Far Infrared Investigation of Plasmon-LO Phonon Coupling and Surface Polaritons Modes in Donor Doped Cd1-xHgxTe and CdTe Thin Layer on GaAs Substrate

Infrared Fourier transform spectroscopy has been used to investigate phonon and plasmon modes in Cd_1-xHg_xTe and CdTe thin layer on GaAs substrate. Attenuated total reflection (ATR) spectroscopy has been used to excite surface plasmon and phonon polaritons. The plasmon-LO phonon coupling modes in samples are studied by dispersion curve calculation for various carrier concentrations. There exist three branches of coupled modes in dispersion curve. For analysis of the far infrared polarized reflectivity spectra we employ the harmonic oscillator dielectiic function model and the Drude model for free carrier response. We find that the coupling modes dependent to the concentration of free carriers. Furthermore, the experimental data have been used to calculate carrier concentration, composition parameter, mobility of carrier, thickness of layer and gap energy.     

Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

Surface phonon and plasmon–phonon polariton characteristics of GaAs, Al _x Ga_1?x As/GaAs, and GaN/Al₂O₃ layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.     

Optical Characterization of Donor Doped Ternary Alloy Ga1-xNxAs and GaN-Ga1-xNxAs MQW by Using Infrared Fourier Transform Spectroscopy

In this work polarized infrared Fourier transform spectroscopy is employed to study the electronic and optical properties of doped Ga_1-xN_xAs ternary alloy and GaN-Ga_1-xN_xAs MQW. We have analyzed the far infrared spectra of GaN-GaNAs MQW by using a simple macroscopic theory base on effective medium approximation model. The dispersion curve of coupled LO phonon- plasmon modes were calculated from the polarized infrared reflectivity data. The GaNAs layer shows two-mode behavior in the infrared spectral range, a GaAs-like and a GaN-like sublattices. We detect the transverse optic phonon of GaN sublattice around 475 cm^-1. The origin of the sharp feature in p-polarization reflectivity about 300 cm^-1 as well as the dip at LO phonon frequency of GaAs sublattice are due to Brewster mode. The Brewster mode is couple strongly to plasmon mode. Attenuated total reflection spectroscopy has been used to excite and investigate surface plasmon and surface polariton.     

Effect of quantizing magnetic field on the spectrum and damping of polaritons in double two-dimensional electronic systems

Nonradiative (surface and bulk) polaritons in a semiconductor structure composed of two heterojunctions GaAs/Al_xGa_1?x As are investigated under the integer quantum Hall effect (IQHE) conditions. The dispersive, polarization, and energy characteristics of these polaritons are determined including energy dissipation in the two-dimensional electron semiconductor layers. The phase and group velocities of surface and bulk polaritons are shown to be quantized under the IQHE conditions. It is found that resonance coupling of two surface polariton modes may occur in double GaAs/Al_xGa_1?x As heterojunctions. Possible experimental observation of nonradiative polaritons is discussed.     

Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface

The energy splitting of fundamental localized transverse optical (TO1) phonon modes in GaAs/AlAs superlattices and quantum wires grown by molecular-beam epitaxy on a faceted (311)A GaAs surface is observed by Raman spectroscopy. The form of the Raman scattering tensor makes it possible to observe the TO_x and TO_y modes separately, using different scattering geometries the y and x axes are the directions of displacement of the atoms and are directed parallel and transverse to the facets on the (311)A surface). Enhancement of the splitting of the TO1_x and TO1_y modes is observed as the average thickness of the GaAs layers is decreased from 21 to 8.5 Å. The splitting is probably due to the effect of the corrugation of the GaAs/AlAs (311)A hetero-interface on the properties of localized phonon modes. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 45–48 (10 July 1997)     

Effect of dissipation on the properties of surface polaritons in GaAs/AlGaAs heterojunctions in a quantizing magnetic field

A study is reported of nonradiative surface and bulk polaritons in GaAs/Al_xGa_1−x As real heterojunctions under conditions favoring integer-quantum Hall effect (IQHE) and in the presence of dissipation in a two-dimensional electron layer. The conditions of their existence, the spectrum, and damping have been determined. It is shown that under IQHE conditions all aspects of surface and bulk polaritons are quantized. It is found that, as the wave number is varied, surface and bulk polaritons can transform continuously into one another. The possibilities of experimental observation of nonradiative polaritons are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 705–711 (April 1999)     

The Investigation of Plasmon-Longitudinal Optical Phonon Coupling and Surface Polariton Modes in Donor Doped GaAs-Al0.33Ga0.67As Multi Quantum Wells

