Complex molecular dynamics of (CH3NH3)5Bi2Br11 (MAPBB) protons from NMR relaxation and second moment of NMR spectrum

Molecular dynamics of a polycrystalline sample of (CH(3)NH(3))(5)Bi(2)Br(11) (MAPBB) is studied on the basis of the proton T(1) (55.2 MHz) relaxation time and the proton second moment of NMR line. The T(1) (55.2 MHz) was measured for temperatures from 20K to 330 K, while the second moment M(2) for those from 40K to 330 K. The proton spin pairs of the methyl and ammonium groups perform a complex stochastic motion being a resultant of four components characterised by the correlation times τ(3)(T), τ(3)(H), τ(2), and τ(iso), referring to the tunnelling and over the barrier jumps in a triple potential, jumps between two equilibrium sites and isotropic rotation. The theoretical expressions for the spectral densities in the cases of the complex motion considered were derived. For τ(3)(H), τ(2), and τ(iso) the Arrhenius temperature dependence was assumed, while for τ(3)(T)-the Schr?dinger one. The correlation times τ(3)(H) for CH(3) and NH(3) groups differ, which indicates the uncorrelated motion of these groups. The stochastic tunnelling jumps are not present above the temperature T(tun) at which the thermal energy is higher than the activation energy of jumps over the barrier attributed to the hindered rotation of the CH(3) and NH(3) groups. The T(tun) temperature is 54.6 K for NH(3) group and 46.5 K for CH(3) group in MAPBB crystal. The tunnelling jumps of the methyl and ammonium protons are responsible for the flattening of T(1) temperature dependence at low temperatures. The isotropic tumbling is detectable only from the M(2) temperature dependence. The isotropic tumbling reduces the second moment to 4 G(2) which is the value of the intermolecular part of the second moment. The motion characterised by the correlation time τ(2) is well detectable from both T(1) and M(2) temperature dependences. This motion causes the appearance of T(1) minimum at 130 K and reduction of the second moment to the 7.7 G(2) value. The small tunnelling splitting ω(T) of the same value for the methyl and ammonium groups was estimated as 226 MHz from the Haupt equation or 80 MHz from the corrected by us Haupt equation. These frequencies correspond to 0.93 μeV and 0.34 μeV tunnel splitting energy.     

无序CuZr和CuY合金的电阻和磁电阻

以熔化-旋转法制备了Cu70Zr30和Cu100-xYx( x = 28, 67)非晶带试样并在1～300 K温度范围内测量了电阻和磁电阻随温度变化的规律.非晶Cu70Zr30电阻率ρ(T)的温度系数(TCR)在整个测量温区内都是负值,并且在两个不同的温区表现出-T1/2行为.对于类似的Cu100-xYx合金系统,在1～200 K温区内也做了同类测量.在低温1～4 K, 两个不同的无序系统CuZr和CuY的 TCR都准确地表现出-T1/2行为,这表明无序系统在极低温条件下的量子相干效应.这主要应归因于在粒子-空穴通道的电子-电子相互作用.而无序Cu70Zr30在宽广的中低温区60～300 K以更大斜率表现出的-T1/2行为,可以用初始定域化理论解释.无序CuZr和CuY的低温磁电阻ρ(B,T)测量结果与定域化理论进行了拟合和讨论.     

Effect of temperature on the dislocation structure of the ordered alloy Ni3(Fe,Cr)

Transmission electron microscopy is used to study the dislocation structure of ordered polycrystalline Ni₃(Fe, Cr) alloy after deformation at temperatures of 293, 473, 673, and 773°K. The flow stress σ is plotted as a function of the density of dislocations ρ. It is observed that there is a direct proportionality between σ and ρ^1/2, which indicates that the relation τ= αGbρ^1/2 is satisfied, where τ is the shear stress, G is the shear modulus, b is the Burgers vector, and α is a coefficient weakly dependent on the density of dislocations. The values of α are found for different deformation temperatures from the slope of the lines. It is found that α decreases with increasing deformation temperature. When the temperature is increased from 293 to 773°K the reduction in α is about 20% in agreement with estimates of the resistance to motion by superdislocations caused by nonconservative drag of dislocation jogs.     

