坏,所以太赫兹时域光谱技术在生物检测方面具有良好的应用前景。众所周知,绝大多数的生物分子只有在液体条件下才能发挥其生物活性,所以研究液体环境下生物分子之间的相互作用就非常必要。然而水分子的转动模式、振动模式以及和氢键有关的能量均处于太赫兹波段,从而对其产生强烈的吸收;另外,水分子为极性分子,而极性分子对太赫兹波有强烈的共振吸收,这就使利用太赫兹技术对生物分子活性进行动态表征产生了困难。因此在研究溶液中的生物分子与太赫兹波的相互作用时,最大限度地减小水分子对太赫兹波的吸收就成为近年来的研究热点。目前,减少水对太赫兹波吸收的主要方法有：在溶液样品中加入抑制氢键缔合的离子来减小水对太赫兹的吸收;通过改变溶液的温度来调节水对太赫兹的吸收;利用微流控芯片技术,通过减小被测样品与太赫兹波的作用距离来减小水对太赫兹波的吸收。另外,激光的激励、电场或磁场的处理,也能改变水对太赫兹波的吸收,将盛有去离子水的微流控芯片放于电场中,研究经电场处理不同时间的去离子水对太赫兹吸收强度的影响。结果发现,太赫兹波的透射强度随着去离子水在电场当中静置时间的增加而增强,当在电场中静置60 min时,太赫兹的频谱强度达到最大,与空气的频谱强度接近。由此可以推断外加电场使水分子的偶极矩发生了变化,从而对整体水分子的振动和转动产生了影响,并且改变了水中的氢键结构,导致了太赫兹透射光谱强度的增强。     

Acoustic Imaging Frequency Dynamics of Ferroelectric Domains by Atomic Force Microscopy

We report the acoustic imaging frequency dynamics of ferroelectric domains by low-frequency acoustic probe microscopy based on the commercial atomic force microscopy. It is found that ferroelectric domain could be firstly visualized at lower frequency down to 0.5 kHz by AFM-based acoustic microscopy. The frequency-dependent acoustic signal revealed a strong acoustic response in the frequency range from 7kHz to 10 kHz, and reached maximum at 8.1 kHz. The acoustic contrast mechanism can be ascribed to the different elastic response of ferroelectric microstructures to local elastic stress fields, which is induced by the acoustic wave transmitting in the sample when the piezoelectric transducer is vibrating and exciting acoustic wave under ac electric fields due to normal piezoelectric effects.     

Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM

In situ Transmission Electron Microscopy (TEM) techniques can potentially fill in gaps in the current understanding interfacial phenomena in complex oxides. Select multiferroic oxide materials, such as BiFeO(3) (BFO), exhibit ferroelectric and magnetic order, and the two order parameters are coupled through a quantum-mechanical exchange interaction. The magneto-electric coupling in BFO allows control of the ferroelectric and magnetic domain structures via applied electric fields. Because of these unique properties, BFO and other magneto-electric multiferroics constitute a promising class of materials for incorporation into devices such as high-density ferroelectric and magnetoresistive memories, spin valves, and magnetic field sensors. The magneto-electric coupling in BFO is mediated by volatile ferroelastically switched domains that make it difficult to incorporate this material into devices. To facilitate device integration, an understanding of the microstructural factors that affect ferroelastic relaxation and ferroelectric domain switching must be developed. In this article, a method of viewing ferroelectric (and ferroelastic) domain dynamics using in situ biasing in TEM is presented. The evolution of ferroelastically switched ferroelectric domains in BFO thin films during many switching cycles is investigated. Evidence of partial domain nucleation, propagation, and switching even at applied electric fields below the estimated coercive field is revealed. Our observations indicate that the occurrence of ferroelastic relaxation in switched domains and the stability of these domains is influenced the applied field as well as the BFO microstructure. These biasing experiments provide a real time view of the complex dynamics of domain switching and complement scanning probe techniques. Quantitative information about domain switching under bias in ferroelectric and multiferroic materials can be extracted from in situ TEM to provide a predictive tool for future device development.     