Infrared Fourier transform spectroscopy has been used to investigate phonon, plasmon, surface polariton and plasma-longitudinal optical phonon coupling in highly donor doped multi quantum wells (GaAs/Al_0.33Ga_0.67As) and direct band gap n- type Al_XGa_1-XAs thin layer on GaAs substrate. Using different samples with different concentration of free carriers. The dispersion equation of coupling modes have been calculated by using the condition which the dielectric functions of samples are zero for longitudinal coupled modes and experimental papameters which have been obtained from the best fit p-polarized oblique incidence far infrared reflection spectra. In MQW samples, the free carriers confined to the well and carriers are quasi two dimensional. So, plasmon- LO phonon coupling occur in the well (GaAs). In n- type Al_XGa_1-XAs thin layer, the coupled modes consist of three branches of the high, intermediate and low frequency modes. Their frequencies depend on both concentration and alloy composition. To analyses the surface polariton modes we carry out attenuated total reflection (ATR) measurements. In order to support our assignment the magnetic field profiles and surface polariton dispersion curves have been calculated.     

Surface phonon–polaritons in rectangular quantum wires of polar ternary mixed crystals

In this paper, the dispersion relations of surface phonon–polaritons in freestanding rectangular quantum wire systems of polar ternary mixed crystals are derived. The numerical calculations for Al_xGa_1−xAs and Zn_xCd_1−xSe quantum wire systems are performed. The results reveal that the frequencies of surface phonon–polariton modes are sensitive to the geometric structures of the quantum wires, the wave-vectors in z-direction, and the compositions of the ternary mixed crystal materials. The effects of the “two-mode” and “one-mode” behaviors of the ternary mixed crystals on the surface phonon–polariton modes are also discussed.     

In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED,SIMS, and AES techniques

A combination of the surface diagnostic techniques Auger electron spectroscopy (AES), reflection high energy electron diffraction (RHEED), and secondary ion mass spectroscopy (SIMS) was used in order to get more detailed information on basic processes which lead to the formation of high quality monocrystalline GaAs and Al _x Ga_1−x As films by molecular beam epitaxy (MBE) under ultra-high vacuum conditions. The formation and changes of reconstructed surface structures on (100) GaAs as a function of growth parameters were observedduring growth by RHEED. AES was used to determine the relative ratio of Ga/As on the surface for different reconstructed structures, to investigate the impurity contamination on substrate surfaces and grown films, and to study the surface segregation of Sn in MBE GaAs during doping. Finally, intentional and unintentional impurities incorporated during the growth of GaAs and Al _x Ga_1−x As by MBE were detected by the SIMS technique immediately after growth within the reaction chamber.     

Quantization of the excitonic polaritons in CdTe/CdMnTe multiple quantum wells

The size quantization of the excitonic polaritons in CdTe/Cd_1-xMn_xTe (x=0.1) multiple quantum wells was found in reflection and PLE spectra. The series of peaks above the heavy-hole exciton line were observed over a wide energy region in the PLE spectrum and the corresponding structures were seen also in the reflection spectrum. The energies of the peaks agree very well with a simple model of the quantum size effect of the excitonic polaritons. Additionally, subpicosecond time-domain measurements in transient reflectivity revealed oscillatory decay with two frequency components. The frequency difference between these components corresponds to the longitudinal-transverse splitting energy of excitonic polaritons at k=0.     

Temperature dependence of the fundamental band gap parameters in cadmium-rich Zn<Subscript>x</Subscript>Cd<Subscript>1-x</Subscript>Se using photoluminescence spectroscopy

Thin films of ternary Zn_xCd_1-xSe were deposited on GaAs (100) substrate using metalorganic-chemical-vapour-deposition (MOCVD) technique. Temperature dependence of the nearband-edge emission from these Cd-rich Zn_xCd_1-xSe (forx = 0025, 0.045) films has been studied using photoluminescence spectroscopy. Relevant parameters that describe temperature variation of the energy and broadening of the fundamental band gap have been evaluated using various models including the two-oscillator model, the Bose-Einstein model and the Varshni model. While all these models suffice to explain spectra at higher temperatures, the two-oscillator model not only explains low temperature spectra adequately but also provides additional information concerning phonon dispersion in these materials.     