Observation of long spin-relaxation times in bilayer graphene at room temperature

We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density, and temperature. The spin-relaxation time τ(s) scales inversely with the mobility μ of BLG samples both at room temperature (RT) and at low temperature (LT). This indicates the importance of D'yakonov-Perel' spin scattering in BLG. Spin-relaxation times of up to 2 ns at RT are observed in samples with the lowest mobility. These times are an order of magnitude longer than any values previously reported for single-layer graphene (SLG). We discuss the role of intrinsic and extrinsic factors that could lead to the dominance of D'yakonov-Perel' spin scattering in BLG. In comparison to SLG, significant changes in the carrier density dependence of τ(s) are observed as a function of temperature.     

High-pressure study of non-Fermi liquid and spin-glass-like behavior in CeRhSn

We present measurements of the temperature dependence of the electrical resistivity ρ(T) of CeRhSn up to ~27 kbar. At low temperatures, ρ(T) varies linearly with T for all pressures, indicating non-Fermi liquid behavior. Below Tf ~ 6 K, ρ(T) deviates from a linear dependence. We found that the low-T feature centered at T = Tf shows a pressure dependence ?Tf/?P ≈ 30 mK kbar?1 which is typical of canonical spin glasses. This interplay between spin-glass-like and non-Fermi liquid behavior was observed in both CeRhSn and a Ce0.9La0.1RhSn alloy.     

Intramolecular vibrational relaxation in aromatic molecules. 2: An experimental and computational study of pyrrole and triazine near the IVR threshold

The threshold region of vibrational energy redistribution (IVR) presents a great experimental and computational challenge for organic molecules with more than 10 degrees of freedom. The density of states ρ_tot is high and requires high resolution measurements over a wide range to cover all relevant timescales experimentally. Yet ρ_tot is sufficiently low that IVR quantities like the initial relaxation time τIVR or the number of participating states N_eff are very sensitive to the coupling structure. To highlight the competing effects of molecular symmetry and mode localization on the accessible density of states, this work complements a study of benzene (Callegari, A., Merker, U., Engels, P., Srivastava, H. K., Lehmann, K. K., and Scoles, G., 2000, J. chem. Phys., 113, 10583) by measuring the CH overtone spectra of pyrrole (C₄H₄NH) and 1,2,3-triazine (C₃N₃H₃) using eigenstate-resolved double-resonance spectroscopy. Large scale computations of IVR dynamics were undertaken, applying filter diagonalization to analytically fitted fourth-order ab initio force fields. With an overall adjustment to the anharmonicity of the potential, the modelled N_eff and τ_IVR agree with the experimental quantities within a factor of 2 to 3, which is reasonable for a rate theory in the threshold regime. The models also correctly predict the experimentally observed trends of τ_IVR and N_eff for the two molecules, and provide insight into the highly off-resonant coupling mechanism, which yields very sharp linewidths.     

Spin-reorientation, ferroelectricity, and magnetodielectric effect in YFe(1-x)Mn(x)O3(0.1 ≤ x ≤ 0.40)

We report the observation of magnetoelectric and magnetodielectric effects at different temperatures in Mn-substituted yttrium orthoferrite, YFe(1-x)Mn(x)O(3)(0.1 ≤ x ≤ 0.40). Substitution of Mn in antiferromagnetic YFeO(3)(T(N) = 640 K) induces a first-order spin-reorientation transition at a temperature, T(SR), which increases with x whereas the Néel temperature (T(N)) decreases. While the magnetodielectric effect occurs at T(SR) and T(N), the ferroelectricity appears rather at low temperatures. The origin of magnetodielectric effect is attributed to spin-phonon coupling as evidenced from the temperature dependence of Raman phonon modes. The large magnetocapacitance (18% at 50 kOe) near T(SR) = 320 K and high ferroelectric transition temperature (～115 K) observed for x = 0.4 suggest routes to enhance magnetoelectric effect near room temperature for practical applications.     