原位Raman光谱技术应用于铁电陶瓷畴变与电疲劳研究

基于铁电陶瓷材料90°畴变导致Raman光谱变化的原理,自行设计并搭建了铁电材料原位测试分析和数据采集系统,通过与Raman光谱仪的联用,利用特制的样品旋转装置,从实验上证实在外加电场作用下铁电材料中的90°畴变使平均电畴的择优取向发生改变,从而导致Raman光谱强度的变化,利用铁电材料原位测试分析和数据采集系统,实现...     

Observation of domain wall motions in alanine doped triglycine sulphate ferroelectric crystal

In an Alanine doped triglycine sulphate ferroelectric crystal, domain wall motions show roughly the same velocity vs. electric field as in pure TGS (after the specific bias field of the observed region has been annealed by an opposite external field). The different steps of the hysteresis loop can be brought together with domain switchings which have been made visible by the pyroelectric probe technique.     

All-magnonic spin-transfer torque and domain wall propagation

The spin-wave transportation through a transverse magnetic domain wall (DW) in a magnetic nanowire is studied. It is found that the spin wave passes through a DW without reflection. A magnon, the quantum of the spin wave, carries opposite spins on the two sides of the DW. As a result, there is a spin angular momentum transfer from the propagating magnons to the DW. This magnonic spin-transfer torque can efficiently drive a DW to propagate in the opposite direction to that of the spin wave.     

Observation of domain wall motions in alanine doped triglycine sulphate ferroelectric crystal

In an Alanine doped triglycine sulphate ferroelectric crystal, domain wall motions show roughly the same velocity vs. electric field as in pure TGS (after the specific bias field of the observed region has been annealed by an opposite external field). The different steps of the hysteresis loop can be brought together with domain switchings which have been made visible by the pyroelectric probe technique.     

紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转

对紫外激光诱导近化学计量比钽酸锂晶体铁电畴反转进行了实验研究。波长为351 nm的连续紫外激光被聚焦在近化学计量比钽酸锂晶体的-z表面,同时沿与晶体自发极化相反的方向施加均匀外电场。实验证实紫外激光辐照可以有效地降低晶体畴反转所需的矫顽电场,采用数字全息干涉测量技术检测证实在激光辐照区域实现局域畴反转。研究表明采用紫外激光诱导可以实现对近化学计量比钽酸锂晶体铁电畴反转的局域控制。提出了物理机理的理论分析,认为外电场和激光辐照场的共同作用在晶体内部产生高浓度、大尺寸的缺陷结构,缺陷一定程度上降低畴体成核和畴壁运动所需要克服的退极化能和畴壁能,实现激光诱导畴反转。     

Mode spectrum of noncollinear electroacoustic boundary-guided waves in a ferroelectric with a moving strip domain

The mode spectrum of electroacoustic boundary waves guided by a strip domain uniformly moving in a 4-mm ferroelectric is considered in the quasi-static approximation. The motion of the strip domain is found to cause the wave vector of the electroacoustic wave to be noncollinear with the guiding boundaries. The frequency dependences of the phase velocity are presented for the symmetric and antisymmetric modes of the electroacoustic wave. These dependences are compared in the reference system fixed to the strip domain and in the laboratory reference system. It is shown that, at low and moderate frequencies, the symmetric mode of the electroacoustic wave is more efficiently localized by a moving strip domain than by a single domain wall.     

The role of the spatial distribution of local polarization perturbations in the posistor effect onset

The electrical resistance of polycrystalline ferroelectric semiconductors is defined by the potential barriers due to the existence of local charged surface states at crystallite boundaries. The barrier screening depends on the state of the ferroelectric system and is maximal during spontaneous-polarization switching. It is shown in this paper that the local perturbation of the ferroelectric system, resulting from the repolarization and appearing as a domain wall between the regions with different polarization directions, has a zigzag configuration. The electric field in the vicinity of the zigzag domain wall is stabilized and coincides with the coercive field, which provides low potential barriers in the ferroelectric phase compared with the paraelectric phase. The repolarization processes become inefficient in the potential barrier screening at the transition from the ferroelectric to the paraelectric phase. As a result, a sharp increase in the electrical resistance is observed at the ferroelectric-paraelectric phase transition, called the posistor effect.     