Hot electron energy and momentum relaxation in GaAs/AlAs and GaAs/Ga1-xAlxAs multiple quantum wells

Experimental results on high electric field longitudinal transport in GaAs/AlAs and GaAs/Ga_1-xAl_xAs multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions.(i) In GaAs/Ga_1-xAl_xAs systems the dominant energy and momentum relaxation mechanism is through scattering with GaAs -modes.(ii) However, in GaAs/AlAs systems the AlAs interface mode is dominant in relaxing the energy and momentum of the quantum well electrons.(iii) The hot electron momentum relaxation as obtained from the high-field drift velocity experiments is strongly affected by the production of hot phonons as expected from a model involving a non-drifting hot phonon distribution.(iv) The importance of the AlAs interface mode in GaAs/Ga_1-xAl_xAs MQW is not the result of the intrinsic scattering rate but related to its shorter lifetime, compared to GaAs modes.     

Phonon freedom and confinement in GaAsAlxGa1−xAs superlattices

Phonon modes in GaAsAl_xGa_1?xAs superlattices simplify when the phonon wavevector q is perpendicular to the plane of the layers. We have studied such modes using a Raman back-scattering technique on SL's grown by MBE. The results are consistent with simple ideas of LA phonon freedom and LO phonon confinement suggested by one-dimensional lattice dynamical calculations. The longitudinal acoustic (LA) modes show zone folding due to mini-zone formation. Their frequencies occur in doublets linearly dependent on q and show little mini-gap formation. This is consistent with a picture of approximately free plane wave propagating through the interfaces with Raman coupling due to SL layering of the photoelastic coefficient. By contrast, Raman data on LO modes in small period GaAsAlAs SL's suggest that these modes are standing waves strongly confined in either GaAs or AlAs.     

Phonon deformation potentials of CdTe

Abstract

Single and multiple quantum wells (QWs) of CdTe/Cd_1?xZn_xTe, of different composition (x), grown on a Cd_1?xZn_xTe (001) substrate are studied by Raman spectroscopy at low temperature, under resonance conditions. Two of the three phonon deformation potentials (PDPs) of the LO phonon of CdTe are calculated using the observed phonon frequency shifts due to a lattice-misfit bisotropic strain.     

Infrared optical characterization of GaAsAlxGa1−xAs submicron heterostructures

Infrared optical characterization of submicron, multiple layers of Al_xGa_1?xAsGaAs on a GaAs substrate is reported, demonstrating that layer resolved phonon frequencies, electron concentrations and mobilities can be obtained.     

Finite confining effect on electron–phonon interaction in GaAs/Ga1−xAlxAs single heterostructures

The form factors of the electron–phonon interaction for GaAs/Ga_1−xAl_xAs single heterostructures have been evaluated using a finite height barrier. The calculations are performed within the extreme quantum limit approximation, assuming for the envelope electronic wavefunction a modified Fang–Howard wavefunction. Both types of long-wave phonons, longitudinal optical and interface phonons, are considered. It is found that the effect of the finite height is to reduce the strength of the electron–phonon interaction.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Optical phonon dynamics of GaAs studied with time-resolved terahertz spectroscopy

We investigate the reflection near the reststrahlen band of the optical phonon in bulk GaAs in the time domain, using time-resolved terahertz spectroscopy. We find that the dynamics of the reflection measured for GaAs differs strongly from the reflection dynamics that would be expected for a TO phonon with a frequency-independent dephasing time.     

Vibration Spectra and Structural Characteristics of Ba[(Zn1-x Mg x )1/3Nb2/3]O3 Solid Solutions

Abstract

The Ba[(Zn_1-x Mg _x )_1/3Nb_2/3]O₃ (BZMN, x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) solid solution ceramics were synthesized by the conventional solid-state reaction method. Vibration spectra (Raman spectroscopy and Fourier transform far-infrared reflection [FTIR] spectroscopy) and X-ray diffraction (XRD) were employed to evaluate the correlation between crystal structures and vibration modes of these solid solutions as a function of Zn²⁺ ions replaced by Mg²⁺ ions. Spectroscopic and structural data show sensitivity to the sample structural evolution with Mg²⁺ concentration, and a 1:2 ordered structure appears for Mg-rich samples where x ≥ 0.6. The Ba[(Zn_0.4Mg_0.6)_1/3Nb_2/3]O₃ has a 1:2 ordered monoclinic unit cell, which is distorted by the antiphase tilting of the oxygen octahedra. The phonon modes were assigned, and a correlation of phonon vibrations with the microstructure was found. The position and width of the phonon modes were determined and correlated to the ionic radii, mass, and tolerance factors for the different atoms substituted in the B′-site.     

Polaritons in anisotropic semiconductors

We show how to compute the optical properties (reflection and absorption) of anisotropic semiconductors in the exciton energy region, taking into account polariton and electron-hole coherence effects. The method is applied to a GaAs/Ga_1–x Al _x As superlattice, and the modifications in the optical properties with respect to GaAs are related to the anisotropy.