Quasi-elastic neutron scattering studies of the slow dynamics of supercooled and glassy aspirin

Aspirin, also known as acetylsalicylic acid (ASA), is not only a wonderful drug, but also a good glass former. Therefore, it serves as an important molecular system to study the near-arrest and arrested phenomena. In this paper, a high-resolution quasi-elastic neutron scattering (QENS) technique is used to investigate the slow dynamics of supercooled liquid and glassy aspirin from 410 down to 350 K. The measured QENS spectra can be analyzed with a stretched exponential model. We find that (i) the stretched exponent β(Q) is independent of the wavevector transfer Q in the measured Q range and (ii) the structural relaxation time τ(Q) follows a power-law dependence on Q. Consequently, the Q-independent structural relaxation time τ(0) can be extracted for each temperature to characterize the slow dynamics of aspirin. The temperature dependence of τ(0) can be fitted with the mode-coupling power law, the Vogel-Fulcher-Tammann equation and a universal equation for fragile glass forming liquids recently proposed by Tokuyama in the measured temperature range. The calculated dynamic response function χ(T)(Q, t) using the experimentally determined self-intermediate scattering function of the hydrogen atoms of aspirin shows direct evidence of the enhanced dynamic fluctuations as the aspirin is increasingly supercooled, in agreement with the fixed-time mean squared displacement ?x(2)? and the non-Gaussian parameter α(2) extracted from the elastic scattering.     

La2-xBaxCuO4单晶反常的正常态输运性质研究

测量了La2-xBaxCuO4系列单晶样品的电阻率和热电势,我们发现,当＝0．125（x＝1／8）时,La2-xBaxCuO4的截流子是所有样品中局域化最强的,但数据分析结果显示,它又是弱域化行为,文中我们讨论了Tc的被压制的原因,得出这可能与低温下LTO到LTT的结构相变,空穴与自旋的静态条纹有序有关,热电势结果观察不到任何声子曳引的痕迹,表明在LBCO体系中电声子的相互作用很弱。     

Nd1.67Sr0.33NiO4中的热导反常

报道了两个典型掺杂的镍氧化物Nd＿2-xSr＿xNiO＿4(x =0.33,1.35)的低温热导率、电阻率和低场交流磁化率，测试温区为77—300K. 在Nd＿2-xSr＿xNiO＿4 (x=0.33)样品的热导率-温度曲线上在电荷有序转 变温度（T＿CO）和自旋有序转变温度（T＿SO）附近分别观测到反常， 电荷有序使热导率在T＿CO以下有所增加，反铁磁自旋有序使热导率在T＿SO附近被压制. 在低场交流磁化率-温度曲线上也分别观测到对电荷有序和自旋有 序的响应，而在其电阻率-温度曲线上仅观测到电荷有序. 作为比较，Nd＿1.67Sr0.33NiO＿4样品中没有观测到输运性质和磁性质上的反常. 两个样品中声子热导占 主导地位. Nd＿1.67Sr0.33NiO＿4样品中电荷有序和自旋有序导致的热导 率的反常表明样品中存在强的电荷-声子和自旋-声子相互作用. 关键词： 热导率 电荷有序 自旋有序     

Field-dependent diamagnetic transition in magnetic superconductor Sm1.85Ce0.15CuO4-y

The magnetic penetration depth of single crystal Sm(1.85)Ce(0.15)CuO(4-y) was measured down to 0.4 K in dc fields up to 7 kOe. For insulating Sm2CuO4, Sm3+ spins order at the Ne el temperature, T(N)=6 K, independent of the applied field. Superconducting Sm(1.85)Ce(0.15)CuO(4-y) (T(c) approximately 23 K) shows a sharp increase in diamagnetic screening below T(*)(H) which varied from 4.0 K (H=0) to 0.5 K (H=7 kOe) for a field along the c axis. If the field was aligned parallel to the conducting planes, T(*) remained unchanged. The unusual field dependence of T(*) indicates a spin-freezing transition that dramatically increases the superfluid density.     