Influence of ferroelectric domain walls on the Raman scattering process in lithium tantalate and niobate

We report changes in the Raman spectra at ferroelectric domain walls in near-stoichiometric LiNbO3 and stoichiometric LiTaO3. We find a decrease of intensity for the regular bulk Raman peaks along with increases of intensity in spectral regions that correspond to phonons, which propagate at an angle with respect to the incident light. In the backscattering geometry, such modes are not supported in the bulk crystal due to momentum conservation. We confirm that these changes are due to the domain wall itself and are independent of intrinsic defects or charging effects.     

Deaging and asymmetric energy landscapes in electrically biased ferroelectrics

In ferroic materials, the dielectric, piezoelectric, magnetic, and elastic coefficients are significantly affected by the motion of domain walls. This motion can be described as the propagation of a wall across various types and strengths of pinning centers that collectively constitute a force profile or energetic landscape. Biased domain structures and asymmetric energy landscapes can be created through application of high fields (such as during electrical poling), and the material behavior in such states is often highly asymmetric. In some cases, this behavior can be considered as the electric analogue to the Bauschinger effect. The present Letter uses time-resolved, high-energy x-ray Bragg scattering to probe this asymmetry and the associated deaging effect in the ferroelectric morphotropic phase boundary composition 0.36BiScO3 - 0.64PbTiO3.     

Specific features of the thermal physical properties of relaxor ceramics based on lead zirconate titanate

The heat capacity and thermal expansion of ferroelectric relaxors based on lead zirconate titanate are studied near the diffuse phase transition. It is shown that no spontaneous phase transitions from the paraelectric phase to the ferroelectric phase and from the relaxor state to the normal ferroelectric state occur in an ensemble of nanometer-sized polar regions. It is noted that the transitions can be caused only by external electric fields or storage for a fairly long time.     

Nonlinear constitutive behavior of ferroelectric materials

The ferroelectric specimen is considered as an aggregation of many randomly oriented domains. According to this mechanism, a multi-domain mechanical model is developed in this paper. Each domain is represented by one element. The applied stress and electric field are taken to be the stress and electric field in the formula of the driving force of domain switching for each element in the specimen. It means that the macroscopic switching criterion is used for calculating the volume fraction of domain switching for each element. By using the hardening relation between the driving force of domain switching and the volume fraction of domain switching calibrated, the volume fraction of domain switching for each element is calculated. Substituting the stress and electric field and the volume fraction of domain switching into the constitutive equation of ferroelectric material, one can easily get the strain and electric displacement for each element. The macroscopic behavior of the ferroelectric specimen is then directly calculated by volume averaging. Meanwhile, the nonlinear finite element analysis for the ferroelectric specimen is carried out. In the finite element simulation, the volume fraction of domain switching for each element is calculated by using the same method mentioned above. The interaction between different elements is taken into account in the finite element simulation and the local stress and electric field for each element is obtained. The macroscopic behavior of the specimen is then calculated by volume averaging. The computation results involve the electric butterfly shaped curves of axial strain versus the axial electric field and the hysteresis loops of electric displacement versus the electric field for ferroelectric specimens under the uniaxial coupled stress and electric field loading. The present theoretical prediction agrees reasonably with the experimental results. Supported by the National Natural Science Foundation of China (Grant No. 10572138)     

Distinct ferroelectric domain switching dynamics in epitaxial BiFeO3 (001) capacitors depending on the bias polarity

Understanding ferroelectric domain switching dynamics at the nanoscale is a great of importance in the viewpoints of fundamental physics and technological applications. Here, we investigated the intriguing polarity-dependent switching dynamics of ferroelectric domains in epitaxial BiFeO₃ (001) capacitors using transient switching current measurement and piezoresponse force microscopy. We observed the distinct behavior of nucleation and domain wall motion depending on the polarity of external electric bias. When applying the negative bias to the top electrode, the sideways domain wall motion initiated by only few nuclei was dominant to polarization switching. However, when applying the positive bias, most of domains started to grow from the pre-existed pinned domains and their growth velocity was much smaller. We suggest that the observed two distinct domain switching behavior is ascribed to the interfacial defect layer.     

Domain walls in gapped graphene

The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support midgap states which are localized in the vicinity of the domain wall and propagate along its length. With a finite density of domain walls, these states can alter the electronic properties of gapped graphene significantly. If the midgap band is partially filled, the domain wall can behave like a one-dimensional metal embedded in a semiconductor and could potentially be used as a single-channel quantum wire.