Phonon-limited transport coefficients in extrinsic graphene

The effect of electron-phonon scattering processes on the thermoelectric properties of extrinsic graphene was studied. Electrical and thermal resistivity, as well as the thermopower, were calculated within the Bloch theory approximations. Analytical expressions for the different transport coefficients were obtained from a variational solution of the Boltzmann equation. The phonon-limited electrical resistivity ρ(e-ph) shows a linear dependence at high temperatures and follows ρ(e-ph) ~T(4) at low temperatures, in agreement with experiments and theory previously reported in the literature. The phonon-limited thermal resistivity at low temperatures exhibits a ~T dependence and achieves a nearly constant value at high temperatures. The predicted Seebeck coefficient at very low temperatures is Q(T) ~ Π(2)k(2)_(B)/T(3eE_(F), which shows a n(-1/2) dependence with the density of carriers, in agreement with experimental evidence. Our results suggest that thermoelectric properties can be controlled by adjusting the Bloch-Grüneisen temperature through its dependence on the extrinsic carrier density in graphene.     

Anomalous Hall effect and electron transport in ferromagnetic MnBi films

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.     

稀土离子发光体系中能量传递和迁移模型的研究

基于以前综合V-F模型(考虑施主受主(D-A)能量传递)和B模型(考虑施主施主(D-D)能量迁移)而提出的V-F-B综合模型,对La_1-xEr_xF₃体系中Er³⁺离子四种低掺杂浓度下(x=0.001,0.003,0.01,0.02)295K时⁴S_3/2→⁴I_15/2发光的时间演化曲线成功地重新进行了数值拟合.结果表明该体系内D-A间交叉弛豫能量传递是偶极-偶极作用,作用常数C_DA为4.75×10^-41cm⁶/s,与Okamoto等人原用YT扩散模型得到的结果一致.而拟合得到的四个D-D平均跳跃时间τ₀粗略地与x_D^α次方(x_D为D离子浓度)成正比(α≈-1.237),并不遵从τ₀很小时与x_D的-2次方成正比的理论关系.同时,通过把D-D迁移和D-A传递同时同样地纳入V-F模型还粗略估计了D-D平均跳跃时间τ₀′的值,发现它与V-F-B给出的τ₀拟合值比较一致,说明V-F-B模型在一定近似程度上是内部自恰的、合理的. 关键词： 能量传递 能量迁移 跳跃时间 交叉弛豫     

Modelling Accelerating Growth with IntermittentProcesses in Evolving Networks

In this paper, the acceleratingly growing network model with intermittent processes is proposed. In the growing network, there exist both accelerating and intermittent processes. The network is grown from the number of nodes m₀ and the number of links added with each new node is a nonlinearly increasing function m+aN^β(t)f(t), where N(t) is the number of nodes present at time t. f(t) is the periodic and bistable function with period T, whose values are 1 and 0 indicating accelerating and intermittent processes, respectively. Here we denote the ratio τ of acceleration time to whole one. We study the degree distribution p(k) of the model, focusing on the dependence of p(k) on the network parameters τ, T, m, a, N, and β. It is found that there exists a phase transition point k_c such that if k<k_c, then p(k) obeys a power-law distribution with exponent -γ₁, while if k>k_c, then p(k) exhibits a power-law distribution with exponent -γ₂. Moreover, the exponents γ₁ and γ₂ are independent of τ, T, m, a, and N, while they depend only on the parameter β. More interesting, the phase transition point is described by k_c=aN^β, which is equal to the value at which p(k) is maximum in GM model.     

Signatures of spin-glass behaviour in PrIr2B2 and heavy fermion behaviour in PrIr2B2C

The magnetic and transport properties of PrIr(2)B(2) and PrIr(2)B(2)C have been investigated by dc and ac magnetic susceptibility, specific heat, electrical resistivity and magnetoresistance measurements. PrIr(2)B(2) forms in CaRh(2)B(2)-type orthorhombic crystal structure (space group Fddd). At low fields the dc magnetic susceptibility of PrIr(2)B(2) exhibits a sharp anomaly near 46 K which is followed by an abrupt increase below 10 K with a peak at 6 K, and split-up in ZFC and FC data below 46 K. In contrast, the specific heat exhibits only a broad Schottky type hump near 9 K which indicates that there is no long range magnetic order in this compound. The thermo-remanent magnetization is found to decay very slowly with a mean relaxation time τ = 3917 s. An ac magnetic susceptibility measurement also observes two sharp anomalies; the peak positions strongly depend on the frequency and shift towards high temperature with an increase in frequency, obeying the Vogel-Fulcher law as expected for a canonical spin-glass system. The two spin-glass transitions occur at freezing temperatures T(f1) = 36 K and T(f2) = 3.5 K with shifts in the freezing temperatures per decade of frequency δT(f1) = 0.044 and δT(f2) = 0.09. An analysis of the frequency dependence of the transition temperature with critical slowing down, τ(max)/τ(0) = [(T(f)-T(SG))/T(SG)](-zν), gives τ(0) = 10(-7) s and exponent zν = 8, and the Vogel-Fulcher law gives an activation energy of 84 K for T(f1) and 27.5 K for T(f2). While zν = 8 is typical for spin-glass system, the characteristic relaxation time τ(0) = 10(-7) s is very large and comparable to that of superspin-glass systems. An addition of C in PrIr(2)B(2) leads to PrIr(2)B(2)C which forms in LuNi(2)B(2)C-type tetragonal structure (space group I4/mmm) and remains paramagnetic down to 2 K. The specific heat data show a broad Schottky type anomaly, which could be fairly reproduced with CEF analysis which suggests that the ground state is a CEF-split singlet and the first excited state singlet is situated 15 K above the ground state. The Sommerfeld coefficient γ～300 mJ mol(-1) K(-2) of PrIr(2)B(2)C is very high and reflects a heavy fermion behaviour in this compound. We believe that the heavy fermion state in PrIr(2)B(2)C has its origin in low lying crystal field excitations as has been observed in PrRh(2)B(2)C.     

Femtosecond magnito-optics based on photon echoes

A textured three-layer ZnO/Si(P)/Si(B) film in an uniform longitudinal magnetic field with a stregth of 0.4 T exhibits the effect of the polarization plane’s rotation from a stimulated photon echo signal formed at room temperature on the exciton states. At time interval τ₁₂ set to zero and time interval τ₂₃ = 720 and 900 fs, the angles of rotation are 27° and 19°, respectively.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

Energy relaxation of electrons in the (100) n-channel of a Si-MOSFET: II. Surface phonon treatment

The electron energy relaxation is investigated as a function of the “electron temperature” T_e in the n-channel of a (100) surface silicon MOSFET device by inspecting the phenomenological energy relaxation time τ_ε(T_e). τ_ε is determined theoretically and compared to experimental results in order to identify the energy relaxation mechanism(s) present at the interface. Two dimensional electron transport is assumed. Single activation temperature (θ) Rayleigh wave scattering and acoustic Rayleigh wave scattering are studied as possible energy loss processes. The effects of electric subbanding near the surface are included. τ_ε is calculated for T_e ? 15 K in the electric quantum limit. We find that a single θ = 12.0 K Rayleigh phonon fits theory to experiment for a single electron inversion density (N_inv) case, but can not provide a fit simultaneously for more than one N_inv value. Theory and experiment disagree when Rayleigh wave acoustic scattering is assumed.